<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>22448</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3640</pageFirst>
    <pageLast>3648</pageLast>
    <pageNumber/>
    <edition/>
    <issue>20</issue>
    <volume>11</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-11-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Room temperature atomic layer deposited Al₂O₃ improves perovskite solar cells efficiency over time</title>
    <abstract language="eng">Electrical characterisation of perovskite solar cells consisting of room-temperature atomic-layer-deposited aluminium oxide (RT-ALD-Al₂O₃) film on top of a methyl ammonium lead triiodide (CH₃NH₃PbI₃) absorber showed excellent stability of the power conversion efficiency (PCE) over along time. Under the same environmental conditions (for 355 d), the average PCE of solar cells without the ALD layer decreased from 13.6 to 9.6 %, whereas that of solar cells containing 9 ALD cycles of depositing RT-ALD-Al₂O₃on top of CH₃NH₃PbI₃ increased from 9.4 to 10.8 %. Spectromicroscopic investigations of the ALD/perovskite interface revealed that the maximum PCE with the ALD layer is obtained when the so-called perovskite cleaning process induced by ALD precursors is complete. The PCE enhancement over time is probably related to a self-healing process induced by the RT-ALD-Al₂O₃ film. This work may provide a new direction for further improving the long-term stability and performance of perovskite solar cells.</abstract>
    <parentTitle language="eng">ChemSusChem</parentTitle>
    <identifier type="doi">10.1002/cssc.201801434</identifier>
    <identifier type="issn">1864-5631</identifier>
    <identifier type="issn">1864-564X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kus</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Iva</firstName>
      <lastName>Matolínová</lastName>
    </author>
    <author>
      <firstName>Steve</firstName>
      <lastName>Albrecht</lastName>
    </author>
    <author>
      <firstName>Vladimir</firstName>
      <lastName>Matolin</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Perovskite Solar Cells (PSCs)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>long time stabilty</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field-emission scanning electron microscopy (FESEM)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>22977</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>44018</pageFirst>
    <pageLast>44032</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-12-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Natural Sugar-Assisted, Chemically Reinforced, Highly Durable Piezoorganic Nanogenerator with Superior Power Density for Self-Powered Wearable Electronics</title>
    <abstract language="eng">Natural piezoelectric materials are of increasing interest, particularly for applications in biocompatible, implantable, and flexible electronic devices. In this paper, we introduce a cost-effective, easily available natural piezoelectric material, that is, sugar in the field of wearable piezoelectric nanogenerators (PNGs) where low electrical output, biocompatibility, and performance durability are still critical issues. We report on a high-performance piezoorganic nanogenerator (PONG) based on the hybridization of sugar-encapsulated polyvinylidenefluoride (PVDF) nanofiber webs (SGNFW). We explore the crucial role of single-crystal sugar having a fascinating structure along with the synergistic enhancement of piezoelectricity during nanoconfinement of sugar-interfaced macromolecular PVDF chains. As a consequence, the SGNFW-based PONG exhibits outstanding electricity generation capability (e.g.,∼100 V under 10 kPa human finger impact and maximum power density of 33 mW/m2) in combination with sensitivity to abundantly available different mechanical sources (such as wind flow, vibration, personal electronics, and acoustic vibration). Consequently, it opens up suitability in multifunctional self-powered wearable sensor designs for realistic implementation. In addition, commercially available capacitors are charged up effectively by the PONG because of its rapid energy storage capability. The high performance of the PONG not only offers“battery-free”energy generation (several portable units of light-emitting diodes and a liquid crystal display screen are powered up without using external storage) but also promises its use in wireless signal transmitting systems, which widens the potential in personal health care monitoring. Furthermore, owing to the geometrical stress confinement effect, the PONG is proven to be a highly durable power-generating device validated by stability test over 10 weeks. Therefore, the organic nanogenerator would be a convenient solution for portable personal electronic devices that are expected to operate in a self-powered manner.</abstract>
    <parentTitle language="eng">ACS Applied Materials &amp; Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.8b15320</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>natural piezoelectric material</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sugar</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>organic piezoelectric nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high performance and durability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>self-powered electronics</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23439</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>E265</pageFirst>
    <pageLast>E274</pageLast>
    <pageNumber/>
    <edition/>
    <issue>S1</issue>
    <volume>40</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of In situ Synthesized Bismuth Oxide Nanostructures in Self-poled PVDF-based Nanogenerator for Mechanical Energy Harvesting Application</title>
    <abstract language="eng">A self-poled piezoelectric nanogenerator (NG) based on bismuth oxide (Bi2O3) nanostructures (BNS)-doped poly(vinylidene fluoride) (PVDF) is demonstrated. The in-situ formation of BNS incorporated in the PVDF matrix is realized through a simple solution casting technique that favors the nucleation and stabilization of 99.6% of the electroactive phase in PVDF (i.e., beta/gamma-phases). The enhancement of the output voltage (3.6 V) and current (2.4mA) of the NG based on a nonelectrically poled BNS containing PVDF composite film is achieved and demonstrated by simple repeated human finger imparting. The improvement of the output performance is influenced by the generation of the electroactive polar beta-phase in PVDF, due to the electrostatic interactions between the –CH2–/–CF2– dipoles of PVDF and the surface charge of the BNS.&#13;
