TY - RPRT A1 - Bett, Andreas W. A1 - Erlach, Berit A1 - Gölz, Sebastian A1 - Gutnik, Magdalena A1 - Hentschel, Anja A1 - Hirschl, Bernd A1 - Hübner, Gundula A1 - Kienzlen, Volker A1 - Matthies, Ellen A1 - Müller, Florian J. Y. A1 - Münch, Wolfram A1 - O'Sullivan, Marlene A1 - Rech, Bernd A1 - Reusswig, Fritz A1 - Schöbel-Rutschmann, Sören A1 - Schomerus, Thomas A1 - Stryi-Hipp, Gerhard T1 - Vorschläge für einen klimagerechten Ausbau der Photovoltaik und Windenergie N2 - Photovoltaik- und Windenergieanlagen spielen eine Schlüsselrolle für eine klimagerechte Energieversorgung. Zukünftig werden sie einen Großteil des Energiebedarfs decken – auch in den Sektoren Wärme und Verkehr. Studien zeigen: Für Klimaneutralität 2045 muss die Ausbaugeschwindigkeit auf das Drei- bis Vierfache der letzten Jahre erhöht werden. Komplexe und langwierige Planungs- und Genehmigungsverfahren, zu wenig ausgewiesene Flächen und eine unzureichende Bürgerbeteiligung hemmen jedoch den Ausbau. Das Impulspapier „Vorschläge für einen klimagerechten Ausbau der Photovoltaik und Windenergie“ einer interdisziplinären Arbeitsgruppe des Akademienprojekts Energiesysteme der Zukunft (ESYS) nennt zwölf Handlungsoptionen, um Hemmnisse abzubauen und die Ausbaugeschwindigkeit auf die erforderlichen 15 bis 25 Gigawatt pro Jahr zu beschleunigen. KW - Photovoltaik KW - Windenergie KW - Solarenergie KW - Ausbau erneuerbarer Energien Y1 - 2021 UR - https://energiesysteme-zukunft.de/publikationen/stellungnahme/ausbau-photovoltaik-und-windenergie ER - TY - GEN A1 - Gerlach, Dominic A1 - Wippler, David A1 - Wilks, Regan G. A1 - Wimmer, Manuel A1 - Lozac'h, Mickaël A1 - Duarte, Roberto Felix A1 - Ueda, Shigenori A1 - Yoshikawa, Hideki A1 - Lips, Klaus A1 - Rech, Bernd A1 - Sumiya, Masatomo A1 - Kobayashi, Kaoru A1 - Gorgoi, Mihaela A1 - Hüpkes, Jürgen A1 - Bär, Marcus T1 - p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study T2 - IEEE journal of photovoltaics N2 - The chemical and electronic properties of a- Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case. Y1 - 2013 SN - 2156-3381 VL - 3 IS - 1 SP - 483 EP - 487 ER - TY - GEN A1 - Gorgoi, Mihaela A1 - Gerlach, Dominic A1 - Wilks, Regan G. A1 - Wippler, David A1 - Wimmer, Manuel A1 - Lozac'h, Mickaël A1 - Duarte, Roberto Felix A1 - Mück, Leonie Anna A1 - Meier, M. A1 - Ueda, Shigenori A1 - Yoshikawa, Hideki A1 - Lips, Klaus A1 - Rech, Bernd A1 - Sumiya, Masatomo A1 - Hüpkes, Jürgen A1 - Kobayashi, Kaoru A1 - Bär, Marcus T1 - The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact T2 - Applied Physics Letters N2 - The electronic structure of the interface between the boron-doped oxygenated amorphous silicon “window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (−2.87 ± 0.27) eV and (−3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed. Y1 - 2013 SN - 1077-3118 VL - 103 IS - 2 SP - 023903 ER - TY - GEN A1 - Steffens, S. A1 - Becker, C. A1 - Amkreutz, Daniel A1 - Klossek, André A1 - Kittler, Martin A1 - Chen, Y.-Y. A1 - Schnegg, Alexander A1 - Klingsporn, Max A1 - Abou-Ras, Daniel A1 - Lips, Klaus A1 - Rech, Bernd T1 - Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films T2 - Applied Physics Letters Y1 - 2014 U6 - https://doi.org/10.1063/1.4890625 SN - 1077-3118 SN - 0003-6951 VL - 105 IS - 2 SP - 022108 ER - TY - CHAP A1 - Lips, Klaus A1 - Schulze, Tim F. A1 - Starr, David E. A1 - Bär, Marcus A1 - Wilks, Regan G. A1 - Fenske, F. A1 - Ruske, Florian A1 - Reiche, Martin A1 - Krol, Roel van de A1 - Reichardt, Gerd A1 - Schäfers, Franz A1 - Hendel, Stefan A1 - Follath, Rolf A1 - Bahrdt, Johannes A1 - Peredkov, Sergey A1 - DeBeer, Serena A1 - Hävecker, Michael A1 - Knop-Gericke, Axel A1 - Rau, Björn A1 - Kaufmann, Christian A1 - Schlatmann, Rutger A1 - Schlögl, Robert A1 - Rech, Bernd A1 - Raoux, Simone T1 - EMIL: The Energy Materials In-situ Laboratory Berlin – A novel characterization facility for photovoltaic and energy materials T2 - 31st European Photovoltaic Solar Energy Conference and Exhibition, proceedings of the international conference held in Hamburg, Germany, 14 -18 September 2015 Y1 - 2015 SN - 3-936338-39-6 U6 - https://doi.org/10.4229/EUPVSEC20152015-1AO.2.1 SP - 25 EP - 28 PB - WIP CY - München ER - TY - CHAP A1 - Lips, Klaus A1 - Starr, David E. A1 - Bär, Marcus A1 - Schulze, Tim F. A1 - Fenske, F. A1 - Christiansen, Silke A1 - Krol, Roel van de A1 - Raoux, Simone A1 - Reichardt, Gerd A1 - Schäfers, Franz A1 - Hendel, Stefan A1 - Follath, Rolf A1 - Bahrdt, Johannes A1 - Scheer, M. A1 - Wüstefeld, Godehard A1 - Kuske, P. A1 - Hävecker, Michael A1 - Knop-Gericke, Axel A1 - Schlögl, Robert A1 - Rech, Bernd T1 - EMIL: The Energy Materials In Situ Laboratory Berlin T2 - 40th Photovoltaic Specialists Conference (PVSC), 2014 : Colorado Convention Center, Denver, Colorado, 8-13 June 2014 Y1 - 2014 SN - 978-1-4799-4398-2 U6 - https://doi.org/10.1109/PVSC.2014.6925017 SP - 698 EP - 700 PB - IEEE CY - Piscataway, NJ ER -