TY - CHAP A1 - Ellinger, Frank A1 - Meister, Tilo A1 - Grosa, Patrick A1 - Jamshidi, Kambiz A1 - Ihle, David A1 - Franchi, Norman A1 - Wagner, Jens A1 - Richter, Andreas A1 - Fettweis, Gerhard A1 - Fitzek, Frank A1 - Kreissig, Martin A1 - Klessig, Henrik A1 - Kraemer, Rolf A1 - Richter, Klaus A1 - Frotzscher, Andreas A1 - Löhr, Robert A1 - Winkler, Wolfgang A1 - Zoeke, Dominik A1 - Carot, Alexander A1 - Bluschke, Andreas T1 - Project FAST - Fast Actuators Sensors & Transceivers T2 - Microwave Conference (LAMC), IEEE MTT-S Latin America, 12-14 Dec. 2016 Puerto Vallarta, Mexico Y1 - 2016 SN - 978-1-5090-4287-6 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Beblik, Andreas J. A1 - Richter, G. M. A1 - Schmalstieg, K. A1 - Richter, O. T1 - N-dynamics and nitrate leaching under rotational and continuous set-aside - a case study at the field and catchment scale Y1 - 1998 ER - TY - CHAP A1 - Bilz, Ludwig A1 - Sudeck, Gorden A1 - Bucksch, Jens A1 - Klocke, Andreas A1 - Kolip, Petra A1 - Melzer, Wolfgang A1 - Ravens-Sieberer, Ulrike A1 - Richter, Matthias ED - Bilz, Ludwig ED - Sudeck, Gorden ED - Bucksch, Jens ED - Klocke, Andreas ED - Kolip, Petra ED - Melzer, Wolfgang ED - Ravens-Sieberer, Ulrike ED - Richter, Matthias T1 - Der vierte deutsche Jugendgesundheitssurvey „Health Behaviour in School-aged Children“ T2 - Schule und Gesundheit : Ergebnisse des WHO-Jugendgesundheitssurveys "Health behaviour in school-aged children" Y1 - 2016 SN - 978-3-7799-1991-9 SP - 7 EP - 15 PB - Beltz Juventa CY - Weinheim ER - TY - GEN A1 - Strobel, Carsten A1 - Alvarado Chavarin, Carlos A1 - Richter, Karola A1 - Knaut, Martin A1 - Reif, Johanna A1 - Völkel, Sandra A1 - Jahn, Andreas A1 - Albert, Matthias A1 - Wenger, Christian A1 - Kirchner, Robert A1 - Bartha, Johann Wolfgang A1 - Mikolajick, Thomas T1 - Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain T2 - ACS Applied Materials & Interfaces N2 - A graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal−insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon−graphene−germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality was demonstrated. Additionally, a capacitance model is applied to predict the theoretical device performance resulting in an on−off ratio above 106, a swing of 87 mV/dec, and a drivecurrent of about 1 × 106 A/cm2. KW - Graphene KW - Transistor Y1 - 2022 U6 - https://doi.org/10.1021/acsami.2c10634 SN - 1944-8244 SN - 1944-8252 VL - 14 IS - 34 SP - 39249 EP - 39254 ER -