TY - GEN A1 - Salvalaglio, Marco A1 - Bergamaschini, Roberto A1 - Isa, Fabio A1 - Scaccabarozi, Andrea A1 - Isella, Giovanni A1 - Backofen, Rainer A1 - Voigt, Axel A1 - Montalenti, Francesco A1 - Capellini, Giovanni A1 - Marzegalli, Anna A1 - Schroeder, Thomas A1 - Känel, Hans von A1 - Miglio, Leo T1 - Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b05054 SN - 1944-8244 VL - 7 IS - 34 SP - 19219 EP - 19225 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Brehm, Moritz A1 - De Seta, Monica A1 - Isella, Giovanni A1 - Paul, Douglas J. A1 - Virgilio, Michele A1 - Capellini, Giovanni T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next? T2 - APL Photonics N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform KW - Heterostructures KW - Photodetectors KW - Photonics KW - Nanowires KW - Plasmonics KW - Epitaxy KW - Quantum wells KW - Lasers KW - Sensors KW - Electronic band structure Y1 - 2022 UR - https://aip.scitation.org/doi/10.1063/5.0078608 U6 - https://doi.org/10.1063/5.0078608 SN - 2378-0967 VL - 7 IS - 5 SP - 050901-1 EP - 050901-20 ER - TY - GEN A1 - Capellini, Giovanni A1 - De Seta, Monica A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schroeder, Thomas T1 - High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3702443 SN - 0021-8979 VL - 111 IS - 7 ER - TY - GEN A1 - Capellini, Giovanni A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Tillack, Bernd A1 - Ghrib, A. A1 - Kersauson, M. de A1 - El Kurdi, M. A1 - Boucaud, P. A1 - Schroeder, Thomas T1 - Tensile strained Ge layers obtained via Si-CMOS compatible approach T2 - Journal of Applied Physics Y1 - 2013 VL - 113 IS - 1 SP - 013513-1 EP - 013513-6 ER - TY - GEN A1 - Virgilio, Michele A1 - Manganelli, Constanza Lucia A1 - Grosso, G. A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 114 IS - 24 SP - 243102 EP - 243102-11 ER - TY - GEN A1 - Di Gaspare, L. A1 - Sabbagh, D. A1 - De Seta, Monica A1 - Sodo, A. A1 - Wirths, S. A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - A very low temperature epi-cleaning process for Ge / GeSn heterostructures T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4906616 SN - 1089-7550 VL - 117 SP - 045306 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Asano, Takanori A1 - Yamaha, Takashi A1 - Terashima, Tatsuya A1 - Nakatsuka, Osamu A1 - Costina, Ioan A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Zaima, Shigeaki A1 - Schroeder, Thomas T1 - Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4908121 SN - 1077-3118 VL - 106 SP - 061107-1 EP - 061107-5 ER - TY - GEN A1 - Chahine, Gilbert A. A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Subhajit, G. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Schroeder, Thomas A1 - Schülli, Tobias U. T1 - Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4909529 SN - 1077-3118 VL - 106 SP - 071902-1 EP - 071902-4 ER - TY - GEN A1 - Virgilio, Michele A1 - Witzigmann, Bernd A1 - Bolognini, Gabriele A1 - Guha, Subhajit A1 - Schröder, Thomas A1 - Capellini, Giovanni T1 - CMOS-compatible, modulator concept based on strain-induced refractive-index modulation T2 - Optics Express Y1 - 2015 U6 - https://doi.org/10.1364/OE.23.005930 SN - 1094-4087 VL - 23 IS - 5 SP - 5930 EP - 5940 ER - TY - GEN A1 - Koczorowski, Wojciech A1 - Grzela, Tomasz A1 - Radny, M. W. A1 - Schofield, S. R. A1 - Capellini, Giovanni A1 - Czajka, Ryszard A1 - Schröder, Thomas A1 - Curson, Neil J. T1 - Ba termination of Ge(001) studied with STM T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/15/155701 SN - 1361-6528 SN - 0957-4484 VL - 26 IS - 15 SP - 155701 ER - TY - GEN A1 - Peschka, Dirk A1 - Thomas, Marc A1 - Glitzky, Annegret A1 - Nürnberg, Reiner A1 - Gärtner, Klaus A1 - Virgilio, Michele A1 - Guha, Shekhar A1 - Schröder, Thomas