<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>27016</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue/>
    <volume>176</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Advanced Temperature Dependent Statistical Analysis of Forming Voltage Distributions for Three Different HfO2-Based RRAM Technologies</title>
    <abstract language="eng">In this work, voltage distributions of forming operations are analyzed by using an advanced statistical approach based on phase-type distributions (PHD). The experimental data were collected from batches of 128 HfO2-based RRAM devices integrated in 4-kbit arrays. Three di erent switching oxides, namely, polycrystalline HfO2, amorphous HfO2, and Al-doped HfO2, were tested in the temperature range from -40 to 150 oC. The variability of forming voltages has been usually studied by using the Weibull distribution (WD). However, the performance of the PHD analysis demonstrated its ability to better model this crucial operation. The capacity of the PHD to reproduce the experimental data has been validated by means of the Kolmogorov-Smirnov test, while the WD failed in many of the cases studied. In addition, PHD allows to extract information about intermediate probabilistic states that occur in the forming process and the transition probabilities between them; in this manner, we can deepen on the conductive lament formation physics. In particular, the number of intermediate states can be related to the device variability.</abstract>
    <parentTitle language="eng">Solid State Electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <identifier type="issn">1879-2405</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">107961</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>David</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Acal</lastName>
    </author>
    <author>
      <firstName>Juan Eloy</firstName>
      <lastName>Ruiz-Castro</lastName>
    </author>
    <author>
      <firstName>Ana María</firstName>
      <lastName>Aguilera</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>31349</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>209</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-09-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Efficient circuit simulation of a memristive crossbar array with synaptic weight variability</title>
    <abstract language="eng">In this paper, we present a method for highly-efficient circuit simulation of a hardware-based artificial neural network realized in a memristive crossbar array. The statistical variability of the devices is considered by a noise-based simulation technique. For the simulation of a crossbar array with 8 synaptic weights in Cadence Virtuoso the new approach shows a more than 200x speed improvement compared to a Monte Carlo approach, yielding the same results. In addition, first results of an ANN with more than 15,000 memristive devices classifying test data of the MNIST dataset are shown, for which the speed improvement is expected to be several orders of magnitude. Furthermore, the influence on the classification of parasitic resistances of the connection lines in the crossbar is shown.</abstract>
    <parentTitle language="eng">Solid State Electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <identifier type="doi">10.1016/j.sse.2023.108760</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="RelationnotEU">16ME0092</enrichment>
    <enrichment key="BTUfunderNamenotEU">BMBF</enrichment>
    <enrichment key="Artikelnummer">108760</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Nadine</firstName>
      <lastName>Dersch</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Roemer</lastName>
    </author>
    <author>
      <firstName>Mike</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Kloes</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27018</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>14</pageNumber>
    <edition/>
    <issue>3</issue>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Study of Quantized Hardware Deep Neural Networks Based on Resistive Switching Devices, Conventional versus Convolutional Approaches</title>
    <abstract language="eng">A comprehensive analysis of two types of artificial neural networks (ANN) is performed to assess the influence of quantization on the synaptic weights. Conventional multilayer-perceptron (MLP) and convolutional neural networks (CNN) have been considered by changing their features in the training and inference contexts, such as number of levels in the quantization process, the number of hidden layers on the network topology, the number of neurons per hidden layer, the image databases, the number of convolutional layers, etc. A reference technology based on 1T1R structures with bipolar memristors including HfO2 dielectrics was employed, accounting for different multilevel schemes and the corresponding conductance quantization algorithms. The accuracy of the image recognition processes was studied in depth. This type of studies are essential prior to hardware implementation of neural networks. The obtained results support the use of CNNs for image domains. This is linked to the role played by convolutional layers at extracting image features and reducing the data complexity. In this case, the number of synaptic weights can be reduced in comparison to conventional MLPs.</abstract>
    <parentTitle language="eng">Electronics (MDPI)</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics10030346</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">346</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Rocío</firstName>
      <lastName>Romero-Zaliz</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resistive switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27019</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Neuromorphic on‑chip recognition of saliva samples of COPD and healthy controls using memristive devices</title>
    <abstract language="eng">Chronic Obstructive Pulmonary Disease (COPD) is a life-threatening lung disease, affecting millions of people worldwide. Implementation of Machine Learning (ML) techniques is crucial for the effective management of COPD in home-care environments. However, shortcomings of cloud-based ML tools in terms of data safety and energy efficiency limit their integration with low-power medical devices. To address this, energy efficient neuromorphic platforms can be used for the hardware-based implementation of ML methods. Therefore, a memristive neuromorphic platform is presented in this paper for the on-chip recognition of saliva samples of COPD patients and healthy controls. The results of its performance evaluations showed that the digital neuromorphic chip is capable of recognizing unseen COPD samples with accuracy and sensitivity values of 89% and 86%, respectively. Integration of this technology into personalized healthcare devices will enable the better management of chronic diseases such as COPD.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="issn">2045-2322</identifier>
    <identifier type="doi">10.1038/s41598-020-76823-7</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">19742</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Pouya</firstName>
      <lastName>Soltani Zarrin</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Finn</firstName>
      <lastName>Zahari</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Hermann</firstName>
      <lastName>Kohlstedt</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27027</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4611</pageFirst>
    <pageLast>4615</pageLast>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>67</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays</title>
    <abstract language="eng">Logic-in-memory (LiM) circuits based on resistive random access memory (RRAM) devices and the material implication logic are promising candidates for the development of low-power computing devices that could fulfill the growing demand of distributed computing systems. However, these circuits are affected by many reliability challenges that arise from device nonidealities (e.g., variability) and the characteristics of the employed circuit architecture. Thus, an accurate investigation of the variability at the array level is needed to evaluate the reliability and performance of such circuit architectures. In this work, we explore the reliability and performance of smart IMPLY (SIMPLY) (i.e., a recently proposed LiM architecture with improved reliability and performance) on two 4-kb RRAM arrays based on different resistive switching oxides integrated in the back end of line (BEOL) of the 0.25- μm BiCMOS process. We analyze the tradeoff between reliability and energy consumption of SIMPLY architecture by exploiting the results of an extensive array-level variability characterization of the two technologies. Finally, we study the worst case performance of a full adder implemented with the SIMPLY architecture and benchmark it on the analogous CMOS implementation.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="issn">0018-9383</identifier>
    <identifier type="issn">1557-9646</identifier>
    <identifier type="doi">10.1109/TED.2020.3025271</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Tommaso</firstName>
      <lastName>Zanotti</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Francesco Maria</firstName>
      <lastName>Puglisi</lastName>
    </author>
    <author>
      <firstName>Valerio</firstName>
      <lastName>Milo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Óscar G.</firstName>
      <lastName>Ossorio</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Paolo</firstName>
      <lastName>Pavan</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>in-memory computing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27029</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>15</pageNumber>
    <edition/>
    <issue/>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analogue pattern recognition with stochastic switching binary CMOS‑integrated memristive devices</title>
    <abstract language="eng">Biological neural networks outperform todays computer technology in terms of power consumption and computing speed when associative tasks, like pattern recognition, are to be solved. The analogue and massive parallel in-memory computing in biology differs strongly with conventional transistor electronics using the von Neumann architecture. Therefore, novel bio-inspired computing architectures are recently highly investigated in the area of neuromorphic computing. Here, memristive devices, which serve as non-volatile resistive memory, are used to emulate the plastic behaviour of biological synapses. In particular, CMOS integrated resistive random access memory (RRAM) devices are promising candidates to extend conventional CMOS technology in neuromorphic systems. However, dealing with the inherent stochasticity of the resistive switching effect can be  challenging for network performance. In this work, the probabilistic switching is exploited to emulate stochastic plasticity with fully CMOS integrated binary RRAM devices. Two different RRAM technologies with different device variabilities are investigated in detail and their use in a stochastic artificial neural network (StochANN) to solve the MINST pattern recognition task is examined. A mixed-signal implementation with hardware synapses and software neurons as well as numerical simulations show the proposed concept of stochastic computing is able to handle analogue data with binary memory cells.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="issn">2045-2322</identifier>
    <identifier type="doi">10.1038/s41598-020-71334-x</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">14450</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Finn</firstName>
      <lastName>Zahari</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Hermann</firstName>
      <lastName>Kohlstedt</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Ziegler</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27031</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IEEE</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation</title>
    <abstract language="eng">An artificial neural network based on resistive switching memristors is implemented and simulated in LTspice. The influence of memristor variability and the reduction of the continuous range of synaptic weights into a discrete set of conductance levels is analyzed. To do so, a behavioral model is proposed for multilevel resistive switching memristors based on Al-doped HfO2 dielectrics, and it is implemented in a spice based circuit simulator. The model provides an accurate description of the conductance in the different conductive states in addition to describe the device-to-device variability</abstract>
    <parentTitle language="eng">XXXV Conference on Design of Circuits and Integrated Systems (DCIS), Segovia, Spain</parentTitle>
    <identifier type="doi">10.1109/DCIS51330.2020.9268652</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Antonio Javier</firstName>
      <lastName>Perez-Avila</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Gerardo</firstName>
      <lastName>Gonzalez-Cordero</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>behavorial model</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27032</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>9</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays</title>
    <abstract language="deu">A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width</abstract>
    <parentTitle language="eng">Electronics (MDPI)</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics9050864</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">864</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Óscar G.</firstName>
      <lastName>Ossorio</lastName>
    </author>
    <author>
      <firstName>Salvador</firstName>
      <lastName>Dueñas</lastName>
    </author>
    <author>
      <firstName>Helena</firstName>
      <lastName>Castán</lastName>
    </author>
    <author>
      <firstName>Hector</firstName>
      <lastName>García</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Reliability</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27134</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>13</pageNumber>
    <edition/>
    <issue>6</issue>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-03-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems</title>
    <abstract language="eng">In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of&#13;
experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance&#13;
levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.</abstract>
    <parentTitle language="eng">Electronics (MDPI)</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics10060645</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">645</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Pérez-Bosch Quesada</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Rocío</firstName>
      <lastName>Romero-Zaliz</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>John</firstName>
      <lastName>Reuben</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jiménez-Molinos</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldán</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>compact modeling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Verilog-A</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27064</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>17</pageNumber>
    <edition/>
    <issue>5</issue>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells</title>
    <abstract language="eng">In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage&#13;
pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9.</abstract>
    <parentTitle language="eng">Electronics</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics10050530</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">530</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Timo</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Völkel</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Marc</firstName>
      <lastName>Reichenbach</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Amelie</firstName>
      <lastName>Hagelauer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Programming circuit</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27376</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>15</pageNumber>
    <edition/>
    <issue>9</issue>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimization of Multi-Level Operation in RRAM Arrays for In-Memory Computing</title>
    <abstract language="eng">Accomplishing multi-level programming in resistive random access memory (RRAM) arrays with truly discrete and linearly spaced conductive levels is crucial in order to implement synaptic weights in hardware-based neuromorphic systems. In this paper, we implemented this feature on 4-kbit 1T1R RRAM arrays by tuning the programming parameters of the multi-level incremental step pulse with verify algorithm (M-ISPVA). The optimized set of parameters was assessed by comparing its results with a non-optimized one. The optimized set of parameters proved to be an effective way to define non-overlapped conductive levels due to the strong reduction of the device-to-device variability as well as of the cycle-to-cycle variability, assessed by inter-levels switching tests and during 1k reset-set cycles. In order to evaluate this improvement in real scenarios, the experimental characteristics of the RRAM devices were captured by means of a behavioral model, which was used to simulate two different neuromorphic systems: an 8×8 vector-matrixmultiplication (VMM) accelerator and a 4-layer feedforward neural network for MNIST database recognition. The results clearly showed that the optimization of the programming parameters improved both the precision of VMM results as well as the recognition accuracy of the neural network in about 6% compared with the use of non-optimized parameters.</abstract>
    <parentTitle language="eng">Electronics (MDPI)</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics10091084</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1084</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Antonio Javier</firstName>
      <lastName>Pérez-Ávila</lastName>
    </author>
    <author>
      <firstName>Rocío</firstName>
      <lastName>Romero-Zaliz</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Pérez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jiménez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In-memory computing</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27377</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-05-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimized programming algorithms for multilevel RRAM in hardware neural networks</title>
    <abstract language="eng">A key requirement for RRAM in neural network accelerators with a large number of synaptic parameters is the multilevel programming. This is hindered by resistance imprecision due to cycle-to-cycle and device-to-device variations. Here, we compare two multilevel programming algorithms to minimize resistance variations in a 4-kbit array of HfO 2 RRAM. We show that gate-based algorithms have the highest reliability. The optimized scheme is used to implement a neural network with 9-level weights, achieving 91.5% (vs. software 93.27%) in MNIST recognition.</abstract>
    <parentTitle language="eng">IEEE International Reliability Physics Symposium (IRPS), 2021</parentTitle>
    <identifier type="isbn">978-1-7281-6894-4</identifier>
    <identifier type="issn">1938-1891</identifier>
    <identifier type="doi">10.1109/IRPS46558.2021.9405119</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Valerio</firstName>
      <lastName>Milo</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Francesco</firstName>
      <lastName>Anzalone</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Óscar G.</firstName>
      <lastName>Ossorio</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27345</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>8</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-04-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks</title>
    <parentTitle language="eng">EUROMICRO Conference on Digital System Design (DSD 2020), Special Session: Architecture and Hardware for Security Applications (AHSA)</parentTitle>
    <identifier type="doi">10.1109/DSD51259.2020.00047</identifier>
    <identifier type="isbn">978-1-7281-9535-3</identifier>
    <identifier type="issn">978-1-7281-9536-0</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Dmytro</firstName>
      <lastName>Petryk</lastName>
    </author>
    <submitter>
      <firstName>Kathleen</firstName>
      <lastName>Galke</lastName>
    </submitter>
    <author>
      <firstName>Zoya</firstName>
      <lastName>Dyka</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Ievgen</firstName>
      <lastName>Kabin</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Langendörfer</lastName>
    </author>
    <collection role="institutes" number="1221H01">FG Verteilte Messsysteme und Sensornetzwerke</collection>
  </doc>
  <doc>
    <id>27551</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>5</pageNumber>
    <edition/>
    <issue/>
    <volume>185</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-06-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of variability on the performance of HfO2 memristor-based convolutional neural networks</title>
    <abstract language="eng">A study of convolutional neural networks (CNNs) was performed to analyze the influence of quantization and variability in the network synaptic weights. Different CNNs were considered accounting for the number of convolutional layers, size of the filters in the convolutional layer, number of neurons in the final network layers and different sets of quantization levels. The conductance levels of fabricated 1T1R structures based on HfO2 memristors were considered as reference for four or eight level quantization processes at the inference stage of the CNNs, which were previous trained with the MNIST dataset. We also included the variability of the experimental conductance levels that was found to be Gaussian distributed and was correspondingly modeled for the synaptic weight implementation.</abstract>
    <parentTitle language="eng">Solid State Electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <identifier type="doi">10.1016/j.sse.2021.108064</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">108064</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Rocío</firstName>
      <lastName>Romero-Zaliz</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27514</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2693</pageFirst>
    <pageLast>2698</pageLast>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>68</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-05-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays</title>
    <abstract language="eng">Achieving a reliable multi-level programming operation in resistive random access memory (RRAM) arrays is still a challenging task. In this work, we assessed the impact of the voltage step value used by the programming algorithm on the device-to-device (DTD) variability of the current distributions of four conductive levels and on the energy consumption featured by programming 4-kbit HfO2-based RRAM arrays. Two different write-verify algorithms were considered and compared, namely, the incremental gate voltage with verify algorithm (IGVVA) and the incremental step pulse with verify algorithm (ISPVA). By using the IGVVA, a main trade-off has to be taken into account since reducing the voltage step leads to a smaller DTD variability at the cost of a strong increase in the energy consumption. Although the ISPVA can not reduce the DTD variability as much as the IGVVA, its voltage step can be decreased in order to reduce the energy consumption with almost no impact on the DTD variability. Therefore, the final decision on which algorithm&#13;
to employ should be based on the specific application targeted for the RRAM array.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="issn">0018-9383</identifier>
    <identifier type="issn">1557-9646</identifier>
    <identifier type="doi">10.1109/TED.2021.3072868</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>27516</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>29</pageFirst>
    <pageLast>35</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>102</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-05-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Performance Assessment of Amorphous HfO2-based RRAM Devices for Neuromorphic Applications</title>
    <abstract language="eng">The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior.</abstract>
    <parentTitle language="eng">ECS Transactions</parentTitle>
