<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>23439</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>E265</pageFirst>
    <pageLast>E274</pageLast>
    <pageNumber/>
    <edition/>
    <issue>S1</issue>
    <volume>40</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of In situ Synthesized Bismuth Oxide Nanostructures in Self-poled PVDF-based Nanogenerator for Mechanical Energy Harvesting Application</title>
    <abstract language="eng">A self-poled piezoelectric nanogenerator (NG) based on bismuth oxide (Bi2O3) nanostructures (BNS)-doped poly(vinylidene fluoride) (PVDF) is demonstrated. The in-situ formation of BNS incorporated in the PVDF matrix is realized through a simple solution casting technique that favors the nucleation and stabilization of 99.6% of the electroactive phase in PVDF (i.e., beta/gamma-phases). The enhancement of the output voltage (3.6 V) and current (2.4mA) of the NG based on a nonelectrically poled BNS containing PVDF composite film is achieved and demonstrated by simple repeated human finger imparting. The improvement of the output performance is influenced by the generation of the electroactive polar beta-phase in PVDF, due to the electrostatic interactions between the –CH2–/–CF2– dipoles of PVDF and the surface charge of the BNS.&#13;
The NGs are able to charge up capacitors demonstrating that the power generation from such a hybrid device structure can be utilized for powering various portable devices.</abstract>
    <parentTitle language="eng">Polymer Composites</parentTitle>
    <identifier type="doi">10.1002/pc.24628</identifier>
    <identifier type="issn">0272-8397</identifier>
    <identifier type="issn">1548-0569</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Anirban</firstName>
      <lastName>Biswas</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Kuntal</firstName>
      <lastName>Maity</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanogenerators</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>energy harvesting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PVDF</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>bismuth  oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field-emission scanning electron microscopy (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier Transform Infrared Spectroscopy (FTIR)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23440</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>11</pageNumber>
    <edition/>
    <issue>2</issue>
    <volume>37</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources</title>
    <abstract language="eng">A comparative study of thin aluminum nitride (AlN) films deposited by plasma-enhanced atomic layer deposition in the SENTECH SI ALD LL system applying either a direct inductively coupled plasma (ICP) or an indirect capacitively coupled plasma (CCP) source is presented. The films prepared with the ICP source (based on a planar triple spiral antenna) exhibit improved properties concerning the growth rate per cycle, total cycle duration, homogeneity, refractive index, fixed and mobile electrical charges, and residual oxygen content compared to the CCP source, where the comparison is based on the applied plasma power of 200 W. The increase of the plasma power to 600 W in the ICP process significantly reduces the residual oxygen content and enhances the electrical breakdown field. The AlN layers grown under these conditions, with a growth rate per cycle of 1.54 Å/cycle, contain residual oxygen and carbon concentrations of about 10% and 4%, respectively, and possess a refractive index of 2.07 (at 632.8 nm).</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.5079628</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">020913</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Lidia Lupina</firstName>
      <lastName>Tarnawska</lastName>
    </author>
    <author>
      <firstName>Viola</firstName>
      <lastName>Wilker</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kus</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plamsa-enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>inductively coupled</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitively coupled</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plamsa source</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emission scanning electron microscopy (FESEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage (CV)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic force microscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
    <collection role="institutes" number="2284">AG Physikalische Chemie II</collection>
  </doc>
  <doc>
    <id>23504</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>761</pageFirst>
    <pageLast>768</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>36</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-02-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of surface properties of Ti-Cu-Ox gradient thin films using AFM and XPS investigations</title>
    <abstract language="eng">The paper presents results of investigations on surface properties of transparent semiconducting thin films based on (Ti-Cu)oxide system prepared using multi-magnetron sputtering system. The thin films were prepared using two programmed profiles of pulse widt hmodulation coefficient, so called V- and U-shape profiles. The applied powering profiles allowed fabrication of thin films with gradient distribution of Ti and Cu elements over the thickness of deposited layers. Optical investigations allowed determination of transparency of prepared films that reached up to 60 % in the visible part of optical radiation, which makes them attractive for the transparent electronics domain. Surface properties investigations showed that the surface of mixed (Ti-Cu)oxides was sensitive to adsorption, in particular to carbon dioxide and water vapor. Soft etching with argon ions resulted in surface cleaning from residuals, however, deoxidation of Cu-oxide components was also observed.</abstract>
    <parentTitle language="eng">Materials Science-Poland</parentTitle>
    <identifier type="doi">10.2478/msp-2018-0100</identifier>
    <identifier type="issn">0137-1339</identifier>
    <identifier type="issn">2083-1331</identifier>
    <identifier type="issn">2083-134X</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Tomasz</firstName>
      <lastName>Kotwica</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Jarosław</firstName>
      <lastName>Domaradzki</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Wojcieszak</lastName>
    </author>
    <author>
      <firstName>Andrzej</firstName>
      <lastName>Sikora</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>surface</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gradient distribution</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin film oxide</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23978</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>403</pageFirst>
    <pageLast>403</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_noref</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Out-of-plane electronic contributions in Bi-cuprates studied by resonant photoelectron spectroscopy at the Cu 2p edge</title>