The NGs are able to charge up capacitors demonstrating that the power generation from such a hybrid device structure can be utilized for powering various portable devices.</abstract>
    <parentTitle language="eng">Polymer Composites</parentTitle>
    <identifier type="doi">10.1002/pc.24628</identifier>
    <identifier type="issn">0272-8397</identifier>
    <identifier type="issn">1548-0569</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Anirban</firstName>
      <lastName>Biswas</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanogenerators</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy harvesting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>bismuth  oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field-emission scanning electron microscopy (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier Transform Infrared Spectroscopy (FTIR)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23440</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>11</pageNumber>
    <edition/>
    <issue>2</issue>
    <volume>37</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources</title>
    <abstract language="eng">A comparative study of thin aluminum nitride (AlN) films deposited by plasma-enhanced atomic layer deposition in the SENTECH SI ALD LL system applying either a direct inductively coupled plasma (ICP) or an indirect capacitively coupled plasma (CCP) source is presented. The films prepared with the ICP source (based on a planar triple spiral antenna) exhibit improved properties concerning the growth rate per cycle, total cycle duration, homogeneity, refractive index, fixed and mobile electrical charges, and residual oxygen content compared to the CCP source, where the comparison is based on the applied plasma power of 200 W. The increase of the plasma power to 600 W in the ICP process significantly reduces the residual oxygen content and enhances the electrical breakdown field. The AlN layers grown under these conditions, with a growth rate per cycle of 1.54 Å/cycle, contain residual oxygen and carbon concentrations of about 10% and 4%, respectively, and possess a refractive index of 2.07 (at 632.8 nm).</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.5079628</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">020913</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Lidia Lupina</firstName>
      <lastName>Tarnawska</lastName>
    </author>
    <author>
      <firstName>Viola</firstName>
      <lastName>Wilker</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kus</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plamsa-enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>inductively coupled</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitively coupled</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plamsa source</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emission scanning electron microscopy (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage (CV)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic force microscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
    <collection role="institutes" number="2284">AG Physikalische Chemie II</collection>
  </doc>
  <doc>
    <id>23504</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>761</pageFirst>
    <pageLast>768</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>36</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-02-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of surface properties of Ti-Cu-Ox gradient thin films using AFM and XPS investigations</title>
    <abstract language="eng">The paper presents results of investigations on surface properties of transparent semiconducting thin films based on (Ti-Cu)oxide system prepared using multi-magnetron sputtering system. The thin films were prepared using two programmed profiles of pulse widt hmodulation coefficient, so called V- and U-shape profiles. The applied powering profiles allowed fabrication of thin films with gradient distribution of Ti and Cu elements over the thickness of deposited layers. Optical investigations allowed determination of transparency of prepared films that reached up to 60 % in the visible part of optical radiation, which makes them attractive for the transparent electronics domain. Surface properties investigations showed that the surface of mixed (Ti-Cu)oxides was sensitive to adsorption, in particular to carbon dioxide and water vapor. Soft etching with argon ions resulted in surface cleaning from residuals, however, deoxidation of Cu-oxide components was also observed.</abstract>
    <parentTitle language="eng">Materials Science-Poland</parentTitle>
    <identifier type="doi">10.2478/msp-2018-0100</identifier>
    <identifier type="issn">0137-1339</identifier>
    <identifier type="issn">2083-1331</identifier>
    <identifier type="issn">2083-134X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Tomasz</firstName>
      <lastName>Kotwica</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Jarosław</firstName>
      <lastName>Domaradzki</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Wojcieszak</lastName>
    </author>
    <author>
      <firstName>Andrzej</firstName>
      <lastName>Sikora</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>surface</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gradient distribution</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin film oxide</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24001</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2013</pageFirst>
    <pageLast>2025</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-05-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Self-Powered Wearable Pressure Sensor and Pyroelectric Breathing Sensor Based on GO Interfaced PVDF Nanofibers</title>
    <abstract language="eng">This paper reports a self-powered,flexible, piezo- and pyro-electric hybrid nanogenerator (NG) device that can be fixed on different locations of human skin for detecting static and dynamic pressure variations and can also monitor temperature fluctuations during the respiration process. An efficient and cost-effective fabrication strategy has been developed to create electrospun poly(vinylidene fluoride) (PVDF)/graphene oxide (GO) nanofibers, which are used to create a highly sensitive wearable pressure sensor and pyroelectric breathing sensor. The sensor can accurately and rapidly&#13;
detect pressures as low as 10 Pa with a high sensitivity (4.3 V/kPa), a key performance indicator for wearable sensors. Importantly, the sensor exhibits a high sensitivity to bending and stretching by finger, wrist, and elbow. The pressure sensor is also highly sensitive to vocal vibrations when attached to the human throat. The device can generate a maximum output power density of∼6.2 mW/m2 when subjected to a compressive stress, which enhances its range of applications. Moreover, it is demonstrated that doping with GO improves the pyroelectric energy harvesting and sensing performance of the device under repeated temperature fluctuations. The PVDF/GO-based nanogenerator has a maximum pyroelectric output power density of∼1.2 nW/m2 and can sense temperature changes during respiration, which makes it promising as a pyroelectric breathing sensor. It is demonstrated that processing of the PVDF-GO self-powered multifunctional pressure and pyroelectric breathing sensor can be up-scaled for fabricating compact and high-performance electronic skins for application in health monitoring, motion detection, and portable electronics.</abstract>
    <parentTitle language="eng">ACS Applied Nano Materials</parentTitle>
    <identifier type="doi">10.1021/acsanm.9b00033</identifier>
    <identifier type="issn">2574-0970</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Krittish</firstName>
      <lastName>Roy</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <author>
      <firstName>Ayesha</firstName>
      <lastName>Sultana</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Mengying</firstName>
      <lastName>Xie</lastName>
    </author>
    <author>
      <firstName>Christopher Rhys</firstName>
      <lastName>Bowen</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezo- and pyro-electric hybrid nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>poly(vinylidenefluoride) (PVDF)/graphene oxide (GO) nanofibers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>wearable pressure sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>breathing sensor</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24053</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>15</pageNumber>
    <edition/>
    <issue/>
    <volume>175</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-05-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Tailoring optical and electrical properties of thin-film coatings based on mixed Hf and Ti oxides for optoelectronic application</title>
    <abstract language="eng">In this work multi-magnetron sputtering stand was used for the deposition of the mixed oxides thin films based on HfO2 and TiO2. In order to obtain various material composition the power released to each magnetron (containing metallic hafnium and titanium targets) was precisely selected. Structural, surface, optical, electrical and mechanical properties of as-deposited coatings were analyzed. Depending on the hafnium content in the deposited thin films various types of the microstructure was obtained, i.e. HfO2-monoclinic, amorphous and TiO2-rutile. Increase of Ti content above 28 at. % in the as-prepared mixed oxides coatings caused their amorphization. It was found that with an increase of Ti content in prepared coatings their surface roughness and simultaneously water contact angle decreased. Performed measurements of electrical properties revealed that the lowest leakage current density in the range of 10−7 – 10−8 A/cm2 was obtained for amorphous coatings. Moreover, the tailoring of the dielectric constant was possible by a proper selection of material composition and microstructure of the deposited thin films. Average transparency in the visible wavelength region was in the range of ca. 79–86%. The influence of material composition and structure on shifting of the fundamental absorption edge and optical bandgap energy was also observed. The refractive index increased with an increase of Ti content, while extinction coefficient was the lowest for amorphous coatings. Additionally, hardness values were dependent on the material composition and optical packing density and were in the range from 7.6 GPa to 10.1 GPa.</abstract>
    <parentTitle language="eng">Materials and Design</parentTitle>
    <identifier type="doi">10.1016/j.matdes.2019.107822</identifier>
    <identifier type="issn">0264-1275</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">107822</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Agata</firstName>
      <lastName>Obstarczyk</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Danuta</firstName>
      <lastName>Kaczmarek</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Wojcieszak</lastName>
    </author>
    <author>
      <firstName>Michał</firstName>
      <lastName>Mazur</lastName>
    </author>
    <author>
      <firstName>Jarosław</firstName>
      <lastName>Domaradzki</lastName>
    </author>
    <author>
      <firstName>Tomasz</firstName>
      <lastName>Kotwica</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Pastuszek</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Piotr</firstName>
      <lastName>Mazur</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Magnetron sputtering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical coatings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrical properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Mixed oxides</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TiO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k oxides</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Amorphous thin films</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24196</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>73</pageFirst>
    <pageLast>79</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-07-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Methanation of Coke Oven Gas with Nickel-based catalysts</title>
    <abstract language="eng">For a complete transition from fossil to CO₂ neutral energy supply new energy storage concepts are needed that allow energy supply in times of absence of regenerative power production as during dark doldrums. A promising renewable energy storage approach is the power to gas (to power) technique based on the production of synthetic natural gas (also called e-methane) by methanation of CO₂ with H₂. The latter is usually produced by electrolysis. In any power to gas concept, electrolysis is a very critical part, due to its high costs, stability issues, or limited power of required electrolysers. &#13;
As an alternative source of hydrogen, we investigate the methanation of coke oven gas (COG). COG is a byproduct of the carbon rich coke production from coal for the steel industry, with a high amount of hydrogen (~60vol%). Coke oven gas furthermore contains CH₄(~25vol%), CO (5-8vol%), and CO₂(1-3vol%), making it an attractive feedstock for the production of synthetic energy carriers like methane. In the present study, the authors investigate the direct conversion of CO and CO₂ from COG into e-methane. Compared to stoichiometric conversion, the COG hydrogen content is too high for catalytic methanation of CO₂. In order to achieve a higher methane yield, the addition of CO₂ from air, flue gas, or coal gasification can compensate the surplus of hydrogen in the coke oven gas. The process is evaluated by the conversion of CO and CO₂, the catalyst selectivity towards higher hydrocarbons for varying temperatures, and the CH₄ yield.</abstract>
    <parentTitle language="eng">International Journal of Environmental Science</parentTitle>
    <identifier type="url">https://www.iaras.org/iaras/home/caijes/methanation-of-coke-oven-gas-with-nickel-based-catalysts</identifier>
    <identifier type="issn">2367-8941</identifier>
    <identifier type="url">https://iaras.org/iaras/filedownloads/ijes/2019/008-0009(2019).pdf</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Fabian</firstName>
      <lastName>Rachow</lastName>
    </author>
    <author>
      <firstName>Vivien</firstName>
      <lastName>Günther</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Coke Oven Gas</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CO₂ recycling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power to Gas (PtG)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Synthetic Natural Gas (SNG)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>e-methane</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sabatier-Reaction</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24485</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>23352</pageFirst>
    <pageLast>23360</pageLast>
    <pageNumber/>
    <edition/>
    <issue>38</issue>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-10-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Point Defect-Mediated Interface Formation and Appearance of a Cooper Minimum for AlOₓ Atomic-Layer-Deposited Films on CH₃NH₃PbI₃</title>
    <abstract language="eng">We report on the interaction of CH₃NH₃PbI₃ substrates with AlOx films prepared by atomic layer deposition at room temperature. We use synchrotron radiation-based photoemission spectroscopy and study the Pb 4f, I 3d, and Al 2p core levels as well as the corresponding valence band states (Pb 5d and O 2p). A Cooper minimum is observed for both the Pb 5d and O 2p states, and it indicates that the bonding at the interface must be covalent. We focus on the electronic properties of the substrate and its interface and identify a delicate charge balance between polaronic and excitonic states in MAPI and AlOₓ. The perovskite vacancy sites, identified by changes in the core-level intensities, mediate the charge balance and covalent interaction.</abstract>
    <parentTitle language="eng">The Journal of Physical Chemistry. C</parentTitle>
    <identifier type="doi">10.1021/acs.jpcc.9b05282</identifier>
    <identifier type="issn">1932-7447</identifier>
    <identifier type="issn">1932-7455</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃-CH₃NH₃PbI₃ interaction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cooper minimum</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>point defects in CH₃NH₃PbI₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure of CH₃NH₃PbI₃</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24598</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>11</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-11-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Al2O3-Atomic Layer Deposited Films on CH3NH3PbI3 : Intrinsic Defects and Passivation Mechanisms</title>
    <abstract language="eng">The initial interaction of atomic layer deposited films of Al2O3 at room temperature on CH3NH3PbI3 (MAPI) films is studied. Synchrotron radiation–based photoelectron spectroscopy is applied to analyze the initial changes in the Al-derived features by comparing samples with different Al2O3 film thicknesses.&#13;
It is found that polarons and excitons, both intrinsic defects of Al2O3, play a key role in the interface formation. The polaronic states uptake a charge from the MAPI substrate. This charge is transferred to and stabilized in the excitonic state of Al2O3 which is assigned to predominately tetrahedral coordinated Al sites. This charge transfer is initiated by vacancies present in the MAPI substrate and stabilizes a covalent bonding at the Al2O3–MAPI interface but also causes a roughening of the interface which may lead to the formation of grain boundaries.&#13;
On top of the rough interface, 2D Al2O3 clusters with an increasing number of octahedrally coordinated Al—O bonds grow, and with increasing Al2O3 coverage, they introduce self-healing of the structural defects.</abstract>
    <parentTitle language="eng">Energy Technology , The Journal of Physical Chemistry C</parentTitle>
    <identifier type="doi">10.1002/ente.201900975</identifier>
    <identifier type="issn">2194-4288</identifier>
    <identifier type="issn">2194-4296</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1900975</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Steve</firstName>
      <lastName>Albrecht</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kús</lastName>
    </author>
    <author>
      <firstName>Iva</firstName>
      <lastName>Matolinová</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>charge donation and transfer cycles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>covalent interfaces</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>defect monitoring</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>model of Al2O3–CH3NH3PbI3 interactions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25047</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>38</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-01-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition</title>