    <identifier type="issn">1938-6737</identifier>
    <identifier type="issn">1938-5862</identifier>
    <identifier type="doi">10.1149/10202.0029ecst</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Óscar G.</firstName>
      <lastName>Ossorio</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Guillermo</firstName>
      <lastName>Vinuesa</lastName>
    </author>
    <author>
      <firstName>Hector</firstName>
      <lastName>Garcia</lastName>
    </author>
    <author>
      <firstName>Benjamin</firstName>
      <lastName>Sahelices</lastName>
    </author>
    <author>
      <firstName>Salvador</firstName>
      <lastName>Dueñas</lastName>
    </author>
    <author>
      <firstName>Helena</firstName>
      <lastName>Castán</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resistive switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
    <collection role="institutes" number="1482">FG Grundlagen der Informatik, mathematische Grundlagen</collection>
  </doc>
  <doc>
    <id>27968</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>8</pageNumber>
    <edition/>
    <issue>2</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-11-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Memristive-based in-memory computing: from device to large-scale CMOS integration</title>
    <abstract language="eng">With the rapid emergence of in-memory computing systems based on memristive technology, the integration of such memory devices in large-scale architectures is one of the main aspects to tackle.&#13;
In this work we present a study of HfO2-based memristive devices for their integration in large-scale CMOS systems, namely 200 mm wafers. The DC characteristics of single metal–insulator–metal&#13;
devices are analyzed taking under consideration device-to-device variabilities and switching properties. Furthermore, the distribution of the leakage current levels in the pristine state of the&#13;
samples are analyzed and correlated to the amount of formingless memristors found among the measured devices. Finally, the obtained results are fitted into a physic-based compact model that&#13;
enables their integration into larger-scale simulation environments.</abstract>
    <parentTitle language="eng">Neuromorphic Computing and Engineering</parentTitle>
    <identifier type="issn">2634-4386</identifier>
    <identifier type="doi">10.1088/2634-4386/ac2cd4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">024006</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28195</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>5</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-12-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Tackling the Low Conductance State Drift through Incremental Reset and Verify in RRAM Arrays</title>
    <abstract language="eng">Resistive switching memory (RRAM) is a promising technology for highly efficient computing scenarios. RRAM arrays enabled the acceleration of neural networks for artificial intelligence and the creation of In-Memory Computing circuits. However, the arrays are affected by several issues materializing in conductance variations that might cause severe performance degradation in those applications. Among those, one is related to the drift of the low conductance states appearing immediately at the end of program and verify algorithms that are fundamental for an accurate Multi-level conductance operation. In this work, we tackle the issue by developing an Incremental Reset and Verify technique showing enhanced variability and reliability features compared with a traditional refresh-based approach.</abstract>
    <parentTitle language="eng">2021 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA, 10 December 2021</parentTitle>
    <identifier type="doi">10.1109/IIRW53245.2021.9635613</identifier>
    <identifier type="isbn">978-1-6654-1794-5</identifier>
    <identifier type="isbn">978-1-6654-1795-2</identifier>
    <identifier type="issn">2374-8036</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resistive switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28196</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>24</issue>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-12-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An Analysis on the Architecture and the Size of Quantized Hardware Neural Networks Based on Memristors</title>
    <abstract language="eng">We have performed different simulation experiments in relation to hardware neural networks (NN) to analyze the role of the number of synapses for different NN architectures in the network accuracy, considering different datasets. A technology that stands upon 4-kbit 1T1R ReRAM arrays, where resistive switching devices based on HfO2 dielectrics are employed, is taken as a reference. In our study, fully dense (FdNN) and convolutional neural networks (CNN) were considered, where the NN size in terms of the number of synapses and of hidden layer neurons were varied. CNNs work better when the number of synapses to be used is limited. If quantized synaptic weights are included, we observed thatNNaccuracy decreases significantly as the number of synapses is reduced; in this respect, a trade-off between the number of synapses and the NN accuracy has to be achieved. Consequently, the CNN architecture must be carefully designed; in particular, it was noticed that different datasets need specific architectures according to their complexity to achieve good results. It was shown that due to the number of variables that can be changed in the optimization of a NN hardware implementation, a specific solution has to be worked in each case in terms of synaptic weight levels, NN architecture, etc.</abstract>
    <parentTitle language="eng">Electronics (MDPI)</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics10243141</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">3141</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Rocio</firstName>
      <lastName>Romero-Zaliz</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Antonio</firstName>
      <lastName>Cantudo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28793</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>4</pageNumber>
    <edition/>
    <issue/>
    <volume>194</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-04-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Implementation of device-to-device and cycle-to-cycle variability of  memristive devices in circuit simulations</title>
    <abstract language="eng">We present a statistical procedure for the extraction of parameters of a compact model for memristive devices. Thereby, in a circuit simulation the typical fluctuations of the current–voltage (I-V) characteristics from device-to-device (D2D) and from cycle-to-cycle (C2C) can be emulated. The approach is based on the Stanford model &#13;
whose parameters play a key role to integrating D2D and C2C dispersion. The influence of such variabilities over the model’s parameters is investigated by using a fitting algorithm fed with experimental data. After this, the statistical distributions of the parameters are used in a Monte Carlo simulation to reproduce the I-V D2D and C2C dispersions which show a good agreement to the measured curves. The results allow the simulation of the on/off current variation for the design of RRAM cells or memristor-based artificial neural networks.</abstract>
    <parentTitle language="eng">Solid-State Electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <identifier type="doi">10.1016/j.sse.2022.108321</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">108321</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Carl</firstName>
      <lastName>Bischoff</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Jakob</firstName>
      <lastName>Leise</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Kloes</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>circuit simulation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28701</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4</pageFirst>
    <pageLast>13</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>16</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-03-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-Memory Principal Component Analysis by Crosspoint Array of Rresistive Switching Memory</title>
    <abstract language="eng">In Memory Computing (IMC) is one of the most promising candidates&#13;
for data-intensive computing accelerators of machine learning (ML). A key ML algorithm for dimensionality reduction and classification is principal component analysis (PCA), which heavily relies on matrixvector multiplications (MVM) for which classic von Neumann architectures are not optimized. Here, we provide the experimental&#13;
demonstration of a new IMCbased PCA algorithm based on power iteration and deflation executed in a 4-kbit array of resistive switching random-access memory (RRAM). The classification accuracy of the Wisconsin Breast Cancer data set reaches 95.43%, close to floatingpoint implementation. Our simulations indicate a 250× improvement in energy efficiency compared to commercial GPUs, thus supporting IMC for energy-efficient ML in modern data-intensive computing.</abstract>
    <parentTitle language="eng">IEEE Nanotechnology Magazine</parentTitle>
    <identifier type="issn">1932-4510</identifier>
    <identifier type="doi">10.1109/MNANO.2022.3141515</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Piergiulio</firstName>
      <lastName>Mannocci</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Enrico</firstName>
      <lastName>Melacarne</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28853</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>14</pageNumber>
    <edition/>
    <issue>10</issue>
    <volume>11</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-05-12</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers</title>
    <abstract language="eng">The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3&#13;
into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.</abstract>
    <parentTitle language="eng">Electronics : open access journal</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics11101540</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1540</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Mai</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>filamentary switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>28821</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3C.3-1</pageFirst>
    <pageLast>3C.3-7</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-05-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators</title>
    <abstract language="eng">Resistive-switching random access memory (RRAM) is a promising technology for in-memory computing (IMC) to accelerate training and inference of deep neural networks (DNNs). This work presents the first physics-based statistical model describing (i) multilevel RRAM device program/verify (PV) algorithms by controlled set transition, (ii) the stochastic cycle-to-cycle (C2C) and device-to-device (D2D) variations within the array, and (iii) the impact of such imprecisions on the accuracy of DNN accelerators. The model can handle the full chain from RRAM materials/device parameters to the DNN performance, thus providing a valuable tool for device/circuit codesign of hardware DNN accelerators.</abstract>
    <parentTitle language="eng">2022 IEEE International Reliability Physics Symposium (IRPS)</parentTitle>
    <identifier type="issn">2473-2001</identifier>
    <identifier type="doi">10.1109/IRPS48227.2022.9764497</identifier>
    <identifier type="isbn">978-1-6654-7950-9</identifier>
    <identifier type="isbn">978-1-6654-7951-6</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Artem</firstName>
      <lastName>Glukhov</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Valerio</firstName>
      <lastName>Milo</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Nicola</firstName>
      <lastName>Lepri</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29035</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>7</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>61</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-06-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-depth characterization of switching dynamics in amorphous HfO2 memristive arrays for the implementation of synaptic updating rules</title>
    <abstract language="eng">Accomplishing truly analog conductance modulation in memristive arrays is crucial in order to implement the synaptic plasticity in hardware-based neuromorphic systems. In this paper, such a feature was addressed by exploiting the inherent stochasticity of switching dynamics in amorphous HfO2 technology. A thorough statistical analysis of experimental characteristics measured in 4 kbit arrays by using trains of identical depression/potentiation pulses with different voltage amplitudes and pulse widths provided the key to develop two different updating rules and to define their optimal programming parameters. The first rule is based on applying a specific number of identical pulses until the conductance value achieves the&#13;
desired level. The second one utilized only one single pulse with a particular amplitude to achieve the targeted conductance level. In addition, all the results provided by the statistical analysis performed may play an important role in understanding better the switching behavior of this particular technology.</abstract>
    <parentTitle language="eng">Japanese Journal of Applied Physics</parentTitle>
    <identifier type="issn">0021-4922</identifier>
    <identifier type="doi">10.35848/1347-4065/ac6a3b</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">SM 1007</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29219</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>16</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>Vol. 16</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-08-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories</title>
    <abstract language="eng">One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options. Tools like Machine Learning and Deep Neural Networks are becoming a de-facto standard. Nowadays, computing facilities based on the Von Neumann architecture are devoted to these tasks, yet rapidly hitting a bottleneck in performance and energy efficiency. The In-Memory Computing (IMC) architecture emerged as a revolutionary approach to overcome that issue. In this work, we propose an IMC architecture based on Resistive switching memory (RRAM) crossbar arrays to provide a convenient primitive for matrix–vector multiplication in a single computational step. This opens massive performance improvement in the acceleration of a neural network that is frequently used in survival analysis of biomedical records, namely the DeepSurv. We explored how the synaptic weights mapping strategy and the programming algorithms developed to counter RRAM non-idealities expose a performance/energy trade-off. Finally, we assessed the benefits of the proposed architectures with respect to a GPU-based realization of the same task, evidencing a tenfold improvement in terms of performance and three orders of magnitude with respect to energy efficiency.</abstract>
    <parentTitle language="eng">Frontiers in Neuroscience</parentTitle>
    <identifier type="issn">1662-4548</identifier>
    <identifier type="doi">10.3389/fnins.2022.932270</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">932270</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Artem</firstName>
      <lastName>Glukhov</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Enrico</firstName>
      <lastName>Calore</lastName>
    </author>
    <author>
      <firstName>Sebastiano Fabio</firstName>
      <lastName>Schifano</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In-Memory Computing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29207</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>83</pageFirst>
    <pageLast>88</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-08-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks</title>
    <abstract language="eng">The impact of artificial intelligence on human life&#13;
has increased significantly in recent years. However, as the&#13;
complexity of problems rose aswell, increasing system features&#13;
for such amount of data computation became troublesome due&#13;
to the von Neumann’s computer architecture. Neuromorphic&#13;
computing aims to solve this problem by mimicking the parallel&#13;
computation of a human brain. For this approach, memristive&#13;
devices are used to emulate the synapses of a human brain. Yet,&#13;
common simulations of hardware based networks require time&#13;
consuming Monte-Carlo simulations to take into account the&#13;
stochastic switching of memristive devices. This work presents&#13;
an alternative concept making use of the convolution of the&#13;
probability distribution functions (PDF) of memristor currents&#13;
by its equivalent multiplication in Fourier domain. An artificial&#13;
neural network is accordingly implemented to perform the&#13;
inference stage with handwritten digits.</abstract>
    <parentTitle language="eng">29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), 23-24 June 2022 , Wrocław, Poland</parentTitle>
    <identifier type="doi">10.23919/MIXDES55591.2022.9838321</identifier>
    <identifier type="isbn">978-83-63578-22-0</identifier>
    <identifier type="isbn">978-83-63578-21-3</identifier>
    <identifier type="isbn">978-1-6654-6176-4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Nicolas</firstName>
      <lastName>Bogun</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Kloes</lastName>
    </author>
    <author>
      <firstName>Mike</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29286</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>340</pageFirst>
    <pageLast>347</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>22</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-09-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks</title>
    <abstract language="eng">The crossbar structure of Resistive-switching random access memory (RRAM) arrays enabled the In-Memory Computing circuits paradigm, since they imply the native acceleration of a crucial operations in this scenario, namely the Matrix-Vector-Multiplication (MVM). However, RRAM arrays are affected by several issues materializing in conductance variations that might cause severe performance degradation. A critical&#13;
one is related to the drift of the low conductance states appearing&#13;
immediately at the end of program and verify algorithms that&#13;
are mandatory for an accurate multi-level conductance operation. In this work, we analyze the benefits of a new programming&#13;
algorithm that embodies Set and Reset switching operations to&#13;
achieve better conductance control and lower variability. Data&#13;
retention analysis performed with different temperatures for 168&#13;
hours evidence its superior performance with respect to standard programming approach. Finally, we explored the benefits&#13;
of using our methodology at a higher abstraction level, through&#13;
the simulation of an Artificial Neural Network for image recognition task (MNIST dataset). The accuracy achieved shows higher&#13;
performance stability over temperature and time.</abstract>
    <parentTitle language="eng">IEEE Transactions on Device and Materials Reliability</parentTitle>
    <identifier type="issn">1530-4388</identifier>
    <identifier type="doi">10.1109/TDMR.2022.3182133</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Artem</firstName>
      <lastName>Glukhov</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29534</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>5</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-11-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">End-to-end modeling of variability-aware neural networks based on resistive-switching memory arrays</title>
    <abstract language="eng">Resistive-switching random access memory (RRAM) is a promising technology that enables advanced applications in the field of in-memory computing (IMC). By operating the memory array in the analogue domain, RRAM-based IMC architectures can dramatically improve the energy efficiency of deep neural networks (DNNs). However, achieving a high inference accuracy is challenged by significant variation of RRAM conductance levels, which can be compensated by (i) advanced programming techniques and (ii) variability-aware training (VAT) algorithms. In both cases, however, detailed knowledge and accurate physics-based statistical models of RRAM are needed to develop programming and VAT methodologies. This work presents an end-to-end approach to the development of highly-accurate IMC circuits with RRAM, encompassing the device modeling, the precise programming algorithm, and the VAT simulations to maximize the DNN classification accuracy in presence of conductance variations.</abstract>
    <parentTitle language="eng">Proc. 30th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC 2022)</parentTitle>
    <identifier type="doi">10.1109/VLSI-SoC54400.2022.9939653</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Artem</firstName>
      <lastName>Glukhov</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Nicola</firstName>
      <lastName>Lepri</lastName>
    </author>
    <author>
      <firstName>Valerio</firstName>
      <lastName>Milo</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <author>
      <firstName>Piero</firstName>
      <lastName>Olivo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>neural network</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive switching</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29718</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-12-08</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages</title>
    <abstract language="eng">RRAM technology is a promising candidate for implementing efficient AI accelerators with extensive multiply-accumulate operations. By scaling RRAM devices to the synaptic crossbar array, the computations can be realized in situ, avoiding frequent weights transfer between the processing units and memory. Besides, as the computations are conducted in the analog domain with high flexibility, applying multilevel input voltages to the RRAM devices with multilevel conductance states enhances the computational efficiency further. However, several non-idealities existing in emerging RRAM technology may degrade the reliability of the system. In this paper, we measured and investigated the impact of read disturb on RRAM devices with different input voltages, which incurs conductance drifts and introduces errors. The measured data are deployed to simulate the RRAM based AI inference engines with multilevel states.</abstract>
    <parentTitle language="eng">2022 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)</parentTitle>
    <identifier type="doi">10.1109/DFT56152.2022.9962345</identifier>
    <identifier type="isbn">978-1-6654-5938-9</identifier>
    <identifier type="isbn">978-1-6654-5937-2</identifier>
    <identifier type="issn">2765-933X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Jianan</firstName>
      <lastName>Wen</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ulbricht</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Milos</firstName>
      <lastName>Krstic</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multilevel switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>AI accelarator</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>29886</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>360</pageFirst>
    <pageLast>365</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>70</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-01-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale</title>
    <abstract language="eng">The stochastic nature of the resistive switching (RS) process in memristive devices makes device-to-device (DTD) and cycle-to-cycle (CTC) variabilities relevant magnitudes to be quantified and modeled. To accomplish this aim, robust and reliable parameter extraction methods must be employed. In this work, four different extraction methods were used at the production level (over all the 108 devices integrated on 200-mm wafers manufactured in the IHP 130-nm CMOS technology) in order to obtain the corresponding collection of forming, reset, and set switching voltages. The statistical analysis of the experimental data (mean and standard deviation (SD) values) was plotted by using heat maps, which provide a good summary of the whole data at a glance and, in addition, an easy manner to detect inhomogeneities in the fabrication process.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="issn">0018-9383</identifier>
