<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>10408</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>223</pageFirst>
    <pageLast>226</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology</title>
    <abstract language="eng">We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.</abstract>
    <parentTitle language="eng">Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003</parentTitle>
    <identifier type="isbn">0-7803-7833-4</identifier>
    <identifier type="doi">10.1109/GAAS.2003.1252399</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10411</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>351</pageFirst>
    <pageLast>356</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line</title>
    <abstract language="eng">DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT  and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties</abstract>
    <parentTitle language="eng">IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000</parentTitle>
    <identifier type="isbn">0-7803-6258-6</identifier>
    <identifier type="doi">10.1109/ISCS.2000.947181</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Richard</firstName>
      <lastName>Lossy</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>K.</firstName>
      <lastName>Kohler</lastName>
    </author>
    <author>
      <firstName>H.</firstName>
      <lastName>Obloh</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10415</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1551</pageFirst>
    <pageLast>1554</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz</title>
    <abstract language="eng">Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.</abstract>
    <parentTitle language="eng">2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2001.967198</identifier>
    <identifier type="isbn">0-7803-6538-0</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Holger</firstName>
      <lastName>Kuhnert</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10416</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>839</pageFirst>
    <pageLast>842</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">38 GHz push-push GaAs-HBT MMIC oscillator</title>
    <abstract language="eng">Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.</abstract>
    <parentTitle language="eng">2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention &amp; Trade Center, Seattle, Washington, vol. 2</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2002.1011761</identifier>
    <identifier type="isbn">0-7803-7239-5</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Holger</firstName>
      <lastName>Kuhnert</lastName>
    </author>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10417</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>903</pageFirst>
    <pageLast>906</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz</title>
    <abstract language="eng">Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.</abstract>
    <parentTitle language="eng">2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2003.1212515</identifier>
    <identifier type="isbn">0-7803-7695-1</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10427</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>239</pageFirst>
    <pageLast>242</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Institute of Physics Publ.</publisherName>
    <publisherPlace>Bristol [u.a.]</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fabrication and Electrical Performance of Oscillators in GaAs/GaInP-HBT MMIC Technology up to 40 GHz</title>
    <parentTitle language="eng">29th International Symposium on Compound Semiconductors (ISCS), Lausanne/Switzerland, 2002</parentTitle>
    <identifier type="isbn">0-7503-0942-3</identifier>
    <identifier type="isbn">978-07503-0942-4</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>F.</firstName>
      <lastName>Brunner</lastName>
    </author>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
</export-example>
