<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1809</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>561</pageFirst>
    <pageLast>564</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2004-04-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output</title>
    <parentTitle language="eng">Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003</parentTitle>
    <identifier type="isbn">0-7803-7995-0</identifier>
    <enrichment key="UBICOIdent">002200</enrichment>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <author>
      <firstName>A. L.</firstName>
      <lastName>Scholtz</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Thüringer</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1811</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IMAPS</publisherName>
    <publisherPlace>Washington, DC</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2004-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A 5 to 6.5 GHz LTCC Power Amplifier Module</title>
    <parentTitle language="eng">Proceedings of the  36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE</parentTitle>
    <identifier type="isbn">0-930815-71-8</identifier>
    <enrichment key="UBICOIdent">002202</enrichment>
    <author>
      <firstName>N.</firstName>
      <lastName>Ilkov</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>O.</firstName>
      <lastName>Dernovsek</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Matz</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1812</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>61</pageFirst>
    <pageLast>66</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Operations Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2004-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar</title>
    <parentTitle language="eng">Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE</parentTitle>
    <identifier type="isbn">0-7803-7800-8</identifier>
    <enrichment key="UBICOIdent">002203</enrichment>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>A. L.</firstName>
      <lastName>Scholtz</lastName>
    </author>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Thüringer</lastName>
    </author>
    <author>
      <firstName>H.-D.</firstName>
      <lastName>Wohlmuth</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1813</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2004-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">60GHz and 76GHz Oscillators in µm SiGe:C BiCMOS</title>
    <enrichment key="UBICOIdent">002204</enrichment>
    <enrichment key="UBICOquelle">Digest of technical papers / 2003 IEEE International Solid-State Circuits Conference, ISSCC : [February, 9, 10, 11, 12, and 13, 2003, San Francisco, California],  Piscataway, NJ : IEEE Service Center, 2003, [Hauptbd.], S. 454 - 507, 0-7803-7707-9</enrichment>
    <author>
      <firstName>W.</firstName>
      <lastName>Winkler</lastName>
    </author>
    <contributor>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </contributor>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>J.</firstName>
      <lastName>Borngräber</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Heinemann</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1814</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2004-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A 5-6.5GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar</title>
    <enrichment key="UBICOIdent">002205</enrichment>
    <enrichment key="UBICOquelle">Electronics Letters 39(2003)4, S. 375-376, 0013-5194</enrichment>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>N.</firstName>
      <lastName>Ilkov</lastName>
    </author>
    <author>
      <firstName>A. L.</firstName>
      <lastName>Scholtz</lastName>
    </author>
    <author>
      <firstName>N.</firstName>
      <lastName>Dernovsek</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Matz</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1950</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-05-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output</title>
    <enrichment key="UBICOIdent">002370</enrichment>
    <enrichment key="UBICOquelle">IEEE journal of solid state circuits 39(2004)7, S.1006-1014, 0018-9200</enrichment>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1948</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-05-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A 0.35µm CMOS 1.9mA VCO-Core with Off-Chip Inductance on LTCC for System-in-a-Package Solutions of a 5-GHz-WLAN Transceiver</title>
    <enrichment key="UBICOIdent">002368</enrichment>
    <enrichment key="UBICOquelle">Proceedings / ProRISC 2003, 14th Annual Workshop, Veldhoven, Netherlands, 2003, S. 240-243, 90-73461-39-1</enrichment>
    <author>
      <firstName>S.</firstName>
      <lastName>Mecking</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Wojciech Andrzej</firstName>
      <lastName>Debski</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>1949</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-05-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply</title>
    <enrichment key="UBICOIdent">002369</enrichment>
    <enrichment key="UBICOquelle">Conference Proceedings / 14th International Crimean Conference Microwave &amp; Telecommunication Technology : September 13 - 17, 2004, Sevastopol, Crimea, Ukraine, 2004, S. 98-99, 966-796869-3</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>2630</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer</title>
    <enrichment key="UBICOIdent">003164</enrichment>
    <enrichment key="UBICOquelle">Electronic letters 41(2005)16, S. 35-36, 0013-5194</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>2707</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IMAPS Deutschland</publisherName>
    <publisherPlace>München</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Keramische System-in-Package-Technologie für 5GHz-Transceivermodul</title>
    <parentTitle language="eng">Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, München</parentTitle>
    <note>CD-ROM</note>
    <enrichment key="UBICOIdent">003275</enrichment>
    <author>
      <firstName>Wojciech Andrzej</firstName>
      <lastName>Debski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>U.</firstName>
      <lastName>Langmann</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Mayr</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Matz</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>2708</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1427</pageFirst>
    <pageLast>1431</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Horizon House Publ.</publisherName>
