TY - GEN A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann Y1 - 2005 SN - 3-86537-328-3 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Direct Extraction of HBT Equivalent Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency T2 - 1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California Y1 - 1999 SN - 0-7803-5135-5 SP - 741 EP - 744 PB - Piscataway, NJ CY - IEEE ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - On the Gunn Effect in GaAs HBTs Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Lenk, Friedrich T1 - Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3 Y1 - 2001 SN - 0-7803-6538-0 SP - 1967 EP - 1970 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels T2 - IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, Vol. 2 Y1 - 2002 SN - 0-7803-7239-5 SP - 997 EP - 1000 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal Modeling of High-Voltage GaAs Power HBTs Y1 - 2005 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - New Algorithm for Extraction of FET Noise Model Parameters Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - New GaInP/GaAs-HBT Large-Signal Model for Power Applications Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Richter, E. T1 - Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - A Universal Measurement System for Microwave Power Transistors Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - An HBT Noise Model Valid up to Transit Frequency Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter A1 - Prinzler, H. A1 - Böck, Georg T1 - Experimental Evaluation of Microwave Field-EffectTransistor Noise Models Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Harmonic Tuning of Power Transistors by Active Load-Pull Measurement Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Beilenhoff, K. T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Klapproth, L. A1 - Böck, Georg T1 - Direct Extraction of FET Noise Models from Noise Figure Measurements Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Beilenhoff, K. T1 - Unified Model for Collector Charge in Heterojunction Bipolar Transistors Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Sheinman, B. A1 - Wasige, E. A1 - Dörner, Ralf A1 - Sidorov, V. A1 - Cohen, S. A1 - Ritter, Dan T1 - A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit Y1 - 2002 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Beilenhoff, K. A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Rumiantsev, Andrej A1 - Rudolph, Matthias T1 - Calibration Residual Error Propagation Analysis Using Conformal Mapping T2 - 77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011 Y1 - 2011 SN - 978-1-61284-959-1 PB - Piscataway, NJ CY - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Ngnintedem, Eric A1 - Heinrich, Wolfgang T1 - Noise Modeling of GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6476772 SN - 978-1-4673-2302-4 SN - 978-2-87487-026-2 SP - 159 EP - 162 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rumiantsev, Andrej A1 - Dörner, Ralf A1 - Lenk, Friedrich T1 - Impact of in-situ TRL reference impedance determination on parameter extraction T2 - Microwave Conference (EuMC), 2012 42nd European, Amsterdam, Netherlands, 29 October - 1 November 2012 N2 - This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe:C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified. Y1 - 2012 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6459080 SN - 978-1-4673-2215-7 SN - 978-2-87487-026-2 SP - 593 EP - 596 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf T1 - New extraction method for FET extrinsic capacitances using active bias conditions T2 - IEEE MTT-S International Microwave Symposium digest, June 7 - 12, 1998, Baltimore Convention Center, Baltimore, Maryland N2 - A new procedure for extracting the extrinsic capacitances of FETs is presented. It requires measurements only in the active bias regime. The method utilizes the symmetry of the intrinsic FET in the forward and reverse biased operating regime. The extraction is performed analytically and does not require any optimization. Y1 - 1998 SN - 0-7803-4471-5 U6 - https://doi.org/10.1109/MWSYM.1998.689374 SP - 279 EP - 282 PB - IEEE Publication CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf T1 - Improved parameter extraction of small-sized FETs for low-power applications T2 - 2000 IEEE MTT-S International Microwave Symposium digest, June 11 - 16, 2000, Hynes Convention Center, Boston, Massachusetts, vol. 3 N2 - In low-power applications FETs with small gate width are required. For such devices common extraction methods fail. In