<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>21822</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>10084</pageFirst>
    <pageLast>10090</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3 part 3</issue>
    <volume>5</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-04-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Enhancement of Electroactive β-phase and Superior Dielectric Properties in Cerium Based Poly(vinylidene fluoride) Composite Films</title>
    <abstract language="eng">In this work we report on the preparation of poly(vinylidene fluoride) (PVDF) films with various mass fractions (wt%) of hydrated rare earth metal salt [(NH4)4Ce(SO4)4.2H2O] (CAS) and its electroactive phase (β- and γ-phase) formation. It was found that CAS can yield high amount of electroactive phases in PVDF. Compared to the neat PVDF film, a significantly increment of dielectric constant (ε ∼ 41) and a low loss factor (tan δ ∼ 0.8) were observed in the PVDF-CAS composite films. Thus the PVDF-CAS composite films with high electroactive phase and superior dielectric properties may meet the requirements of next generation electronic components.</abstract>
    <parentTitle language="eng">Materials Today: proceedings</parentTitle>
    <identifier type="doi">10.1016/j.matpr.2017.11.003</identifier>
    <identifier type="issn">2214-7853</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Shrabanee</firstName>
      <lastName>Sen</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High amount of electroactive phase</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Superior dielectric properties</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>21889</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>18</pageFirst>
    <pageLast>26</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>Oxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-05-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An (In Situ)² Approach: ALD and resPES Applied to Al₂O₃, HfO₂, and TiO₂ Ultrathin Films</title>
    <abstract language="eng">Oxide surface coatings are of importance in tailoring interface properties with respect to surface passivation, adjustment of surface potentials, or providing active centers for surface reactions. In this contribution, we report about surface coatings prepared by the atomic layer deposition (ALD) method. ALD is known for its conformal growth of ultrathin, dense films which exhibit a low concentration of pinholes.</abstract>
    <parentTitle language="eng">Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, Vol. 3.1</parentTitle>
    <identifier type="isbn">978-0-12-809739-7</identifier>
    <identifier type="isbn">978-0-12-809894-3</identifier>
    <identifier type="doi">10.1016/B978-0-12-409547-2.13852-1</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Klaus</firstName>
      <lastName>Wandelt</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Band scheme</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Partial density of states (pDOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic charges</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminum oxide (Al₂O₃)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hafnium oxide (HfO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium oxide(TiO₂)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>21890</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>162</pageFirst>
    <pageLast>171</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>Oxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-05-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface Potentials, Intrinsic Defects, and Passivation Mechanisms in Al₂O₃, HfO₂, and TiO₂ Ultrathin Films</title>
    <abstract language="eng">We study the electronic structure of ultrathin Al₂O₃, HfO₂, and TiO₂ ALD films by resonant photoelectron spectroscopy. We identify intrinsic defects which are responsible for the active sites in interface reactions, for the incorporation of intrinsic charges, and for the formation of local dipole momenta. All of these features determine the surface potentials and the reactivity of the surface of the atomic layer deposition coated systems. We give examples of charges and dipoles in Al₂O₃, on a study of the surface potentials in HfO₂, and relate the intrinsic defects in TiO₂ to their electrochemical relevance.</abstract>
    <parentTitle language="eng">Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, vol. 3.1</parentTitle>
    <identifier type="isbn">978-0-12-809739-7</identifier>
    <identifier type="isbn">978-0-12-814984-3</identifier>
    <identifier type="doi">10.1016/B978-0-12-409547-2.14119-8</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <editor>
      <firstName>Klaus</firstName>
      <lastName>Wandelt</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Silma Alberton</firstName>
      <lastName>Corrêa</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Band scheme</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface potential</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic charges</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Partial density of states (pDOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Exciton</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polaron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ligand-to-metal charge transfer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminium oxide (Al₂O₃)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hafnium oxide (HfO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium Oxide (TiO₂)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>22242</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>27003-p1</pageFirst>
    <pageLast>27003-p7</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-08-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ionicity of ZnO - a key system for transparent conductive oxides</title>
    <abstract language="eng">The electronic structure of ZnO is dominated by coexisting electron and ionic states/bonds caused by charge polarization and self-trapping phenomena of the valence charges. Their interplay manifests itself in intrinsic electronic defects which have different degree of spatial localization and electronic correlation. The relative abundance of intrinsic defects can be determined by the ionicity factor fi and its value can be derived from three independent experimental procedures in a consistent way. This approach also explains the complex satellite features in the XPS and XAS data. Ionicity and satellite formation are two experimental findings which can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.</abstract>
    <parentTitle language="eng">epl : a letters journal exploring the frontiers of physics</parentTitle>
    <identifier type="doi">10.1209/0295-5075/123/27003</identifier>
    <identifier type="issn">1286-4854</identifier>
    <identifier type="issn">0295-5075</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">ID 7003</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ionicity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>zinc oxide (ZnO)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>defect states</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transparent conductive oxide (TCO)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>22356</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>547</pageFirst>
    <pageLast>572</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier, Woodhead Publishing</publisherName>
    <publisherPlace>Duxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-09-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Preparation, properties and electronic structure of SnO₂</title>
    <abstract language="eng">This chapter reports about tin oxide (SnO₂), a material which belongs to the transparent conducting oxide family and is best characterized by its high conductivity, high carrier mobility, and the ability to form p-type conductivity. We correlate these properties in terms of localized intrinsic electronic defect states which are resolved by resonant photoelectron spectroscopy measurements. We describe SnO₂ in terms of an inhomogeneous, mixed-ionic-covalent semiconductor in which these intrinsic electronic defects state are stabilized.</abstract>
    <parentTitle language="eng">Single Crystals of Electronic Materials</parentTitle>
    <identifier type="isbn">978-0-08-102096-8</identifier>
    <identifier type="isbn">978-0-08-102097-5</identifier>
    <enrichment key="UBICOseries">Woodhead Publishing Series in Electronic and Optical Materials</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Robert</firstName>
      <lastName>Fornari</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>tin oxide (SnO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>intrinsic defect states</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>22977</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>44018</pageFirst>
    <pageLast>44032</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>10</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-12-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Natural Sugar-Assisted, Chemically Reinforced, Highly Durable Piezoorganic Nanogenerator with Superior Power Density for Self-Powered Wearable Electronics</title>
    <abstract language="eng">Natural piezoelectric materials are of increasing interest, particularly for applications in biocompatible, implantable, and flexible electronic devices. In this paper, we introduce a cost-effective, easily available natural piezoelectric material, that is, sugar in the field of wearable piezoelectric nanogenerators (PNGs) where low electrical output, biocompatibility, and performance durability are still critical issues. We report on a high-performance piezoorganic nanogenerator (PONG) based on the hybridization of sugar-encapsulated polyvinylidenefluoride (PVDF) nanofiber webs (SGNFW). We explore the crucial role of single-crystal sugar having a fascinating structure along with the synergistic enhancement of piezoelectricity during nanoconfinement of sugar-interfaced macromolecular PVDF chains. As a consequence, the SGNFW-based PONG exhibits outstanding electricity generation capability (e.g.,∼100 V under 10 kPa human finger impact and maximum power density of 33 mW/m2) in combination with sensitivity to abundantly available different mechanical sources (such as wind flow, vibration, personal electronics, and acoustic vibration). Consequently, it opens up suitability in multifunctional self-powered wearable sensor designs for realistic implementation. In addition, commercially available capacitors are charged up effectively by the PONG because of its rapid energy storage capability. The high performance of the PONG not only offers“battery-free”energy generation (several portable units of light-emitting diodes and a liquid crystal display screen are powered up without using external storage) but also promises its use in wireless signal transmitting systems, which widens the potential in personal health care monitoring. Furthermore, owing to the geometrical stress confinement effect, the PONG is proven to be a highly durable power-generating device validated by stability test over 10 weeks. Therefore, the organic nanogenerator would be a convenient solution for portable personal electronic devices that are expected to operate in a self-powered manner.</abstract>
    <parentTitle language="eng">ACS Applied Materials &amp; Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.8b15320</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>natural piezoelectric material</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sugar</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>organic piezoelectric nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high performance and durability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>self-powered electronics</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23439</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>E265</pageFirst>
    <pageLast>E274</pageLast>
    <pageNumber/>
    <edition/>
    <issue>S1</issue>
    <volume>40</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of In situ Synthesized Bismuth Oxide Nanostructures in Self-poled PVDF-based Nanogenerator for Mechanical Energy Harvesting Application</title>
    <abstract language="eng">A self-poled piezoelectric nanogenerator (NG) based on bismuth oxide (Bi2O3) nanostructures (BNS)-doped poly(vinylidene fluoride) (PVDF) is demonstrated. The in-situ formation of BNS incorporated in the PVDF matrix is realized through a simple solution casting technique that favors the nucleation and stabilization of 99.6% of the electroactive phase in PVDF (i.e., beta/gamma-phases). The enhancement of the output voltage (3.6 V) and current (2.4mA) of the NG based on a nonelectrically poled BNS containing PVDF composite film is achieved and demonstrated by simple repeated human finger imparting. The improvement of the output performance is influenced by the generation of the electroactive polar beta-phase in PVDF, due to the electrostatic interactions between the –CH2–/–CF2– dipoles of PVDF and the surface charge of the BNS.&#13;
The NGs are able to charge up capacitors demonstrating that the power generation from such a hybrid device structure can be utilized for powering various portable devices.</abstract>
    <parentTitle language="eng">Polymer Composites</parentTitle>
    <identifier type="doi">10.1002/pc.24628</identifier>
    <identifier type="issn">0272-8397</identifier>
    <identifier type="issn">1548-0569</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Anirban</firstName>
      <lastName>Biswas</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanogenerators</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy harvesting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>bismuth  oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field-emission scanning electron microscopy (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier Transform Infrared Spectroscopy (FTIR)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23440</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>11</pageNumber>
    <edition/>
    <issue>2</issue>
    <volume>37</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources</title>
    <abstract language="eng">A comparative study of thin aluminum nitride (AlN) films deposited by plasma-enhanced atomic layer deposition in the SENTECH SI ALD LL system applying either a direct inductively coupled plasma (ICP) or an indirect capacitively coupled plasma (CCP) source is presented. The films prepared with the ICP source (based on a planar triple spiral antenna) exhibit improved properties concerning the growth rate per cycle, total cycle duration, homogeneity, refractive index, fixed and mobile electrical charges, and residual oxygen content compared to the CCP source, where the comparison is based on the applied plasma power of 200 W. The increase of the plasma power to 600 W in the ICP process significantly reduces the residual oxygen content and enhances the electrical breakdown field. The AlN layers grown under these conditions, with a growth rate per cycle of 1.54 Å/cycle, contain residual oxygen and carbon concentrations of about 10% and 4%, respectively, and possess a refractive index of 2.07 (at 632.8 nm).</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.5079628</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">020913</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Lidia Lupina</firstName>
      <lastName>Tarnawska</lastName>
    </author>
    <author>
      <firstName>Viola</firstName>
      <lastName>Wilker</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kus</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plamsa-enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>inductively coupled</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitively coupled</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plamsa source</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emission scanning electron microscopy (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage (CV)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic force microscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
    <collection role="institutes" number="2284">AG Physikalische Chemie II</collection>
  </doc>
  <doc>
    <id>23979</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>157</pageFirst>
    <pageLast>157</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_noref</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Depth profiling of PEALD-AlN films based on Al2p XPS peak decomposition</title>
    <abstract language="eng">AlN has remarkable properties (wide band gap, low electrical and thermal conductivity, high dielectric constant, piezoelectricity) and is attractive for (opto)electronic and sensor applications. However, high oxygen content within nitride films is always a critical issue due to the thermodynamically favorable oxidation against nitridation resulting in deteriorated materials properties. In order to clarify whether the oxidation is a surface-limited or a bulk process elemental depth profiling is essential. In this work XPS in combination with Ar+ sputtering is applied to carry out depth profiling of AlN films prepared by plasma-enhanced atomic layer deposition using different parameters (plasma source, power and pulse duration). Particularly, the Al2p core levels are analyzed where the signals are decomposed into four components, representing weaker contributions of pure AlN and aluminum oxide phases as well as stronger signals of mixed oxygen-rich and nitrogen-rich phases. After sputtering (providing access to the deeper part of the film) the pure AlN phase content increases while the pure aluminum oxide content stays relatively constant. These issues are discussed with regard to the preparation parameters employed and accompanying XRD and electrical measurements.</abstract>
    <parentTitle language="eng">Verhandlungen der DPG</parentTitle>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2019/conference/regensburg/part/ds/session/14/contribution/25</identifier>
    <identifier type="issn">0420-0195</identifier>
    <enrichment key="UBICOseries">Verhandlungen der DPG (VI) ; 54, 4</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>peak decomposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasma enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>aluminium nitride (AlN)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24001</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2013</pageFirst>
    <pageLast>2025</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-05-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Self-Powered Wearable Pressure Sensor and Pyroelectric Breathing Sensor Based on GO Interfaced PVDF Nanofibers</title>
    <abstract language="eng">This paper reports a self-powered,flexible, piezo- and pyro-electric hybrid nanogenerator (NG) device that can be fixed on different locations of human skin for detecting static and dynamic pressure variations and can also monitor temperature fluctuations during the respiration process. An efficient and cost-effective fabrication strategy has been developed to create electrospun poly(vinylidene fluoride) (PVDF)/graphene oxide (GO) nanofibers, which are used to create a highly sensitive wearable pressure sensor and pyroelectric breathing sensor. The sensor can accurately and rapidly&#13;
detect pressures as low as 10 Pa with a high sensitivity (4.3 V/kPa), a key performance indicator for wearable sensors. Importantly, the sensor exhibits a high sensitivity to bending and stretching by finger, wrist, and elbow. The pressure sensor is also highly sensitive to vocal vibrations when attached to the human throat. The device can generate a maximum output power density of∼6.2 mW/m2 when subjected to a compressive stress, which enhances its range of applications. Moreover, it is demonstrated that doping with GO improves the pyroelectric energy harvesting and sensing performance of the device under repeated temperature fluctuations. The PVDF/GO-based nanogenerator has a maximum pyroelectric output power density of∼1.2 nW/m2 and can sense temperature changes during respiration, which makes it promising as a pyroelectric breathing sensor. It is demonstrated that processing of the PVDF-GO self-powered multifunctional pressure and pyroelectric breathing sensor can be up-scaled for fabricating compact and high-performance electronic skins for application in health monitoring, motion detection, and portable electronics.</abstract>
    <parentTitle language="eng">ACS Applied Nano Materials</parentTitle>
    <identifier type="doi">10.1021/acsanm.9b00033</identifier>
    <identifier type="issn">2574-0970</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Krittish</firstName>
      <lastName>Roy</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <author>
      <firstName>Ayesha</firstName>
      <lastName>Sultana</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Mengying</firstName>
      <lastName>Xie</lastName>
    </author>
    <author>
      <firstName>Christopher Rhys</firstName>
      <lastName>Bowen</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezo- and pyro-electric hybrid nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>poly(vinylidenefluoride) (PVDF)/graphene oxide (GO) nanofibers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>wearable pressure sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>breathing sensor</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24485</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>23352</pageFirst>
    <pageLast>23360</pageLast>
    <pageNumber/>
    <edition/>
    <issue>38</issue>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-10-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Point Defect-Mediated Interface Formation and Appearance of a Cooper Minimum for AlOₓ Atomic-Layer-Deposited Films on CH₃NH₃PbI₃</title>
    <abstract language="eng">We report on the interaction of CH₃NH₃PbI₃ substrates with AlOx films prepared by atomic layer deposition at room temperature. We use synchrotron radiation-based photoemission spectroscopy and study the Pb 4f, I 3d, and Al 2p core levels as well as the corresponding valence band states (Pb 5d and O 2p). A Cooper minimum is observed for both the Pb 5d and O 2p states, and it indicates that the bonding at the interface must be covalent. We focus on the electronic properties of the substrate and its interface and identify a delicate charge balance between polaronic and excitonic states in MAPI and AlOₓ. The perovskite vacancy sites, identified by changes in the core-level intensities, mediate the charge balance and covalent interaction.</abstract>
    <parentTitle language="eng">The Journal of Physical Chemistry. C</parentTitle>
    <identifier type="doi">10.1021/acs.jpcc.9b05282</identifier>
    <identifier type="issn">1932-7447</identifier>
    <identifier type="issn">1932-7455</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃-CH₃NH₃PbI₃ interaction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cooper minimum</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>point defects in CH₃NH₃PbI₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure of CH₃NH₃PbI₃</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24598</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>11</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-11-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Al2O3-Atomic Layer Deposited Films on CH3NH3PbI3 : Intrinsic Defects and Passivation Mechanisms</title>
    <abstract language="eng">The initial interaction of atomic layer deposited films of Al2O3 at room temperature on CH3NH3PbI3 (MAPI) films is studied. Synchrotron radiation–based photoelectron spectroscopy is applied to analyze the initial changes in the Al-derived features by comparing samples with different Al2O3 film thicknesses.&#13;
It is found that polarons and excitons, both intrinsic defects of Al2O3, play a key role in the interface formation. The polaronic states uptake a charge from the MAPI substrate. This charge is transferred to and stabilized in the excitonic state of Al2O3 which is assigned to predominately tetrahedral coordinated Al sites. This charge transfer is initiated by vacancies present in the MAPI substrate and stabilizes a covalent bonding at the Al2O3–MAPI interface but also causes a roughening of the interface which may lead to the formation of grain boundaries.&#13;
On top of the rough interface, 2D Al2O3 clusters with an increasing number of octahedrally coordinated Al—O bonds grow, and with increasing Al2O3 coverage, they introduce self-healing of the structural defects.</abstract>
    <parentTitle language="eng">Energy Technology , The Journal of Physical Chemistry C</parentTitle>
    <identifier type="doi">10.1002/ente.201900975</identifier>
    <identifier type="issn">2194-4288</identifier>
    <identifier type="issn">2194-4296</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1900975</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Steve</firstName>
      <lastName>Albrecht</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kús</lastName>
    </author>
    <author>
      <firstName>Iva</firstName>
      <lastName>Matolinová</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>charge donation and transfer cycles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>covalent interfaces</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>defect monitoring</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>model of Al2O3–CH3NH3PbI3 interactions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25047</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>38</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-01-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition</title>
    <abstract language="eng">Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium (TMGa) as the gallium precursor and oxygen (O2) plasma were used in a substrate temperature (Ts)in the range of 80–200 °C. TMGa exhibits high vapor pressure and therefore facilitates deposition at lower substrate temperatures. The Ga2O3 films were characterized by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), and capacitance-voltage (C-V) measurements. The SE data show linear thickness evolution with a growth rate of ∼0.66 Å per cycle and inhomogeneity of ≤2% for all samples. The refractive index of the Ga2O3 thin films is 1.86 ± 0.01 (at 632.8 nm) and independent of temperature, whereas the bandgap slightly decreases from 4.68 eV at Ts of 80 °C to 4.57 eV at 200 °C. XPS analysis revealed ideal stoichiometric gallium to oxygen ratios of 2:3 for the Ga2O3 layers with the lowest carbon contribution of ∼10% for the sample prepared at 150 °C. The permittivity of the layers is 9.7 ± 0.2 (at 10 kHz). In addition, fixed and mobile oxide charge densities of 2–4E12 and 1–2E12 cm−2, respectively, were observed in the C-V characteristics. Moreover, the Ga2O3 films show breakdown fields in the range of 2.2–2.7 MV/cm. Excellent optical and electrical material properties are maintained even at low substrate temperatures as low as 80 °C. Hence, the TMGa/O2 PEALD process is suitable for electronic and optoelectronic applications where low-temperature growth is required.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.5134800</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">022404</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Paul</firstName>
      <lastName>Plate</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plamsa enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low-temperature growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gallium oxide (Ga2O3)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>x-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spectroscopic ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance voltage measurements</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25283</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>862</pageFirst>
    <pageLast>878</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-02-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Self-Powered Human-Health Monitoring through Aligned PVDFNanofibers Interfaced Skin-Interactive Piezoelectric Sensor</title>
    <abstract language="eng">Flexible and wearable e-skin sensors are attracting a great interest for their smart sensing applications in next-generation electronics. However, implant ability, sensitivity, and biosignal detection capability in a self-powered manner are the prime concerns in embedded devices. In particular, electrode compatibility and imperishability have become challenging issues in wearable sensors due to the poor compatibility and fragileness of metal electrodes. In this context, we report on a skin-interactive metal-free spongy electrode in a piezoelectric sensor where highly aligned poly(vinylidenefluoride) (PVDF) nanofibers (NFs) arrays are introduced as the piezoelectric active component and conducting polyaniline- (PANI-) coated PVDF (PANI−PVDF) NFs mats served as flexible electrodes. Notably, a 99% yield of piezoelectric phases of the aligned PVDF arrays is the key factor to exhibit promising mechano-sensitivity (0.8 V/kPa) performance that in turn helps in human-health monitoring. The sensor shows excellent mechanical to electrical energy conversion that enable to sense human finger touch (10 V under 10 kPa) with energy conversion efficiency of 53%. Most importantly, due to the compatible electrodes excellent mechanical stability has been found showing negligible degradation over 12,000 periodic cycles. Furthermore, under mechanical stimuli, it is also possible to charge up a capacitor (1μF) to 4 V within 60 s confirming the possibility to use the device as a self-powered piezo-organic-e-skin sensor (POESS). This type of structural design enables to trace elusive movement of muscles and the operation in several conditions such as bending, compression and stretching. We demonstrated various human gestures monitoring, such as wrist bending, neck stretching, and arm compressions, throat movements during drinking water, coughing actions, and swallowing. In addition, diverse specific phonation recognition, heart-pulse measurement and its respective short-time Fourier transform (STFT) analysis indicate an efficient and convenient way of monitoring human-health status particularly in hospital-free mode.</abstract>
    <parentTitle language="eng">ACS Applied Polymer Materials</parentTitle>
    <identifier type="doi">10.1021/acsapm.9b00846</identifier>
    <identifier type="issn">2637-6105</identifier>
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    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>e-skin sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric nanofibers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>flexible electrode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>health-care monitoring</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>self-powered electronics</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>26929</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>248</pageFirst>
    <pageLast>259</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>3</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Temperature–Pressure Hybrid Sensing All-Organic Stretchable Energy Harvester</title>
    <abstract language="eng">The design and development of intrinsically stretchable all-organic self-powered sensors concurrently perceiving temperature and pressure remain a challenge but deliver an exciting platform to realize environmentally friendly wearable electronics. In this approach, a biomimetic all-organic stretchable energy harvester is designed by a xylitol-added poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS/Xyl) film as a compatible overlay electrode with polyaniline-reinforced one-dimensional aligned poly(vinylidene fluoride) hybrid electroactive soft nanowires. The gradient of elastic modulus between the electrode and the active nanowire component enables the all-organic device to manifest excellent power-generating performance under external temperature fluctuation (∼3 μW/m2 under ΔT ∼ 92 K) and mechanical force (∼31 μW/cm2 at 30 N). Importantly, the device renders simultaneous energy scavenging of temperature and pressure changes under pressing and stretching conditions (∼20%). The excellent mechanosensitivity (∼100 mV/N), fast response time (∼1 ms), outstanding mechanical and thermal stability, and good temperature resolution &lt;10 K enable the harvester to act as an epidermal sensor, which simultaneously detects and discriminates both subtle pressure and thermal deviations exposed to an epidermis surface. The real-time recording and wireless transferring of physiological signals to a smartphone indicate an effective way to realize remote healthcare monitoring for early intervention.</abstract>
    <parentTitle language="eng">ACS Applied Electronic Materials</parentTitle>
    <identifier type="issn">2637-6113</identifier>
    <identifier type="doi">10.1021/acsaelm.0c00816</identifier>
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    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
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    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Tridib Kumar</firstName>
      <lastName>Sinha</lastName>
    </author>
    <author>
      <firstName>Mengying</firstName>
      <lastName>Xie</lastName>
    </author>
    <author>
      <firstName>Christopher Rhys</firstName>
      <lastName>Bowen</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Biswajit</firstName>
      <lastName>Mahanty</lastName>
    </author>
    <author>
      <firstName>Krittish</firstName>
      <lastName>Roy</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jin Kuk</firstName>
      <lastName>Kim</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>all-organic</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezoelectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>pyroelectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy harvester</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>healthcare monitoring</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>35147</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>9</pageLast>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue>1</issue>
    <volume>43 (2025)</volume>
    <type>articler</type>
    <publisherName>American Vacuum Society</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-01-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Internal chemical potential in mixed covalent-ionic photosensitive systems</title>
    <abstract language="eng">The internal chemical potential Γ of mixed covalent-ionic systems represents the potential differences between the covalent and the ionic intrinsic defect states located within the ionic gap. It is the key parameter to control the carrier densities, the stability regimes, and the photosensitive properties of materials. In this work, we describe first the quantitative analysis of the carrier densities in dependence on the internal potential Nπ(Γ) based on the common features of the electronic structure of mixed covalent-ionic materials. Subsequently, this method is applied on two mixed covalent-ionic materials, i.e., formamidinium lead triiodide and gallium oxide, as representatives of the respective families of perovskites (halides) and transparent conducting oxide thin films. Based on this analysis, the carrier densities as well as the photosensitivity mechanisms and the related specific properties of these materials in dependence on their internal chemical potential are discussed.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology A</parentTitle>
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    <identifier type="issn">0734-2101</identifier>
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    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polarons</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Transport properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Rectifier</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrical properties and parameters</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Perovskites</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin films</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Chemical compounds</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Chemical potential</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photodissociation</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>32047</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>23077</pageFirst>
    <pageLast>23089</pageLast>
    <pageNumber/>
    <edition/>
    <issue>47</issue>
    <volume>127</volume>
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    <title language="eng">Photosensitive and Rectifying Properties of Ga2O3 Described by Polaronic Screened Electrons and Internal Potentials</title>
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    <title language="eng">Photosensitivity and carrier densities of perovskite solar absorbers</title>
    <abstract language="eng">Dark and light current–voltage characteristics of perovskite solar absorbers are analyzed in terms of their carrier densities. The analysis reveals p‐type large polarons as a dominant carrier type in the investigated perovskite solar cells. The mechanism causing photosensitivity is attributed to the dissociation (and pairing) of bipolarons to large polarons (and vice versa) that are controlled by the internal potential Γ. As an example, the polaron concept is tested for a formamidinium lead triiodide perovskite solar cell. The individual steps of the data analysis are demonstrated and determine the ionicity factor of this perovskite film, quantify the density of the large polarons, and predict the gain and loss of photo‐induced carriers. It is deduced that a reversible light‐on/off operation can only occur when the bias voltage never exceeds a critical value of the internal potential. The results gained in this study suggest that the novel analysis can be successively applied on different hybrid perovskite materials, too.</abstract>
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