    <publisherPlace>London</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching</title>
    <parentTitle language="eng">Conference proceedings, 35th European Microwave Conference, Tuesday 4th, Wednesday 5th and Thursday 6th October 2005, Paris, France, part of 8th European Microwave Week (EuMW)], Bd. 3</parentTitle>
    <enrichment key="UBICOIdent">003276</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Käll</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <author>
      <firstName>Alfons</firstName>
      <lastName>Schmid</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Kitlinski</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>2709</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultra broadband 20.5-31 GHz monolithically integrated CMOS power amplifier</title>
    <enrichment key="UBICOIdent">003277</enrichment>
    <enrichment key="UBICOquelle">IEE electronic letters 41(2005)23, S. 1281-1282, 0013-5194</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <author>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>2710</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">17 GHz 50-60 mW Power Amplifiers in 0.13 um standard CMOS</title>
    <enrichment key="UBICOIdent">003278</enrichment>
    <enrichment key="UBICOquelle">IEEE microwave and wireless components letters 16(2006)1, S. 37-39, 1051-8207</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <contributor>
      <firstName>Werner</firstName>
      <lastName>Simbürger</lastName>
    </contributor>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <author>
      <firstName>Winfried</firstName>
      <lastName>Bakalski</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3221</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-12-12</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">11 GHz CMOS frequency synthesiser</title>
    <enrichment key="UBICOIdent">003862</enrichment>
    <enrichment key="UBICOquelle">Electronic letters 42(2006)21, S. 1199-2000, 0013-5194</enrichment>
    <author>
      <firstName>Valentyn A.</firstName>
      <lastName>Solomko</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3299</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Integrated RF power amplifier design in silicon based technologies</title>
    <identifier type="urn">urn:nbn:de:kobv:co1-opus-202</identifier>
    <enrichment key="UBICOIdent">003974</enrichment>
    <author>
      <firstName>Andriy</firstName>
      <lastName>Vasylyev</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Siliciumbauelement</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Radiofrequenzbereich</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Verstärker</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Leistungsverstärker</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>CMOS</value>
    </subject>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3603</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-06-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">5-6 GHz Low-Power, High Linearity Differential CMOS LNA with Robust ESD Protection</title>
    <enrichment key="UBICOIdent">004304</enrichment>
    <enrichment key="UBICOquelle">Frequenz : journal of RF-engineering and telecommunications 61(2007)5-6, S. 110-112, 0016-1136</enrichment>
    <author>
      <firstName>Wojciech Andrzej</firstName>
      <lastName>Debski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3711</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-10-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Multi-band adaptive WLAN receivers in 0.13 µm CMOS</title>
    <identifier type="urn">urn:nbn:de:kobv:co1-opus-3689</identifier>
    <enrichment key="UBICOIdent">004436</enrichment>
    <author>
      <firstName>Wojciech Andrzej</firstName>
      <lastName>Debski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Drahtloses lokales Netz</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>CMOS-Schaltung</value>
    </subject>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3708</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-09-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Monolithically Integrated 23-24 GHz Tuned Down-Converter in 0.13 µm CMOS</title>
    <enrichment key="UBICOIdent">004433</enrichment>
    <enrichment key="UBICOquelle">Frequenz : journal of RF-engineering and telecommunications 61(2007)7-8, S. 178-181, 0016-1136</enrichment>
    <author>
      <firstName>Wojciech Andrzej</firstName>
      <lastName>Debski</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>3852</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2008-08-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Monolithically integrated Sigma-Delta Frequency Synthesizers in 0.13 µm CMOS</title>
    <identifier type="urn">urn:nbn:de:kobv:co1-opus-4656</identifier>
    <enrichment key="UBICOIdent">004584</enrichment>
    <author>
      <firstName>Valentyn A.</firstName>
      <lastName>Solomko</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Integrierte Schaltung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Frequenzsynthese</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>CMOS-Schaltung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Sigma-Delta-Wandler</value>
    </subject>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>4092</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2008-12-12</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Monolithically integrated ?? frequency synthesiser with distributed reference spurs</title>
    <enrichment key="UBICOIdent">004841</enrichment>
    <enrichment key="UBICOquelle">IET circuits, devices and systems 2(2008)6, S. 527-536, 1751-858X</enrichment>
    <author>
      <firstName>Valentyn A.</firstName>
      <lastName>Solomko</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>4247</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2009-10-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Fully Integrated 3.3-3.8-GHz Power Amplifier With Autotransformer Balun</title>
    <enrichment key="UBICOIdent">005021</enrichment>
    <enrichment key="UBICOquelle">IEEE Transactions on Microwave Theory and Techniques  57(2009)9, S. 2160-2172, 0018-9480</enrichment>
    <author>
      <firstName>Valentyn A.</firstName>
      <lastName>Solomko</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>7837</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>4</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2012-04-12</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fully monolithically integrated X-band power amplifier without external matching</title>
    <parentTitle language="eng">Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology</parentTitle>
