TY - GEN A1 - Meinel, Birgit A1 - Koschwitz, Tim A1 - Blocks, Christian A1 - Acker, Jörg T1 - Comparison of diamond wire cut and silicon carbide slurry processed silicon wafer surfaces after acidic texturisation T2 - Materials Science in Semiconductor Processing N2 - Our work focuses on the acidic etching of silicon wafers, cut via diamond wire (DW) or silicon carbide slurry process (SP). The DW and SP as-cut wafer surface structures have a significant impact on the evolution of the two resultant and different etched morphologies. The time-dependent development of the surface morphology for mono- and multi-crystalline wafers is compared and analyzed via etch rates, reflectivity measurements and confocal microscopy. The as-cut structure of the differently sawn wafers defines a template where the etch attack preferentially occurs and predetermines the texturisation of the etched surface. Based on the experimental results it is possible to lower the reflectivity of the SP-sawn wafers by varying the acidic mixture. On the contrary, the DW-sawn wafers obtain only a small enlargement of the folded surface area during acidic texturisation and no influence of different acidic etch solutions on the reflectivity values was found. To create homogeneously texturized DW-sawn wafers of low reflectivity, an adaptation of the sawing process as well as the development of new etchants and new etch conditions is necessary. KW - Surface morphology KW - Confocal microscopy KW - Acidic etching KW - Texturisation KW - Diamond wire sawing KW - Slurry sawing KW - silicon KW - solar cell KW - chemical analysis Y1 - 2014 UR - http://www.sciencedirect.com/science/article/pii/S1369800114001875 U6 - https://doi.org/10.1016/j.mssp.2014.03.046 SN - 1369-8001 VL - 26 SP - 93 EP - 100 ER -