    <identifier type="doi">10.1109/TED.2022.3224886</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>David</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cycle-to-cycle variability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>device-to-device variability</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>33128</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>4</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-04-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A current mirror Based read circuit design with multi-level capability for resistive switching deviceb</title>
    <abstract language="eng">This paper presents a read circuit design for resistive memory cells based on current mirrors. The circuit utilizes high-precision current mirrors and reference cells to determine the state of resistive memory using comparators. It offers a high degree in adaptability in terms of both resistance range and number of levels. Special emphasis was put on device protection to prevent accidental programming of the memory during read operations. The realized circuit can resolve eight states with a resolution of up to 1 k Ω, realizing a digitization of the analog memory information. Furthermore, the integration in a complete memory macro is shown. The circuit was realized in a 130 nm-process but can easily be adapted to other processes and resistive memory technologies.</abstract>
    <parentTitle language="eng">2024 International Conference on Electronics, Information, and Communication (ICEIC)</parentTitle>
    <identifier type="doi">10.1109/ICEIC61013.2024.10457188</identifier>
    <identifier type="isbn">979-8-3503-7188-8</identifier>
    <identifier type="issn">2767-7699</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Amelie</firstName>
      <lastName>Hagelauer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>33251</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>14</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-04-08</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Blooming and pruning: learning from mistakes with memristive synapses</title>
    <abstract language="eng">AbstractBlooming and pruning is one of the most important developmental mechanisms of the biological brain in the first years of life, enabling it to adapt its network structure to the demands of the environment. The mechanism is thought to be fundamental for the development of cognitive skills. Inspired by this, Chialvo and Bak proposed in 1999 a learning scheme that learns from mistakes by eliminating from the initial surplus of synaptic connections those that lead to an undesirable outcome. Here, this idea is implemented in a neuromorphic circuit scheme using CMOS integrated HfO2-based memristive devices. The implemented two-layer neural network learns in a self-organized manner without positive reinforcement and exploits the inherent variability of the memristive devices. This approach provides hardware, local, and energy-efficient learning. A combined experimental and simulation-based parameter study is presented to find the relevant system and device parameters leading to a compact and robust memristive neuromorphic circuit that can handle association tasks.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="doi">10.1038/s41598-024-57660-4</identifier>
    <identifier type="issn">2045-2322</identifier>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_doi_json">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,4,3]],"date-time":"2024-04-03T01:40:33Z","timestamp":1712108433939},"reference-count":32,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2024,4,2]],"date-time":"2024-04-02T00:00:00Z","timestamp":1712016000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2024,4,2]],"date-time":"2024-04-02T00:00:00Z","timestamp":1712016000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["432009531","434434223 \u2013 CRC 1461","432009531"]},{"DOI":"10.13039\/100007569","name":"Carl-Zeiss-Stiftung","doi-asserted-by":"publisher","award":["Memristive Materials for Neuromorphic Engineering (MemWerk)"]},{"DOI":"10.13039\/501100007826","name":"Technische Universit\u00e4t Ilmenau","doi-asserted-by":"crossref"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci Rep"],"abstract":"&lt;jats:title&gt;Abstract&lt;\/jats:title&gt;&lt;jats:p&gt;Blooming and pruning is one of the most important developmental mechanisms of the biological brain in the first years of life, enabling it to adapt its network structure to the demands of the environment. The mechanism is thought to be fundamental for the development of cognitive skills. Inspired by this, Chialvo and Bak proposed in 1999 a learning scheme that learns from mistakes by eliminating from the initial surplus of synaptic connections those that lead to an undesirable outcome. Here, this idea is implemented in a neuromorphic circuit scheme using CMOS integrated HfO&lt;jats:sub&gt;2&lt;\/jats:sub&gt;-based memristive devices. The implemented two-layer neural network learns in a self-organized manner without positive reinforcement and exploits the inherent variability of the memristive devices. This approach provides hardware, local, and energy-efficient learning. A combined experimental and simulation-based parameter study is presented to find the relevant system and device parameters leading to a compact and robust memristive neuromorphic circuit that can handle association tasks.&lt;\/jats:p&gt;","DOI":"10.1038\/s41598-024-57660-4","type":"journal-article","created":{"date-parts":[[2024,4,2]],"date-time":"2024-04-02T18:01:32Z","timestamp":1712080892000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Blooming and pruning: learning from mistakes with memristive synapses"],"prefix":"10.1038","volume":"14","author":[{"given":"Kristina","family":"Nikiruy","sequence":"first","affiliation":[]},{"given":"Eduardo","family":"Perez","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Baroni","sequence":"additional","affiliation":[]},{"given":"Keerthi Dorai Swamy","family":"Reddy","sequence":"additional","affiliation":[]},{"given":"Stefan","family":"Pechmann","sequence":"additional","affiliation":[]},{"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[]},{"given":"Martin","family":"Ziegler","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2024,4,2]]},"reference":[{"key":"57660_CR1","doi-asserted-by":"publisher","first-page":"555","DOI":"10.1146\/annurev.ne.18.030195.003011","volume":"18","author":"W Singer","year":"1995","unstructured":"Singer, W. &amp; Gray, C. M. Visual feature integration and the temporal correlation hypothesis. Annu. Rev. Neurosci. 18, 555\u2013586 (1995).","journal-title":"Annu. Rev. Neurosci."},{"key":"57660_CR2","volume-title":"The Hippocampus Book","author":"P Andersen","year":"2007","unstructured":"Andersen, P. The Hippocampus Book (Oxford University Press, 2007)."},{"key":"57660_CR3","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.1700849","volume":"3","author":"M Ignatov","year":"2017","unstructured":"Ignatov, M., Ziegler, M., Hansen, M. &amp; Kohlstedt, H. Memristive stochastic plasticity enables mimicking of neural synchrony: Memristive circuit emulates an optical illusion. Sci. Adv. 3, e1700849 (2017).","journal-title":"Sci. Adv."},{"key":"57660_CR4","doi-asserted-by":"publisher","first-page":"97","DOI":"10.1109\/MSP.2019.2933719","volume":"36","author":"B Rajendran","year":"2019","unstructured":"Rajendran, B., Sebastian, A., Schmuker, M., Srinivasa, N. &amp; Eleftheriou, E. Low-power neuromorphic hardware for signal processing applications: A review of architectural and system-level design approaches. IEEE Signal Process. Mag. 36, 97\u2013110. https:\/\/doi.org\/10.1109\/MSP.2019.2933719 (2019).","journal-title":"IEEE Signal Process. Mag."},{"key":"57660_CR5","doi-asserted-by":"publisher","first-page":"163","DOI":"10.1038\/d41586-019-03013-5","volume":"574","author":"D Heaven","year":"2019","unstructured":"Heaven, D. Deep trouble for deep learning. Nature 574, 163\u2013166 (2019).","journal-title":"Nature"},{"key":"57660_CR6","doi-asserted-by":"publisher","first-page":"967","DOI":"10.1016\/j.neuron.2019.08.034","volume":"103","author":"FH Sinz","year":"2019","unstructured":"Sinz, F. H., Pitkow, X., Reimer, J., Bethge, M. &amp; Tolias, A. S. Engineering a less artificial intelligence. Neuron 103, 967\u2013979 (2019).","journal-title":"Neuron"},{"key":"57660_CR7","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-43162-8","volume-title":"Artificial Neural Networks A Practical Course","author":"IN da Silva","year":"2017","unstructured":"da Silva, I. N., Spatti, D. H., Andrade Flauzino, R., Liboni, L. H. B. &amp; dos Reis Alves, S. F. Artificial Neural Networks A Practical Course (Springer, 2017)."},{"key":"57660_CR8","doi-asserted-by":"publisher","first-page":"484","DOI":"10.1038\/nature16961","volume":"529","author":"D Silver","year":"2016","unstructured":"Silver, D. et al. Mastering the game of go with deep neural networks and tree search. Nature 529, 484\u2013489. https:\/\/doi.org\/10.1038\/nature16961 (2016).","journal-title":"Nature"},{"key":"57660_CR9","doi-asserted-by":"publisher","first-page":"49","DOI":"10.1016\/j.bica.2016.11.002","volume":"19","author":"CD James","year":"2017","unstructured":"James, C. D. et al. A historical survey of algorithms and hardware architectures for neural-inspired and neuromorphic computing applications. Biol. Insp. Cognit. Arch. 19, 49\u201364. https:\/\/doi.org\/10.1016\/j.bica.2016.11.002 (2017).","journal-title":"Biol. Insp. Cognit. Arch."},{"key":"57660_CR10","doi-asserted-by":"publisher","first-page":"3000","DOI":"10.1093\/cercor\/bhu095","volume":"25","author":"MP Van Den Heuvel","year":"2015","unstructured":"Van Den Heuvel, M. P. et al. The neonatal connectome during preterm brain development. Cereb. Cortex 25, 3000\u20133013 (2015).","journal-title":"Cereb. Cortex"},{"key":"57660_CR11","doi-asserted-by":"publisher","first-page":"167","DOI":"10.1002\/(SICI)1096-9861(19971020)387:2&lt;167::AID-CNE1&gt;3.0.CO;2-Z","volume":"387","author":"PR Huttenlocher","year":"1997","unstructured":"Huttenlocher, P. R. &amp; Dabholkar, A. S. Regional differences in synaptogenesis in human cerebral cortex. J. Compar. Neurol. 387, 167\u2013178 (1997).","journal-title":"J. Compar. Neurol."},{"key":"57660_CR12","doi-asserted-by":"publisher","first-page":"93","DOI":"10.1016\/j.neuron.2015.09.026","volume":"88","author":"G Dehaene-Lambertz","year":"2015","unstructured":"Dehaene-Lambertz, G. &amp; Spelke, E. S. The infancy of the human brain. Neuron 88, 93\u2013109 (2015).","journal-title":"Neuron"},{"key":"57660_CR13","doi-asserted-by":"publisher","first-page":"195","DOI":"10.1016\/0006-8993(79)90349-4","volume":"163","author":"PR Huttenlocher","year":"1979","unstructured":"Huttenlocher, P. R. Synaptic density in human frontal cortex - developmental changes and effects of aging. Brain Res. 163, 195\u2013205 (1979).","journal-title":"Brain Res."},{"key":"57660_CR14","volume-title":"Discovering the Brain","author":"S Ackerman","year":"1992","unstructured":"Ackerman, S. Discovering the Brain (National Academies Press, 1992)."},{"key":"57660_CR15","doi-asserted-by":"publisher","first-page":"327","DOI":"10.1007\/s11065-010-9148-4","volume":"20","author":"J Stiles","year":"2010","unstructured":"Stiles, J. &amp; Jernigan, T. L. The basics of brain development. Neuropsychol. Rev. 20, 327\u2013348. https:\/\/doi.org\/10.1007\/s11065-010-9148-4 (2010).","journal-title":"Neuropsychol. Rev."},{"key":"57660_CR16","doi-asserted-by":"publisher","first-page":"1137","DOI":"10.1016\/S0306-4522(98)00472-2","volume":"90","author":"DR Chialvo","year":"1999","unstructured":"Chialvo, D. R. &amp; Bak, P. Learning from mistakes. Neuroscience 90, 1137\u20131148 (1999).","journal-title":"Neuroscience"},{"key":"57660_CR17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevE.63.031912","volume":"63","author":"P Bak","year":"2001","unstructured":"Bak, P. &amp; Chialvo, D. R. Adaptive learning by extremal dynamics and negative feedback. Phys. Rev. E 63, 031912 (2001).","journal-title":"Phys. Rev. E"},{"key":"57660_CR18","unstructured":"Brigham, M. Self-Organised Learning in the Chialvo-Bak Model. Master\u2019s thesis, University of Edinburgh (2009)."},{"key":"57660_CR19","doi-asserted-by":"publisher","first-page":"561","DOI":"10.1016\/S0378-4371(03)00147-X","volume":"325","author":"J Wakeling","year":"2003","unstructured":"Wakeling, J. Order-disorder transition in the chialvo-bak \u2018minibrain\u2019 controlled by network geometry. Phys. A 325, 561\u2013569 (2003).","journal-title":"Phys. A"},{"key":"57660_CR20","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevE.105.054306","volume":"105","author":"JP Carbajal","year":"2022","unstructured":"Carbajal, J. P., Martin, D. A. &amp; Chialvo, D. R. Learning by mistakes in memristor networks. Phys. Rev. E 105, 054306. https:\/\/doi.org\/10.1103\/PhysRevE.105.054306 (2022).","journal-title":"Phys. Rev. E"},{"key":"57660_CR21","doi-asserted-by":"publisher","first-page":"5872","DOI":"10.1039\/c3nr01176c","volume":"5","author":"S Gaba","year":"2013","unstructured":"Gaba, S., Sheridan, P., Zhou, J., Choi, S. &amp; Lu, W. Stochastic memristive devices for computing and neuromorphic applications. Nanoscale 5, 5872\u20135878 (2013).","journal-title":"Nanoscale"},{"key":"57660_CR22","doi-asserted-by":"publisher","first-page":"14450","DOI":"10.1038\/s41598-020-71334-x","volume":"10","author":"F Zahari","year":"2020","unstructured":"Zahari, F. et al. Analogue pattern recognition with stochastic switching binary cmos-integrated memristive devices. Sci. Rep. 10, 14450 (2020).","journal-title":"Sci. Rep."},{"key":"57660_CR23","volume-title":"The Organization of Behavior","author":"D Hebb","year":"1949","unstructured":"Hebb, D. The Organization of Behavior (JOHN WILEY and SONS, 1949)."},{"key":"57660_CR24","doi-asserted-by":"publisher","first-page":"404","DOI":"10.1007\/s00422-002-0353-y","volume":"87","author":"W Gerstner","year":"2002","unstructured":"Gerstner, W. &amp; Kistler, W. M. Mathematical formulations of hebbian learning. Biol. Cybern. 87, 404\u2013415 (2002).","journal-title":"Biol. Cybern."},{"key":"57660_CR25","doi-asserted-by":"publisher","first-page":"197","DOI":"10.1109\/TBCAS.2015.2410811","volume":"9","author":"M Ziegler","year":"2015","unstructured":"Ziegler, M., Riggert, C., Hansen, M., Bartsch, T. &amp; Kohlstedt, H. Memristive hebbian plasticity model: Device requirements for the emulation of hebbian plasticity based on memristive devices. IEEE Trans. Biomed. Circuits Syst. 9, 197\u2013206 (2015).","journal-title":"IEEE Trans. Biomed. Circuits Syst."},{"key":"57660_CR26","doi-asserted-by":"publisher","DOI":"10.1063\/1.5042040","volume":"124","author":"M Ziegler","year":"2018","unstructured":"Ziegler, M., Wenger, C., Chicca, E. &amp; Kohlstedt, H. Tutorial: Concepts for closely mimicking biological learning with memristive devices: Principles to emulate cellular forms of learning. J. Appl. Phys. 124, 152003 (2018).","journal-title":"J. Appl. Phys."},{"key":"57660_CR27","doi-asserted-by":"crossref","unstructured":"Ziegler, M. &amp; Kohlstedt, H. Memristive models for the emulation of biological learning. In Memristor Computing Systems, 247\u2013272 (Springer, 2022).","DOI":"10.1007\/978-3-030-90582-8_11"},{"key":"57660_CR28","doi-asserted-by":"publisher","first-page":"64","DOI":"10.1109\/JEDS.2016.2618425","volume":"5","author":"E Perez","year":"2017","unstructured":"Perez, E., Grossi, A., Zambelli, C., Olivo, P. &amp; Wenger, C. Impact of the incremental programming algorithm on the filament conduction in hfo2-based rram arrays. IEEE J. Electron Dev. Soc. 5, 64\u201368. https:\/\/doi.org\/10.1109\/JEDS.2016.2618425 (2017).","journal-title":"IEEE J. Electron Dev. Soc."},{"key":"57660_CR29","doi-asserted-by":"publisher","first-page":"80","DOI":"10.1038\/nature06932","volume":"453","author":"DB Strukov","year":"2008","unstructured":"Strukov, D. B., Snider, G. S., Stewart, D. R. &amp; Williams, R. S. The missing memristor found. Nature 453, 80\u201383 (2008).","journal-title":"Nature"},{"key":"57660_CR30","doi-asserted-by":"crossref","unstructured":"Chua, L. O. &amp; Kang, S. M. Memristive devices and systems. Proceedings of the IEEE64, 209\u2013223 (1976).","DOI":"10.1109\/PROC.1976.10092"},{"key":"57660_CR31","doi-asserted-by":"publisher","first-page":"740","DOI":"10.1109\/JEDS.2019.2931769","volume":"7","author":"E Perez","year":"2019","unstructured":"Perez, E., Zambelli, C., Mahadevaiah, M. K., Olivo, P. &amp; Wenger, C. Toward reliable multi-level operation in rram arrays: Improving post-algorithm stability and assessing endurance\/data retention. IEEE J. Electron Dev. Soc. 7, 740\u2013747 (2019).","journal-title":"IEEE J. Electron Dev. Soc."},{"key":"57660_CR32","doi-asserted-by":"crossref","unstructured":"Kalishettyhalli Mahadevaiah, M. et al. Integration of memristive devices into a 130 nm cmos baseline technology. In Bio-Inspired Information Pathways: From Neuroscience To Neurotronics, 177\u2013190 (Springer International Publishing, 2024).","DOI":"10.1007\/978-3-031-36705-2_7"}],"container-title":["Scientific Reports"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s41598-024-57660-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-024-57660-4","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s41598-024-57660-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,4,2]],"date-time":"2024-04-02T18:03:44Z","timestamp":1712081024000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s41598-024-57660-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,2]]},"references-count":32,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2024,12]]}},"alternative-id":["57660"],"URL":"http:\/\/dx.doi.org\/10.1038\/s41598-024-57660-4","relation":{},"ISSN":["2045-2322"],"issn-type":[{"value":"2045-2322","type":"electronic"}],"subject":["Multidisciplinary"],"published":{"date-parts":[[2024,4,2]]},"assertion":[{"value":"3 November 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"20 March 2024","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"2 April 2024","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"7802"}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="opus_crossrefLicence">https://creativecommons.org/licenses/by/4.0</enrichment>
    <enrichment key="opus_import_origin">crossref</enrichment>
    <enrichment key="opus_doiImportPopulated">SubjectUncontrolled_1,PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PublisherName,TitleMain_1,Language,TitleAbstract_1,TitleParent_1,ArticleNumber,Issue,Volume,PublishedYear,IdentifierIssn,Enrichmentopus_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="Artikelnummer">7802</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Kristina</firstName>
      <lastName>Nikiruy</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Keerthi</firstName>
      <lastName>Dorai Swamy Reddy</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Ziegler</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>33667</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-06-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Cycle-Accurate FPGA Emulation of RRAM Crossbar Array: Efficient Device and Variability Modeling with Energy Consumption Assessment</title>
    <abstract language="eng">Emerging device technologies such as resistive RAM (RRAM) are increasingly recognized in enhancing system performance, particularly in applications demanding extensive vector-matrix multiplications (VMMs) with high parallelism. However, a significant limitation in current electronics design automation (EDA) tools is their lack of support for rapid prototyping, design space exploration, and the integration of inherent process-dependent device variability into system-level simulations, which is essential for assessing system reliability. To address this gap, we introduce a field-programmable gate array (FPGA) based emulation approach for RRAM crossbars featuring cycle-accurate emulations in real time without relying on complex device models. Our approach is based on pre-generated look-up tables (LUTs) to accurately represent the RRAM device behavior. To efficiently model the device variability at the system level, we propose using the multivariate kernel density estimation (KDE) method to augment the measured RRAM data. The proposed emulator allows precise latency determination for matrix mapping and computation operations. Meanwhile, by coupling with the NeuroSim framework, the corresponding energy consumption can be estimated. In addition to facilitating a range of in-depth system assessments, experimental results suggest a remarkable reduction of emulation time compared to the classic behavioral simulation.</abstract>
    <parentTitle language="eng">2024 IEEE 25th Latin American Test Symposium (LATS)</parentTitle>
    <identifier type="doi">10.1109/LATS62223.2024.10534601</identifier>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_doi_json">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,5,30]],"date-time":"2024-05-30T00:27:56Z","timestamp":1717028876029},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,9]],"date-time":"2024-04-09T00:00:00Z","timestamp":1712620800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,9]],"date-time":"2024-04-09T00:00:00Z","timestamp":1712620800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100002701","name":"Ministry of Education","doi-asserted-by":"publisher"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,9]]},"DOI":"10.1109\/lats62223.2024.10534601","type":"proceedings-article","created":{"date-parts":[[2024,5,28]],"date-time":"2024-05-28T17:35:14Z","timestamp":1716917714000},"source":"Crossref","is-referenced-by-count":0,"title":["Cycle-Accurate FPGA Emulation of RRAM Crossbar Array: Efficient Device and Variability Modeling with Energy Consumption Assessment"],"prefix":"10.1109","author":[{"given":"Jianan","family":"Wen","sequence":"first","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Fabian Luis","family":"Vargas","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Fukun","family":"Zhu","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Daniel","family":"Reiser","sequence":"additional","affiliation":[{"name":"University of Rostock,Rostock,Germany"}]},{"given":"Andrea","family":"Baroni","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Markus","family":"Fritscher","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Eduardo","family":"Perez","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Marc","family":"Reichenbach","sequence":"additional","affiliation":[{"name":"University of Rostock,Rostock,Germany"}]},{"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]},{"given":"Milos","family":"Krstic","sequence":"additional","affiliation":[{"name":"IHP - Leibniz-Institut f&amp;#x00FC;r Innovative Mikroelektronik,Frankfurt (Oder),Germany"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1145\/2897937.2898010"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-022-04992-8"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2021.3122343"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.3390\/electronics10060645"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LATS53581.2021.9651789"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405210"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS57931.2023.10198076"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/DFT56152.2022.9962345"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2017.2776980"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/DDECS52668.2021.9417070"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1145\/3611315.3633273"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993491"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-031-40843-4_37"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2018.2889670"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS51556.2021.9401762"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1126\/science.ade3483"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2931769"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2022.3182133"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/78.324744"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/MCAS.2021.3092533"}],"event":{"name":"2024 IEEE 25th Latin American Test Symposium (LATS)","location":"Maceio, Brazil","start":{"date-parts":[[2024,4,9]]},"end":{"date-parts":[[2024,4,12]]}},"container-title":["2024 IEEE 25th Latin American Test Symposium (LATS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10534343\/10534590\/10534601.pdf?arnumber=10534601","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,29]],"date-time":"2024-05-29T04:41:42Z","timestamp":1716957702000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10534601\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,9]]},"references-count":21,"URL":"http:\/\/dx.doi.org\/10.1109\/lats62223.2024.10534601","relation":{},"subject":[],"published":{"date-parts":[[2024,4,9]]}}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">proceedings-article</enrichment>
    <enrichment key="opus_crossrefLicence">https://doi.org/10.15223/policy-029</enrichment>