A1 - Capellini, Giovanni A1 - Koprucki, Thomas T1 - Modeling of edge-emitting lasers based on tensile strained Germanium microstripes T2 - IEEE Photonics Journal Y1 - 2015 U6 - https://doi.org/10.1109/JPHOT.2015.2427093 SN - 1943-0655 N1 - Article 1502115 VL - 7 IS - 3 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Reich, Christian A1 - Capellini, Giovanni A1 - Montalenti, Francesco A1 - Marzegalli, Anna A1 - Xie, Ya-Hong A1 - Schülli, Tobias U. A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/am508968b SN - 1944-8252 VL - 7 IS - 17 SP - 9031 EP - 9037 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, M. A1 - Capellini, Giovanni A1 - Skibitzki, Oliver A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas T1 - Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/35/355707 SN - 1361-6528 VL - 26 IS - 35 SP - 355707 ER - TY - GEN A1 - Wendav, Torsten A1 - Fischer, Inga Anita A1 - Virgilio, Michele A1 - Capellini, Giovanni A1 - Oliveira, F. A1 - Cerqueira, M. F. A1 - Benedetti, Alessandro A1 - Chiussi, Stefano A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Busch, Kurt A1 - Schulze, J. T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T2 - Physical Review B 94 Y1 - 2016 U6 - https://doi.org/10.1103/PhysRevB.94.245304 VL - 94 IS - 24 SP - 245304 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Zöllner, Marvin Hartwig A1 - Niermann, T. A1 - Dietrich, Burkhart A1 - Capellini, Giovanni A1 - Thapa, Sarad A1 - Häberlen, Maik A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Zero Lattice Mismatch and Truly Single Crystalline ScN Buffer Layers for GaN Growth on Silicon T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4935856 SN - 1077-3118 SN - 0003-6951 VL - 107 IS - 20 SP - 201907 ER - TY - GEN A1 - Richard, Marie-Ingrid A1 - Zöllner, Marvin Hartwig A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schülli, Tobias U. A1 - Schröder, Thomas T1 - Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b08645 SN - 1944-8244 SN - 1944-8252 VL - 7 IS - 48 SP - 26696 EP - 26700 ER - TY - GEN A1 - Virgilio, Michele A1 - Schröder, Thomas A1 - Yamamoto, Yuji A1 - Capellini, Giovanni T1 - Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4938026 SN - 1089-7550 SN - 0021-8979 VL - 118 IS - 23 SP - 233110 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Lupina, Grzegorz A1 - Niermann, Tore A1 - Salvalaglio, Marco A1 - Marzegalli, Anna A1 - Schubert, Markus Andreas A1 - Zaumseil, Peter A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Montalenti, Francesco A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns T2 - ACS Applied Materials and Interfaces Y1 - 2016 SN - 1944-8252 VL - 8 IS - 3 SP - 2017 EP - 2026 ER - TY - GEN A1 - Peschka, Dirk A1 - Thomas, Marita A1 - Glitzky, Annegret A1 - Nürnberg, Reiner A1 - Virgilio, Michele A1 - Guha, Subhajit A1 - Schröder, Thomas A1 - Capellini, Giovanni A1 - Koprucki, Thomas T1 - Robustness analysis of a device concept for edge-emitting lasers based on strained Germanium T2 - Optical and Quantum Electronics Y1 - 2016 U6 - https://doi.org/10.1007/s11082-016-0394-4 SN - 1572-817X VL - 48 IS - 2, Article 156 ER - TY - GEN A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Schröder, Thomas T1 - Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon T2 - Solid State Phenomena Y1 - 2016 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.402 SN - 1662-9779 SN - 0377-6883 VL - 242 SP - 402 EP - 407 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Capellini, Giovanni A1 - Driesch, Nils von den A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Klesse, Wolfgang Matthias A1 - Montanari, Michele A1 - Schröder, Thomas T1 - Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer T2 - Applied Physics Express Y1 - 