    <identifier type="isbn">978-1-424-47905-4</identifier>
    <enrichment key="UBICOIdent">009135</enrichment>
    <author>
      <firstName>Ievgenii</firstName>
      <lastName>Meshcheriakov</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Valentyn A.</firstName>
      <lastName>Solomko</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>8275</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>183</pageFirst>
    <pageLast>188</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7-8</issue>
    <volume>66</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2012-11-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Narrow-band 8.7 GHz SiGe HBT LNA with a Passive Frequency Selective Feedback</title>
    <abstract language="eng">This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved.</abstract>
    <parentTitle language="eng">Frequenz</parentTitle>
    <identifier type="doi">10.1515/freq-2012-0037</identifier>
    <identifier type="issn">0016-1136</identifier>
    <identifier type="issn">2191-6349</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Gerlich</lastName>
    </author>
    <submitter>
      <firstName>Stefan</firstName>
      <lastName>Gerlich</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LNA</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Radiofrequency Integrated Circuits</value>
    </subject>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>9489</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>121</pageFirst>
    <pageLast>124</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-09-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications</title>
    <abstract language="eng">A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.</abstract>
    <parentTitle language="eng">Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011</parentTitle>
    <identifier type="doi">10.1109/SIRF.2011.5719310</identifier>
    <identifier type="isbn">978-1-4244-8060-9</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wipf</lastName>
    </author>
    <submitter>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </submitter>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>10044</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>539</pageFirst>
    <pageLast>541</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>23</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-11-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Highly Efﬁcient Packaged 11-13 GHz Power Ampliﬁer in SiGe-Technology With 37.3% of PAE</title>
    <abstract language="eng">A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.</abstract>
    <parentTitle language="eng">IEEE Microwave and Wireless Components Letters</parentTitle>
    <identifier type="doi">10.1109/LMWC.2013.2278285</identifier>
    <identifier type="issn">1531-1309</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Gerlich</lastName>
    </author>
    <submitter>
      <firstName>Stefan</firstName>
      <lastName>Gerlich</lastName>
    </submitter>
    <author>
      <firstName>Peter</firstName>
      <lastName>Weger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power amplifier</value>
    </subject>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14110</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>022108</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>105</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>HZB Berlin, IHP, Green Energy an Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.4890625</identifier>
    <identifier type="issn">1077-3118</identifier>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>S.</firstName>
      <lastName>Steffens</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>C.</firstName>
      <lastName>Becker</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Amkreutz</lastName>
    </author>
    <author>
      <firstName>André</firstName>
      <lastName>Klossek</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Y.-Y.</firstName>
      <lastName>Chen</lastName>
    </author>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Schnegg</lastName>
    </author>
    <author>
      <firstName>Max</firstName>
      <lastName>Klingsporn</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Abou-Ras</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Lips</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Rech</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14098</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace>Melville, New York</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IHP, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Carrier Transport on Dislocations</title>
    <parentTitle language="eng">International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013</parentTitle>
    <identifier type="doi">10.1063/1.4865599</identifier>
    <identifier type="isbn">978-0-7354-1215-6</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">33</enrichment>
    <enrichment key="UBICOseries">AIP conference proceedings ; 1583,1</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <editor>
      <firstName>Anna</firstName>
      <lastName>Cavallini</lastName>
    </editor>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <editor>
      <firstName>Stefan K.</firstName>
      <lastName>Estreicher</lastName>
    </editor>
    <author>
      <firstName>M.</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14099</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>14</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IHP, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dislocations as Native Nanostructures - Electronic Properties</title>
    <parentTitle language="eng">Advances in Nano Research</parentTitle>
    <identifier type="doi">10.12989/anr.2014.2.1.001</identifier>
    <identifier type="issn">2287-2388</identifier>
    <identifier type="issn">2287-237X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <author>
      <firstName>Sigrid</firstName>
      <lastName>Hopfe</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14100</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>194303</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>19</issue>
    <volume>115</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IHP, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the Electronic Properties of a Single Dislocation</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.4876265</identifier>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Wilfried</firstName>
      <lastName>Erfurth</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <author>
      <firstName>Kornelia</firstName>
      <lastName>Sklarek</lastName>
    </author>
    <author>
      <firstName>Horst</firstName>
      <lastName>Blumtritt</lastName>