    <enrichment key="opus_import_origin">crossref</enrichment>
    <enrichment key="opus_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PersonAuthorFirstName_9,PersonAuthorLastName_9,PersonAuthorFirstName_10,PersonAuthorLastName_10,EnrichmentConferenceTitle,EnrichmentConferencePlace,PublisherName,TitleMain_1,TitleParent_1,PublishedYear,Enrichmentopus_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="ConferencePlace">Maceio, Brazil</enrichment>
    <enrichment key="ConferenceTitle">2024 IEEE 25th Latin American Test Symposium (LATS)</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Jianan</firstName>
      <lastName>Wen</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Fabian Luis</firstName>
      <lastName>Vargas</lastName>
    </author>
    <author>
      <firstName>Fukun</firstName>
      <lastName>Zhu</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Reiser</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Fritscher</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Marc</firstName>
      <lastName>Reichenbach</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Milos</firstName>
      <lastName>Krstic</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>34706</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue/>
    <volume>97</volume>
    <type>articler</type>
    <publisherName>Springer Science and Business Media LLC</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-11-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance</title>
    <abstract language="eng">Implementing artificial synapses that emulate the synaptic behavior observed in the brain is one of the most critical requirements for neuromorphic computing. Resistive random-access memories (RRAM) have been proposed as a candidate for artificial synaptic devices. For this applicability, RRAM device performance depends on the technology used to fabricate the metal–insulator–metal (MIM) stack and the technology chosen for the selector device. To analyze these dependencies, the integrated RRAM devices in a 4k-bit array are studied on a 200 mm wafer scale in this work. The RRAM devices are integrated into two different CMOS transistor technologies of IHP, namely 250 nm and 130 nm and the devices are compared in terms of their pristine state current. The devices in 130 nm technology have shown lower number of high pristine state current devices per die in comparison to the 250 nm technology. For the 130 nm technology, the forming voltage is reduced due to the decrease of HfO2   dielectric thickness from 8 nm to 5 nm. Additionally, 5% Al-doped 4 nm HfO2   dielectric displayed a similar reduction in forming voltage and a lower variation in the values. Finally, the multi-level switching between the dielectric layers in 250 nm and 130 nm technologies are compared, where 130 nm showed a more significant number of conductance levels of seven compared to only four levels observed in 250 nm technology.</abstract>
    <parentTitle language="eng">The European Physical Journal B</parentTitle>
    <identifier type="doi">10.1140/epjb/s10051-024-00821-1</identifier>
    <identifier type="issn">1434-6028</identifier>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_doi_json">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,11,21]],"date-time":"2024-11-21T05:26:37Z","timestamp":1732166797204,"version":"3.28.0"},"reference-count":30,"publisher":"Springer Science and Business Media LLC","issue":"11","license":[{"start":{"date-parts":[[2024,11,1]],"date-time":"2024-11-01T00:00:00Z","timestamp":1730419200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2024,11,20]],"date-time":"2024-11-20T00:00:00Z","timestamp":1732060800000},"content-version":"vor","delay-in-days":19,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["434434223-SFB1461"],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002347","name":"Bundesministerium f\u00fcr Bildung und Forschung","doi-asserted-by":"publisher","award":["16ME0092","16ME0831"],"id":[{"id":"10.13039\/501100002347","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Eur. Phys. J. B"],"published-print":{"date-parts":[[2024,11]]},"abstract":"&lt;jats:sec&gt;\n                &lt;jats:title&gt;Abstract&lt;\/jats:title&gt;\n                &lt;jats:p&gt;Implementing artificial synapses that emulate the synaptic behavior observed in the brain is one of the most critical requirements for neuromorphic computing. Resistive random-access memories (RRAM) have been proposed as a candidate for artificial synaptic devices. For this applicability, RRAM device performance depends on the technology used to fabricate the metal\u2013insulator\u2013metal (MIM) stack and the technology chosen for the selector device. To analyze these dependencies, the integrated RRAM devices in a 4k-bit array are studied on a 200\u00a0mm wafer scale in this work. The RRAM devices are integrated into two different CMOS transistor technologies of IHP, namely 250\u00a0nm and 130\u00a0nm and the devices are compared in terms of their pristine state current. The devices in 130\u00a0nm technology have shown lower number of high pristine state current devices per die in comparison to the 250\u00a0nm technology. For the 130\u00a0nm technology, the forming voltage is reduced due to the decrease of &lt;jats:inline-formula&gt;&lt;jats:alternatives&gt;&lt;jats:tex-math&gt;$$\\hbox {HfO}_2$$&lt;\/jats:tex-math&gt;&lt;mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\"&gt;\n                    &lt;mml:msub&gt;\n                      &lt;mml:mtext&gt;HfO&lt;\/mml:mtext&gt;\n                      &lt;mml:mn&gt;2&lt;\/mml:mn&gt;\n                    &lt;\/mml:msub&gt;\n                  &lt;\/mml:math&gt;&lt;\/jats:alternatives&gt;&lt;\/jats:inline-formula&gt; dielectric thickness from 8\u00a0nm to 5\u00a0nm. Additionally, 5% Al-doped 4\u00a0nm &lt;jats:inline-formula&gt;&lt;jats:alternatives&gt;&lt;jats:tex-math&gt;$$\\hbox {HfO}_2$$&lt;\/jats:tex-math&gt;&lt;mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\"&gt;\n                    &lt;mml:msub&gt;\n                      &lt;mml:mtext&gt;HfO&lt;\/mml:mtext&gt;\n                      &lt;mml:mn&gt;2&lt;\/mml:mn&gt;\n                    &lt;\/mml:msub&gt;\n                  &lt;\/mml:math&gt;&lt;\/jats:alternatives&gt;&lt;\/jats:inline-formula&gt; dielectric displayed a similar reduction in forming voltage and a lower variation in the values. Finally, the multi-level switching between the dielectric layers in 250\u00a0nm and 130\u00a0nm technologies are compared, where 130\u00a0nm showed a more significant number of conductance levels of seven compared to only four levels observed in 250\u00a0nm technology.&lt;\/jats:p&gt;\n              &lt;\/jats:sec&gt;&lt;jats:sec&gt;\n                &lt;jats:title&gt;Graphical abstract&lt;\/jats:title&gt;\n                \n              &lt;\/jats:sec&gt;","DOI":"10.1140\/epjb\/s10051-024-00821-1","type":"journal-article","created":{"date-parts":[[2024,11,20]],"date-time":"2024-11-20T10:24:50Z","timestamp":1732098290000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance"],"prefix":"10.1140","volume":"97","author":[{"ORCID":"http:\/\/orcid.org\/0000-0001-5260-7929","authenticated-orcid":false,"given":"Keerthi","family":"Dorai Swamy Reddy","sequence":"first","affiliation":[]},{"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Baroni","sequence":"additional","affiliation":[]},{"given":"Mamathamba Kalishettyhalli","family":"Mahadevaiah","sequence":"additional","affiliation":[]},{"given":"Steffen","family":"Marschmeyer","sequence":"additional","affiliation":[]},{"given":"Mirko","family":"Fraschke","sequence":"additional","affiliation":[]},{"given":"Marco","family":"Lisker","sequence":"additional","affiliation":[]},{"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[]},{"given":"Andreas","family":"Mai","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2024,11,20]]},"reference":[{"issue":"2","key":"821_CR1","doi-asserted-by":"publisher","first-page":"41","DOI":"10.1109\/MCSE.2017.29","volume":"19","author":"TN Theis","year":"2017","unstructured":"T.N. Theis, H.-S.P. Wong, The end of Moore\u2019s law: A new beginning for information technology. Comput. Sci. Eng 19(2), 41\u201350 (2017). https:\/\/doi.org\/10.1109\/MCSE.2017.29","journal-title":"Comput. Sci. Eng"},{"key":"821_CR2","doi-asserted-by":"publisher","unstructured":"H. Amrouch, N. Du, A. Gebregiorgis, S. Hamdioui, I. Polian, Towards Reliable In-Memory Computing:From Emerging Devices to Post-von-Neumann Architectures. In: 2021 IFIP\/IEEE 29th International Conference on Very Large Scale Integration (VLSI-SoC), pp. 1\u20136 (2021). https:\/\/doi.org\/10.1109\/VLSI-SoC53125.2021.9606966","DOI":"10.1109\/VLSI-SoC53125.2021.9606966"},{"key":"821_CR3","doi-asserted-by":"publisher","first-page":"6","DOI":"10.3390\/mi10060368","volume":"10","author":"G Santoro","year":"2019","unstructured":"G. Santoro, G. Turvani, M. Graziano, New logic-in-memory paradigms: an architectural and technological perspective. Micromachines 10, 6 (2019). https:\/\/doi.org\/10.3390\/mi10060368","journal-title":"Micromachines"},{"issue":"2","key":"821_CR4","doi-asserted-by":"publisher","first-page":"2000150","DOI":"10.1002\/aisy.202000150","volume":"3","author":"D Liu","year":"2021","unstructured":"D. Liu, H. Yu, Y. Chai, Low-power computing with neuromorphic engineering. Adv. Intell. Syst. 3(2), 2000150 (2021). https:\/\/doi.org\/10.1002\/aisy.202000150","journal-title":"Adv. Intell. Syst."},{"issue":"1","key":"821_CR5","doi-asserted-by":"publisher","first-page":"89","DOI":"10.1080\/23746149.2016.1259585","volume":"2","author":"GW Burr","year":"2017","unstructured":"G.W. Burr, R.M. Shelby, A. Sebastian, S. Kim, S. Kim, S. Sidler, K. Virwani, M. Ishii, P. Narayanan, A. Fumarola, L.L. Sanches, I. Boybat, M.L. Gallo, K. Moon, J. Woo, H. Hwang, Y. Leblebici, Neuromorphic computing using non-volatile memory. Adv. Phys.: X 2(1), 89\u2013124 (2017). https:\/\/doi.org\/10.1080\/23746149.2016.1259585","journal-title":"Adv. Phys.: X"},{"key":"821_CR6","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/s41467-018-04933-y","volume":"9","author":"I Boybat","year":"2018","unstructured":"I. Boybat, M. Le Gallo, S.R. Nandakumar, T. Moraitis, T. Parnell, T. Tuma, B. Rajendran, Y. Leblebici, A. Sebastian, E. Eleftheriou, Neuromorphic computing with multi-memristive synapses. Nat. Commun. 9, 1 (2018). https:\/\/doi.org\/10.1038\/s41467-018-04933-y","journal-title":"Nat. Commun."},{"key":"821_CR7","doi-asserted-by":"publisher","first-page":"9","DOI":"10.3390\/electronics9091414","volume":"9","author":"J Park","year":"2020","unstructured":"J. Park, Neuromorphic Computing using emerging synaptic devices: A retrospective summary and an outlook. Electronics 9, 9 (2020). https:\/\/doi.org\/10.3390\/electronics9091414","journal-title":"Electronics"},{"key":"821_CR8","doi-asserted-by":"publisher","first-page":"7","DOI":"10.1038\/s41928-020-0435-7","volume":"3","author":"W Zhang","year":"2020","unstructured":"W. Zhang, B. Gao, J. Tang, P. Yao, S. Yu, M.-F. Chang, H.-J. Yoo, H. Qian, H. Wu, Neuro-inspired computing chips. Nat. Electron. 3, 7 (2020). https:\/\/doi.org\/10.1038\/s41928-020-0435-7","journal-title":"Nat. Electron."},{"issue":"9","key":"821_CR9","doi-asserted-by":"publisher","DOI":"10.1063\/5.0149393","volume":"11","author":"JH Yoon","year":"2023","unstructured":"J.H. Yoon, Y.-W. Song, W. Ham, J.-M. Park, J.-Y. Kwon, A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing. APL Mater. 11(9), 090701 (2023). https:\/\/doi.org\/10.1063\/5.0149393","journal-title":"APL Mater."},{"issue":"6","key":"821_CR10","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/6\/063002","volume":"31","author":"D Ielmini","year":"2016","unstructured":"D. Ielmini, Resistive switching memories based on metal oxides: mechanisms, reliability and scaling. Semicond. Sci. Tech. 31(6), 063002 (2016). https:\/\/doi.org\/10.1088\/0268-1242\/31\/6\/063002","journal-title":"Semicond. Sci. Tech."},{"issue":"50","key":"821_CR11","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aade3f","volume":"51","author":"Y Li","year":"2018","unstructured":"Y. Li, Z. Wang, R. Midya, Q. Xia, J.J. Yang, Review of memristor devices in neuromorphic computing: materials sciences and device challenges. J. Phys. D Appl. Phys. 51(50), 503002 (2018). https:\/\/doi.org\/10.1088\/1361-6463\/aade3f","journal-title":"J. Phys. D Appl. Phys."},{"key":"821_CR12","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1186\/s11671-020-03299-9","volume":"15","author":"F Zahoor","year":"2020","unstructured":"F. Zahoor, T.Z. Azni Zulkifli, F.A. Khanday, Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications. Nanoscale Res. Lett. 15, 1 (2020). https:\/\/doi.org\/10.1186\/s11671-020-03299-9","journal-title":"Nanoscale Res. Lett."},{"key":"821_CR13","doi-asserted-by":"publisher","first-page":"23","DOI":"10.1007\/s12200-022-00025-4","volume":"15","author":"H Bao","year":"2022","unstructured":"H. Bao, H. Zhou, J. Li, H. Pei, J. Tian, L. Yang, S. Ren, S. Tong, Y. Li, Y. He, J. Chen, Y. Cai, H. Wu, Q. Liu, Q. Wan, X. Miao, Toward memristive in-memory computing: principles and applications. Front. Optoelectron. 15, 23 (2022). https:\/\/doi.org\/10.1007\/s12200-022-00025-4","journal-title":"Front. Optoelectron."},{"key":"821_CR14","unstructured":"Infineon and TSMC to introduce RRAM technology for automotive AURIX\u2122TC4x product family (Accessed 02 October 2024) doi: https:\/\/www.infineon.com\/cms\/en\/about-infineon\/press\/market-news\/2022\/INFATV202211-031.html"},{"issue":"9","key":"821_CR15","doi-asserted-by":"publisher","first-page":"2205","DOI":"10.1109\/TVLSI.2019.2917764","volume":"27","author":"J Woo","year":"2019","unstructured":"J. Woo, S. Yu, Impact of selector devices in analog RRAM-based crossbar arrays for inference and training of neuromorphic system. IEEE T. VLSI Syst. 27(9), 2205\u20132212 (2019). https:\/\/doi.org\/10.1109\/TVLSI.2019.2917764","journal-title":"IEEE T. VLSI Syst."},{"key":"821_CR16","doi-asserted-by":"publisher","first-page":"168963","DOI":"10.1109\/ACCESS.2019.2954753","volume":"7","author":"B Hajri","year":"2019","unstructured":"B. Hajri, H. Aziza, M.M. Mansour, A. Chehab, Rram device models: A comparative analysis with experimental validation. IEEE Access 7, 168963\u2013168980 (2019). https:\/\/doi.org\/10.1109\/ACCESS.2019.2954753","journal-title":"IEEE Access"},{"key":"821_CR17","first-page":"2753","volume":"68","author":"S Yu","year":"2021","unstructured":"S. Yu, W. Shim, X. Peng, Y. Luo, Rram for compute-in-memory: From inference to training. IEEE T Circ.-I 68, 2753\u20132765 (2021)","journal-title":"IEEE T Circ.-I"},{"issue":"5","key":"821_CR18","doi-asserted-by":"publisher","first-page":"254","DOI":"10.1016\/j.mattod.2015.11.009","volume":"19","author":"T-C Chang","year":"2016","unstructured":"T.-C. Chang, K.-C. Chang, T.-M. Tsai, T.-J. Chu, S.M. Sze, Resistance random access memory. Mater. Today 19(5), 254\u2013264 (2016). https:\/\/doi.org\/10.1016\/j.mattod.2015.11.009","journal-title":"Mater. Today"},{"key":"821_CR19","doi-asserted-by":"publisher","first-page":"2","DOI":"10.3389\/fnano.2021.670762","volume":"3","author":"S Park","year":"2021","unstructured":"S. Park, S. Klett, T. Ivanov, A. Knauer, J. Doell, M. Ziegler, Engineering method for tailoring electrical characteristics in tin\/tiox\/hfox\/au Bi-layer oxide memristive devices. Front. Nanotechnol. 3, 2 (2021). https:\/\/doi.org\/10.3389\/fnano.2021.670762","journal-title":"Front. Nanotechnol."},{"issue":"8","key":"821_CR20","doi-asserted-by":"publisher","DOI":"10.1063\/1.5108650","volume":"7","author":"V Milo","year":"2019","unstructured":"V. Milo, C. Zambelli, P. Olivo, E.K. P\u00e9rez, M. Mahadevaiah, O. Ossorio, C. Wenger, D. Ielmini, Multilevel HfO2-based RRAM devices for low-power neuromorphic networks. APL Mater. 7(8), 081120 (2019). https:\/\/doi.org\/10.1063\/1.5108650","journal-title":"APL Mater."},{"key":"821_CR21","doi-asserted-by":"publisher","first-page":"740","DOI":"10.1109\/JEDS.2019.2931769","volume":"7","author":"E P\u00e9rez","year":"2019","unstructured":"E. P\u00e9rez, C. Zambelli, M.K. Mahadevaiah, P. Olivo, C. Wenger, Toward reliable multi-level operation in RRAM arrays: improving post-algorithm stability and assessing endurance\/data retention. IEEE J. Electron Devi. 7, 740\u2013747 (2019). https:\/\/doi.org\/10.1109\/JEDS.2019.2931769","journal-title":"IEEE J. Electron Devi."},{"key":"821_CR22","doi-asserted-by":"publisher","unstructured":"A. Grossi, E. Perez, C. Zambelli, P. Olivo, E. Miranda, R. Roelofs, J. Woodruff, P. Raisanen, W. Li, M. Givens, I. Costina, M.A. Schubert, C. Wenger, Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1t\u20131r based hfo2 rram devices. Sci. Rep. 8, 11160 (2018). https:\/\/doi.org\/10.1038\/s41598-018-29548-7","DOI":"10.1038\/s41598-018-29548-7"},{"key":"821_CR23","doi-asserted-by":"publisher","unstructured":"P\u00e9rez-Bosch\u00a0Quesada, E., Romero-Zaliz, R., P\u00e9rez, E., Kalishettyhalli\u00a0Mahadevaiah, M., Reuben, J., Schubert, M.A., Jim\u00e9nez-Molinos, F., Rold\u00e1n, J.B., Wenger, C.: Toward reliable compact modeling of multilevel 1t-1r rram devices for neuromorphic systems. Electronics 10(6) (2021) https:\/\/doi.org\/10.3390\/electronics10060645","DOI":"10.3390\/electronics10060645"},{"issue":"6","key":"821_CR24","doi-asserted-by":"publisher","first-page":"750","DOI":"10.1109\/LED.2013.2256101","volume":"34","author":"KG Young-Fisher","year":"2013","unstructured":"K.G. Young-Fisher, G. Bersuker, B. Butcher, A. Padovani, L. Larcher, D. Veksler, D.C. Gilmer, Leakage current-forming voltage relation and oxygen gettering in HfOx RRAM devices. IEEE Electr. Device L. 34(6), 750\u2013752 (2013). https:\/\/doi.org\/10.1109\/LED.2013.2256101","journal-title":"IEEE Electr. Device L."},{"issue":"4","key":"821_CR25","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1149\/09204.0211ecst","volume":"92","author":"MK Mahadevaiah","year":"2019","unstructured":"M.K. Mahadevaiah, M. Lisker, M. Fraschke, S. Marschmeyer, D. Schmidt, C. Wenger, E. Perez, A. Mai, (Invited) Optimized HfO2-based MIM module fabrication for emerging memory applications. ECS Trans. 92(4), 211 (2019). https:\/\/doi.org\/10.1149\/09204.0211ecst","journal-title":"ECS Trans."},{"key":"821_CR26","doi-asserted-by":"publisher","unstructured":"G. Bersuker, B. Butcher, D. Gilmer, P. Kirsch, L. Larcher, A. Padovani. Connecting rram performance to the properties of the hafnia-based dielectrics. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 163\u2013165 (2013). doi: https:\/\/doi.org\/10.1109\/ESSDERC.2013.6818844","DOI":"10.1109\/ESSDERC.2013.6818844"},{"key":"821_CR27","doi-asserted-by":"publisher","unstructured":"E. P\u00e9rez, A. Grossi, C. Zambelli, M.K. Mahadevaiah, P. Olivo, C. Wenger. Temperature impact and programming algorithm for rram based memories. In: 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), pp. 1\u20133 (2018). doi: https:\/\/doi.org\/10.1109\/IMWS-AMP.2018.8457132","DOI":"10.1109\/IMWS-AMP.2018.8457132"},{"issue":"18","key":"821_CR28","doi-asserted-by":"publisher","first-page":"1900657","DOI":"10.1002\/adfm.201900657","volume":"30","author":"F Palumbo","year":"2020","unstructured":"F. Palumbo, C. Wen, S. Lombardo, S. Pazos, F. Aguirre, M. Eizenberg, F. Hui, M. Lanza, A review on dielectric breakdown in thin dielectrics: silicon dioxide, high-k, and layered dielectrics. Adv. Funct. Mater. 30(18), 1900657 (2020). https:\/\/doi.org\/10.1002\/adfm.201900657","journal-title":"Adv. Funct. Mater."},{"issue":"10","key":"821_CR29","doi-asserted-by":"publisher","DOI":"10.1063\/1.4978033","volume":"110","author":"N Sedghi","year":"2017","unstructured":"N. Sedghi, H. Li, I.F. Brunell, K. Dawson, R.J. Potter, Y. Guo, J.T. Gibbon, V.R. Dhanak, W.D. Zhang, J.F. Zhang, J. Robertson, S. Hall, P.R. Chalker, The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Appl. Phys. Lett. 110(10), 102902 (2017). https:\/\/doi.org\/10.1063\/1.4978033","journal-title":"Appl. Phys. Lett."},{"key":"821_CR30","doi-asserted-by":"publisher","first-page":"4","DOI":"10.1186\/s11671-019-3015-x","volume":"14","author":"L Wu","year":"2019","unstructured":"L. Wu, H. Liu, J. Li, S. Wang, X. Wang, A multi-level memristor based on Al-doped HfO2 thin film. Nanoscale Res. Lett. 14, 4 (2019). https:\/\/doi.org\/10.1186\/s11671-019-3015-x","journal-title":"Nanoscale Res. Lett."}],"container-title":["The European Physical Journal B"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1140\/epjb\/s10051-024-00821-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1140\/epjb\/s10051-024-00821-1\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1140\/epjb\/s10051-024-00821-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,11,20]],"date-time":"2024-11-20T11:02:20Z","timestamp":1732100540000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1140\/epjb\/s10051-024-00821-1"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,11]]},"references-count":30,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2024,11]]}},"alternative-id":["821"],"URL":"http:\/\/dx.doi.org\/10.1140\/epjb\/s10051-024-00821-1","relation":{},"ISSN":["1434-6028","1434-6036"],"issn-type":[{"value":"1434-6028","type":"print"},{"value":"1434-6036","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,11]]},"assertion":[{"value":"31 May 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"5 November 2024","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"20 November 2024","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"The authors have no relevant financial or non-financial interests to disclose.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Conflict of interest"}},{"value":"Not applicable.","order":3,"name":"Ethics","group":{"name":"EthicsHeading","label":"Ethics approval and consent to participate"}},{"value":"Not applicable.","order":4,"name":"Ethics","group":{"name":"EthicsHeading","label":"Materials availability"}}],"article-number":"181"}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="opus_crossrefLicence">https://creativecommons.org/licenses/by/4.0</enrichment>
    <enrichment key="opus_import_origin">crossref</enrichment>
    <enrichment key="opus_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PersonAuthorFirstName_9,PersonAuthorLastName_9,PublisherName,TitleMain_1,Language,TitleAbstract_1,TitleParent_1,ArticleNumber,Issue,Volume,PublishedYear,IdentifierIssn,Enrichmentopus_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Keerthi</firstName>
      <lastName>Dorai Swamy Reddy</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Steffen</firstName>
      <lastName>Marschmeyer</lastName>
    </author>
    <author>
      <firstName>Mirko</firstName>
      <lastName>Fraschke</lastName>
    </author>
    <author>
      <firstName>Marco</firstName>
      <lastName>Lisker</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Mai</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>33883</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue/>
    <volume>182</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-07-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis</title>
    <parentTitle language="deu">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="doi">10.1016/j.mssp.2024.108726</identifier>
    <identifier type="issn">1873-4081</identifier>
    <identifier type="issn">1369-8001</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">108726</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>David</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <author>
      <firstName>Antonio</firstName>
      <lastName>Cantudo</lastName>
    </author>
    <author>
      <firstName>Keerthi Dorai</firstName>
      <lastName>Swamy Reddy</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <author>
      <firstName>Max</firstName>
      <lastName>Uhlmann</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>33917</id>
    <completedYear/>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>11</pageNumber>
    <edition/>
    <issue>13</issue>
    <volume>13</volume>
    <type>articlenr</type>
    <publisherName>MDPI</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2024-07-05</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the asymmetry of Resistive Switching Transitions</title>
    <abstract language="eng">In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the switching transitions require less voltage (and thus, less energy) as temperature rises, with the reset process being much more temperature sensitive. The main conduction mechanism in both resistance states is Space-charge-limited Conduction, but the high conductivity state also shows Schottky emission, explaining its temperature dependence. Moreover, the temporal evolution of these transitions reveals clear differences between them, as their current transient response is completely different. While the set is sudden, the reset process development is clearly non-linear, closely resembling a sigmoid function. This asymmetry between switching processes is of extreme importance in the manipulation and control of the multi-level characteristics and has clear implications in the possible applications of resistive switching devices in neuromorphic computing.</abstract>