    <abstract language="eng">Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium (TMGa) as the gallium precursor and oxygen (O2) plasma were used in a substrate temperature (Ts)in the range of 80–200 °C. TMGa exhibits high vapor pressure and therefore facilitates deposition at lower substrate temperatures. The Ga2O3 films were characterized by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), and capacitance-voltage (C-V) measurements. The SE data show linear thickness evolution with a growth rate of ∼0.66 Å per cycle and inhomogeneity of ≤2% for all samples. The refractive index of the Ga2O3 thin films is 1.86 ± 0.01 (at 632.8 nm) and independent of temperature, whereas the bandgap slightly decreases from 4.68 eV at Ts of 80 °C to 4.57 eV at 200 °C. XPS analysis revealed ideal stoichiometric gallium to oxygen ratios of 2:3 for the Ga2O3 layers with the lowest carbon contribution of ∼10% for the sample prepared at 150 °C. The permittivity of the layers is 9.7 ± 0.2 (at 10 kHz). In addition, fixed and mobile oxide charge densities of 2–4E12 and 1–2E12 cm−2, respectively, were observed in the C-V characteristics. Moreover, the Ga2O3 films show breakdown fields in the range of 2.2–2.7 MV/cm. Excellent optical and electrical material properties are maintained even at low substrate temperatures as low as 80 °C. Hence, the TMGa/O2 PEALD process is suitable for electronic and optoelectronic applications where low-temperature growth is required.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.5134800</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">022404</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Paul</firstName>
      <lastName>Plate</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plamsa enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low-temperature growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gallium oxide (Ga2O3)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>x-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spectroscopic ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance voltage measurements</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25280</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2190</pageFirst>
    <pageLast>2201</pageLast>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-02-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation</title>
    <abstract language="eng">The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance−voltage measurements indicate that a (NH4)2S vapor passivation step prior to atomic layer deposition of the oxide effectively lowers the interface state density. Surface and interface chemistry were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of ex situ surface passivation after native oxide removal in HCl solution was examined. It was observed that surface reoxidation occurred during (NH4)2S vapor exposure, leading to the formation of Inx(HPO4)y. S was present on the surface as a sulfide in both surface and subsurface sites. After atomic layer deposition of GAO, sulfates were detected in addition to Inx(HPO4)y, which was confirmed by near-edge X-ray absorptionfine structure analysis. The S in the stack was quantified using reference-free grazing incidence X-rayfluorescence&#13;
analysis. X-ray absorption spectroscopy showed that Gd was oxidized and present in the 3+ oxidation state, most likely as a phosphate close to the InP interface and possibly mixed with sulfates. Energy-dependent SRPES measurements of Al 2p and Gd 4d core levels, complemented by transmission electron microscopy, further suggest that the dielectric layer was segregated. Valence band measurements confirm the effective passivation of InP, indicating unpinning of the surface Fermi level.</abstract>
    <parentTitle language="eng">ACS Applied Electronic Materials</parentTitle>
    <identifier type="doi">10.1021/acsaelm.9b00388</identifier>
    <identifier type="issn">2637-6113</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Dennis H. von</firstName>
      <lastName>Dorp</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Laura</firstName>
      <lastName>Nyns</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Cuypers</lastName>
    </author>
    <author>
      <firstName>Tsvetan</firstName>
      <lastName>Ivanov</lastName>
    </author>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Claudia</firstName>
      <lastName>Fleischmann</lastName>
    </author>
    <author>
      <firstName>Philipp</firstName>
      <lastName>Hönicke</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Olivier</firstName>
      <lastName>Richard</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>De Gendt</lastName>
    </author>
    <author>
      <firstName>Dennis H. C.</firstName>
      <lastName>Lin</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Adelmann</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>III−V</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>InP</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sulfur passivation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gadolinium aluminate</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>rare earth oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25283</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>862</pageFirst>
    <pageLast>878</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-02-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Self-Powered Human-Health Monitoring through Aligned PVDFNanofibers Interfaced Skin-Interactive Piezoelectric Sensor</title>
    <abstract language="eng">Flexible and wearable e-skin sensors are attracting a great interest for their smart sensing applications in next-generation electronics. However, implant ability, sensitivity, and biosignal detection capability in a self-powered manner are the prime concerns in embedded devices. In particular, electrode compatibility and imperishability have become challenging issues in wearable sensors due to the poor compatibility and fragileness of metal electrodes. In this context, we report on a skin-interactive metal-free spongy electrode in a piezoelectric sensor where highly aligned poly(vinylidenefluoride) (PVDF) nanofibers (NFs) arrays are introduced as the piezoelectric active component and conducting polyaniline- (PANI-) coated PVDF (PANI−PVDF) NFs mats served as flexible electrodes. Notably, a 99% yield of piezoelectric phases of the aligned PVDF arrays is the key factor to exhibit promising mechano-sensitivity (0.8 V/kPa) performance that in turn helps in human-health monitoring. The sensor shows excellent mechanical to electrical energy conversion that enable to sense human finger touch (10 V under 10 kPa) with energy conversion efficiency of 53%. Most importantly, due to the compatible electrodes excellent mechanical stability has been found showing negligible degradation over 12,000 periodic cycles. Furthermore, under mechanical stimuli, it is also possible to charge up a capacitor (1μF) to 4 V within 60 s confirming the possibility to use the device as a self-powered piezo-organic-e-skin sensor (POESS). This type of structural design enables to trace elusive movement of muscles and the operation in several conditions such as bending, compression and stretching. We demonstrated various human gestures monitoring, such as wrist bending, neck stretching, and arm compressions, throat movements during drinking water, coughing actions, and swallowing. In addition, diverse specific phonation recognition, heart-pulse measurement and its respective short-time Fourier transform (STFT) analysis indicate an efficient and convenient way of monitoring human-health status particularly in hospital-free mode.</abstract>
    <parentTitle language="eng">ACS Applied Polymer Materials</parentTitle>
    <identifier type="doi">10.1021/acsapm.9b00846</identifier>
    <identifier type="issn">2637-6105</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>e-skin sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric nanofibers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>flexible electrode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>health-care monitoring</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>self-powered electronics</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25302</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>7</pageNumber>
    <edition/>
    <issue/>
    <volume>513</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-02-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Thermal stability of CH3NH3PbIxCl3-x versus [HC(NH2)2]0.83Cs0.17PbI2.7Br0.3 perovskite films by X-ray photoelectron spectroscopy</title>
    <abstract language="eng">The thermal stability of CH3NH3PbIxCl3-x and [HC(NH2)2]0.83Cs0.17PbI2.7Br0.3 perovskite films was studied in-situ by X-ray photoelectron spectroscopy. It was found that below 85 °C both of them are relatively stable. After annealing above 85 °C, we observe a clear perovskite surface decomposition, i.e., a release of organic cations and creation of “metallic lead”. The mixed cation lead mixed halide perovskite, however, decomposes at a much lower rate. For both perovskite films, the metallic to the total lead ratio changes with the same rate for the same annealing temperatures. The release of A-site cations from the ABX3 crystal structure of perovskite and/or creation of “metallic lead” causes also a small shift of the valence band maximum towards the Fermi level. The release of [HC(NH2)2]± or Cs± is not as significant as the release of CH3NH3±; therefore, it may explain why [HC(NH2)2]0.83Cs0.17PbI2.7Br0.3 solar cells are thermally more stable. Therefore, as the stability of CH3NH3PbIxCl3-x is same as the stability of [HC(NH2)2]0.83Cs0.17PbI2.7Br0.3 below 85 °C, there must be more severe degradation pathways that are currently underappreciated on the solar cell level.</abstract>
    <parentTitle language="eng">Applied Surface Science</parentTitle>
    <identifier type="doi">10.1016/j.apsusc.2020.145596</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">145596</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Mykhailo</firstName>
      <lastName>Vorokhta</lastName>
    </author>
    <author>
      <firstName>Zhiping</firstName>
      <lastName>Wang</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hybrid organic inorganic perovskite solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Film degradation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thermal stability</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25908</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>18</pageNumber>
    <edition/>
    <issue>7</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-08-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic Layer-Deposited Aluminum Oxide Hinders Iodide Migration and Stabilizes Perovskite Solar Cells</title>
    <abstract language="eng">Iodide migration causes degradation of the perovskite solar cells. Here,we observe the direct migration of iodide into the hole-transport&#13;
layer in a device. We demonstrate that ultrathin room temperature&#13;
atomic layer-deposited Al2O3 on the perovskite surface very effectively hinders the migration. The perovskite-Al2O3 interface enables charge transfer across the Al2O3 layer in the solar cells, without causing any drastic changes in the properties of the perovskite absorber. Furthermore, it helps to preserve the initial properties of the perovskite film during exposure to light and air under real operating conditions, and thus, improves the stability of the solar cells. The ultrathin Al2O3 layer deposited at room temperature significantly increases the lifetime of the perovskite solar cells, and we hope this may be a step toward the mass production of stable devices.</abstract>
    <parentTitle language="eng">Cell Reports Physical Science</parentTitle>
    <identifier type="doi">10.1016/j.xcrp.2020.100112</identifier>
    <identifier type="issn">2666-3864</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">100112</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Tim</firstName>
      <lastName>Hellmann</lastName>
    </author>
    <author>
      <firstName>Carolin</firstName>
      <lastName>Wittich</lastName>
    </author>
    <author>
      <firstName>Eric</firstName>
      <lastName>Mankel</lastName>
    </author>
    <author>
      <firstName>Iwan</firstName>
      <lastName>Zimmermann</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Mohammad Khaja</firstName>
      <lastName>Nazeeruddin</lastName>
    </author>
    <author>
      <firstName>Wolfram</firstName>
      <lastName>Jaegermann</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>iodine migration</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>aluminum oxide (Al2O3)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>26276</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>5722</pageFirst>
    <pageLast>5730</pageLast>
    <pageNumber/>
    <edition/>
    <issue>21</issue>
    <volume>13</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-11-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In situ Near-Ambient Pressure X-ray Photoelectron Spectroscopy Reveals the Influence of Photon Flux and Water on the Stability of Halide Perovskite</title>
    <abstract language="eng">For several years, scientists have been trying to understand the mechanisms that reduce the long‐term stability of perovskite solar cells. In this work, we examined the effect of water and photon flux on the stability of CH3NH3PbI3 perovskite films and solar cells using in situ near‐ambient pressure X‐ray photoelectron spectroscopy (NAP‐XPS), field emission scanning electron microscopy (FESEM), and current density–voltage (J–V) characterization. The used amount of water vapor (up to 1 mbar) had a negligible impact on the perovskite film. The higher the photon flux, the more prominent were the changes in the NAP‐XPS and FESEM data; also, a faster decline in power conversion efficiency (PCE) and a more substantial hysteresis in the J‐V characteristics were observed. Based on our results, it can be concluded that the PCE decrease originates from the creation of Frenkel pair defects in the perovskite film under illumination. The stronger the illumination, the higher the number of Frenkel defects, leading to a faster PCE decline and more substantial hysteresis in the J‐V sweeps.</abstract>
