TY - CHAP A1 - Choudhury, Sakeb Hasan A1 - Tallarida, Massimo A1 - Das, Chittaranjan A1 - Schmeißer, Dieter T1 - Atomic layer deposition of Ga2O3 using Tri-methyl-Gallium and H2O T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Considering numerous applications such as transparent conducting oxides, gas sensors, photovoltaic applications, deep UV photo detectors, field effect transistors and spintronics gallium oxide (Ga2O3) has earned quite a lot of focus recently. Various techniques have already been demonstrated to produce Ga2O3 naming evaporation, sputtering, pulsed laser deposition, chemical vapor deposition and atomic layer deposition (ALD). Among them, ALD gives the possibility of controlling the thickness at the atomic level, good step coverage and delivers dense and homogeneous films. In this contribution, we report on the growth of ALD Ga2O3 using trimethylgallium (TMG) and H2O as metal and oxygen precursors, respectively. We deposited thin Ga2O3 films on Si, TiO2, Al2O3 and RuO2 over a temperature range of 150-300°C and characterized them by X-ray photo emission spectroscopy and atomic force microscopy. From this study, we are able to discuss the influence of the temperature on the growth dynamics of Ga2O3 and its chemical composition. KW - atomic layer deposition KW - Ga2O3 KW - X-ray photoelectron spectroscopy (XPS) KW - Si, TiO2 , Al2O3 and RuO2 substrates Y1 - 2013 UR - http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/4/contribution/2?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -