TY - CHAP A1 - Reif, Jürgen A1 - Henyk, Matthias A1 - Wolfframm, Dirk T1 - Explosive Femtosecond Ablation from Ionic Crystals T2 - Laser Applications in Microelectronics and Optoelectronic Manufacturing V, 24 - 26 January 2000, San Jose, USA Y1 - 2000 SN - 0-8194-3550-3 SP - S. 26 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Mitzner, Rolf A1 - Reif, Jürgen T1 - Femtosecond Index Grating in Barium Fluoride: Efficient Self Diffraction and Enhancement of Surface SHG T2 - Applied Surface Science Y1 - 2000 SN - 0169-4332 VL - 154-155 SP - 565 EP - 570 ER - TY - GEN A1 - Henyk, Matthias A1 - Vogel, N. A1 - Wolfframm, Dirk A1 - Tempel, A. A1 - Reif, Jürgen T1 - Femtosecond Laser Ablation from Dielectric Materials: Comparison to Arc Discharge Erosion T2 - Applied Physics A Y1 - 1999 SN - 0947-8396 VL - 69 IS - Suppl. 1 SP - 355 EP - 358 ER - TY - GEN A1 - Costache, Florenta Adriana A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Femtosecond laser ionization mass spectrometric analysis of layers grown by pulsed laser deposition T2 - Applied Surface Science Y1 - 2005 SN - 0169-4332 VL - 247 IS - 1-4 SP - 249 EP - 255 ER - TY - GEN A1 - Reif, Jürgen A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Schmid, Reiner P. T1 - Femtosecond nonlinear optical characterisation of silicon wafers: the role of symmetry T2 - Materials Science in Semiconductor Processing Y1 - 2001 UR - http://www.sciencedirect.com/science/article/pii/S1369800100001669 U6 - https://doi.org/10.1016/S1369-8001(00)00166-9 SN - 1369-8001 VL - 4 IS - 1-3 SP - 241 EP - 243 ER - TY - GEN A1 - Reif, Jürgen A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Schmid, Reiner P. T1 - Femtosecond nonlinear optical characterization of silicon wafers: the role of symmetry T2 - Materials Science in Semiconductor Processing Y1 - 2001 SN - 1369-8001 VL - 4 IS - 1-3 SP - 241 EP - 243 ER - TY - GEN A1 - Wolfframm, Dirk A1 - Kouteva-Arguirova, Simona A1 - Arguirov, Tzanimir V. A1 - Schmid, Reiner P. A1 - Dittmar, K. A1 - Zienert, I. A1 - Reif, Jürgen T1 - Hafnium oxide on silicon: A non-destructive characterization of the interfacial layer T2 - Solid State Phenomena Y1 - 2004 UR - http://www.scientific.net/SSP.95-96.653.pdf SN - 1662-9779 SN - 0377-6883 VL - 95-96 SP - 653 EP - 658 ER - TY - CHAP A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Reif, Jürgen ED - Andersen, Peter E. ED - Johansen, P. M. ED - Pedersen, H. C. ED - Petersen, P. M. ED - Saffman, M. T1 - Highly Efficient, Ultrafast Laser Beam Manipulation by Laser Induced Index Grating in Barium Fluoride T2 - Advances in photorefractive materials, effects and devices, from the Seventh Topical Meeting on Photorefractive Materials, Effects and Devices, June 27 - 30, 1999, Elsinore, Denmark Y1 - 1999 SN - 1-55752-606-0 SP - S. 306 PB - Optical Society of America CY - Washington, DC ER - TY - GEN A1 - Kouteva-Arguirova, Simona A1 - Arguirov, Tzanimir V. A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Influence of Local Heating on Micro-Raman Spectroscopy of Silicon T2 - Journal of Applied Physics Y1 - 2003 SN - 1089-7550 VL - 94 SP - 4946 ER - TY - GEN A1 - Henyk, Matthias A1 - Mitzner, Rolf A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Laser Induced Ion Emission from Dielectrics T2 - Applied Surface Science Y1 - 2000 SN - 0169-4332 VL - 154-155 SP - 249 EP - 255 ER - TY - GEN A1 - Reif, Jürgen A1 - Schmid, Reiner P. A1 - Schneider, Thomas A1 - Wolfframm, Dirk T1 - Nonlinear Characterization of the Surface of Silicon Wafers: In-situ Detection of External Stress T2 - Solid State Electronics 44 Y1 - 2000 SN - 0038-1101 VL - 44 IS - 5 SP - 809 EP - 813 ER - TY - JOUR A1 - Reif, Jürgen A1 - Schmid, Reiner P. A1 - Schneider, Thomas A1 - Wolfframm, Dirk