    <parentTitle language="eng">ChemSusChem</parentTitle>
    <identifier type="doi">10.1002/cssc.202001527</identifier>
    <identifier type="issn">1864-5631</identifier>
    <identifier type="issn">1864-564X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Hans</firstName>
      <lastName>Köbler</lastName>
    </author>
    <author>
      <firstName>Mykhailo</firstName>
      <lastName>Vorokhta</lastName>
    </author>
    <author>
      <firstName>Carlos</firstName>
      <lastName>Escudero</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kúš</lastName>
    </author>
    <author>
      <firstName>Břetislav</firstName>
      <lastName>Šmíd</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Steve</firstName>
      <lastName>Albrecht</lastName>
    </author>
    <author>
      <firstName>Antonio</firstName>
      <lastName>Abate</lastName>
    </author>
    <author>
      <firstName>Iva</firstName>
      <lastName>Matolínová</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission scanning electron microscopy  (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Frenkel defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photon-induced degradation</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>26929</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>248</pageFirst>
    <pageLast>259</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>3</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Temperature–Pressure Hybrid Sensing All-Organic Stretchable Energy Harvester</title>
    <abstract language="eng">The design and development of intrinsically stretchable all-organic self-powered sensors concurrently perceiving temperature and pressure remain a challenge but deliver an exciting platform to realize environmentally friendly wearable electronics. In this approach, a biomimetic all-organic stretchable energy harvester is designed by a xylitol-added poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS/Xyl) film as a compatible overlay electrode with polyaniline-reinforced one-dimensional aligned poly(vinylidene fluoride) hybrid electroactive soft nanowires. The gradient of elastic modulus between the electrode and the active nanowire component enables the all-organic device to manifest excellent power-generating performance under external temperature fluctuation (∼3 μW/m2 under ΔT ∼ 92 K) and mechanical force (∼31 μW/cm2 at 30 N). Importantly, the device renders simultaneous energy scavenging of temperature and pressure changes under pressing and stretching conditions (∼20%). The excellent mechanosensitivity (∼100 mV/N), fast response time (∼1 ms), outstanding mechanical and thermal stability, and good temperature resolution &lt;10 K enable the harvester to act as an epidermal sensor, which simultaneously detects and discriminates both subtle pressure and thermal deviations exposed to an epidermis surface. The real-time recording and wireless transferring of physiological signals to a smartphone indicate an effective way to realize remote healthcare monitoring for early intervention.</abstract>
    <parentTitle language="eng">ACS Applied Electronic Materials</parentTitle>
    <identifier type="issn">2637-6113</identifier>
    <identifier type="doi">10.1021/acsaelm.0c00816</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Tridib Kumar</firstName>
      <lastName>Sinha</lastName>
    </author>
    <author>
      <firstName>Mengying</firstName>
      <lastName>Xie</lastName>
    </author>
    <author>
      <firstName>Christopher Rhys</firstName>
      <lastName>Bowen</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Biswajit</firstName>
      <lastName>Mahanty</lastName>
    </author>
    <author>
      <firstName>Krittish</firstName>
      <lastName>Roy</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jin Kuk</firstName>
      <lastName>Kim</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>all-organic</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>pyroelectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy harvester</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>healthcare monitoring</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>27235</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1265</pageFirst>
    <pageLast>1275</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>33</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
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    <title language="eng">X‑ray Photoelectron Spectroscopy and Resonant X‑ray Spectroscopy Investigations of Interactions between Thin Metal Catalyst Films and Amorphous Titanium Dioxide Photoelectrode Protection Layers</title>
    <abstract language="eng">The use of electrochemistry, X-ray photoelectron spectroscopy, and resonant X-ray spectroscopy has unlocked the paradox of interfacial hole conduction through amorphous TiO2 (a-TiO2) to deposited Ni, Ir, and Au metal catalysts. Although electrocatalysts for the oxygen-evolution reaction derived from metallic Ir and Ni have mutually similar overpotentials in alkaline media, Si/a-TiO2/Ir interfaces exhibit higher overpotentials than Si/a-TiO2/Ni interfaces. The data allow formulation of full band energy diagrams for n-Si/a-TiO2/metal interfaces for M = Ni, Ir, or Au. Although both Ni and Ir produce band bending in a-TiO2 favoring hole conduction, only Ni creates multiple states within the a-TiO2 band gap at the a-TiO2/Ni interface, which produces a quasi-metallic interface at the a-TiO2/Ni junction. Au, however, produces a flat-band interface that limits hole conduction without any new band gap states.</abstract>
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      <lastName>Lewis</lastName>
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      <firstName>Bruce S.</firstName>
      <lastName>Brunschwig</lastName>
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    <title language="eng">Internal chemical potential in mixed covalent-ionic photosensitive systems</title>
