TY - GEN A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek A1 - Hinrich, S. T1 - Formation of atomically smooth, ultrathin oxides on Si(113) T2 - Solid state electronics Y1 - 2001 SN - 0038-1101 VL - 45 IS - 8 SP - 1219 EP - 1231 ER - TY - CHAP A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films Y1 - 2007 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Dabrowski, Jarek Marek A1 - Grzela, Tomasz A1 - Niermann, T. A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 21 SP - 213507 EP - 213507 ER - TY - GEN A1 - Dabrowski, Jarek Marek A1 - Lippert, Gunther A1 - Avila, J. A1 - Baringhaus, Jens A1 - Colambo, I. A1 - Dedkov, Yu. S. A1 - Herziger, Felix A1 - Lupina, Grzegorz A1 - Maultzsch, J. A1 - Schaffus, T. A1 - Schröder, Thomas A1 - Sowinska, Małgorzata A1 - Tegenkamp, Christoph A1 - Vignaud, D. A1 - Asensio, Maria Carmen T1 - Understanding the growth mechanism of graphene on Ge/Si(001) surfaces T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep31639 SN - 2045-2322 IS - 6 SP - Art. 31639 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Kitzmann, Julia A1 - Lisker, Marco A1 - Kulse, Philipp A1 - Krüger, Andreas A1 - Fursenko, Oksana A1 - Costina, Ioan A1 - Trusch, Andreas A1 - Yamamoto, Yuji A1 - Wolff, Andre A1 - Mai, Andreas A1 - Schröder, Thomas T1 - Graphene Synthesis and Processing on Ge Substrates T2 - ECS transactions Y1 - 2016 U6 - https://doi.org/10.1149/07508.0533ecst SN - 1938-6737 SN - 1938-5862 VL - 75 IS - 8 SP - 533 EP - 540 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Dabrowski, Jarek Marek A1 - Lisker, Marco A1 - Kitzmann, Julia A1 - Schulze, Sebastian A1 - Lippert, Gunther A1 - Fursenko, Oksana A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Wolff, Andre A1 - Mai, A. A1 - Schröder, Thomas A1 - Lupina, Grzegorz T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b11397 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 49 SP - 33786 EP - 33793 ER - TY - CHAP A1 - Dudek, Peter A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schmeißer, Dieter A1 - Schroeder, Thomas T1 - Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45 N2 - Ultra thin dielectric films (<20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10−8 A/cm2) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO2 - based alkaline earth perovskite - BaHfO3 with subsequent admixture of TiO2, resulting in formation of BaHf0.5Ti0.5O3 compound. The analysis of data indicates that band gap for HfO2 is similar to BaHfO3 and amounts 5.8 eV; for BaHf0.5Ti0.5O3 it decreases to 3.8 eV. We conclude that the addition of TiO2 to BaHfO3 increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior. Y1 - 2010 UR - http://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/ds/session/24/contribution/4 SN - 0420-0195 SP - S. 232 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müller, S. A1 - Seifarth, Olaf A1 - Dabrowski, Jarek Marek A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111) T2 - Journal of vacuum science & technology / B KW - band gabs KW - electronic structure KW - oxide layers Y1 - 2009 VL - 27 IS - 1 SP - 271 EP - 276 ER - TY - CHAP A1 - Seifarth, Olaf A1 - Wilke, A. A1 - Walczyk, Christian A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111) T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - band gab KW - XAS KW - UPS KW - Si(111) Y1 - 2008 SP - 285 EP - 286 ER - TY - CHAP A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek A1 - Schmeißer, Dieter T1 - Interface Characterization of the High-k Gate Dielectric Pr2O3 T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Pr2O3 is currently under consideration as a potential alternative gate dielectric candidate for sub-0.1 µm Complementary Metal Oxide Semiconductor (CMOS) technology. For all thin gate dielectrics, the interface with silicon plays a key role, and in most cases is a dominant factor in determining overall electrical properties. We studied the Pr2O3/Si(001) interface by a non-destructive depth profiling using synchrotron radiation photo-electron spectroscopy and ab initio calculations. Our results provide evidence that a chemical reactive interface exists consisting of a mixed Si-Pr oxide such as (Pr2O3)x(SiO2)1−x, typically in non-stoichiometric composition. There is no formation of neither an interfacial SiO2 nor interfacial silicide: all Si-Pr bonds are oxidized and all SiO4 units dissolve in the Pr oxide. Interfacial silicates like (Pr2O3)x(SiO2)1−x are promising high-k dielectric materials because they represent incremental modification of SiO2 films by Pr ions so that the interface characteristics can be similar to Si-SiO2 interface properties. Under ultrahigh vacuum conditions, silicide formation is observed when the silicate film is heated above 800∘C. The praseodymium silicate system observed at the interface between Si(001) and Pr2O3 offers greater flexibility towards integration of Pr2O3 into future CMOS technologies. KW - high-k KW - Pr2O3 KW - X-ray photoelectron spectroscopy (XPS) KW - ab inito calculations KW - depth profiling KW - silicate Y1 - 2003 UR - http://www.dpg-verhandlungen.de/year/2003/conference/dresden/part/hl/session/40/contribution/1?