TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang A1 - Meliani, Chafik T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs Y1 - 2005 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions Y1 - 2004 ER - TY - CHAP A1 - Schott, Matthias A1 - Lenk, Friedrich A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - Low phase noise X-band push-push oscillator with frequency divider T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4%. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1516986 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Meliani, Chafik A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang T1 - 24 GHz Low Power VCOs and Analog Frequency Dividers T2 - IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA N2 - 24 GHz VCOs and frequency dividers with very low power consumption are presented. The circuits are realized as GaAs HBT MMICs. They comprise a VCO with high efficiency >17% and 12% tuning range at only 18 mW DC consumption as well as several frequency dividers. In order to minimize power consumption, the latter use the injection-locked frequency-divider (ILFD) concept. Divider ratios of 2 and 4 are realized, power consumption as low as 25 mW for a divider-by-2 is achieved. This demonstrates the capabilities of the analog concept in realizing dividers for mm-wave frequencies at DC consumption levels far below their digital counterparts Y1 - 2006 SN - 0-7803-9541-7 U6 - https://doi.org/10.1109/MWSYM.2006.249744 SP - 1801 EP - 1804 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - GEN A1 - Kraemer, Thorsten A1 - Meliani, Chafik A1 - Lenk, Friedrich A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers T2 - Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008 N2 - We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized. Y1 - 2008 SN - 978-1-4244-2258-6 SN - 978-1-4244-2259-3 U6 - https://doi.org/10.1109/ICIPRM.2008.4702999 SP - 1 EP - 3 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik T1 - On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals Y1 - 2006 ER -