TY - GEN A1 - Schmidt, Thomas A1 - Ahrens, Christian A1 - Flege, Jan Ingo A1 - Jaye, Cherno A1 - Fischer, Daniel A. A1 - Falta, Jens T1 - Growth of Epitaxial 3,4,9,10-Perylene Tetracarboxylic Dianhydride on Bi-Terminated Silicon T2 - Journal of Physical Chemistry C N2 - The epitaxial quality of thin films crucially depends on their interaction with the substrate. Up to now, Ag-terminated Si(111) has been employed as the model substrate for the growth of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on semiconductors. In this study, we will show that Bi termination results in PTCDA films of superior epitaxial quality. We have studied the growth of PTCDA on bismuth-passivated Si(111) in detail by means of spot profile analysis of low-energy electron diffraction (SPA-LEED), X-ray photoemission spectroscopy (XPS), near-edge X-ray absorptionfine structure (NEXAFS), and scanning tunneling microscopy (STM). The XPS results reveal the presence of intact PTCDA molecules on the surface upon adsorption. NEXAFS data indicate the PTCDA molecules being oriented with their molecular plane parallel to the surface. STM shows a very smooth growth front of the PTCDA film, preserving the step structure of the substrate. High-resolution SPA-LEED data demonstrate the presence of a multidomain surface with a rich variety of PTCDA surface structures, which were identified to be most prominently herring-bone polytypes. However, in the monolayer range, quadratic brick-wall structures and a nearly square-like structure as well as a perylene-like structure have also been found. Despite the simultaneous presence of multiple domains, the individual domains show excellent lateral ordering, with larger domain sizes as compared to the case of Ag-terminated Si(111). KW - dianhydride KW - Bi-terminated silicon KW - spot profile analysis of low-energy electron diffraction (SPA-LEED) KW - X-ray photoemission spectroscopy (XPS) KW - near-edge X-ray absorptionfine structure (NEXAFS) KW - scanning tunneling microscopy (STM) Y1 - 2019 U6 - https://doi.org/10.1021/acs.jpcc.8b10396 SN - 1932-7447 SN - 1932-7455 VL - 123 IS - 12 SP - 7097 EP - 7109 ER -