particular, extracting source inductance and drain pad capacitance using "cold"-FET measurements is no longer possible. We present an improved method that allows reliable extraction of extrinsic elements for small-sized FETs. Y1 - 2000 SN - 0-7803-5687-X U6 - https://doi.org/10.1109/MWSYM.2000.862233 SP - 1389 EP - 1392 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf T1 - A new multiport measurement-method using a two-port network analyzer T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A new method is presented how to characterize multiport devices using a two-port vector network-analyzer (VNA). Up to now, at least one of the port terminations had to be fully known to measure the S-parameters of the device. Our new measurement method overcomes this restriction. All of the device parameters and all of the port terminations are calculated from the device measurements. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1517031 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Berndt, Sebastian A1 - Mrosk, Till A1 - Dörner, Ralf A1 - Lenk, Friedrich T1 - Residual errors in coplanar on-chip 1-port calibration caused by standard deviations T2 - Microwave Measurement Conference (ARFTG), 2013 81st ARFTG, Seattle, Washington, USA, 7 June 2013 N2 - The uncertainty calculation for on-wafer 1-port S-Parameter measurements due to the uncertainty of coplanar on-chip calibration standards is presented. Analytical expressions for the sensitivities are used and applied for typical fabrication tolerances of monolithic integrated on-chip structures. The method is verified for OSM calibration by means of simulations with a commercial calibration software as well as by measurements, where test-structures with artificial errors were used. In each case the analytically calculated deviation is compared to a numerical approach and good agreement is found. All results are given for a MMIC process on GaAs, but can be adopted for other technologies. Y1 - 2013 SN - 978-1-4673-4981-9 U6 - https://doi.org/10.1109/ARFTG.2013.6579054 SP - 141 EP - 144 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Kurpas, Paul A1 - Rumiantsev, Andrej T1 - Measurement uncertainties due to non-ideal calibration standards for unknown thru calibration T2 - Microwave Measurement Conference (ARFTG), 2013 81st ARFTG Y1 - 2013 SN - 978-1-4673-4981-9 U6 - https://doi.org/10.1109/ARFTG.2013.6579057 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Towards a Large-Signal Noise Model for GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SP - 484 EP - 487 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Rumiantsev, Andrej A1 - Dörner, Ralf T1 - RF Probe Technology: History and Selected Topics T2 - IEEE microwave magazine Y1 - 2013 U6 - https://doi.org/10.1109/MMM.2013.2280241 VL - 14 IS - 7 SP - 46 EP - 58 ER - TY - GEN A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Rumiantsev, Andrej T1 - Sensitivity Analysis of S-Parameter Measurements Due to Calibration Standards Uncertainty T2 - IEEE Transactions on Microwave Theory and Techniques Y1 - 2013 U6 - https://doi.org/10.1109/TMTT.2013.2279774 SN - 0018-9480 VL - 61 IS - 10 SP - 3800 EP - 3807 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices T2 - GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany Y1 - 2014 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6775103&isnumber=6775099 SN - 978-3-8007-3585-3 PB - VDE-Verl. CY - Berlin [u.a.] ER - TY - CHAP A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - GaN HEMT Noise Model Performance under Nonlinear Operation T2 - Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC) Y1 - 2014 U6 - https://doi.org/10.1109/EuMIC.2014.6997895 SP - 472 EP - 475 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - GaN HEMT Noise Model Performance under Nonlinear Operation T2 - Proceedings, 44th European Microwave Conference Y1 - 2014 SN - 978-2-87487-035-4 U6 - https://doi.org/10.1109/EuMC.2014.6986711 SP - 1416 EP - 1419 PB - IEEE ER - TY - GEN A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - Modeling Nonlinear White Noise in GaN HEMT Devices T2 - Frequenz Y1 - 2015 VL - 69 IS - 1-2 SP - 47 EP - 55 ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive T2 - Proceedings of 45th European Microwave Conference, Paris 2015 Y1 - 2015 U6 - https://doi.org/10.1109/EuMC.2015.7345742 SP - 231 EP - 234 PB - IEEE ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications T2 - IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015 Y1 - 2015 U6 - https://doi.org/10.1109/MWSYM.2015.7166766 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER -