<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>32041</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>7</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-11-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques</title>
    <abstract language="eng">GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="url">https://pubs.aip.org/aip/apl/article/123/8/081109/2907921</identifier>
    <identifier type="doi">10.1063/5.0166799</identifier>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">081109</enrichment>
    <enrichment key="Publikationsweg">Open Access</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Shuyu</firstName>
      <lastName>Wen</lastName>
    </author>
    <submitter>
      <firstName>Katrin</firstName>
      <lastName>Gregor</lastName>
    </submitter>
    <author>
      <firstName>Mohd Saif</firstName>
      <lastName>Shaikh</lastName>
    </author>
    <author>
      <firstName>Oliver</firstName>
      <lastName>Steuer</lastName>
    </author>
    <author>
      <firstName>Slawomir</firstName>
      <lastName>Prucnal</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Grenzer</lastName>
    </author>
    <author>
      <firstName>René</firstName>
      <lastName>Hübner</lastName>
    </author>
    <author>
      <firstName>Marcin</firstName>
      <lastName>Turek</lastName>
    </author>
    <author>
      <firstName>Krzysztof</firstName>
      <lastName>Pyszniak</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Reiter</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Yordan M.</firstName>
      <lastName>Georgiev</lastName>
    </author>
    <author>
      <firstName>Manfred</firstName>
      <lastName>Helm</lastName>
    </author>
    <author>
      <firstName>Shaoteng</firstName>
      <lastName>Wu</lastName>
    </author>
    <author>
      <firstName>Jun-Wei</firstName>
      <lastName>Luo</lastName>
    </author>
    <author>
      <firstName>Shengqiang</firstName>
      <lastName>Zhou</lastName>
    </author>
    <author>
      <firstName>Yonder</firstName>
      <lastName>Berencén</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electric currents</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photodetectors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>C-MOS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electromagnetic radiation detectors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Crystal structure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Alloys</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ion implantation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ion beam analysis</value>
    </subject>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
</export-example>
