<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>13792</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 243</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Band gap determination of thin Praseodymiumoxide layers on Aluminiumoxynitride films</title>
    <abstract language="eng">High-k dielectrics are important as never bevore in semiconductor industry. We investigate Pr2O3 as one representative of this group on Silicon and Silicon-Aluminium oxynitride substrates. In earlier work we observed the positive influence of this AlOxNy intermediate layer on the electrical properties of the Pr2O3 layer. Now we present in-situ EELS, XPS and UPS measurements of gradually grown thin Pr2O3 on AlOxNy. From these measurements we determine the band structure and find a very fast change of the band gap for the first few Ångström, coupled with n-type behaviour for the Pr2O3 film. These results are compared with RIXS measurements of a 5 nm Pr2O3 on a 1 nm thick AlOxNy layer.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/ds/session/23/contribution/4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Bergholz</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
