<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>5038</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Scaling effects on microstructure and reliability for cu interconnects</title>
    <enrichment key="UBICOIdent">005867</enrichment>
    <enrichment key="UBICOquelle">International journal of materials research  101(2010)2, S. 216-227, 0179-4841</enrichment>
    <author>
      <firstName>Paul S.</firstName>
      <lastName>Ho</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Moritz Andreas</firstName>
      <lastName>Meyer</lastName>
    </author>
    <author>
      <firstName>Rene</firstName>
      <lastName>Huebner</lastName>
    </author>
    <author>
      <firstName>Meike</firstName>
      <lastName>Hauschildt</lastName>
    </author>
    <author>
      <firstName>Lijuan</firstName>
      <lastName>Zhang</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gall</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Kraatz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scaling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microstructure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interconnects</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13836</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 292</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Statistical Analysis of Computer-simulated On-Chip Interconnect Electromigration Lifetimes under the Influence of Microstructure and Strengthened Top Interface</title>
    <abstract language="eng">We are investigating the statistics of computer-simulated interconnect electromigration (EM) lifetimes with regard to the effects of microstructure and a strengthened top interface. The degradation process of EM once threatened the entire existence of integrated circuit industry in the 1960s and has remained a major reliability concern. Ongoing miniaturization and the introduction of new materials further complicate the task of EM-resistant chip manufacturing. We have developed a simple two-dimensional finite difference simulation that models the mass transport by electromigration along the grain boundaries and the top interface of interconnect segments that allows us to do calculations of void nucleation and growth. A parallel computer simulates hundreds of interconnects simultaneously and statistical analysis becomes feasible. A Monte Carlo grain growth algorithm (a modified Potts version) is applied to model the grain structure of the interconnect segments. We will show that the simulation can be used to compare simulation and experiment qualitatively. Four cases have been studied: interconnect segments with small/large grains and weak/strong top interface.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/ds/session/7/contribution/2</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Kraatz</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Lijuan</firstName>
      <lastName>Zhang</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
    </author>
    <author>
      <firstName>Paul S.</firstName>
      <lastName>Ho</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