    <parentTitle language="eng">Electronics</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="doi">10.3390/electronics13132639</identifier>
    <enrichment key="opus.import.date">2024-08-08T13:28:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">deepgreen</enrichment>
    <enrichment key="opus.import.file">attachment; filename=deposit.zip</enrichment>
    <enrichment key="opus.import.checksum">496f305da9c95262969cd80916e9c83a</enrichment>
    <enrichment key="Artikelnummer">2639</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <author>
      <firstName>Guillermo</firstName>
      <lastName>Vinuesa</lastName>
    </author>
    <author>
      <firstName>Héctor</firstName>
      <lastName>García</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Ignacio</firstName>
      <lastName>Íñiguez de la Torre</lastName>
    </author>
    <author>
      <firstName>Tomás</firstName>
      <lastName>González</lastName>
    </author>
    <author>
      <firstName>Salvador</firstName>
      <lastName>Dueñas</lastName>
    </author>
    <author>
      <firstName>Helena</firstName>
      <lastName>Castán</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resistive switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transient</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>temperature dependence</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low power consumption</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
    <collection role="Import" number="import">Import</collection>
  </doc>
  <doc>
    <id>34339</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>19021</pageFirst>
    <pageLast>19033</pageLast>
    <pageNumber>13</pageNumber>
    <edition/>
    <issue>40</issue>
    <volume>16</volume>
    <type>articler</type>
    <publisherName>Royal Society of Chemistry (RSC)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-10-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices</title>
    <abstract language="eng">The drift characteristics of valence change memory (VCM) devices have been analyzed through both experimental analysis and 3D kinetic Monte Carlo (kMC) simulations.</abstract>
    <parentTitle language="eng">Nanoscale</parentTitle>
    <identifier type="doi">10.1039/d4nr02975e</identifier>
    <identifier type="issn">2040-3364</identifier>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_doi_json">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,17]],"date-time":"2024-10-17T11:10:12Z","timestamp":1729163412264,"version":"3.27.0"},"reference-count":59,"publisher":"Royal Society of Chemistry (RSC)","issue":"40","license":[{"start":{"date-parts":[[2024,9,11]],"date-time":"2024-09-11T00:00:00Z","timestamp":1726012800000},"content-version":"vor","delay-in-days":254,"URL":"http:\/\/creativecommons.org\/licenses\/by-nc\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100004837","name":"Ministerio de Ciencia e Innovaci\u00f3n","doi-asserted-by":"publisher","award":["PID2022-139586NB-C44"],"id":[{"id":"10.13039\/501100004837","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["rsc.org"],"crossmark-restriction":true},"short-container-title":["Nanoscale"],"abstract":"&lt;jats:p&gt;The drift characteristics of valence change memory (VCM) devices have been analyzed through both experimental analysis and 3D kinetic Monte Carlo (kMC) simulations.&lt;\/jats:p&gt;","DOI":"10.1039\/d4nr02975e","type":"journal-article","created":{"date-parts":[[2024,9,11]],"date-time":"2024-09-11T08:00:42Z","timestamp":1726041642000},"page":"19021-19033","update-policy":"http:\/\/dx.doi.org\/10.1039\/rsc_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO&lt;sub&gt;2&lt;\/sub&gt;-based RRAM devices"],"prefix":"10.1039","volume":"16","author":[{"ORCID":"http:\/\/orcid.org\/0000-0002-3475-9440","authenticated-orcid":false,"given":"D.","family":"Maldonado","sequence":"first","affiliation":[{"name":"IHP-Leibniz-Institut f\u00fcr innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0002-5205-0398","authenticated-orcid":false,"given":"A.","family":"Baroni","sequence":"additional","affiliation":[{"name":"IHP-Leibniz-Institut f\u00fcr innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0002-1719-605X","authenticated-orcid":false,"given":"S.","family":"Aldana","sequence":"additional","affiliation":[{"name":"Tyndall National Institute, Lee Maltings Complex Dyke Parade, Cork, Cork, T12 R5CP, Ireland"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-5260-7929","authenticated-orcid":false,"given":"K.","family":"Dorai Swamy Reddy","sequence":"additional","affiliation":[{"name":"IHP-Leibniz-Institut f\u00fcr innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-6890-3378","authenticated-orcid":false,"given":"S.","family":"Pechmann","sequence":"additional","affiliation":[{"name":"Chair of Micro- and Nanosystems Technology, Technical University of Munich, Munich, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0003-3698-2635","authenticated-orcid":false,"given":"C.","family":"Wenger","sequence":"additional","affiliation":[{"name":"IHP-Leibniz-Institut f\u00fcr innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany"},{"name":"Brandenburgische Technische Universit\u00e4t (BTU) Cottbus-Senftenberg, 03046 Cottbus, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0003-1662-6457","authenticated-orcid":false,"given":"J. B.","family":"Rold\u00e1n","sequence":"additional","affiliation":[{"name":"Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, Facultad de Ciencias, 18071 Granada, Spain"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-7545-9420","authenticated-orcid":false,"given":"E.","family":"P\u00e9rez","sequence":"additional","affiliation":[{"name":"IHP-Leibniz-Institut f\u00fcr innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany"},{"name":"Brandenburgische Technische Universit\u00e4t (BTU) Cottbus-Senftenberg, 03046 Cottbus, Germany"}]}],"member":"292","published-online":{"date-parts":[[2024]]},"reference":[{"key":"D4NR02975E\/cit1\/1","doi-asserted-by":"publisher","first-page":"eabj9979","DOI":"10.1126\/science.abj9979","volume":"376","author":"Lanza","year":"2022","journal-title":"Science"},{"key":"D4NR02975E\/cit2\/1","doi-asserted-by":"publisher","first-page":"77","DOI":"10.1109\/jproc.2020.3011953","volume":"109","author":"Wainstein","year":"2021","journal-title":"Proc. IEEE"},{"key":"D4NR02975E\/cit3\/1","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2016.7838349","volume-title":"True random number generator using current difference based on a fractional stochastic model in 40 nm embedded ReRAM","author":"Wei","year":"2016","unstructured":"Z.Wei ,  Y.Katoh ,  S.Ogasahara ,  Y.Yoshimoto ,  K.Kawai  and  Y.Ikeda ,  et al. ,  True random number generator using current difference based on a fractional stochastic model in 40 nm embedded ReRAM ,  2016 .  10.1109\/iedm.2016.7838349"},{"key":"D4NR02975E\/cit4\/1","doi-asserted-by":"publisher","first-page":"3141","DOI":"10.3390\/electronics10243141","volume":"10","author":"Romero-Zaliz","year":"2021","journal-title":"Electronics"},{"key":"D4NR02975E\/cit5\/1","doi-asserted-by":"publisher","first-page":"645","DOI":"10.3390\/electronics10060645","volume":"10","author":"Quesada","year":"2021","journal-title":"Electronics"},{"key":"D4NR02975E\/cit6\/1","doi-asserted-by":"publisher","first-page":"1974","DOI":"10.1038\/s41467-024-45670-9","volume":"15","author":"Aguirre","year":"2024","journal-title":"Nat. Commun."},{"key":"D4NR02975E\/cit7\/1","doi-asserted-by":"publisher","first-page":"183","DOI":"10.1039\/c8fd00116b","volume":"213","author":"Wouters","year":"2019","journal-title":"Faraday Discuss."},{"key":"D4NR02975E\/cit8\/1","doi-asserted-by":"publisher","first-page":"3674","DOI":"10.1021\/acsaelm.1c00398","volume":"3","author":"Funck","year":"2021","journal-title":"ACS Appl. Electron. Mater."},{"key":"D4NR02975E\/cit9\/1","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.mser.2014.06.002","volume":"83","author":"Pan","year":"2014","journal-title":"Mater. Sci. Eng., R"},{"key":"D4NR02975E\/cit10\/1","doi-asserted-by":"publisher","first-page":"225106","DOI":"10.1088\/1361-6463\/ab7bb6","volume":"53","author":"Aldana","year":"2020","journal-title":"J. Phys. D: Appl. Phys."},{"key":"D4NR02975E\/cit11\/1","doi-asserted-by":"publisher","first-page":"1172","DOI":"10.1109\/ted.2012.2184545","volume":"59","author":"Guan","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit12\/1","doi-asserted-by":"publisher","first-page":"1998","DOI":"10.1109\/ted.2015.2418114","volume":"62","author":"Padovani","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit13\/1","doi-asserted-by":"publisher","first-page":"155101","DOI":"10.1063\/1.4979915","volume":"121","author":"Padovani","year":"2017","journal-title":"J. Appl. Phys."},{"key":"D4NR02975E\/cit14\/1","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2013.6724682","volume-title":"Connecting the physical and electrical properties of Hafnia-based RRAM","author":"Butcher","year":"2013","unstructured":"B.Butcher ,  G.Bersuker ,  D.CGilmer ,  L.Larcher ,  A.Padovani  and  L.Vandelli ,  et al. ,  Connecting the physical and electrical properties of Hafnia-based RRAM ,  2013 .  10.1109\/iedm.2013.6724682"},{"key":"D4NR02975E\/cit15\/1","doi-asserted-by":"publisher","first-page":"1524","DOI":"10.1109\/ted.2016.2532470","volume":"63","author":"Zhao","year":"2016","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit16\/1","doi-asserted-by":"publisher","first-page":"171","DOI":"10.1109\/jetcas.2016.2547703","volume":"6","author":"Puglisi","year":"2016","journal-title":"IEEE J. Emerg. Sel. Topics Circuits Syst."},{"key":"D4NR02975E\/cit17\/1","doi-asserted-by":"publisher","first-page":"14857","DOI":"10.1021\/acsami.7b19836","volume":"10","author":"Dirkmann","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"D4NR02975E\/cit18\/1","doi-asserted-by":"publisher","first-page":"1181","DOI":"10.1109\/tnano.2018.2867904","volume":"17","author":"Abbaspour","year":"2018","journal-title":"IEEE Trans. Nanotechnol."},{"key":"D4NR02975E\/cit19\/1","doi-asserted-by":"publisher","first-page":"8281","DOI":"10.1021\/acsnano.2c12575","volume":"17","author":"Kaniselvan","year":"2023","journal-title":"ACS Nano"},{"key":"D4NR02975E\/cit20\/1","doi-asserted-by":"publisher","first-page":"124518","DOI":"10.1063\/1.3671565","volume":"110","author":"Bersuker","year":"2011","journal-title":"J. Appl. Phys."},{"key":"D4NR02975E\/cit21\/1","doi-asserted-by":"publisher","first-page":"658","DOI":"10.1007\/s10825-013-0526-z","volume":"12","author":"Larcher","year":"2013","journal-title":"J. Comput. Electron."},{"key":"D4NR02975E\/cit22\/1","doi-asserted-by":"publisher","DOI":"10.1002\/9783527680870","volume-title":"Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications","author":"Ielmini","year":"2015","unstructured":"D.Ielmini  and  R.Waser ,  Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications ,  Wiley-VCH ,  2015 .  10.1002\/9783527680870"},{"key":"D4NR02975E\/cit23\/1","first-page":"30","volume-title":"Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study","author":"Fantini","year":"2013","unstructured":"A.Fantini ,  L.Goux ,  R.Degraeve ,  D.Wouters ,  P.Raghavan  and  G. S.Kar ,  et al. ,  Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study ,  International Memory Workshop ,  2013 , pp.  30\u201333"},{"key":"D4NR02975E\/cit24\/1","doi-asserted-by":"publisher","first-page":"27","DOI":"10.1109\/led.2017.2774604","volume":"39","author":"Grossi","year":"2018","journal-title":"IEEE Electron Device Lett."},{"key":"D4NR02975E\/cit25\/1","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2015.7409648","volume-title":"Intrinsic program instability in HfO2 RRAM and consequences on program algorithms","author":"Fantini","year":"2015","unstructured":"A.Fantini ,  G.Gorine ,  R.Degraeve ,  L.Goux ,  C. Y.Chen  and  A.Redolfi ,  et al. ,  Intrinsic program instability in HfO2 RRAM and consequences on program algorithms ,  2015 .  10.1109\/iedm.2015.7409648"},{"key":"D4NR02975E\/cit26\/1","doi-asserted-by":"publisher","first-page":"740","DOI":"10.1109\/jeds.2019.2931769","volume":"7","author":"Perez","year":"2019","journal-title":"IEEE J. Electron Devices Soc."},{"key":"D4NR02975E\/cit27\/1","doi-asserted-by":"publisher","first-page":"16859","DOI":"10.1039\/d1tc04201g","volume":"9","author":"Gao","year":"2021","journal-title":"J. Mater. Chem. C"},{"key":"D4NR02975E\/cit28\/1","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1016\/j.mee.2013.08.002","volume":"120","author":"Clima","year":"2014","journal-title":"Microelectron. Eng."},{"key":"D4NR02975E\/cit29\/1","doi-asserted-by":"publisher","first-page":"1884","DOI":"10.1109\/ted.2016.2545412","volume":"63","author":"Jiang","year":"2016","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit30\/1","doi-asserted-by":"publisher","first-page":"4090","DOI":"10.1109\/ted.2013.2287755","volume":"60","author":"Huang","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit31\/1","doi-asserted-by":"publisher","first-page":"614","DOI":"10.1109\/ted.2016.2643162","volume":"64","author":"Huang","year":"2017","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit32\/1","doi-asserted-by":"publisher","DOI":"10.1109\/dcis.2016.7845383","volume-title":"A physically based circuit model to account for variability in memristors with resistive switching operation","author":"Picos","year":"2016","unstructured":"R.Picos ,  J. B.Roldan ,  M. M. A.Chawa ,  F.Jimenez-Molinos  and  E.Garcia-Moreno ,  A physically based circuit model to account for variability in memristors with resistive switching operation ,  2016 .  10.1109\/dcis.2016.7845383"},{"key":"D4NR02975E\/cit33\/1","doi-asserted-by":"publisher","first-page":"1261","DOI":"10.3390\/nano11051261","volume":"11","author":"Rold\u00e1n","year":"2021","journal-title":"Nanomaterials"},{"key":"D4NR02975E\/cit34\/1","doi-asserted-by":"publisher","first-page":"115012","DOI":"10.1088\/1361-6641\/abb072","volume":"35","author":"Aldana","year":"2020","journal-title":"Semicond. Sci. Technol."},{"key":"D4NR02975E\/cit35\/1","doi-asserted-by":"publisher","first-page":"27543","DOI":"10.1021\/acsomega.3c03200","volume":"8","author":"Aldana","year":"2023","journal-title":"ACS Omega"},{"key":"D4NR02975E\/cit36\/1","doi-asserted-by":"publisher","first-page":"1422","DOI":"10.1016\/j.microrel.2015.06.090","volume":"55","author":"Raghavan","year":"2015","journal-title":"Microelectron. Reliab."},{"key":"D4NR02975E\/cit37\/1","doi-asserted-by":"publisher","first-page":"340","DOI":"10.1109\/tdmr.2022.3182133","volume":"22","author":"Baroni","year":"2022","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"D4NR02975E\/cit38\/1","doi-asserted-by":"publisher","first-page":"4029","DOI":"10.1109\/ted.2015.2490545","volume":"62","author":"Traore","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"author":"Mahadevaiah","key":"D4NR02975E\/cit39\/1","doi-asserted-by":"publisher","unstructured":"M. K.Mahadevaiah ,  M.Lisker ,  M.Fraschke ,  S.Marschmeyer ,  D.Schmidt  and  C.Wenger ,  et al. , (Invited) Optimized HfO2-Based MIM Module Fabrication for Emerging Memory Applications, Meeting Abstracts\/Meeting Abstracts (Electrochemical Society CD-ROM), 2019, MA2019-02, 1194.  10.1149\/ma2019-02\/25\/1194","DOI":"10.1149\/ma2019-02\/25\/1194"},{"key":"D4NR02975E\/cit40\/1","doi-asserted-by":"publisher","first-page":"51","DOI":"10.1016\/j.sse.2019.03.054","volume":"159","author":"P\u00e9rez","year":"2019","journal-title":"Solid-State Electron."},{"key":"D4NR02975E\/cit41\/1","doi-asserted-by":"publisher","first-page":"7655","DOI":"10.1038\/s41467-023-43542-2","volume":"14","author":"Liu","year":"2023","journal-title":"Nat. Commun."},{"key":"D4NR02975E\/cit42\/1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202401080","volume":"11","author":"Liu","year":"2024","journal-title":"Adv. Sci."},{"key":"D4NR02975E\/cit43\/1","doi-asserted-by":"publisher","first-page":"3482","DOI":"10.1109\/ted.2015.2476825","volume":"62","author":"Guy","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"key":"D4NR02975E\/cit44\/1","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1007\/978-1-4020-5295-8_1","volume-title":"Introduction to the kinetic Monte Carlo method","author":"Voter","year":"2007","unstructured":"A. F.Voter ,  Introduction to the kinetic Monte Carlo method .  Springer eBooks ,  2007 , pp.  1\u201323 .  10.1007\/978-1-4020-5295-8_1"},{"key":"D4NR02975E\/cit45\/1","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2016.7604686","volume-title":"Thermal effect and Compact model in three-dimensional (3D) RRAM arrays","author":"Lu","year":"2016","unstructured":"N. D.Lu ,  Z. W.Zong ,  P. X.Sun ,  L.Li ,  Q.Liu  and  H. B.Lv ,  et al. ,  Thermal effect and Compact model in three-dimensional (3D) RRAM arrays ,  2016 .  10.1109\/SISPAD.2016.7604686"},{"key":"D4NR02975E\/cit46\/1","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2011.5784582","volume-title":"A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction","author":"Vandelli","year":"2011","unstructured":"L.Vandelli ,  A.Padovani ,  L.Larcher ,  G.Bersuker ,  J.Yum  and  P.Pavan ,  A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction ,  2011 .  10.1109\/irps.2011.5784582"},{"key":"D4NR02975E\/cit47\/1","doi-asserted-by":"publisher","DOI":"10.1109\/essderc.2010.5618200","volume-title":"Oxide-based RRAM: Physical based retention projection","author":"Gao","year":"2010","unstructured":"B.Gao ,  J. F.Kang ,  H. W.Zhang ,  B.Sun ,  B.Chen  and  L. F.Liu ,  et al. ,  Oxide-based RRAM: Physical based retention projection ,  2010 .  10.1109\/essderc.2010.5618200"},{"key":"D4NR02975E\/cit48\/1","first-page":"30","volume-title":"Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology","author":"Gao","year":"2009","unstructured":"Z.Gao ,  S.Yu  and  W.Liu ,  et al. ,  Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology ,  Symposium on VLSI Technology ,  2009 , pp.  30\u201331"},{"key":"D4NR02975E\/cit49\/1","doi-asserted-by":"publisher","first-page":"680","DOI":"10.1109\/led.2013.2251602","volume":"34","author":"Padovani","year":"2013","journal-title":"IEEE Electron Device Lett."},{"key":"D4NR02975E\/cit50\/1","doi-asserted-by":"publisher","first-page":"823","DOI":"10.1038\/s41586-023-05759-5","volume":"615","author":"Rao","year":"2023","journal-title":"Nature"},{"key":"D4NR02975E\/cit51\/1","doi-asserted-by":"publisher","first-page":"084318","DOI":"10.1063\/1.2360148","volume":"100","author":"Govindaraj","year":"2006","journal-title":"J. Appl. Phys."},{"key":"D4NR02975E\/cit52\/1","doi-asserted-by":"publisher","first-page":"064008","DOI":"10.1103\/physrevapplied.4.064008","volume":"4","author":"Bradley","year":"2015","journal-title":"Phys. Rev. Appl."},{"key":"D4NR02975E\/cit53\/1","doi-asserted-by":"publisher","first-page":"054422","DOI":"10.1103\/physrevb.65.054422","volume":"65","author":"Rottl\u00e4nder","year":"2002","journal-title":"Phys. Rev. B: Condens. Matter Mater. Phys."},{"key":"D4NR02975E\/cit54\/1","doi-asserted-by":"publisher","first-page":"215103","DOI":"10.1063\/1.4921949","volume":"117","author":"Schroeder","year":"2015","journal-title":"J. Appl. Phys."},{"key":"D4NR02975E\/cit55\/1","doi-asserted-by":"publisher","first-page":"225901","DOI":"10.1103\/physrevlett.89.225901","volume":"89","author":"Foster","year":"2002","journal-title":"Phys. Rev. Lett."},{"key":"D4NR02975E\/cit56\/1","doi-asserted-by":"publisher","first-page":"353","DOI":"10.1109\/led.2010.2040799","volume":"31","author":"Ielmini","year":"2010","journal-title":"IEEE Electron Device Lett."},{"key":"D4NR02975E\/cit57\/1","doi-asserted-by":"publisher","first-page":"3438","DOI":"10.1103\/physrevb.14.3438","volume":"14","author":"Hoshen","year":"1976","journal-title":"Phys. Rev. B: Solid State"},{"key":"D4NR02975E\/cit58\/1","doi-asserted-by":"publisher","first-page":"062201","DOI":"10.1116\/1.5049213","volume":"36","author":"Aldana","year":"2018","journal-title":"J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom."},{"key":"D4NR02975E\/cit59\/1","doi-asserted-by":"publisher","first-page":"335103","DOI":"10.1088\/1361-6463\/aa7939","volume":"50","author":"Aldana","year":"2017","journal-title":"J. Phys. D: Appl. Phys."}],"container-title":["Nanoscale"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/pubs.rsc.org\/en\/content\/articlepdf\/2024\/NR\/D4NR02975E","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,17]],"date-time":"2024-10-17T10:21:27Z","timestamp":1729160487000},"score":1,"resource":{"primary":{"URL":"https:\/\/xlink.rsc.org\/?DOI=D4NR02975E"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024]]},"references-count":59,"journal-issue":{"issue":"40","published-print":{"date-parts":[[2024,10,17]]}},"URL":"http:\/\/dx.doi.org\/10.1039\/d4nr02975e","relation":{},"ISSN":["2040-3364","2040-3372"],"issn-type":[{"type":"print","value":"2040-3364"},{"type":"electronic","value":"2040-3372"}],"subject":[],"published":{"date-parts":[[2024]]}}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="opus_crossrefLicence">http://creativecommons.org/licenses/by-nc/3.0/</enrichment>
    <enrichment key="opus_import_origin">crossref</enrichment>
    <enrichment key="opus_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorIdentifierOrcid_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorIdentifierOrcid_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorIdentifierOrcid_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorIdentifierOrcid_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorIdentifierOrcid_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorIdentifierOrcid_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PersonAuthorIdentifierOrcid_8,PublisherName,TitleMain_1,Language,TitleAbstract_1,TitleParent_1,PageNumber,PageFirst,PageLast,Issue,Volume,PublishedYear,IdentifierIssn,Enrichmentopus_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>David</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Samuel</firstName>
      <lastName>Aldana</lastName>
    </author>
    <author>
      <firstName>Keerthi</firstName>
      <lastName>Dorai Swamy Reddy</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldán</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>34340</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>ACM</publisherName>
    <publisherPlace>New York, NY, USA</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-10-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">LUT-based RRAM model for neural accelerator circuit simulation</title>
    <abstract language="eng">Neural hardware accelerators have been proven to be energy-efficient when used to solve tasks which can be mapped into an artificial neural network (ANN) structure. Resistive random-access memories (RRAMs) are currently under investigation together with several different memristive devices as promising technologies to build such accelerators combined together with complementary metal-oxide semiconductor (CMOS)-technologies in integrated circuits (ICs). While many research groups are actively developing sophisticated physical-based representations to better understand the underlying phenomena characterizing these devices, not much work has been dedicated to exploit the trade-off between simulation time and accuracy in the definition of low computational demanding models suitable to be used at many abstraction layers. Indeed, the design of complex mixed-signal systems as a neural hardware accelerators requires frequent interaction between the application- and the circuit-level that can be enabled only with the support of accurate and fast-simulating devices’ models. In this work, we propose a solution to fill the aforementioned gap with a lookup table (LUT)-based Verilog-A model of IHP’s 1-transistor-1-RRAM (1T1R) cell. In addition, the implementation challenges of conveying the communication between the abstract ANN simulation and the circuital analysis are tackled with a design flow for resistive neural hardware accelerators that features a custom Python wrapper. As a demonstration of the proposed design flow and 1T1R model, an ANN for the MNIST handwritten digit recognition task is assessed with the last layer verified in circuit simulation. The obtained recognition confidence intervals show a considerable discrepancy between the purely application-level PyTorch simulation and the proposed design flow which spans across the abstraction layers down to the circuital analysis.</abstract>
    <parentTitle language="eng">Proceedings of the 18th ACM International Symposium on Nanoscale Architectures</parentTitle>
    <identifier type="doi">10.1145/3611315.3633273</identifier>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_doi_json">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T02:40:55Z","timestamp":1725763255996},"publisher-location":"New York, NY, USA","reference-count":18,"publisher":"ACM","funder":[{"name":"Deutsche Forschungsgemeinschaft (DFG)","award":["434434223 ? SFB 1461 and 441921944"]}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2023,12,18]]},"DOI":"10.1145\/3611315.3633273","type":"proceedings-article","created":{"date-parts":[[2024,1,25]],"date-time":"2024-01-25T18:09:34Z","timestamp":1706206174000},"page":"1-6","update-policy":"http:\/\/dx.doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":1,"title":["LUT-based RRAM Model for Neural Accelerator Circuit Simulation"],"prefix":"10.1145","author":[{"ORCID":"http:\/\/orcid.org\/0009-0002-8625-2040","authenticated-orcid":false,"given":"Max","family":"Uhlmann","sequence":"first","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0002-8117-4357","authenticated-orcid":false,"given":"Tommaso","family":"Rizzi","sequence":"additional","affiliation":[{"name":"Material Research, IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0009-0003-7733-8907","authenticated-orcid":false,"given":"Jianan","family":"Wen","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-5133-7816","authenticated-orcid":false,"given":"Emilio","family":"P\u00e9rez-Bosch Quesada","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0002-4675-9771","authenticated-orcid":false,"given":"Bakr","family":"Al Beattie","sequence":"additional","affiliation":[{"name":"Ruhr University Bochum, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0002-1484-6125","authenticated-orcid":false,"given":"Karlheinz","family":"Ochs","sequence":"additional","affiliation":[{"name":"Ruhr University Bochum, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-7545-9420","authenticated-orcid":false,"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0009-0009-0393-2528","authenticated-orcid":false,"given":"Philip","family":"Ostrovskyy","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-9147-0160","authenticated-orcid":false,"given":"Corrado","family":"Carta","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0003-3698-2635","authenticated-orcid":false,"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0003-2674-2240","authenticated-orcid":false,"given":"Gerhard","family":"Kahmen","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institut fuer innovative Mikroelektronik, Germany"}]}],"member":"320","published-online":{"date-parts":[[2024,1,25]]},"reference":[{"key":"e_1_3_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISCA.2016.13"},{"key":"e_1_3_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2023.3273520"},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/CVPR.2018.00286"},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.1049\/joe.2018.5234"},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.48550\/arXiv.2004.10971"},{"key":"e_1_3_2_1_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/5.726791"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.5281\/zenodo.3333552"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.48550\/arXiv.2003.06471"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/DCIS51330.2020.9268652"},{"key":"e_1_3_2_1_10_1","doi-asserted-by":"publisher","DOI":"10.3390\/electronics10060645"},{"key":"e_1_3_2_1_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3244509"},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2023.3268092"},{"key":"e_1_3_2_1_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-022-04992-8"},{"key":"e_1_3_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/DDECS52668.2021.9417070"},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/DFT56152.2022.9962345"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9063078"},{"key":"e_1_3_2_1_17_1","doi-asserted-by":"publisher","DOI":"10.1109\/ITC44778.2020.9325249"},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.1186\/s11671-020-03299-9"}],"event":{"name":"NANOARCH '23: 18th ACM International Symposium on Nanoscale Architectures","acronym":"NANOARCH '23","location":"Dresden Germany"},"container-title":["Proceedings of the 18th ACM International Symposium on Nanoscale Architectures"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3611315.3633273","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,25]],"date-time":"2024-01-25T18:09:59Z","timestamp":1706206199000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3611315.3633273"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,12,18]]},"references-count":18,"alternative-id":["10.1145\/3611315.3633273","10.1145\/3611315"],"URL":"http:\/\/dx.doi.org\/10.1145\/3611315.3633273","relation":{},"subject":[],"published":{"date-parts":[[2023,12,18]]},"assertion":[{"value":"2024-01-25","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">proceedings-article</enrichment>
    <enrichment key="opus_import_origin">crossref</enrichment>
    <enrichment key="opus_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorIdentifierOrcid_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorIdentifierOrcid_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorIdentifierOrcid_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorIdentifierOrcid_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorIdentifierOrcid_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorIdentifierOrcid_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PersonAuthorIdentifierOrcid_8,PersonAuthorFirstName_9,PersonAuthorLastName_9,PersonAuthorIdentifierOrcid_9,PersonAuthorFirstName_10,PersonAuthorLastName_10,PersonAuthorIdentifierOrcid_10,PersonAuthorFirstName_11,PersonAuthorLastName_11,PersonAuthorIdentifierOrcid_11,EnrichmentConferenceTitle,EnrichmentConferencePlace,PublisherName,PublisherPlace,TitleMain_1,TitleParent_1,PageNumber,PageFirst,PageLast,PublishedYear</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="ConferencePlace">Dresden Germany</enrichment>
    <enrichment key="ConferenceTitle">NANOARCH '23: 18th ACM International Symposium on Nanoscale Architectures</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Max</firstName>
      <lastName>Uhlmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Tommaso</firstName>
      <lastName>Rizzi</lastName>
    </author>
    <author>
      <firstName>Jianan</firstName>
      <lastName>Wen</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Pérez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Bakr</firstName>
      <lastName>Al Beattie</lastName>
    </author>
    <author>
      <firstName>Karlheinz</firstName>
      <lastName>Ochs</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Philip</firstName>
      <lastName>Ostrovskyy</lastName>
    </author>
    <author>
      <firstName>Corrado</firstName>
      <lastName>Carta</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Gerhard</firstName>
      <lastName>Kahmen</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
    <collection role="institutes" number="1122">FG Halbleitertechnologie</collection>
  </doc>
  <doc>
    <id>30603</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>201</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-03-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stochastic switching of memristors and consideration in circuit simulation</title>
    <abstract language="eng">We explore the stochastic switching of oxide-based memristive devices by using the Stanford model for circuit simulation. From measurements, the device-to-device (D2D) and cycle-to-cycle (C2C) statistical variation is extracted. In the low-resistive state (LRS) dispersion by D2D variability is dominant. In the high-resistive state&#13;
(HRS) C2C dispersion becomes the main source of fluctuation. A statistical procedure for the extraction of parameters of the compact model is presented. Thereby, in a circuit simulation the typical D2D and C2C fluctuations of the current–voltage (I-V) characteristics can be emulated by extracting statistical parameters of key model parameters. The statistical distributions of the parameters are used in a Monte Carlo simulation to reproduce the I-V D2D and C2C dispersions which show a good agreement to the measured curves. The results allow the simulation of the on/off current variation for the design of memory cells or can be used to emulate the synaptic behavior of these devices in artificial neural networks realized by a crossbar array of memristors.</abstract>
    <parentTitle language="eng">Solid State Electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <identifier type="doi">10.1016/j.sse.2023.108606</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="RelationnotEU">16ME0092 and 16ES1002</enrichment>
    <enrichment key="BTUfunderNamenotEU">BMBF</enrichment>
    <enrichment key="Artikelnummer">108606</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Kloes</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Carl</firstName>
      <lastName>Bischoff</lastName>
    </author>
    <author>
      <firstName>Jakob</firstName>
      <lastName>Leise</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>variability</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>30620</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2009</pageFirst>
    <pageLast>2014</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>70</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-03-31</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Experimental Assessment of Multilevel RRAM-based Vector-Matrix Multiplication Operations for In-Memory Computing</title>
    <abstract language="eng">Resistive random access memory (RRAM)-based hardware accelerators are playing an important role in the implementation of in-memory computing (IMC) systems for artificial intelligence applications. The latter heavily rely on vector-matrix multiplication (VMM) operations that can be efficiently boosted by RRAM devices. However, the stochastic nature of the RRAM technology is still challenging real hardware implementations. To study the accuracy degradation of consecutive VMM operations, in this work we programed two RRAM subarrays composed of 8x8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels. We analyze their robustness against 1000 identical consecutive VMM operations and monitor the inherent devices’ nonidealities along the test. We finally quantize the accuracy loss of the operations in the digital domain and consider the trade-offs between linearly distributing the resistive states of the RRAM cells and their robustness against nonidealities for future implementation of IMC hardware systems.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="issn">0018-9383</identifier>
    <identifier type="doi">10.1109/TED.2023.3244509</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="RelationnotEU">16ES1002, 16FMD01K, 16FMD02, 16FMD03, 16ME0092</enrichment>
    <enrichment key="BTUfunderNamenotEU">BMBF</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Tommaso</firstName>
      <lastName>Rizzi</lastName>
    </author>
    <author>
      <firstName>Jianan</firstName>
      <lastName>Wen</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ulbricht</lastName>
    </author>
    <author>
      <firstName>Milos</firstName>
      <lastName>Krstic</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vector Matrix Multiplication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>variability</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>31351</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>5</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-09-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing</title>
    <abstract language="eng">The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.</abstract>
    <parentTitle language="eng">21st IEEE Interregional NEWCAS Conference (NEWCAS)</parentTitle>
    <identifier type="doi">10.1109/NEWCAS57931.2023.10198073</identifier>
    <identifier type="isbn">979-8-3503-0024-6</identifier>
    <identifier type="isbn">979-8-3503-0025-3</identifier>
    <identifier type="issn">2474-9672</identifier>
    <identifier type="issn">2472-467X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">23547179</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Max</firstName>
      <lastName>Uhlmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Pérez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Markus</firstName>
      <lastName>Fritscher</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Marc</firstName>
      <lastName>Reichenbach</lastName>
    </author>
    <author>
      <firstName>Philip</firstName>
      <lastName>Ostrovskyy</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Gerhard</firstName>
      <lastName>Kahmen</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In-Memory Computing</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>32224</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>17</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-12-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">TiN/Ti/HfO2/TiN Memristive Devices for Neuromorphic Computing: From Synaptic Plasticity to Stochastic Resonance</title>
    <abstract language="eng">We characterize TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing. We analyze different features that allow the devices to mimic biological synapses and present the models to reproduce analytically some of the data measured. In particular, we have measured the spike timing dependent plasticity behavior in our devices and later on we have modeled it. The spike timing dependent plasticity model was implemented as the learning rule of a spiking neural network that was trained to recognize the MNIST dataset. Variability is implemented and its influence on the network recognition accuracy is considered accounting for the number of neurons in the network and the number of training epochs. Finally, stochastic resonance is studied as another synaptic feature.It is shown that this effect is important and greatly depends on the noise statistical characteristics.</abstract>
    <parentTitle language="eng">Frontiers in Neuroscience</parentTitle>
    <identifier type="issn">1662-4548</identifier>
    <identifier type="doi">10.3389/fnins.2023.1271956</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1271956</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>David</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Antonio</firstName>
      <lastName>Cantudo</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Rocio</firstName>
      <lastName>Romero-Zaliz</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Neural network</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>32225</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>4</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-12-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing</title>
    <abstract language="eng">This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.&#13;
Index Terms—radiation-hard, hardness-by-design, memristive&#13;
devices, Enclosed Layout Transistor, in-memory computing</abstract>
    <parentTitle language="eng">14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023</parentTitle>
    <identifier type="doi">10.1109/CDE58627.2023.10339525</identifier>
    <identifier type="isbn">979-8-3503-0240-0</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Tommaso</firstName>
      <lastName>Rizzi</lastName>
    </author>
    <author>
      <firstName>Aditya</firstName>
      <lastName>Gupta</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <author>
      <firstName>Ruolan</firstName>
      <lastName>Jia</lastName>
    </author>
    <author>
      <firstName>Max</firstName>
      <lastName>Uhlmann</lastName>
    </author>
    <author>
      <firstName>Amelie</firstName>
      <lastName>Hagelauer</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>32226</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>5</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-12-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A comparison of resistive switching parameters for memristive devices with HfO2 monolayers and Al2O3/HfO2 bilayers at the wafer scale</title>
    <abstract language="eng">Memristive devices integrated in 200 mm wafers&#13;
manufactured in 130 nm CMOS technology with two different&#13;
dielectrics, namely, a HfO2 monolayer and an Al2O3/HfO2 bilayer,&#13;
have been measured. The cycle-to-cycle (C2C) and device-todevice (D2D) variability have been analyzed at the wafer scale using different numerical methods to extract the set (Vset) and reset (Vreset) voltages. Some interesting differences between both technologies were found in terms of switching characteristics</abstract>
    <parentTitle language="eng">14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023</parentTitle>
    <identifier type="doi">10.1109/CDE58627.2023.10339417</identifier>
    <identifier type="isbn">979-8-3503-0240-0</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>David</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <author>
      <firstName>Mamathamba Kalishettyhalli</firstName>
      <lastName>Mahadevaiah</lastName>
    </author>
    <author>
      <firstName>Emilio</firstName>
      <lastName>Perez-Bosch Quesada</lastName>
    </author>
    <author>
      <firstName>Antonio</firstName>
      <lastName>Cantudo</lastName>
    </author>
    <author>
      <firstName>Francisco</firstName>
      <lastName>Jimenez-Molinos</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Juan Bautista</firstName>
      <lastName>Roldan</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>36231</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>12</pageLast>
    <pageNumber>12</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace>New York</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-06-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A compact one-transistor-multiple-RRAM characterization platform</title>
    <abstract language="eng">Emerging non-volatile memories (eNVMs) such as resistive random-access memory (RRAM) offer an alternative solution compared to standard CMOS technologies for implementation of in-memory computing (IMC) units used in artificial neural network (ANN) applications. Existing measurement equipment for device characterisation and programming of such eNVMs are usually bulky and expensive. In this work, we present a compact size characterization platform for RRAM devices, including a custom programming unit IC that occupies less than 1 mm2 of silicon area. Our platform is capable of testing one-transistor-one-RRAM (1T1R) as well as one-transistor-multiple-RRAM (1TNR) cells. Thus, to the best knowledge of the authors, this is the first demonstration of an integrated programming interface for 1TNR cells. The 1T2R IMC cells were fabricated in the IHP’s 130 nm BiCMOS technology and, in combination with other parts of the platform, are able to provide more synaptic weight resolution for ANN model applications while simultaneously decreasing the energy consumption by 50 %. The platform can generate programming voltage pulses with a 3.3 mV accuracy. Using the incremental step pulse with verify algorithm (ISPVA) we achieve 5 non-overlapping resistive states per 1T1R device. Based on those 1T1R base states we measure 15 resulting state combinations in the 1T2R cells.</abstract>
    <parentTitle language="eng">IEEE transactions on circuits and systems I : regular papers</parentTitle>
    <identifier type="doi">10.1109/TCSI.2025.3555234</identifier>
    <identifier type="issn">1549-8328</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_import_data">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,4,22]],"date-time":"2025-04-22T04:04:16Z","timestamp":1745294656254,"version":"3.40.4"},"reference-count":0,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["434434223"],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/tcsi.2025.3555234","type":"journal-article","created":{"date-parts":[[2025,4,18]],"date-time":"2025-04-18T17:40:06Z","timestamp":1744998006000},"page":"1-12","source":"Crossref","is-referenced-by-count":0,"title":["A Compact One-Transistor-Multiple-RRAM Characterization Platform"],"prefix":"10.1109","author":[{"ORCID":"https:\/\/orcid.org\/0009-0002-8625-2040","authenticated-orcid":false,"given":"Max","family":"Uhlmann","sequence":"first","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9879-386X","authenticated-orcid":false,"given":"Milosz","family":"Krysik","sequence":"additional","affiliation":[{"name":"Fraunhofer IEG, Cottbus, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-7733-8907","authenticated-orcid":false,"given":"Jianan","family":"Wen","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9862-1419","authenticated-orcid":false,"given":"Max","family":"Frohberg","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5205-0398","authenticated-orcid":false,"given":"Andrea","family":"Baroni","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5260-7929","authenticated-orcid":false,"given":"Keerthi Dorai Swamy","family":"Reddy","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7545-9420","authenticated-orcid":false,"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0393-2528","authenticated-orcid":false,"given":"Philip","family":"Ostrovskyy","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7231-6704","authenticated-orcid":false,"given":"Krzysztof","family":"Piotrowski","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9147-0160","authenticated-orcid":false,"given":"Corrado","family":"Carta","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3698-2635","authenticated-orcid":false,"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2674-2240","authenticated-orcid":false,"given":"Gerhard","family":"Kahmen","sequence":"additional","affiliation":[{"name":"IHP GmbH&amp;#x2013;Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany"}]}],"member":"263","container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/8919\/4358591\/10970101.pdf?arnumber=10970101","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,4,21]],"date-time":"2025-04-21T17:41:28Z","timestamp":1745257288000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10970101\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":0,"URL":"https:\/\/doi.org\/10.1109\/tcsi.2025.3555234","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"type":"print","value":"1549-8328"},{"type":"electronic","value":"1558-0806"}],"subject":[],"published":{"date-parts":[[2025]]}}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="local_crossrefLicence">https://creativecommons.org/licenses/by-nc-nd/4.0/</enrichment>
    <enrichment key="local_import_origin">crossref</enrichment>
    <enrichment key="local_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorIdentifierOrcid_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorIdentifierOrcid_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorIdentifierOrcid_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorIdentifierOrcid_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorIdentifierOrcid_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorIdentifierOrcid_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PersonAuthorIdentifierOrcid_8,PersonAuthorFirstName_9,PersonAuthorLastName_9,PersonAuthorIdentifierOrcid_9,PersonAuthorFirstName_10,PersonAuthorLastName_10,PersonAuthorIdentifierOrcid_10,PersonAuthorFirstName_11,PersonAuthorLastName_11,PersonAuthorIdentifierOrcid_11,PersonAuthorFirstName_12,PersonAuthorLastName_12,PersonAuthorIdentifierOrcid_12,PublisherName,TitleMain_1,TitleParent_1,PageNumber,PageFirst,PageLast,PublishedYear,IdentifierIssn,Enrichmentlocal_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>
      <firstName>Max</firstName>
      <lastName>Uhlmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Milosz</firstName>
      <lastName>Krysik</lastName>
    </author>
    <author>
      <firstName>Jianan</firstName>
      <lastName>Wen</lastName>
    </author>
    <author>
      <firstName>Max</firstName>
      <lastName>Frohberg</lastName>
    </author>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <author>
      <firstName>Keerthi Dorai Swamy</firstName>
      <lastName>Reddy</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Philip</firstName>
      <lastName>Ostrovskyy</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Piotrowski</lastName>
    </author>
    <author>
      <firstName>Corrado</firstName>
      <lastName>Carta</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Gerhard</firstName>
      <lastName>Kahmen</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vector Matrix Multiplication</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
    <collection role="institutes" number="1122">FG Halbleitertechnologie</collection>
  </doc>
  <doc>
    <id>36226</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>9</pageLast>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace>New York</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-06-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Enhancing RRAM reliability : exploring the effects of Al doping on HfO2-based devices</title>
    <abstract language="eng">This study provides a comprehensive evaluation of RRAM devices based on HfO2 and Al-doped HfO2 insulators, focusing on critical performance metrics, including Forming yield, Post-Programming Stability (PPS), Fast Drift, Endurance, and Retention at elevated temperatures (125 ∘C). Aluminum doping significantly enhances device reliability and stability, improving Forming yield, reducing current drift during programming and Retention tests, and minimizing variability during Endurance cycling. While Al5%:HfO2 achieves most of the observed benefits compared to pure HfO2, Al7%:HfO2 offers incremental advantages for scenarios requiring extreme reliability. These findings position Al-doped HfO2 devices as a promising solution for RRAM-based systems in memory and neuromorphic computing, highlighting the potential trade-off between performance gains and increased fabrication complexity. This work underlines the importance of material engineering for optimizing RRAM devices in application-specific contexts.</abstract>
    <parentTitle language="eng">IEEE transactions on device and materials reliability</parentTitle>
    <identifier type="doi">10.1109/TDMR.2025.3581061</identifier>
    <identifier type="issn">1530-4388</identifier>
    <identifier type="issn">1558-2574</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_import_data">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,19]],"date-time":"2025-06-19T18:10:10Z","timestamp":1750356610359,"version":"3.41.0"},"reference-count":0,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"Federal Ministry of Education and Research of Germany","award":["16ME0092"]},{"name":"European Research Council (ERC) under the European Union?s Horizon 2020 research and innovation programme","award":["648635"]},{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"crossref","award":["434434223 - SFB 1461"],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Spoke 1?FutureHPC &amp; BigData? of the Italian Research Center"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Device Mater. Relib."],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/tdmr.2025.3581061","type":"journal-article","created":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T17:40:30Z","timestamp":1750268430000},"page":"1-1","source":"Crossref","is-referenced-by-count":0,"title":["Enhancing RRAM Reliability: Exploring the Effects of Al Doping on HfO2-Based Devices"],"prefix":"10.1109","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5205-0398","authenticated-orcid":false,"given":"Andrea","family":"Baroni","sequence":"first","affiliation":[{"name":"IHP &amp;#x2013; Leibniz-Institut f&amp;#x00FC;r innovative Mikroelektronik, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7545-9420","authenticated-orcid":false,"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[{"name":"IHP &amp;#x2013; Leibniz-Institut f&amp;#x00FC;r innovative Mikroelektronik, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5260-7929","authenticated-orcid":false,"given":"Keerthi Dorai Swamy","family":"Reddy","sequence":"additional","affiliation":[{"name":"IHP &amp;#x2013; Leibniz-Institut f&amp;#x00FC;r innovative Mikroelektronik, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6890-3378","authenticated-orcid":false,"given":"Stefan","family":"Pechmann","sequence":"additional","affiliation":[{"name":"Chair of Micro-and Nanosystems Technology, Technical University of Munich, Munich, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3698-2635","authenticated-orcid":false,"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[{"name":"IHP &amp;#x2013; Leibniz-Institut f&amp;#x00FC;r innovative Mikroelektronik, Frankfurt (Oder), Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1853-1614","authenticated-orcid":false,"given":"Daniele","family":"Ielmini","sequence":"additional","affiliation":[{"name":"Dip. di Elettronica, Informazione e Bioingegneria (DEIB), Politecnico di Milano and IU.NET, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8755-0504","authenticated-orcid":false,"given":"Cristian","family":"Zambelli","sequence":"additional","affiliation":[{"name":"Dip. di Ingegneria, Universit&amp;#x00E0; degli Studi di Ferrara, Ferrara, Italy"}]}],"member":"263","container-title":["IEEE Transactions on Device and Materials Reliability"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/7298\/4358683\/11039729.pdf?arnumber=11039729","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,19]],"date-time":"2025-06-19T17:40:26Z","timestamp":1750354826000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11039729\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":0,"URL":"https:\/\/doi.org\/10.1109\/tdmr.2025.3581061","relation":{},"ISSN":["1530-4388","1558-2574"],"issn-type":[{"type":"print","value":"1530-4388"},{"type":"electronic","value":"1558-2574"}],"subject":[],"published":{"date-parts":[[2025]]}}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="local_crossrefLicence">https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html</enrichment>
    <enrichment key="local_import_origin">crossref</enrichment>
    <enrichment key="local_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorIdentifierOrcid_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorIdentifierOrcid_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorIdentifierOrcid_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorIdentifierOrcid_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorIdentifierOrcid_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorIdentifierOrcid_7,PublisherName,TitleMain_1,TitleParent_1,PageNumber,PageFirst,PageLast,PublishedYear,IdentifierIssn,Enrichmentlocal_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Andrea</firstName>
      <lastName>Baroni</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Keerthi Dorai Swamy</firstName>
      <lastName>Reddy</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Pechmann</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Daniele</firstName>
      <lastName>Ielmini</lastName>
    </author>
    <author>
      <firstName>Cristian</firstName>
      <lastName>Zambelli</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Memristive device</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>36422</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>5</pageLast>
    <pageNumber>5</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace>New York</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-08-18</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">End-to-end design flow for resistive neural accelerators</title>
    <abstract language="eng">Neural hardware accelerators have demonstrated notable energy efficiency in tackling tasks, which can be adapted to artificial neural network (ANN) structures. Research is currently directed towards leveraging resistive random-access memories (RRAMs) among various memristive devices. In conjunction with complementary metal-oxide semiconductor (CMOS) technologies within integrated circuits (ICs), RRAM devices are used to build such neural accelerators. In this study, we present a neural accelerator hardware design and verification flow, which uses a lookup table (LUT)-based Verilog-A model of IHP’s one-transistor-one-RRAM (1T1R) cell. In particular, we address the challenges of interfacing between abstract ANN simulations and circuit analysis by including a tailored Python wrapper into the design process for resistive neural hardware accelerators. To demonstrate our concept, the efficacy of the proposed design flow, we evaluate an ANN for the MNIST handwritten digit recognition task, as well as for the CIFAR-10 image recognition task, with the last layer verified through circuit simulation. Additionally, we implement different versions of a 1T1R model, based on quasi-static measurement data, providing insights on the effect of conductance level spacing and device-to-device variability. The circuit simulations tackle both schematic and physical layout assessment. The resulting recognition accuracies exhibit significant differences between the purely application-level PyTorch simulation and our proposed design flow, highlighting the relevance of circuit-level validation for the design of neural hardware accelerators.</abstract>
    <parentTitle language="eng">IEEE transactions on computer-aided design of integrated circuits and systems</parentTitle>
    <identifier type="doi">10.1109/TCAD.2025.3597237</identifier>
    <identifier type="issn">0278-0070</identifier>
    <identifier type="issn">1937-4151</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_import_data">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,15]],"date-time":"2025-08-15T02:03:05Z","timestamp":1755223385067,"version":"3.43.0"},"reference-count":0,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001659","name":"Deutsche Forschungsgemeinschaft","doi-asserted-by":"publisher","award":["434434223"],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/tcad.2025.3597237","type":"journal-article","created":{"date-parts":[[2025,8,8]],"date-time":"2025-08-08T18:39:56Z","timestamp":1754678396000},"page":"1-1","source":"Crossref","is-referenced-by-count":0,"title":["End-to-End Design Flow for Resistive Neural Accelerators"],"prefix":"10.1109","author":[{"ORCID":"https:\/\/orcid.org\/0009-0002-8625-2040","authenticated-orcid":false,"given":"Max","family":"Uhlmann","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8117-4357","authenticated-orcid":false,"given":"Tommaso","family":"Rizzi","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0009-0003-7733-8907","authenticated-orcid":false,"given":"Jianan","family":"Wen","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5133-7816","authenticated-orcid":false,"given":"Emilio P\u00e9rez-Bosch","family":"Quesada","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4675-9771","authenticated-orcid":false,"given":"Bakr Al","family":"Beattie","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1484-6125","authenticated-orcid":false,"given":"Karlheinz","family":"Ochs","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7545-9420","authenticated-orcid":false,"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0393-2528","authenticated-orcid":false,"given":"Philip","family":"Ostrovskyy","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9147-0160","authenticated-orcid":false,"given":"Corrado","family":"Carta","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3698-2635","authenticated-orcid":false,"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2674-2240","authenticated-orcid":false,"given":"Gerhard","family":"Kahmen","sequence":"additional","affiliation":[]}],"member":"263","container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/43\/6917053\/11121349.pdf?arnumber=11121349","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,11]],"date-time":"2025-08-11T17:43:35Z","timestamp":1754934215000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11121349\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":0,"URL":"https:\/\/doi.org\/10.1109\/tcad.2025.3597237","relation":{},"ISSN":["0278-0070","1937-4151"],"issn-type":[{"value":"0278-0070","type":"print"},{"value":"1937-4151","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025]]}}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="local_crossrefLicence">https://creativecommons.org/licenses/by-nc-nd/4.0/</enrichment>
    <enrichment key="local_import_origin">crossref</enrichment>
    <enrichment key="local_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorIdentifierOrcid_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorIdentifierOrcid_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorIdentifierOrcid_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorIdentifierOrcid_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorIdentifierOrcid_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorIdentifierOrcid_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PersonAuthorIdentifierOrcid_8,PersonAuthorFirstName_9,PersonAuthorLastName_9,PersonAuthorIdentifierOrcid_9,PersonAuthorFirstName_10,PersonAuthorLastName_10,PersonAuthorIdentifierOrcid_10,PersonAuthorFirstName_11,PersonAuthorLastName_11,PersonAuthorIdentifierOrcid_11,PublisherName,TitleMain_1,TitleParent_1,PageNumber,PageFirst,PageLast,PublishedYear,IdentifierIssn,Enrichmentlocal_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>
      <firstName>Max</firstName>
      <lastName>Uhlmann</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Tommaso</firstName>
      <lastName>Rizzi</lastName>
    </author>
    <author>
      <firstName>Jianan</firstName>
      <lastName>Wen</lastName>
    </author>
    <author>
      <firstName>Emilio Pérez-Bosch</firstName>
      <lastName>Quesada</lastName>
    </author>
    <author>
      <firstName>Bakr Al</firstName>
      <lastName>Beattie</lastName>
    </author>
    <author>
      <firstName>Karlheinz</firstName>
      <lastName>Ochs</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Philip</firstName>
      <lastName>Ostrovskyy</lastName>
    </author>
    <author>
      <firstName>Corrado</firstName>
      <lastName>Carta</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Gerhard</firstName>
      <lastName>Kahmen</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
    <collection role="institutes" number="1122">FG Halbleitertechnologie</collection>
  </doc>
  <doc>
    <id>36395</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>74</pageFirst>
    <pageLast>77</pageLast>
    <pageNumber>4</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>New York</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-08-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Evaluating device variability in RRAM-based single- and multi-layer perceptrons</title>
    <abstract language="eng">This work investigates the impact of stochastic weight variations in hardware implementations of artificial neural networks, focusing on a Single-Layer Perceptron and Multi-Layer Perceptrons. A variable neural network model is introduced, applying Gaussian variability to synaptic weights based on an adjustment rate, which controls the proportion of affected weights. By studying how stochastic variations affect accuracy, simulations under device-to-device and cycle-to-cycle variation conditions demonstrate that Single-Layer Perceptrons are more sensitive to weight variations, while Multi-Layer perceptrons show greater robustness. Additionally, stochastic quantization improves the performance of Multi-Layer Perceptrons but has minimal effect on Single-Layer Perceptrons.</abstract>
    <parentTitle language="eng">2025 32nd International Conference on Mixed Design of Integrated Circuits and System (MIXDES)</parentTitle>
    <identifier type="doi">10.23919/MIXDES66264.2025.11092102</identifier>
    <identifier type="isbn">978-83-63578-27-5</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_import_data">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T19:47:07Z","timestamp":1754164027223,"version":"3.41.2"},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,6,26]],"date-time":"2025-06-26T00:00:00Z","timestamp":1750896000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,6,26]],"date-time":"2025-06-26T00:00:00Z","timestamp":1750896000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,6,26]]},"DOI":"10.23919\/mixdes66264.2025.11092102","type":"proceedings-article","created":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T18:38:42Z","timestamp":1753900722000},"page":"74-77","source":"Crossref","is-referenced-by-count":0,"title":["Evaluating Device Variability in RRAM-Based Single- and Multi-Layer Perceptrons"],"prefix":"10.23919","author":[{"given":"Alan","family":"Blumenstein","sequence":"first","affiliation":[{"name":"NanoP, THM,Giessen,Germany"}]},{"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institute for High Performance Microelectronics,Frankfurt (Oder),Germany"}]},{"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[{"name":"IHP - Leibniz Institute for High Performance Microelectronics,Frankfurt (Oder),Germany"}]},{"given":"Nadine","family":"Dersch","sequence":"additional","affiliation":[{"name":"NanoP, THM,Giessen,Germany"}]},{"given":"Alexander","family":"Kloes","sequence":"additional","affiliation":[{"name":"NanoP, THM,Giessen,Germany"}]},{"given":"Benjam\u00edn","family":"I\u00f1\u00edguez","sequence":"additional","affiliation":[{"name":"Universitat Rovira i Virgili,DEEEA,Tarragona,Spain"}]},{"given":"Mike","family":"Schwarz","sequence":"additional","affiliation":[{"name":"NanoP, THM,Giessen,Germany"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ICDSNS62112.2024.10691004"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/ac6a3b"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2023.108606"},{"article-title":"Exploring variability and quantization effects in neuronal networks using the MNIST dataset","volume-title":"accepted to 11th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2025)","author":"Blumenstein","key":"ref4"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2023.108760"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405119"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/MSP.2012.2211477"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2025.3551802"}],"event":{"name":"2025 32nd International Conference on Mixed Design of Integrated Circuits and System (MIXDES)","start":{"date-parts":[[2025,6,26]]},"location":"Szczecin, Poland","end":{"date-parts":[[2025,6,27]]}},"container-title":["2025 32nd International Conference on Mixed Design of Integrated Circuits and System (MIXDES)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11091817\/11091876\/11092102.pdf?arnumber=11092102","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,31]],"date-time":"2025-07-31T18:21:42Z","timestamp":1753986102000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11092102\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,6,26]]},"references-count":8,"URL":"https:\/\/doi.org\/10.23919\/mixdes66264.2025.11092102","relation":{},"subject":[],"published":{"date-parts":[[2025,6,26]]}}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">proceedings-article</enrichment>
    <enrichment key="local_crossrefLicence">https://doi.org/10.15223/policy-029</enrichment>
    <enrichment key="local_import_origin">crossref</enrichment>
    <enrichment key="local_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,EnrichmentConferenceTitle,EnrichmentConferencePlace,PublisherName,TitleMain_1,TitleParent_1,PageNumber,PageFirst,PageLast,PublishedYear,Enrichmentlocal_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="ConferencePlace">Szczecin, Poland</enrichment>
    <enrichment key="ConferenceTitle">2025 32nd International Conference on Mixed Design of Integrated Circuits and System (MIXDES)</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Alan</firstName>
      <lastName>Blumenstein</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Nadine</firstName>
      <lastName>Dersch</lastName>
    </author>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Kloes</lastName>
    </author>
    <author>
      <firstName>Benjamín</firstName>
      <lastName>Iñíguez</lastName>
    </author>
    <author>
      <firstName>Mike</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>37127</id>
    <completedYear/>
    <publishedYear>2026</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>4</pageLast>
    <pageNumber>4</pageNumber>
    <edition/>
    <issue/>
    <volume>232</volume>
    <type>articler</type>
    <publisherName>Elsevier BV</publisherName>
    <publisherPlace>Amsterdam</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-12-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Exploring variability and quantization effects in artificial neural networks using the MNIST dataset</title>
    <abstract language="eng">This paper investigates the impact of introducing variability to trained neural networks and examines the effects of variability and quantization on network accuracy. The study utilizes the MNIST dataset to evaluate various Multi-Layer Perceptron configurations: a baseline model with a Single-Layer Perceptron and an extended model with multiple hidden nodes. The effects of Cycle-to-Cycle variability on network accuracy are explored by varying parameters such as the standard deviation to simulate dynamic changes in network weights. In particular, the performance differences between the Single-Layer Perceptron and the Multi-Layer Perceptron with hidden layers are analyzed, highlighting the network’s robustness to stochastic perturbations. These results provide insights into the effects of quantization and network architecture on accuracy under varying levels of variability.</abstract>
    <parentTitle language="eng">Solid-state electronics</parentTitle>
    <identifier type="doi">10.1016/j.sse.2025.109296</identifier>
    <identifier type="issn">0038-1101</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_import_data">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,12]],"date-time":"2025-12-12T04:46:24Z","timestamp":1765514784172,"version":"3.48.0"},"reference-count":9,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2025,12,5]],"date-time":"2025-12-05T00:00:00Z","timestamp":1764892800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001659","name":"German Research Foundation","doi-asserted-by":"publisher","award":["546680029"],"award-info":[{"award-number":["546680029"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Solid-State Electronics"],"published-print":{"date-parts":[[2026,2]]},"DOI":"10.1016\/j.sse.2025.109296","type":"journal-article","created":{"date-parts":[[2025,12,5]],"date-time":"2025-12-05T00:28:53Z","timestamp":1764894533000},"page":"109296","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Exploring variability and quantization effects in artificial neural networks using the MNIST dataset"],"prefix":"10.1016","volume":"232","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-6543-7022","authenticated-orcid":false,"given":"Alan","family":"Blumenstein","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7545-9420","authenticated-orcid":false,"given":"Eduardo","family":"P\u00e9rez","sequence":"additional","affiliation":[]},{"given":"Christian","family":"Wenger","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0009-0000-5577-6971","authenticated-orcid":false,"given":"Nadine","family":"Dersch","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6485-1512","authenticated-orcid":false,"given":"Alexander","family":"Kloes","sequence":"additional","affiliation":[]},{"given":"Benjam\u00edn","family":"I\u00f1\u00edguez","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5801-3961","authenticated-orcid":false,"given":"Mike","family":"Schwarz","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.sse.2025.109296_b1","series-title":"2024 international conference on data science and network security","first-page":"1","article-title":"Advances in multi-spectral image categorization through convolutional neural networks with an optimized activation function","author":"Raman","year":"2024"},{"issue":"SM","key":"10.1016\/j.sse.2025.109296_b2","doi-asserted-by":"crossref","first-page":"SM1007","DOI":"10.35848\/1347-4065\/ac6a3b","article-title":"In-depth characterization of switching dynamics in amorphous HfO2 memristive arrays for the implementation of synaptic updating rules","volume":"61","author":"Perez","year":"2022","journal-title":"Japan J Appl Phys","ISSN":"https:\/\/id.crossref.org\/issn\/1347-4065","issn-type":"print"},{"issue":"8057","key":"10.1016\/j.sse.2025.109296_b3","doi-asserted-by":"crossref","first-page":"69","DOI":"10.1038\/s41586-025-08742-4","article-title":"Synaptic and neural behaviours in a standard silicon transistor","volume":"640","author":"Pazos","year":"2025","journal-title":"Nature","ISSN":"https:\/\/id.crossref.org\/issn\/1476-4687","issn-type":"print"},{"key":"10.1016\/j.sse.2025.109296_b4","doi-asserted-by":"crossref","DOI":"10.1016\/j.sse.2023.108760","article-title":"Efficient circuit simulation of a memristive crossbar array with synaptic weight variability","volume":"209","author":"Dersch","year":"2023","journal-title":"Solid-State Electron","ISSN":"https:\/\/id.crossref.org\/issn\/0038-1101","issn-type":"print"},{"key":"10.1016\/j.sse.2025.109296_b5","doi-asserted-by":"crossref","DOI":"10.1016\/j.sse.2023.108606","article-title":"Stochastic switching of memristors and consideration in circuit simulation","volume":"201","author":"Kloes","year":"2023","journal-title":"Solid-State Electron","ISSN":"https:\/\/id.crossref.org\/issn\/0038-1101","issn-type":"print"},{"issue":"2","key":"10.1016\/j.sse.2025.109296_b6","doi-asserted-by":"crossref","first-page":"175","DOI":"10.1109\/LED.2016.2646758","article-title":"Reduction of the cell-to-cell variability in Hf1-xAlxOyBased RRAM arrays by using program algorithms","volume":"38","author":"Perez","year":"2017","journal-title":"IEEE Electron Device Lett","ISSN":"https:\/\/id.crossref.org\/issn\/1558-0563","issn-type":"print"},{"key":"10.1016\/j.sse.2025.109296_b7","series-title":"2022 international conference on informatics electrical and electronics","first-page":"1","article-title":"Investigating the influence of layers towards speed and accuracy of neural networks","author":"Haryono","year":"2022"},{"issue":"1","key":"10.1016\/j.sse.2025.109296_b8","article-title":"Device quantization policy in variation-aware in-memory computing design","volume":"12","author":"Chang","year":"2022","journal-title":"Sci Rep","ISSN":"https:\/\/id.crossref.org\/issn\/2045-2322","issn-type":"print"},{"issue":"6","key":"10.1016\/j.sse.2025.109296_b9","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1109\/MSP.2012.2211477","article-title":"The MNIST database of handwritten digit images for machine learning research [Best of the Web]","volume":"29","author":"Deng","year":"2012","journal-title":"IEEE Signal Process Mag","ISSN":"https:\/\/id.crossref.org\/issn\/1053-5888","issn-type":"print"}],"container-title":["Solid-State Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0038110125002412?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0038110125002412?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2025,12,12]],"date-time":"2025-12-12T04:43:21Z","timestamp":1765514601000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0038110125002412"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,2]]},"references-count":9,"alternative-id":["S0038110125002412"],"URL":"https:\/\/doi.org\/10.1016\/j.sse.2025.109296","relation":{},"ISSN":["0038-1101"],"issn-type":[{"type":"print","value":"0038-1101"}],"subject":[],"published":{"date-parts":[[2026,2]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Exploring variability and quantization effects in artificial neural networks using the MNIST dataset","name":"articletitle","label":"Article Title"},{"value":"Solid-State Electronics","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.sse.2025.109296","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2025 The Authors. Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}],"article-number":"109296"}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="local_crossrefLicence">https://www.elsevier.com/tdm/userlicense/1.0/</enrichment>
