TY - GEN A1 - Buß, Lars A1 - Sulaiman, Cathy A1 - Sánchez-Barquilla, Raquel A1 - Cojocariu, Iulia A1 - Szpytma, Marcin A1 - Menteş, Tevfik Onur A1 - Locatelli, Andrea A1 - Falta, Jens A1 - Flege, Jan Ingo T1 - Rise and fall of 1T-TaS₂ : epitaxial growth of monolayer TaS₂ on Au(111) T2 - Physical review materials N2 - Monolayer tantalum disulfide epitaxially grown on Au(111) is studied in real time during molecular beam epitaxy using low-energy electron microscopy and microdiffraction. Complementary x-ray photoelectron emission microscopy provides insight into the chemical and electronic structure of the grown layers. Our study reveals a previously unreported growth mechanism where the formation of 2⁢H−TaS2 proceeds via a transient 1⁢T−TaS2 phase. The 1⁢T−TaS2 phase exhibits a significantly higher growth rate than the 2⁢H−TaS2 phase, with growth proceeding mainly in the 1T phase. By comparison with TaSe2 on Au(111), we find that this growth mechanism is common to other Ta-based transition-metal dichalcogenides on Au(111). Furthermore, we find spectroscopic evidence for the presence of charge-density-wave order in 1⁢T−TaS2 on Au(111). These findings provide perspectives on the growth dynamics and phase control of TaS2, opening up avenues for tailoring its electronic properties through substrate interaction and phase engineering. KW - LEEM KW - Low-energy electron microscopy Y1 - 2025 U6 - https://doi.org/10.1103/1bxg-yvw2 SN - 2475-9953 VL - 9 IS - 7 SP - 1 EP - 9 PB - American Physical Society (APS) CY - College Park, MD ER -