TY - GEN A1 - Bär, Marcus A1 - Klaer, Joachim A1 - Duarte, Roberto Felix A1 - Barreau, Nicolas A1 - Weinhardt, Lothar A1 - Wilks, Regan G. A1 - Heske, Clemens A1 - Schock, Hans-Werner T1 - Surface Off-Stoichiometry of CuInS2 Thin-Film Solar Cell Absorbers T2 - IEEE Journal of Photovoltaics N2 - In this paper, X-ray photoelectron and X-ray-excited Auger electron spectroscopy was used to investigate the chemical surface structure of CuInS2 thin-film solar cell absorbers.We find that the [In]/[Cu] surface composition can vary between 1.6 (±0.4) and 3.7 (±0.7), depending on relatively minor variations in the absorber formation process and/or whether additional wet-chemical treatments are performed. These variations are primarily due to differences in the Cu surface concentration. The corresponding change of the modified In Auger parameter is interpreted as being indicative of a change in the chemical environment of In as a function of Cu off-stoichiometry. Y1 - 2013 UR - https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6380521 SN - 2156-3381 VL - 3 IS - 2 SP - 828 EP - 832 ER - TY - GEN A1 - Bär, Marcus A1 - Barreau, Nicolas A1 - Couzinié-Devy, François A1 - Weinhardt, Lothar A1 - Wilks, Regan G. A1 - Kessler, John A1 - Heske, Clemens T1 - Impact of annealing-induced intermixing on the electronic level alignment at the In₂S₃/Cu(In,Ga)Se₂ thin-film solar cell interface T2 - ACS Applied Materials & Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.5b10614 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 3 SP - 2120 EP - 2124 ER -