TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - Highly Linear Broadband GaN-based Low-noise Amplifier Y1 - 2010 ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Properties of GaN LNAs for Front-End Applications T2 - WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019 Y1 - 2019 UR - https://www.b-tu.de/en/endowed-chair-rf-and-microwave-techniques/publications/publications#c208430 ER - TY - GEN A1 - Fischer, Thomas A1 - Marchetti-Deschmann, Martina A1 - Assis, Ana Cristina A1 - Elad, Michal Levin A1 - Algarra, Manuel A1 - Barac, Marko A1 - Bogdanovic Radovic, Iva A1 - Cicconi, Flavio A1 - Claes, Britt A1 - Frascione, Nunzianda A1 - George, Sony A1 - Guedes, Alexandra A1 - Heaton, Cameron A1 - Heeren, Ron A1 - Lasic, Violeta A1 - Lerma, José Luis A1 - del Valle Martinez de Yuso Garcia, Maria A1 - Nosko, Martin A1 - O'Hara, John A1 - Oshina, Ilze A1 - Palucci, Antonio A1 - Pawlaczyk, Aleksandra A1 - Pospíšková, Kristýna A1 - de Puit, Marcel A1 - Radodic, Ksenija A1 - Rēpele, Māra A1 - Ristova, Mimoza A1 - Romolo, Francesco Saverio A1 - Šafařík, Ivo A1 - Siketic, Zdravko A1 - Spigulis, Janis A1 - Szynkowska-Jozwik, Malgorzata Iwona A1 - Tsiatsiuyeu, Andrei A1 - Vella, Joanna A1 - Dawson, Lorna A1 - Rödiger, Stefan A1 - Francese, Simona T1 - Profiling and imaging of forensic evidence – A pan-European forensic round robin study part 1: Document forgery T2 - Science & Justice Y1 - 2022 U6 - https://doi.org/10.1016/j.scijus.2022.06.001 SN - 1876-4452 SN - 1355-0306 VL - 62 IS - 4 SP - 433 EP - 447 ER - TY - GEN A1 - Haque, Sanaul A1 - Andrei, Cristina A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288728 ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications T2 - IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015 Y1 - 2015 U6 - https://doi.org/10.1109/MWSYM.2015.7166766 PB - IEEE ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive T2 - Proceedings of 45th European Microwave Conference, Paris 2015 Y1 - 2015 U6 - https://doi.org/10.1109/EuMC.2015.7345742 SP - 231 EP - 234 PB - IEEE ER - TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288650 SP - 9 EP - 12 ER - TY - GEN A1 - Tomaz, Antonio A1 - Gerlich, Stefan A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers T2 - 2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022 N2 - A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup. Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9783536 SN - 978-3-9820397-2-5 SN - 2167-8022 SP - 65 EP - 68 PB - IEEE ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER -