<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>10365</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>484</pageFirst>
    <pageLast>487</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Towards a Large-Signal Noise Model for GaN HEMT Devices</title>
    <parentTitle language="eng">Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Rudolph</lastName>
    </author>
    <submitter>
      <firstName>Antina</firstName>
      <lastName>Schmidt</lastName>
    </submitter>
    <author>
      <firstName>Ralf</firstName>
      <lastName>Dörner</lastName>
    </author>
    <collection role="old_institute" number="03045">Ulrich-Rohde-Stiftungsprofessur für Hochfrequenz- und Mikrowellentechnik</collection>
    <collection role="institutes" number="1121">Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik</collection>
  </doc>
</export-example>
