TY - GEN A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann Y1 - 2005 SN - 3-86537-328-3 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Direct Extraction of HBT Equivalent Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency T2 - 1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California Y1 - 1999 SN - 0-7803-5135-5 SP - 741 EP - 744 PB - Piscataway, NJ CY - IEEE ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - On the Gunn Effect in GaAs HBTs Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Lenk, Friedrich T1 - Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3 Y1 - 2001 SN - 0-7803-6538-0 SP - 1967 EP - 1970 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels T2 - IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, Vol. 2 Y1 - 2002 SN - 0-7803-7239-5 SP - 997 EP - 1000 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal Modeling of High-Voltage GaAs Power HBTs Y1 - 2005 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - New Algorithm for Extraction of FET Noise Model Parameters Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - New GaInP/GaAs-HBT Large-Signal Model for Power Applications Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Richter, E. T1 - Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - A Universal Measurement System for Microwave Power Transistors Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - An HBT Noise Model Valid up to Transit Frequency Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter A1 - Prinzler, H. A1 - Böck, Georg T1 - Experimental Evaluation of Microwave Field-EffectTransistor Noise Models Y1 - 1999 ER -