TY - GEN A1 - Lange, Felix A1 - Ernst, Owen C. A1 - Teubner, Thomas A1 - Richter, Carsten A1 - Schmidbauer, Martin A1 - Skibitzki, Oliver A1 - Schroeder, Thomas A1 - Schmidt, Peer A1 - Boeck, Torsten T1 - In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates T2 - Nano Futures N2 - Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements. KW - Crystal growth KW - Silicon KW - Germanium KW - Phase diagram Y1 - 2020 UR - https://iopscience.iop.org/article/10.1088/2399-1984/ab82a0 U6 - https://doi.org/10.1088/2399-1984/ab82a0 SN - 2399-1984 VL - 4 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Voss, Heike A1 - Zahedi-Azad, Setareh A1 - Ernst, Owen C. A1 - Lucaßen, Jan A1 - Mann, Guido A1 - Bonse, Jörn A1 - Boeck, Torsten A1 - Martin, Jens A1 - Schmid, Martina A1 - Krüger, Jörg T1 - Chemical vapor deposition of indium precursors for solar micro-absorbers using continuous laser radiation T2 - Applied physics. A, Materials science & processing N2 - Localized deposition of indium on an amorphous glass surface covered with a thin molybdenum layer is demonstrated utilizing laser-assisted chemical vapor deposition. A continuous-wave laser causes a temperature rise on the molybdenum layer resulting in the selective aggregation of liquid and ultimately crystalline structures of indium. The formation sites of the indium are determined by the decomposition of gaseous trimethylindium. The deposited indium islands can serve as precursors and could be further processed into compound semiconductors like CuInSe2 for micro-concentrator solar cells. The experimental investigations were supported by theoretical simulations of the laser heating process to calculate the local temperature distribution on the surface of the molybdenum-covered glass substrate. KW - Chemical Vapor Deposition KW - Laser Technology KW - Microconcentrator KW - Solar Cell KW - Materials Science KW - Materials Chemistry KW - Materials Engineering KW - Optical Materials KW - Laser Material Processing Y1 - 2025 UR - https://link.springer.com/article/10.1007/s00339-025-08895-z U6 - https://doi.org/10.1007/s00339-025-08895-z SN - 1432-0630 VL - 131 SP - 1 EP - 10 PB - Springer CY - Berlin ; Heidelberg ER -