    </author>
    <author>
      <firstName>Angelika</firstName>
      <lastName>Haehnel</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14101</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>267</pageFirst>
    <pageLast>281</pageLast>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>64</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IHP, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Single Dislocations as Nanostructure Devices: Physics and Applications</title>
    <parentTitle language="eng">ECS Transactions</parentTitle>
    <identifier type="doi">10.1149/06411.0267ecst</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <author>
      <firstName>Wilfried</firstName>
      <lastName>Erfurth</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14107</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>052024</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>568</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IPHT Jena, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Single-Electron Transitions In One-Dimensional Native Nanostructures</title>
    <parentTitle language="eng">Journal of Physics: Conference Series</parentTitle>
    <identifier type="doi">10.1088/1742-6596/568/5/052024</identifier>
    <identifier type="issn">1742-6588</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schmelz</lastName>
    </author>
    <author>
      <firstName>Ronny</firstName>
      <lastName>Stolz</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Kermann</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Ortlepp</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14108</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>439</pageFirst>
    <pageLast>445</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>251</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MLU Halle, TU Dresden, IHP</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Light Induced Crystallization of an Amorphous Silicon Film Embedded Between Silicon Oxide Layers</title>
    <parentTitle language="eng">Physica Status Solidi B</parentTitle>
    <identifier type="doi">10.1002/pssb.201349143</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Schade</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Teimuraz</firstName>
      <lastName>Mchedlidze</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Hartmut S.</firstName>
      <lastName>Leipner</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14109</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1686</pageFirst>
    <pageLast>1691</pageLast>
    <pageNumber/>
    <edition/>
    <issue>11-12</issue>
    <volume>11</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electroluminescence of Germanium-LEDs on Silicon</title>
    <parentTitle language="eng">Physica Status Solidi C</parentTitle>
    <identifier type="doi">10.1002/pssc.201400056</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Andre</firstName>
      <lastName>Klossek</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14051</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>383</pageFirst>
    <pageLast>393</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Trans Tech Publ.</publisherName>
    <publisherPlace>Durnten-Zurich [u.a.]</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>IHP, IKZ</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Luminescence from Germanium and Germanium on Silicon</title>
    <parentTitle language="eng">Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.205-206.383</identifier>
    <identifier type="issn">1662-9779</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Solid state phenomena ; 205/206</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
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    </author>
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      <lastName>Abrosimov</lastName>
    </author>
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    </author>
    <author>
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      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14052</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>293</pageFirst>
    <pageLast>298</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Trans Tech Publ.</publisherName>
    <publisherPlace>Durnten-Zurich [u.a.]</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>IHP, MPI Halle</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Charge Carrier Transport Along Grain Boundaries in Silicon</title>
    <parentTitle language="eng">Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.205-206.293</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Solid state phenomena ; 205/206</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>Hans-Michael</firstName>
      <lastName>Krause</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14053</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>83</pageFirst>
    <pageLast>88</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Trans Tech Publ.</publisherName>
    <publisherPlace>Durnten-Zurich [u.a.]</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>IHP</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Properties of D3-Like (0,93 eV) Luminescence in Solar Grade Silicon</title>
    <parentTitle language="eng">Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.205-206.83</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Solid state phenomena ; 205/206</enrichment>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Krause</lastName>
    </author>
    <submitter>
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      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
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      <lastName>Mankovics</lastName>
    </author>
    <author>
      <firstName>Hans-Michael</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14054</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>187</pageFirst>
    <pageLast>189</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>26</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, FZ Jülich</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">GeSn Heterojunction LEDs on Si Substrates</title>
    <parentTitle language="eng">IEEE Photonics Technology Letters</parentTitle>
    <identifier type="doi">10.1109/LPT.2013.2291571</identifier>
    <identifier type="issn">1041-1135</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
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      <lastName>Kostecki</lastName>
    </author>
    <author>
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      <lastName>Arguirov</lastName>
    </author>
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      <lastName>Mussler</lastName>
    </author>
