TY - GEN A1 - Fischer, Inga Anita A1 - Brehm, Moritz A1 - De Seta, Monica A1 - Isella, Giovanni A1 - Paul, Douglas J. A1 - Virgilio, Michele A1 - Capellini, Giovanni T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next? T2 - APL Photonics N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform KW - Heterostructures KW - Photodetectors KW - Photonics KW - Nanowires KW - Plasmonics KW - Epitaxy KW - Quantum wells KW - Lasers KW - Sensors KW - Electronic band structure Y1 - 2022 UR - https://aip.scitation.org/doi/10.1063/5.0078608 U6 - https://doi.org/10.1063/5.0078608 SN - 2378-0967 VL - 7 IS - 5 SP - 050901-1 EP - 050901-20 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Clausen, Caterina J. A1 - Schwarz, Daniel A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Virgilio, Michele A1 - Da Silva Figueira, Maria Cecilia A1 - Birner, Stefan A1 - Koelling, Sebastian A1 - Koenraad, Paul M. A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Wendav, Torsten A1 - Busch, Kurt A1 - Schulze, Jörg T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells T2 - Physical Review Materials Y1 - 2020 U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601 SN - 2475-9953 VL - 4 IS - 2 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Schlipf, Jon A1 - Tetzner, Henriette A1 - Spirito, Davide A1 - Manganelli, Constanza Lucia A1 - Capellini, Giovanni A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Clausen, Caterina J. A1 - Elsayed, Ahmed A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content T2 - Journal of Raman Spectroscopy Y1 - 2021 U6 - https://doi.org/10.1002/jrs.6098 SN - 1097-4555 ER - TY - GEN A1 - Tetzner, Henriette A1 - Fischer, Inga Anita A1 - Skibitzki, Oliver A1 - Mirza, M. M. A1 - Manganelli, Constanza Lucia A1 - Luongo, G. A1 - Spirito, Davide A1 - Douglas, J. P. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) T2 - Applied Physics Letters Y1 - 2021 U6 - https://doi.org/10.1063/5.0064477 SN - 1077-3118 SN - 0003-6951 VL - 119 IS - 15 ER - TY - GEN A1 - Tetzner, Henriette A1 - Seifert, W. A1 - Skibitzki, Oliver A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Mirza, M. M. A1 - Fischer, Inga Anita A1 - Paul, Douglas J. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) T2 - Applied Physics Letter Y1 - 2023 U6 - https://doi.org/10.1063/5.0152962 SN - 1077-3118 VL - 122 IS - 24 ER - TY - GEN A1 - Hayat, Ahsan A1 - Spirito, Davide A1 - Corley-Wiciak, Agnieszka Anna A1 - Schubert, Markus Andreas A1 - Masood, Maria A1 - Reichmann, Felix A1 - Ratzke, Markus A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates T2 - Materials Science in Semiconductor Processing Y1 - 2023 U6 - https://doi.org/10.1016/j.mssp.2023.107693 SN - 1873-4081 VL - 165 ER -