    <abstract language="eng">The internal chemical potential Γ of mixed covalent-ionic systems represents the potential differences between the covalent and the ionic intrinsic defect states located within the ionic gap. It is the key parameter to control the carrier densities, the stability regimes, and the photosensitive properties of materials. In this work, we describe first the quantitative analysis of the carrier densities in dependence on the internal potential Nπ(Γ) based on the common features of the electronic structure of mixed covalent-ionic materials. Subsequently, this method is applied on two mixed covalent-ionic materials, i.e., formamidinium lead triiodide and gallium oxide, as representatives of the respective families of perovskites (halides) and transparent conducting oxide thin films. Based on this analysis, the carrier densities as well as the photosensitivity mechanisms and the related specific properties of these materials in dependence on their internal chemical potential are discussed.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology A</parentTitle>
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      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polarons</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Transport properties</value>
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    <subject>
      <language>eng</language>
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      <value>Rectifier</value>
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      <value>Perovskites</value>
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      <value>Thin films</value>
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    <subject>
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      <value>Chemical compounds</value>
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      <value>Chemical potential</value>
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      <language>eng</language>
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      <value>Photodissociation</value>
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    <title language="eng">Photosensitive and Rectifying Properties of Ga2O3 Described by Polaronic Screened Electrons and Internal Potentials</title>
    <abstract language="eng">The photosensitive and rectifying properties of Ga2O3 are described by (n-type) intrinsic (π-) electrons. These polaronic screened multiatomic carriers populate the intrinsic defect states within the ionic gap; their spectroscopic evidence is based on resonant photoemission spectroscopy data that also provide the ionicity factor of Ga2O3 and the size of the ionic gap. The π-electron density depends on the internal potential and its photo- and field-induced dipole contributions, and it describes the observed combined ohmic-exponential carrier densities and current–voltage dependences. The π-electron dynamics is caused by pairing and dissociation dipoles in the bulk of Ga2O3. The material properties of the electrode contribute via external chemical potentials and define the criteria for ohmic and rectifying contacts. This quantitative and predictive concept not only convinces by perfect agreement with published experimental data but also points toward the achievable performance limits of UV absorbers and rectifying devices.</abstract>
    <parentTitle language="eng">Journal of Physical Chemistry C</parentTitle>
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    <identifier type="issn">1932-7455</identifier>
    <identifier type="doi">10.1021/acs.jpcc.3c05785</identifier>
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      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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      <lastName>Henkel</lastName>
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    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
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      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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      <language>eng</language>
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      <value>Resonant photoelectron spectroscopy</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>quantitative π-electron densities</value>
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    <subject>
      <language>eng</language>
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      <value>multi-atomic quasi-particles</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photosensitivity and rectifier devices</value>
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    <publishedYear>2025</publishedYear>
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    <title language="eng">Photosensitivity and carrier densities of perovskite solar absorbers</title>
    <abstract language="eng">Dark and light current–voltage characteristics of perovskite solar absorbers are analyzed in terms of their carrier densities. The analysis reveals p‐type large polarons as a dominant carrier type in the investigated perovskite solar cells. The mechanism causing photosensitivity is attributed to the dissociation (and pairing) of bipolarons to large polarons (and vice versa) that are controlled by the internal potential Γ. As an example, the polaron concept is tested for a formamidinium lead triiodide perovskite solar cell. The individual steps of the data analysis are demonstrated and determine the ionicity factor of this perovskite film, quantify the density of the large polarons, and predict the gain and loss of photo‐induced carriers. It is deduced that a reversible light‐on/off operation can only occur when the bias voltage never exceeds a critical value of the internal potential. The results gained in this study suggest that the novel analysis can be successively applied on different hybrid perovskite materials, too.</abstract>
    <parentTitle language="eng">Advanced science</parentTitle>
    <identifier type="doi">10.1002/advs.202412711</identifier>
    <identifier type="issn">2198-3844</identifier>
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      <lastName>Henkel</lastName>
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      <lastName>Henkel</lastName>
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      <value>Bipolarons</value>
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      <value>Ionicity factor</value>
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      <value>Large polarons</value>
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      <value>Perovskite solar cells</value>
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    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
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