TY - PAT A1 - Augel, Lion A1 - Knobbe, Jens T1 - Vorrichtung und Verfahren zur Absorption von elektromagnetischer Strahlung, System zur Verwendung in einem Bildsensor, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung Y1 - 2023 UR - https://register.dpma.de/DPMAregister/pat/register?AKZ=1020212137474 ER - TY - PAT A1 - Augel, Lion A1 - Knobbe, Jens T1 - Vorrichtung, Verfahren und System zur Absorption von elektromagnetischer Strahlung, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung Y1 - 2023 UR - https://register.dpma.de/DPMAregister/pat/register?AKZ=1020212137466 ER - TY - GEN A1 - Berkmann, Fritz A1 - Augel, Lion A1 - Hack, Michael A1 - Kawaguchi, Yuma A1 - Weißhaupt, David A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann T2 - IEEE Photonics Journal KW - Sensors KW - Refractive index KW - Optical variables control KW - Optical refraction KW - Optical device fabrication KW - Germanium KW - Solid modeling Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9781306 U6 - https://doi.org/10.1109/JPHOT.2022.3177354 SN - 1943-0655 VL - 14 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Berkmann, Fritz A1 - Kawaguchi, Yuma A1 - Schlipf, Jon A1 - Schulze, Jörg T1 - Plasmonics-Integrated Ge PIN-Photodetectors T2 - ECS Transactions Y1 - 2019 U6 - https://doi.org/10.1149/09301.0041ecst SN - 1938-5862 SN - 1938-6737 VL - 93 IS - 1 SP - 41 EP - 44 ER - TY - GEN A1 - Augel, Lion A1 - Schlipf, Jon A1 - Bullert, Sergej A1 - Bürzele, Sebastian A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes T2 - Scientific Reports N2 - Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing. Y1 - 2021 U6 - https://doi.org/10.1038/s41598-021-85012-z SN - 2045-2322 IS - 11 ER - TY - GEN A1 - Wen, Hanying A1 - Augel, Lion A1 - Wang, Wenjuan A1 - Knobbe, Jens T1 - Characterization of AlSiCu/TiN/p-Si Schottky Contacts with Nanophotonic Structures for Near-infrared Photodetectors T2 - 2023 46th International Spring Seminar on Electronics Technology (ISSE) : 10-14 May 2023 : conference location: Timișoara, Romania N2 - Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling. Y1 - 2023 UR - https://ieeexplore.ieee.org/document/10168510 SN - 979-8-3503-3485-2 SN - 979-8-3503-3484-5 U6 - https://doi.org/10.1109/ISSE57496.2023.10168510 SP - 1 EP - 5 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Augel, Lion A1 - Wen, Hanying A1 - Knobbe, Jens T1 - TiN-Si Schottky Diodes for SWIR Detection T2 - Tagungsband MikroSystemTechnik Kongress 2023, Dresden, 23. - 25. Oktober 2023 Y1 - 2023 SN - 978-3-8007-6204-0 SN - 978-3-8007-6203-3 SP - 30 EP - 34 PB - VDE Verlag CY - Berlin ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Körner, Roman A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Bechler, Stefan A1 - Hänel, Linda A. A1 - Kern, Michael A1 - Oehme, Michael A1 - Rolseth, Erlend Granbo A1 - Schwartz, Bernhard A1 - Weißhaupt, David A1 - Zhang, Wogong A1 - Schulze, Jörg T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016 Y1 - 2016 SN - 978-1-5090-3901-2 SN - 978-1-5090-3902-9 SP - 22.5.1 EP - 22.5.4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Augel, Lion A1 - Fischer, Inga Anita A1 - Gollhofer, Martin A1 - Oehme, Michael A1 - Schulze, Jörg T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas T2 - Journal of Applied Physics Y1 - 2020 U6 - https://doi.org/10.1063/5.0012279 SN - 1089-7550 VL - 128 IS - 1 SP - 013105-1 EP - 013105-8 ER -