    <enrichment key="local_import_origin">crossref</enrichment>
    <enrichment key="local_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorIdentifierOrcid_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorIdentifierOrcid_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorIdentifierOrcid_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorIdentifierOrcid_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorIdentifierOrcid_7,PublisherName,TitleMain_1,Language,TitleParent_1,ArticleNumber,Volume,PublishedYear,IdentifierIssn,Enrichmentlocal_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>
      <firstName>Alan</firstName>
      <lastName>Blumenstein</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Nadine</firstName>
      <lastName>Dersch</lastName>
    </author>
    <author>
      <firstName>Alexander</firstName>
      <lastName>Kloes</lastName>
    </author>
    <author>
      <firstName>Benjamín</firstName>
      <lastName>Iñíguez</lastName>
    </author>
    <author>
      <firstName>Mike</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Single-Layer Perceptron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Multi-Layer Perceptron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cycle-to-Cycle variability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Quantization</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stochastic variability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Simulation</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>37936</id>
    <completedYear/>
    <publishedYear>2026</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber>8</pageNumber>
    <edition/>
    <issue/>
    <volume>304</volume>
    <type>articler</type>
    <publisherName>Elsevier BV</publisherName>
    <publisherPlace>Amsterdam</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2026-03-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Variability in HfO₂-based memristors under pulse operation</title>
    <abstract language="eng">We have studied device-to-device variability in TiN/Ti/HfO2/TiN devices under pulse operation. We measured extensively memristive devices that are CMOS integrated with different pulse trains, changing the pulse width and amplitude for groups of more than one hundred devices. The statistical parameters of the measured current were extracted to better understand the device physics under the pulse operation regime. An analytical model to describe synaptic depression and potentiation behavior in the device conductance is introduced, it fits accurately the means of the current data for all the pulse trains under study. In addition, an explanation of the measurements is enlightened with kinetic Monte Carlo simulations that allow the study of resistive switching at the atomic level. Finally, the probability distribution functions of the measured currents in some of the pulses within the pulse series employed are analyzed to extract the probability distribution that works better. A proposal for the implementation of device-to-device variability in the Stanford models is introduced.</abstract>
    <parentTitle language="eng">Microelectronic engineering</parentTitle>
    <identifier type="doi">10.1016/j.mee.2026.112445</identifier>
    <identifier type="issn">0167-9317</identifier>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <enrichment key="opus_doi_flag">true</enrichment>
    <enrichment key="opus_import_data">{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T21:04:35Z","timestamp":1773263075701,"version":"3.50.1"},"reference-count":48,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T00:00:00Z","timestamp":1780272000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T00:00:00Z","timestamp":1780272000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,1,17]],"date-time":"2026-01-17T00:00:00Z","timestamp":1768608000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000780","name":"European Commission","doi-asserted-by":"publisher","award":["CEX2020-001105-M"],"award-info":[{"award-number":["CEX2020-001105-M"]}],"id":[{"id":"10.13039\/501100000780","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001659","name":"German Research Foundation","doi-asserted-by":"publisher","award":["546680029"],"award-info":[{"award-number":["546680029"]}],"id":[{"id":"10.13039\/501100001659","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100008530","name":"European Regional Development Fund","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100008530","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100014440","name":"Gobierno de Espa\u00f1a Ministerio de Ciencia e Innovaci\u00f3n","doi-asserted-by":"publisher","award":["PID2023-149087NB-I00"],"award-info":[{"award-number":["PID2023-149087NB-I00"]}],"id":[{"id":"10.13039\/100014440","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100014440","name":"Gobierno de Espa\u00f1a Ministerio de Ciencia e Innovaci\u00f3n","doi-asserted-by":"publisher","award":["PID2022-139586NB-C44"],"award-info":[{"award-number":["PID2022-139586NB-C44"]}],"id":[{"id":"10.13039\/100014440","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronic Engineering"],"published-print":{"date-parts":[[2026,6]]},"DOI":"10.1016\/j.mee.2026.112445","type":"journal-article","created":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T01:55:07Z","timestamp":1769046907000},"page":"112445","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Variability in HfO2-based memristors under pulse operation"],"prefix":"10.1016","volume":"304","author":[{"given":"D.","family":"Maldonado","sequence":"first","affiliation":[]},{"given":"C.","family":"Acal","sequence":"additional","affiliation":[]},{"given":"H.","family":"Ortiz","sequence":"additional","affiliation":[]},{"given":"F.","family":"Navas-Gomez","sequence":"additional","affiliation":[]},{"given":"A.","family":"Cantudo","sequence":"additional","affiliation":[]},{"given":"C.","family":"Wenger","sequence":"additional","affiliation":[]},{"given":"E.","family":"P\u00e9rez","sequence":"additional","affiliation":[]},{"given":"J.B.","family":"Rold\u00e1n","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.mee.2026.112445_bb0105","article-title":"Memristive technologies for data storage, computation, encryption and radio-frequency communication","author":"Lanza","year":"2022","journal-title":"Science, 376, 6597"},{"key":"10.1016\/j.mee.2026.112445_bb0110","doi-asserted-by":"crossref","first-page":"613","DOI":"10.1038\/s41586-025-08733-5","article-title":"The growing memristor industry","volume":"640","author":"Lanza","year":"2025","journal-title":"Nature"},{"key":"10.1016\/j.mee.2026.112445_bb0045","series-title":"2020 IEEE Symposium on VLSI Circuits, Honolulu, HI, USA","first-page":"1","article-title":"A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range","author":"Chou","year":"2020"},{"key":"10.1016\/j.mee.2026.112445_bb0090","series-title":"2019 IEEE International Solid-State Circuits Conference - (ISSCC), San Francisco, CA, USA","first-page":"212","article-title":"A 3.6 mb 10.1 mb\/mm2 embedded non-volatile re-RAM macro in 22nm FinFET technology with adaptive forming\/set\/reset schemes yielding down to 0.5 V with sensing time of 5ns at 0.7 V","author":"Jain","year":"2019"},{"issue":"1","key":"10.1016\/j.mee.2026.112445_bb0215","doi-asserted-by":"crossref","first-page":"77","DOI":"10.1109\/JPROC.2020.3011953","article-title":"Radiofrequency switches based on emerging resistive memory technologies-a survey","volume":"109","author":"Wainstein","year":"2020","journal-title":"Proc. IEEE"},{"key":"10.1016\/j.mee.2026.112445_bb0220","series-title":"2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA","first-page":"4.8.1","article-title":"True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM","author":"Wei","year":"2016"},{"key":"10.1016\/j.mee.2026.112445_bb0010","first-page":"2014","article-title":"Hardware implementation of memristor-based artificial neural networks","volume":"15","author":"Aguirre","year":"1974","journal-title":"Nat. Commun."},{"key":"10.1016\/j.mee.2026.112445_bb0155","doi-asserted-by":"crossref","first-page":"645","DOI":"10.3390\/electronics10060645","article-title":"Toward reliable compact modeling of multilevel 1T-1R RRAM devices for neuromorphic systems","volume":"10","author":"P\u00e9rez-Bosch","year":"2021","journal-title":"Electronics"},{"key":"10.1016\/j.mee.2026.112445_bb0170","doi-asserted-by":"crossref","first-page":"3141","DOI":"10.3390\/electronics10243141","article-title":"An analysis on the architecture and the size of quantized hardware neural networks based on memristors","volume":"10","author":"Romero-Zaliz","year":"2021","journal-title":"Electronics"},{"key":"10.1016\/j.mee.2026.112445_bb0195","doi-asserted-by":"crossref","first-page":"903","DOI":"10.1126\/science.adi9405","article-title":"Programming memristor arrays with arbitrarily high precision for Analog computing","volume":"383","author":"Song","year":"2024","journal-title":"Science"},{"key":"10.1016\/j.mee.2026.112445_bb0200","series-title":"Memristive Devices for Brain-Inspired Computing","author":"Spiga","year":"2020"},{"key":"10.1016\/j.mee.2026.112445_bb0230","first-page":"45","article-title":"Activity-difference training of deep neural networks using memristor crossbars","volume":"6","author":"Yi","year":"2022","journal-title":"Nat. Electron."},{"key":"10.1016\/j.mee.2026.112445_bb0235","doi-asserted-by":"crossref","first-page":"1205","DOI":"10.1126\/science.ade3483","article-title":"Edge learning using a fully integrated neuro-inspired memristor chip","volume":"381","author":"Zhang","year":"2023","journal-title":"Science"},{"key":"10.1016\/j.mee.2026.112445_bb0190","doi-asserted-by":"crossref","first-page":"681","DOI":"10.1038\/s41563-018-0110-9","article-title":"Monatomic phase change memory","volume":"17","author":"Salinga","year":"2018","journal-title":"Nat. Mater."},{"key":"10.1016\/j.mee.2026.112445_bb0100","article-title":"Basic principles of STT-MRAM cell operation in memory arrays","volume":"46","author":"Khvalkovskiy","year":"2013","journal-title":"J. Phys. D. App. Phys"},{"key":"10.1016\/j.mee.2026.112445_bb0210","series-title":"2016 IEEE International Electron Devices Meeting (IEDM), pp. 11.5.1\u201311.5.4","article-title":"A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs","author":"Trentzsch","year":"2016"},{"key":"10.1016\/j.mee.2026.112445_bb0225","doi-asserted-by":"crossref","DOI":"10.1063\/1.3524521","article-title":"High switching endurance in TaOx Memristive devices","volume":"97","author":"Yang","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mee.2026.112445_bb0205","doi-asserted-by":"crossref","DOI":"10.1088\/0957-4484\/22\/48\/485203","article-title":"Sub-nanosecond switching of a tantalum oxide memristor","volume":"22","author":"Torrezan","year":"2011","journal-title":"Nanotechnology"},{"key":"10.1016\/j.mee.2026.112445_bb0160","doi-asserted-by":"crossref","first-page":"35","DOI":"10.1038\/s41565-018-0302-0","article-title":"Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension","volume":"14","author":"Pi","year":"2019","journal-title":"Nat. Nanotechnol."},{"key":"10.1016\/j.mee.2026.112445_bb0125","doi-asserted-by":"crossref","DOI":"10.1016\/j.chaos.2024.115909","article-title":"A statistical and modeling study on the effects of radiation on Au\/Ta\/ZrO2(Y)\/Pt\/Ti memristive devices","volume":"191","author":"Maldonado","year":"2025","journal-title":"Chaos, Solitons Fractals"},{"key":"10.1016\/j.mee.2026.112445_bb0015","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6463\/ab7bb6","article-title":"Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach","volume":"53","author":"Aldana","year":"2020","journal-title":"J. Phys. D. Appl. Phys."},{"key":"10.1016\/j.mee.2026.112445_bb0065","doi-asserted-by":"crossref","first-page":"3674","DOI":"10.1021\/acsaelm.1c00398","article-title":"Comprehensive model of electron conduction in oxide-based memristive devices","volume":"3","author":"Funck","year":"2021","journal-title":"ACS Appl. Electron. Mater."},{"key":"10.1016\/j.mee.2026.112445_bb0020","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6641\/abb072","article-title":"Kinetic Monte Carlo analysis of data retention in Al:HfO2-based resistive random access memories","volume":"35","author":"Aldana","year":"2020","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/j.mee.2026.112445_bb0035","doi-asserted-by":"crossref","DOI":"10.1063\/1.3671565","article-title":"Metal oxide resistive memory switching mechanism based on conductive filament properties","volume":"110","author":"Bersuker","year":"2011","journal-title":"J. Appl. Phys."},{"issue":"4","key":"10.1016\/j.mee.2026.112445_bb0115","doi-asserted-by":"crossref","first-page":"658","DOI":"10.1007\/s10825-013-0526-z","article-title":"A simulation framework for modeling charge transport and degradation in high-k stacks","volume":"12","author":"Larcher","year":"2013","journal-title":"J. Comput. Electron."},{"key":"10.1016\/j.mee.2026.112445_bb0120","doi-asserted-by":"crossref","first-page":"19021","DOI":"10.1039\/D4NR02975E","article-title":"Kinetic Monte Carlo simulation analysis of the conductance drift in multilevel HfO2-based RRAM devices","volume":"16","author":"Maldonado","year":"2024","journal-title":"Nanoscale"},{"issue":"6","key":"10.1016\/j.mee.2026.112445_bb0135","doi-asserted-by":"crossref","first-page":"1998","DOI":"10.1109\/TED.2015.2418114","article-title":"Microscopic Modeling of HfOx RRAM operations: from forming to switching","volume":"62","author":"Padovani","year":"2015","journal-title":"IEEE Transact. Electron Devices"},{"issue":"15","key":"10.1016\/j.mee.2026.112445_bb0005","doi-asserted-by":"crossref","first-page":"19102","DOI":"10.1021\/acsami.2c22617","article-title":"Holistic variability analysis in resistive switching memories using a two-dimensional variability coefficient","volume":"15","author":"Acal","year":"2023","journal-title":"ACS Appl. Mater. Interfaces"},{"issue":"17","key":"10.1016\/j.mee.2026.112445_bb0055","doi-asserted-by":"crossref","first-page":"14857","DOI":"10.1021\/acsami.7b19836","article-title":"Filament growth and resistive switching in hafnium oxide memristive devices","volume":"10","author":"Dirkmann","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"10.1016\/j.mee.2026.112445_bb0085","series-title":"Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications","author":"Ielmini","year":"2015"},{"key":"10.1016\/j.mee.2026.112445_bb0180","doi-asserted-by":"crossref","first-page":"2200338","DOI":"10.1002\/aisy.202200338","article-title":"Variability in resistive memories","author":"Rold\u00e1n","year":"2023","journal-title":"Adv. Intell. Syst."},{"key":"10.1016\/j.mee.2026.112445_bb0145","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1016\/j.mee.2019.05.004","article-title":"Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN\/Ti\/Al:HfO2\/TiN RRAMs","volume":"214","author":"P\u00e9rez","year":"2019","journal-title":"Microelectron. Eng."},{"issue":"3","key":"10.1016\/j.mee.2026.112445_bb0025","doi-asserted-by":"crossref","first-page":"340","DOI":"10.1109\/TDMR.2022.3182133","article-title":"Low conductance state drift characterization and mitigation in resistive switching memories (RRAM) for artificial neural networks","volume":"22","author":"Baroni","year":"2022","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.mee.2026.112445_bb0060","series-title":"2014 IEEE International Electron Devices Meeting (pp. 7.5.1\u20137.5.4)","article-title":"Intrinsic Program Instability in HfO2 RRAM and consequences on program algorithms","author":"Fantini","year":"2026"},{"key":"10.1016\/j.mee.2026.112445_bb0130","doi-asserted-by":"crossref","DOI":"10.1016\/j.mssp.2025.109668","article-title":"A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices","volume":"196","author":"Maldonado","year":"2025","journal-title":"Mater. Sci. Semicond. Process."},{"key":"10.1016\/j.mee.2026.112445_bb0140","doi-asserted-by":"crossref","first-page":"740","DOI":"10.1109\/JEDS.2019.2931769","article-title":"Toward reliable multi-level operation in RRAM arrays: improving post-algorithm stability and assessing endurance\/data retention","volume":"7","author":"P\u00e9rez","year":"2019","journal-title":"J. Electron Devices Soc."},{"issue":"4","key":"10.1016\/j.mee.2026.112445_bb0185","doi-asserted-by":"crossref","first-page":"619","DOI":"10.1080\/08982112.2023.2168202","article-title":"An approach to non-homogenous phase-type distributions through multiple cut-points","volume":"35","author":"Ruiz-Castro","year":"2023","journal-title":"Qual. Eng."},{"issue":"12","key":"10.1016\/j.mee.2026.112445_bb0040","doi-asserted-by":"crossref","first-page":"4022","DOI":"10.1109\/TED.2015.2492421","article-title":"Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design","volume":"62","author":"Chen","year":"2015","journal-title":"IEEE Trans. Electron Devices"},{"issue":"10","key":"10.1016\/j.mee.2026.112445_bb0075","doi-asserted-by":"crossref","first-page":"1405","DOI":"10.1109\/LED.2012.2210856","article-title":"A SPICE compact model of metal oxide resistive switching memory with variations","volume":"33","author":"Guan","year":"2012","journal-title":"Electron Device Lett. IEEE"},{"key":"10.1016\/j.mee.2026.112445_bb0095","series-title":"IEEE Transactions on Electron Devices","first-page":"1884","article-title":"A Compact Model for Metal\u2013Oxide Resistive Random Access Memory With Experiment Verification","volume":"63","author":"Jiang","year":"2016"},{"issue":"9\u201310","key":"10.1016\/j.mee.2026.112445_bb0165","doi-asserted-by":"crossref","first-page":"1422","DOI":"10.1016\/j.microrel.2015.06.090","article-title":"Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a kinetic Monte Carlo approach","volume":"55","author":"Raghavan","year":"2015","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.mee.2026.112445_bb0070","doi-asserted-by":"crossref","first-page":"11160","DOI":"10.1038\/s41598-018-29548-7","article-title":"Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices","volume":"8","author":"Grossi","year":"2018","journal-title":"Sci. Rep."},{"key":"10.1016\/j.mee.2026.112445_bb0050","doi-asserted-by":"crossref","first-page":"413","DOI":"10.1109\/TDMR.2016.2594119","article-title":"Implications of the incremental pulse and verify algorithm on the forming and switching distributions in RERAM arrays","volume":"16","author":"Crupi","year":"2016","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.mee.2026.112445_bb0150","doi-asserted-by":"crossref","first-page":"SM1007","DOI":"10.35848\/1347-4065\/ac6a3b","article-title":"In-depth characterization of switching dynamics in amorphous HfO2 Memristive arrays for the implementation of synaptic updating rules","volume":"61","author":"Perez","year":"2022","journal-title":"Jpn. J. Appl. Phys."},{"key":"10.1016\/j.mee.2026.112445_bb0175","doi-asserted-by":"crossref","first-page":"1261","DOI":"10.3390\/nano11051261","article-title":"On the thermal models for resistive random access memory circuit simulation","volume":"11","author":"Rold\u00e1n","year":"2021","journal-title":"Nanomaterials"},{"key":"10.1016\/j.mee.2026.112445_bb0030","series-title":"\u201cKolmogorov\u2013Smirnov Test: Overview\u201d, Wiley StatsRef: Statistics Reference Online (eds N. Balakrishnan, T. Colton, B. Everitt, W. Piegorsch, F. Ruggeri and J.L. Teugels)","author":"Berger","year":"2014"},{"key":"10.1016\/j.mee.2026.112445_bib236","series-title":"Modern Applied Statistics with S","author":"Venables","year":"2002"},{"issue":"11","key":"10.1016\/j.mee.2026.112445_bb0080","doi-asserted-by":"crossref","first-page":"3482","DOI":"10.1109\/TED.2015.2476825","article-title":"Investigation of forming, SET, and data retention of conductive-bridge random-access memory for stack optimization","volume":"62","author":"Guy","year":"2015","journal-title":"IEEE Transact. Electron Devices"}],"container-title":["Microelectronic Engineering"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0167931726000018?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0167931726000018?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T05:02:26Z","timestamp":1773205346000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0167931726000018"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,6]]},"references-count":48,"alternative-id":["S0167931726000018"],"URL":"https:\/\/doi.org\/10.1016\/j.mee.2026.112445","relation":{},"ISSN":["0167-9317"],"issn-type":[{"value":"0167-9317","type":"print"}],"subject":[],"published":{"date-parts":[[2026,6]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Variability in HfO2-based memristors under pulse operation","name":"articletitle","label":"Article Title"},{"value":"Microelectronic Engineering","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mee.2026.112445","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 The Authors. Published by Elsevier B.V.","name":"copyright","label":"Copyright"}],"article-number":"112445"}}</enrichment>
    <enrichment key="opus_crossrefDocumentType">journal-article</enrichment>
    <enrichment key="local_crossrefLicence">https://www.elsevier.com/tdm/userlicense/1.0/</enrichment>
    <enrichment key="local_import_origin">crossref</enrichment>
    <enrichment key="local_doiImportPopulated">PersonAuthorFirstName_1,PersonAuthorLastName_1,PersonAuthorFirstName_2,PersonAuthorLastName_2,PersonAuthorFirstName_3,PersonAuthorLastName_3,PersonAuthorFirstName_4,PersonAuthorLastName_4,PersonAuthorFirstName_5,PersonAuthorLastName_5,PersonAuthorFirstName_6,PersonAuthorLastName_6,PersonAuthorFirstName_7,PersonAuthorLastName_7,PersonAuthorFirstName_8,PersonAuthorLastName_8,PublisherName,TitleMain_1,Language,TitleParent_1,ArticleNumber,Volume,PublishedYear,IdentifierIssn,Enrichmentlocal_crossrefLicence</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Referiert">Beitrag ist referiert / Article peer-reviewed</enrichment>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>
      <firstName>D.</firstName>
      <lastName>Maldonado</lastName>
    </author>
    <submitter>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </submitter>
    <author>
      <firstName>C.</firstName>
      <lastName>Acal</lastName>
    </author>
    <author>
      <firstName>H.</firstName>
      <lastName>Ortiz</lastName>
    </author>
    <author>
      <firstName>F.</firstName>
      <lastName>Navas-Gomez</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Cantudo</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Eduardo</firstName>
      <lastName>Pérez</lastName>
    </author>
    <author>
      <firstName>J.B.</firstName>
      <lastName>Roldán</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resistive switching memory</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Variability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Distribution function</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pulse operation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Memristive device</value>
    </subject>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
</export-example>
