<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>17127</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Multiple Auger Decay at resonant photo-excitation in carbon thin films</title>
    <abstract language="eng">We use resonant photoemission at the C1s edge to study the electronic structure of HOPG, graphene flakes and monolayer graphene. We find remarkable differences in the profile of the Auger decay channels, which we attribute to an additional multiple-Auger with a three-hole final&#13;
state. A prerequisite for the appearance of this decay mechanism is the existence of localized excitonic states, which cause the appearance of the multiple Auger decay. Defects (pits, holes, steps and kinks) can act as localized excitonic states. We use those effects to identify the existence and the quantity of such defect states within the pi*-band regime in carbon thin films, because the intensity of the three-hole Auger decay is varying with the defect density of the carbon films.&#13;
The defect-excitonic states can be either localized in the band-gap at the M-point or in case of surface defects like steps, kinks or pits even at the K-point by losing the pure sp2 character of the films. We find that the appearance of the multiple Auger decay is different for multilayer and monolayer graphene. In particular the interaction of impurities leads to broadening of the C1s core levels. The three-hole Auger decay spectroscopy is a new method to detect such contaminations with a high sensitivity.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/hl/session/52/contribution/6?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Städter</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Auger decay</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multiple decay</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>carbon thin films</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17129</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fano-Profiles in HOPG and graphene flakes</title>
    <abstract language="eng">We investigated the electronic structure of the valence and conduction band of HOPG by 2D resonant photoemission spectroscopy. Our aim is to understand the electronic structure of defects and inhomogeneities in graphene and related materials in more detail. From our measurements we find that the transition from the sigma-band to the pi*-band at the M-point shows a characteristic Fano-Profile. A Fano-Profile occurs as the result of the interference of the band to band transition and a parallel transition to a discrete energy level within the band gap. The theory of Fano enables us to determine the energetic location of these discrete level. It is found to be several meV above the Fermi-Energy. Additional measurements on graphene flakes lead to similar results for the sigma- to pi*-band transition and the location of the discrete energy state. With this we not only can determine the energetic states of defects but also get a better understanding of the origin of the Fano profile which is a particular detail of the resonant absorption process.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/hl/session/52/contribution/5?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Städter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fano profiles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Graphene</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HOPG</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