2016 U6 - https://doi.org/10.7567/APEX.9.031201 SN - 1882-0786 SN - 1882-0778 VL - 9 IS - 3 SP - 031201 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Hatami, Fariba A1 - Bartolomeo, Antonio di A1 - Niermann, Tore A1 - Hameed, Hussein Emad A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Zaumseil, Peter A1 - Skibitzki, Oliver A1 - Masselink, William T. A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b09592 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 40 SP - 26948 EP - 26955 ER - TY - GEN A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Schröder, Thomas A1 - Ballabio, Andrea A1 - Bergamaschini, Roberto A1 - Salvalaglio, Marco A1 - Miglio, Leo A1 - Montalenti, Francesco T1 - RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b07694 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 39 SP - 26374 EP - 26380 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Klesse, Wolfgang Matthias A1 - Niu, Gang A1 - Taoka, Noriyuki A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Barget, M. R. A1 - Zaumseil, Peter A1 - Känel, Hans von A1 - Schubert, Markus Andreas A1 - Capellini, Giovanni A1 - Schroeder, Thomas T1 - Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4967500 SN - 1077-3118 VL - 109 IS - 20 SP - 202102 ER - TY - GEN A1 - Grzela, Tomasz A1 - Capellini, Giovanni A1 - Koczorowski, Wojciech A1 - Schubert, Markus Andreas A1 - Czajka, Ryszard A1 - Curson, Neil J. A1 - Heidmann, Inga A1 - Schmidt, Thomas A1 - Falta, Jens A1 - Schröder, Thomas T1 - Growth and evolution of nickel – germanide nanonstructures on Ge(001) T2 - Nanotechnology Y1 - 2015 SN - 1361-6528 SN - 0957-4484 VL - 26 IS - 38 SP - 385701 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Clausen, Caterina J. A1 - Schwarz, Daniel A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Virgilio, Michele A1 - Da Silva Figueira, Maria Cecilia A1 - Birner, Stefan A1 - Koelling, Sebastian A1 - Koenraad, Paul M. A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Wendav, Torsten A1 - Busch, Kurt A1 - Schulze, Jörg T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells T2 - Physical Review Materials Y1 - 2020 U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601 SN - 2475-9953 VL - 4 IS - 2 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Schlipf, Jon A1 - Tetzner, Henriette A1 - Spirito, Davide A1 - Manganelli, Constanza Lucia A1 - Capellini, Giovanni A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Clausen, Caterina J. A1 - Elsayed, Ahmed A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content T2 - Journal of Raman Spectroscopy Y1 - 2021 U6 - https://doi.org/10.1002/jrs.6098 SN - 1097-4555 ER - TY - GEN A1 - Tetzner, Henriette A1 - Fischer, Inga Anita A1 - Skibitzki, Oliver A1 - Mirza, M. M. A1 - Manganelli, Constanza Lucia A1 - Luongo, G. A1 - Spirito, Davide A1 - Douglas, J. P. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) T2 - Applied Physics Letters Y1 - 2021 U6 - https://doi.org/10.1063/5.0064477 SN - 1077-3118 SN - 0003-6951 VL - 119 IS - 15 ER - TY - GEN A1 - Tetzner, Henriette A1 - Seifert, W. A1 - Skibitzki, Oliver A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Mirza, M. M. A1 - Fischer, Inga Anita A1 - Paul, Douglas J. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) T2 - Applied Physics Letter Y1 - 2023 U6 - https://doi.org/10.1063/5.0152962 SN - 1077-3118 VL - 122 IS - 24 ER - TY - GEN A1 - Hayat, Ahsan A1 - Spirito, Davide A1 - Corley-Wiciak, Agnieszka Anna A1 - Schubert, Markus Andreas A1 - Masood, Maria A1 - Reichmann, Felix A1 - Ratzke, Markus A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates T2 - Materials Science in Semiconductor Processing Y1 - 2023 U6 - https://doi.org/10.1016/j.mssp.2023.107693 SN - 1873-4081 VL - 165 ER -