TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Determining GaN HEMT trap models from MHz load-line measurement — synthesis and evaluation T2 - 2025 16th German Microwave Conference (GeMiC) N2 - The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology. KW - Compact modeling KW - Load-line KW - Model parameter extraction KW - GaN HEMT KW - ASM-HEMT Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10978988 SP - 451 EP - 454 PB - IEEE CY - Piscataway, NJ ER -