    <author>
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      <lastName>Ye</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
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      <lastName>Schmid</lastName>
    </author>
    <author>
      <firstName>Mathias</firstName>
      <lastName>Kaschel</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Dan</firstName>
      <lastName>Buca</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14055</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4711</pageFirst>
    <pageLast>4714</pageLast>
    <pageNumber/>
    <edition/>
    <issue>16</issue>
    <volume>39</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates</title>
    <parentTitle language="eng">Optics Letters</parentTitle>
    <identifier type="doi">10.1364/OL.39.004711</identifier>
    <identifier type="issn">1539-4794</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Widmann</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Bechler</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14056</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4S, 04EC03</issue>
    <volume>53</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, MPI Halle, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors</title>
    <parentTitle language="eng">Japanese Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.7567/JJAP.53.04EC03</identifier>
    <identifier type="issn">1347-4065</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14962</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>International Society for Optics and Photonics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers</title>
    <parentTitle language="eng">Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States</parentTitle>
    <identifier type="doi">10.1117/12.2080816</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Proceedings of SPIE ; 9367</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14963</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3209</pageFirst>
    <pageLast>3212</pageLast>
    <pageNumber/>
    <edition/>
    <issue>13</issue>
    <volume>40</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart, HU Berlin, Max-Born-Institut Berlin</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electroluminescence of GeSn/Ge MQW LEDs on Si substrate</title>
    <parentTitle language="eng">Optics Letters</parentTitle>
    <identifier type="doi">10.1364/OL40.003209</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Widmann</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Bechler</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Torsten</firstName>
      <lastName>Wendav</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14977</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1077</pageFirst>
    <pageLast>1080</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>12</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, MPI Halle</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">About dislocation and oxygen related luminescence of Si around 0.8 eV</title>
    <parentTitle language="eng">Physica Status Solidi C</parentTitle>
    <identifier type="doi">10.1002/pssc.201400231</identifier>
    <identifier type="issn">1610-1642</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Mankovics</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14980</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1071</pageFirst>
    <pageLast>1076</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>12</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IHP, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Strain and carrier transport along dislocations</title>
    <parentTitle language="eng">Physica Status Solidi C</parentTitle>
    <identifier type="doi">10.1002/pssc.201400298</identifier>
    <identifier type="issn">1610-1642</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <author>
      <firstName>Wilfried</firstName>
      <lastName>Erfurth</lastName>
    </author>
    <author>
      <firstName>Angelika</firstName>
      <lastName>Haehnel</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14982</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>141</pageFirst>
    <pageLast>146</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>242</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>MPI Halle, IHP, TU Wien, CIS Erfurt</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electronic Properties of Dislocations</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.242.141</identifier>
    <identifier type="issn">1012-0394</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Eckhard</firstName>
      <lastName>Pippel</lastName>
    </author>
    <author>
      <firstName>Hans</firstName>
      <lastName>Kosina</lastName>
    </author>
    <author>
      <firstName>Alois</firstName>
      <lastName>Lugstein</lastName>
    </author>
    <author>
      <firstName>Hartmut</firstName>
      <lastName>Übensee</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14983</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>361</pageFirst>
    <pageLast>367</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>242</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.242.361</identifier>
    <identifier type="issn">1012-0394</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Philipp</firstName>
      <lastName>Saring</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>15027</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>12</volume>
    <type>periodical</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Physica Status Solidi : C</title>
    <identifier type="doi">10.1002/pssc.201570099</identifier>
    <note>Special Issue: 17th International Conference on Extended Defects in Semiconductors (EDS 2014)</note>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <editor>
      <firstName>Michael</firstName>
      <lastName>Seibt</lastName>
    </editor>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <editor>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </editor>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>15029</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>patent</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, MPI Halle</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Light-emitting semiconductor structure and optoelectronic component therefrom</title>
    <enrichment key="Patentnr">US Patent 9, 147, 998, 2015</enrichment>
    <enrichment key="Patentnr">Patentnr. 9147998</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Patentnr">Anmeldenummer: 13/668, 330</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Reiche</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
</export-example>
