TY - RPRT
A1 - Hollweg, Heinz-Dieter
A1 - Böhm, Uwe
A1 - Fast, Irina
A1 - Hennemuth, Barbara
A1 - Keuler, Klaus
A1 - Keup-Thiel, Elke
A1 - Lautenschlager, Michael
A1 - Legutke, Stephanie
A1 - Radtke, Kai
A1 - Rockel, Burkhardt
A1 - Schubert, Martina
A1 - Will, Andreas
A1 - Woldt, Michael
A1 - Wunram, Claudia
T1 - Ensemble Simulations over Europe with the Regional Climate Model CLM forced with IPCC AR4 Global Scenarios
N2 - Regional climate projections have been performed for Europe with the climate version CLM (version 3.1) of the 'Lokal-Modell' (LM) of the German Meteorological Service. CLM has been forced with output of the ECHAM5/MPIOM global climate model of the Max Planck Institute for Meteorology, which contributed to the fourth climate assessment report (AR4) of the International Panel on Climate Change (IPCC). The results of the global model for the IPCC A1B and B1 scenarios as well as the reconstruction of the last four decades of the 20th century (20C3M) for the AR4 are dynamically scaled down to the CLM grid cell size of about 18×18 km2. Climatological parameters including all model variables and additional quantities characterising the climate are available from the World Data Centre for Climate database run by the German climate service group Model and Data. They can be accessed by the general public at no costs with the help of M and D. In particular, the 'Service Group Adaptation' (SGA) has been established at M and D to assist adaptation projects funded by the German Federal Ministry of Education and Research (BMBF) giving advice on the interpretation of the CLM model results.
Y1 - 2008
UR - https://cera-www.dkrz.de/WDCC/ui/cerasearch/entry?acronym=MaD_TeReport_No03
U6 - https://doi.org/10.2312/WDCC/MaD_TeReport_No03
PB - Max-Planck-Institut für Meteorologie
CY - Hamburg
ER -
TY - GEN
A1 - Franck, Max
A1 - Dabrowski, Jaroslaw
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Lukosius, Mindaugas
T1 - Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
T2 - Nanomaterials
N2 - The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth
KW - Boron nitride
KW - 2d materials
KW - Chemical vapour deposition
Y1 - 2022
U6 - https://doi.org/10.3390/nano12193260
SN - 2079-4991
VL - 12
IS - 19
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Hayat, Ahsan
A1 - Ratzke, Markus
A1 - Alvarado Chavarin, Carlos
A1 - Zöllner, Marvin Hartwig
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration
T2 - Thin Solid Films
Y1 - 2024
U6 - https://doi.org/10.1016/j.tsf.2024.140547
SN - 0040-6090
VL - 807
ER -
TY - GEN
A1 - Fritscher, Markus
A1 - Uhlmann, Max
A1 - Ostrovskyy, Philip
A1 - Reiser, Daniel
A1 - Chen, Junchao
A1 - Schubert, Andreas
A1 - Schulze, Carsten
A1 - Kahmen, Gerhard
A1 - Fey, Dietmar
A1 - Reichenbach, Marc
A1 - Krstic, Milos
A1 - Wenger, Christian
T1 - Area-efficient digital design using RRAM-CMOS standard cells
T2 - 2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
N2 - Extending the scalability of digital integrated circuits through novel device concepts is an attractive option. Among these concepts, resistive random access memory (RRAM) devices allow fast and nonvolatile operation. However, building large memristive systems is still challenging since large analog circuits have to be designed and integrated. In this paper, we propose a novel solution - the implementation of digital standard cells by the means of RRAM devices. While this methodology is universal, with applications ranging from few-device-circuits to large macroblocks, we demonstrate it for a 2T2R-cell. The benefits of using RRAM devices are demonstrated by implementing a NAND standard cell merely consuming the area of two transistors. This cell is about 25 % smaller than the equivalent CMOS NAND in the same technology. We use these cells to implement a half adder, beating the area of the equivalent CMOS implementation using more sophisticates gates by 15 %. Lastly, we fully integrate this novel standard cell into a digital standard cell library and perform a synthesis and layout of a RISC-V CPU core.
