<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>10426</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1220</pageFirst>
    <pageLast>1224</pageLast>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>22</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High energy irradiation effects on AlGaN/GaN HFET devices</title>
    <abstract language="eng">The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I – V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.</abstract>
    <parentTitle language="eng">Semiconductor Science and Technology</parentTitle>
    <identifier type="doi">10.1088/0268-1242/22/11/007</identifier>
    <identifier type="issn">0268-1242</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>G.</firstName>
      <lastName>Sonia</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>E.</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>F.</firstName>
      <lastName>Brunner</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Denker</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Lossy</lastName>
    </author>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Opitz-Coutureau</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Mai</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Schmidt</lastName>
    </author>
    <author>
      <firstName>U.</firstName>
      <lastName>Zeimer</lastName>
    </author>
    <author>
      <firstName>L.</firstName>
      <lastName>Wang</lastName>
    </author>
    <author>
      <firstName>K.</firstName>
      <lastName>Baskar</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Weyers</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>Günther</firstName>
      <lastName>Tränkle</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
</export-example>