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Dabrowski, Jarek Marek A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim T1 - Ti-doping of Pr silicate layers for high-k dielectrics applications T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states. KW - high-k KW - X-ray photoelectron spectroscopy KW - ab inito calculations KW - Capacitance-voltage measurements KW - Pr silicate Y1 - 2005 UR - http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/df/session/6/contribution/5?lan=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - JOUR A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Schmeißer, Dieter A1 - Dabrowski, Jarek Marek T1 - Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization Y1 - 2006 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek T1 - Silicate Layer Formation at the Pr2O3 / Si(001) Interfaces T2 - Applied Physics Letters N2 - We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1%D710-8 mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies. Y1 - 2004 SN - 1077-3118 VL - 85 IS - 1 SP - 88 EP - 90 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Formanek, Peter A1 - Schmeißer, Dieter A1 - Sorge, Roland A1 - Wenger, Christian A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations T2 - Materials Science in Semiconductor Processing N2 - We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode. KW - High-k dielectrics KW - Photoelectron spectroscopy KW - Interface reaction Y1 - 2004 SN - 1369-8001 VL - 7 IS - 4-6 SP - 215 EP - 220 ER - TY - GEN A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek A1 - Wenger, Christian A1 - Lupina, Grzegorz A1 - Sorge, Roland A1 - Formanek, Peter A1 - Zaumseil, Peter A1 - Schmeißer, Dieter T1 - Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2 T2 - MRS Proceedings Y1 - 2004 SN - 1946-4274 VL - 811 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Dabrowski, Jarek Marek A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Praseodymium silicate layers with atomically abrupt interface on Si(100) T2 - Applied Physics Letters Y1 - 2005 SN - 0003-6951 VL - 87 IS - 5 ER - TY - GEN A1 - Dudek, Piotr T. A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Bauer, Jakob A1 - Fursenko, Oksana A1 - Dabrowski, Jarek Marek A1 - Schmidt, R. A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schröder, Thomas A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 T2 - Journal of Vacuum Science and Technology / B Y1 - 2011 SN - 2166-2754 VL - 29 IS - 1 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Giussani, A. A1 - Schubert, Markus Andreas A1 - Lupina, Grzegorz A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Reichling, M. A1 - Schröder, Thomas T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems T2 - Physical Review Y1 - 2012 UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302 U6 - https://doi.org/10.1103/PhysRevB.85.035302 SN - 1098-0121 VL - 85 IS - 3 SP - 035302 EP - 035311 ER - TY - GEN A1 - Niu, Gang A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Schroeder, Thomas T1 - Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring T2 - Applied Physics Letters Y1 - 2013 VL - 102 SP - 011906-1 EP - 011906-5 ER - TY - GEN A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Oberbeck, Lars A1 - Schroeder, Uwe A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films T2 - Journal of the electrochemical society Y1 - 2008 U6 - https://doi.org/10.1149/1.2875741 SN - 1945-7111 VL - 155 IS - 5 SP - G97 EP - G114 ER - TY - GEN A1 - Sana, Prabha A1 - Tetzner, Henriette A1 - Dabrowski, Jarek Marek A1 - Tarnawska, Lidia Lupina A1 - Costina, Ioan A1 - Thapa, Sarad A1 - Storck, Peter A1 - Schröder, Thomas A1 - Zöllner, Marvin Hartwig T1 - Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4963826 SN - 1089-7550 SN - 0021-8979 VL - 120 SP - 135103 ER -