T1 - Nonlinear optical characterization of the surface of silicon wafers: In-situ detection of external stress Y1 - 2000 ER - TY - CHAP A1 - Reif, Jürgen A1 - Schneider, Thomas A1 - Schmid, Reiner P. A1 - Wolfframm, Dirk ED - Helvajian, Henry T1 - Nonlinear optical characterization of the surface of silicon wafers: In-situ detection of external stress T2 - Laser Applications in Microelectronics and Optoelectronic Manufacturing V, 24 - 26 January 2000, San Jose, USA Y1 - 2000 SN - 0-8194-3550-3 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Ratzke, Markus A1 - Kappa, Mathias A1 - Wolfframm, Dirk A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - PLD of high-k dielectric films on silicon T2 - Fifth International Symposium on Laser Precision Microfabrication, 11 - 14 May 2004, Nara, Japan Y1 - 2004 SN - 0-8194-5623-3 SP - 406 EP - 411 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Wolfframm, Dirk A1 - Ratzke, Markus A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Praseodymium Oxide growth on Si(100) by pulsed laser deposition T2 - Materials Science and Semiconductor Processing Y1 - 2002 SN - 1369-8001 VL - 5 IS - 4-5 SP - 429 EP - 434 ER - TY - GEN A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Kappa, Mathias A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Pulsed laser deposition of HfO2 and Pr(x)O(y) high-k films on Si(100) T2 - Applied Surface Science Y1 - 2005 SN - 0169-4332 VL - 247 IS - 1-4 SP - 128 EP - 133 ER - TY - GEN A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Arguirov, Tzanimir V. A1 - Kappa, Mathias A1 - Reif, Jürgen T1 - Pulsed laser deposition of Praseodymium Oxide films on Silicon (100) T2 - Applied Physics / A Y1 - 2004 SN - 0947-8396 SN - 1432-0630 VL - 79 IS - 4-6 SP - 1247 EP - 1249 ER - TY - JOUR A1 - Wolfframm, Dirk A1 - Ratzke, Markus A1 - Kappa, Mathias A1 - Montenegro, M. J. A1 - Döbeli, M. A1 - Lippert, Th. A1 - Reif, Jürgen T1 - Pulsed Laser Deposition of Thin PrxOx Films on Si(100) JF - Materials Science and Engineering B Y1 - 2004 SN - 0921-5107 VL - 109 IS - 1-3 SP - 24 EP - 29 ER - TY - GEN A1 - Henyk, Matthias A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultra short laser pulse induced charged particle emission from wide bandgap crystals T2 - Applied Surface Science Y1 - 2000 SN - 0169-4332 VL - 168 IS - 1/4 SP - 263 EP - 266 ER - TY - GEN A1 - Henyk, Matthias A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultrafast laser desorption from transparent insulators T2 - Nuclear Instruments and Methods in Physic Research B Y1 - 2000 SN - 0168-583x VL - 166/167 SP - 716 EP - 721 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultrafast laser-induced index grating in transparent insulators T2 - Nuclear Instruments and Methods B Y1 - 2000 SN - 0168-583x VL - 166-167 SP - 809 EP - 814 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Mitzner, Rolf A1 - Reif, Jürgen T1 - Ultrafast optical switching by instantaneous laser-induced grating formation and self-diffraction in barium flouride T2 - Applied Physics B Y1 - 1999 SN - 0946-2171 VL - 68 IS - 4 SP - 749 EP - 751 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultrafast optical switching by instantaneous laser-induced grating formation and self-diffraction in barium flouride T2 - Physica status solidi (a) Y1 - 1999 SN - 0031-8965 SN - 1862-6300 VL - 175 IS - 1 SP - 177 EP - 182 ER - TY - CHAP A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Mitzner, Rolf A1 - Reif, Jürgen T1 - Ultrafast Transient Grating in Barium Fluoride T2 - Novel lasers and devices - basic aspects, 14 - 16 June 1999, ICM, Internationales Congress Center München, Munich, Germany Y1 - 1999 SP - S. 145 PB - Optical Society of America CY - Washington, DC ER -