KW - RRAM
Y1 - 2024
SN - 979-8-3503-5411-9
SN - 979-8-3503-5412-6
U6 - https://doi.org/10.1109/ISVLSI61997.2024.00026
SN - 2159-3477
VL - 18
SP - 81
EP - 87
PB - IEEE
ER -
TY - GEN
A1 - Reiter, Sebastian
A1 - Han, Weijia
A1 - Mai, Christian
A1 - Spirito, Davide
A1 - Jose, Josmy
A1 - Zöllner, Marvin Hartwig
A1 - Fursenko, Oksana
A1 - Schubert, Markus Andreas
A1 - Stemmler, Ivo
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Titanium Nitride Plasmonic Nanohole Arrays for CMOS-compatible integrated refractive index sensing: influence of layer thickness on optical properties
T2 - Plasmonics
Y1 - 2023
U6 - https://doi.org/10.1007/s11468-023-01810-3
SN - 1557-1963
SP - 1
EP - 13
ER -
TY - GEN
A1 - Hayat, Ahsan
A1 - Spirito, Davide
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Schubert, Markus Andreas
A1 - Masood, Maria
A1 - Reichmann, Felix
A1 - Ratzke, Markus
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates
T2 - Materials Science in Semiconductor Processing
Y1 - 2023
U6 - https://doi.org/10.1016/j.mssp.2023.107693
SN - 1873-4081
VL - 165
ER -
TY - GEN
A1 - Uhlmann, Max
A1 - Pérez-Bosch Quesada, Emilio
A1 - Fritscher, Markus
A1 - Pérez, Eduardo
A1 - Schubert, Markus Andreas
A1 - Reichenbach, Marc
A1 - Ostrovskyy, Philip
A1 - Wenger, Christian
A1 - Kahmen, Gerhard
T1 - One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing
T2 - 21st IEEE Interregional NEWCAS Conference (NEWCAS)
N2 - The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.
KW - RRAM
KW - In-Memory Computing
Y1 - 2023
SN - 979-8-3503-0024-6
SN - 979-8-3503-0025-3
U6 - https://doi.org/10.1109/NEWCAS57931.2023.10198073
SN - 2474-9672
SN - 2472-467X
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
TY - GEN
A1 - Morales, Carlos
A1 - Mahmoodinezhad, Ali
A1 - Tschammer, Rudi
A1 - Kosto, Yuliia
A1 - Alvarado Chavarin, Carlos
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Henkel, Karsten
A1 - Flege, Jan Ingo
T1 - Combination of Multiple Operando and In-Situ Characterization Techniques in a Single Cluster System for Atomic Layer Deposition: Unraveling the Early Stages of Growth of Ultrathin Al2O3 Films on Metallic Ti Substrates
T2 - Inorganics
N2 - This work presents a new ultra-high vacuum cluster tool to perform systematic studies of the early growth stages of atomic layer deposited (ALD) ultrathin films following a surface science approach. By combining operando (spectroscopic ellipsometry and quadrupole mass spectrometry) and in situ (X-ray photoelectron spectroscopy) characterization techniques, the cluster allows us to follow the evolution of substrate, film, and reaction intermediates as a function of the total number of ALD cycles, as well as perform a constant diagnosis and evaluation of the ALD process, detecting possible malfunctions that could affect the growth, reproducibility, and conclusions derived from data analysis. The homemade ALD reactor allows the use of multiple precursors and oxidants and its operation under pump and flow-type modes. To illustrate our experimental approach, we revisit the well-known thermal ALD growth of Al2O3 using trimethylaluminum and water. We deeply discuss the role of the metallic Ti thin film substrate at room temperature and 200 °C, highlighting the differences between the heterodeposition (<10 cycles) and the homodeposition (>10 cycles) growth regimes at both conditions. This surface science approach will benefit our understanding of the ALD process, paving the way toward more efficient and controllable manufacturing processes.
KW - Atomic layer deposition (ALD)
KW - in-situ
KW - operando
KW - X-ray photoelectron spectroscopy
KW - ellipsometry
KW - quadrupol mass spectrometry (QMS)
Y1 - 2023
U6 - https://doi.org/10.3390/inorganics11120477
SN - 2304-6740
VL - 11
IS - 12
ER -
TY - GEN
A1 - Perez-Bosch Quesada, Emilio
A1 - Rizzi, Tommaso
A1 - Gupta, Aditya
A1 - Mahadevaiah, Mamathamba Kalishettyhalli
A1 - Schubert, Andreas
A1 - Pechmann, Stefan
A1 - Jia, Ruolan
A1 - Uhlmann, Max
A1 - Hagelauer, Amelie
A1 - Wenger, Christian
A1 - Pérez, Eduardo
T1 - Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing
T2 - 14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023
N2 - This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.
Index Terms—radiation-hard, hardness-by-design, memristive
devices, Enclosed Layout Transistor, in-memory computing
KW - RRAM
Y1 - 2023
SN - 979-8-3503-0240-0
U6 - https://doi.org/10.1109/CDE58627.2023.10339525
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -