TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10289036 VL - 2023 SP - 297 EP - 300 ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288955 SP - 1 EP - 4 ER - TY - GEN A1 - Yazdani, Hossein A1 - Beleniotis, Petros A1 - Brunner, Frank A1 - Ostermay, Ina A1 - Würfl, Joachim A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang A1 - Hilt, Oliver T1 - K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance T2 - Physica Status Solidi Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202400592 ER - TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Zervos, Christos A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - GaN trap model extraction based on MHz load-line measurements T2 - 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025 N2 - The extraction of model parameters for GaN HEMTs is a challenging task that typically requires a comprehensive series of pulsed measurements to ensure that the resulting model is both accurate and convergence-stable. This study introduces, for the first time, an extraction procedure that utilizes I-V curves generated by MHz load-line measurements, effectively replacing the complex and time-intensive pulsed measurements. A drain-lag model extraction was based on load-line I-V curves and validated along with a pulsed-IV-based model through RF large-signal simulations, demonstrating excellent performance. KW - GaN KW - Compact model KW - Load-line KW - Model parameter extraction Y1 - 2025 SN - 979-8-3315-1409-9 U6 - https://doi.org/10.1109/IMS40360.2025.11104000 SP - 1059 EP - 1062 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Determining GaN HEMT trap models from MHz load-line measurement — synthesis and evaluation T2 - 2025 16th German Microwave Conference (GeMiC) N2 - The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology. KW - Compact modeling KW - Load-line KW - Model parameter extraction KW - GaN HEMT KW - ASM-HEMT Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10978988 SP - 451 EP - 454 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Traps in GaN HEMTs : from characterization to model development and device optimization T2 - 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) N2 - This paper reviews a comprehensive strategy designed to address the impact of traps across the entire field of GaN HEMT operation. It begins with the characterization of trap levels and the measurement of trap time constants. The study then progresses to TCAD simulations to examine the location of the observed trap levels and their effect on device performance. Finally, it introduces the development of a compact trap model grounded in Shockley-Read-Hall statistics. The proposed model is capable of accurately predicting trapping effects across all combinations of voltage, temperature, and time. The paper concludes by highlighting the synergy TCAD-compact-model, underscoring its utility in device optimization schemes. KW - GaN KW - Traps KW - Microwave KW - TCAD KW - ASM-HEMT Y1 - 2025 SN - 979-8-3315-9172-4 U6 - https://doi.org/10.1109/BCICTS63111.2025.11211504 SP - 1 EP - 8 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Beleniotis, Petros A1 - Hoffmann, Thomas A1 - Yazdani, Hossein A1 - Wentzel, Andreas A1 - Rudolph, Matthias T1 - Switch-integrated GaN LNAs : a technology-focused analysis T2 - 2025 20th European Microwave Integrated Circuits Conference (EuMIC) N2 - This paper presents the first circuit-level analysis of a two-stage GaN-HEMT LNA with an integrated switch, comparing two distinct technologies: one with a standard passivation layer (Type A) and another featuring an advanced passivation layer (Type B). Through a detailed evaluation of their performance in both amplification and isolation modes, the study highlights Type B as a significant advancement over Type A. Leveraging technological enhancements, including an improved passivation layer and slightly optimized component matching, Type B demonstrates superior performance. The results are compelling, with Type B achieving a gain of 19 dB, a low noise figure of 1.17dB, and small-signal isolation exceeding 30 dBm at 5.2 GHz. These achievements establish Type B as a formidable option for future 5G telecommunication systems, offering a performance that challenges traditional designs that use separate switches. Y1 - 2025 SN - 978-2-87487-082-8 U6 - https://doi.org/10.23919/EuMIC65284.2025.11234676 SP - 29 EP - 32 PB - IEEE CY - Piscataway, NJ ER -