    <abstract language="eng">In high-temperature superconductors with a layered crystal structure out-of-plane contributions are often neglected, while the copper-oxygen planes are commonly considered to dominate the electronic properties around the Fermi energy. Here we report on a resonant photoemission study of (Pb,Bi)2201 and (Pb,Bi)2212 single crystals to unravel the resonant decay mechanisms at the Cu 2p absorption edge. We demonstrate a pronounced polarization dependence caused by two different Auger processes for in-plane and out-of-plane orientations. We deduce that the lowest energy valence state being involved in the two Auger processes, consists of three-dimensional contributions by admixed out-of-plane Sr, Bi, and O 2p states. It also suggests that the doping-induced charge density is dynamic, fluctuating within the Cu-O plane, and spills out perpendicular to it.&#13;
&#13;
C. Janowitz and D. Schmeißer, Supercond. Sci. Technol. 31, 045006 (2018)</abstract>
    <parentTitle language="eng">Verhandlungen der DPG</parentTitle>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2019/conference/regensburg/part/tt/session/49/contribution/19</identifier>
    <identifier type="issn">0420-0195</identifier>
    <enrichment key="UBICOseries">Verhandlungen der DPG (VI) ; 54,4</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-temperature superconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoemission spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>single crystal</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>doping-induced charge density</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>23979</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>157</pageFirst>
    <pageLast>157</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_noref</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-04-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Depth profiling of PEALD-AlN films based on Al2p XPS peak decomposition</title>
    <abstract language="eng">AlN has remarkable properties (wide band gap, low electrical and thermal conductivity, high dielectric constant, piezoelectricity) and is attractive for (opto)electronic and sensor applications. However, high oxygen content within nitride films is always a critical issue due to the thermodynamically favorable oxidation against nitridation resulting in deteriorated materials properties. In order to clarify whether the oxidation is a surface-limited or a bulk process elemental depth profiling is essential. In this work XPS in combination with Ar+ sputtering is applied to carry out depth profiling of AlN films prepared by plasma-enhanced atomic layer deposition using different parameters (plasma source, power and pulse duration). Particularly, the Al2p core levels are analyzed where the signals are decomposed into four components, representing weaker contributions of pure AlN and aluminum oxide phases as well as stronger signals of mixed oxygen-rich and nitrogen-rich phases. After sputtering (providing access to the deeper part of the film) the pure AlN phase content increases while the pure aluminum oxide content stays relatively constant. These issues are discussed with regard to the preparation parameters employed and accompanying XRD and electrical measurements.</abstract>
    <parentTitle language="eng">Verhandlungen der DPG</parentTitle>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2019/conference/regensburg/part/ds/session/14/contribution/25</identifier>
    <identifier type="issn">0420-0195</identifier>
    <enrichment key="UBICOseries">Verhandlungen der DPG (VI) ; 54, 4</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>peak decomposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasma enhanced atomic layer deposition (PEALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>aluminium nitride (AlN)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24001</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2013</pageFirst>
    <pageLast>2025</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-05-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Self-Powered Wearable Pressure Sensor and Pyroelectric Breathing Sensor Based on GO Interfaced PVDF Nanofibers</title>
    <abstract language="eng">This paper reports a self-powered,flexible, piezo- and pyro-electric hybrid nanogenerator (NG) device that can be fixed on different locations of human skin for detecting static and dynamic pressure variations and can also monitor temperature fluctuations during the respiration process. An efficient and cost-effective fabrication strategy has been developed to create electrospun poly(vinylidene fluoride) (PVDF)/graphene oxide (GO) nanofibers, which are used to create a highly sensitive wearable pressure sensor and pyroelectric breathing sensor. The sensor can accurately and rapidly&#13;
detect pressures as low as 10 Pa with a high sensitivity (4.3 V/kPa), a key performance indicator for wearable sensors. Importantly, the sensor exhibits a high sensitivity to bending and stretching by finger, wrist, and elbow. The pressure sensor is also highly sensitive to vocal vibrations when attached to the human throat. The device can generate a maximum output power density of∼6.2 mW/m2 when subjected to a compressive stress, which enhances its range of applications. Moreover, it is demonstrated that doping with GO improves the pyroelectric energy harvesting and sensing performance of the device under repeated temperature fluctuations. The PVDF/GO-based nanogenerator has a maximum pyroelectric output power density of∼1.2 nW/m2 and can sense temperature changes during respiration, which makes it promising as a pyroelectric breathing sensor. It is demonstrated that processing of the PVDF-GO self-powered multifunctional pressure and pyroelectric breathing sensor can be up-scaled for fabricating compact and high-performance electronic skins for application in health monitoring, motion detection, and portable electronics.</abstract>
    <parentTitle language="eng">ACS Applied Nano Materials</parentTitle>
    <identifier type="doi">10.1021/acsanm.9b00033</identifier>
    <identifier type="issn">2574-0970</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Krittish</firstName>
      <lastName>Roy</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Sujoy Kumar</firstName>
      <lastName>Ghosh</lastName>
    </author>
    <author>
      <firstName>Ayesha</firstName>
      <lastName>Sultana</lastName>
    </author>
    <author>
      <firstName>Samiran</firstName>
      <lastName>Garain</lastName>
    </author>
    <author>
      <firstName>Mengying</firstName>
      <lastName>Xie</lastName>
    </author>
    <author>
      <firstName>Christopher Rhys</firstName>
      <lastName>Bowen</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>piezo- and pyro-electric hybrid nanogenerator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>poly(vinylidenefluoride) (PVDF)/graphene oxide (GO) nanofibers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>wearable pressure sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>breathing sensor</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24053</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>15</pageNumber>
    <edition/>
    <issue/>
    <volume>175</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-05-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Tailoring optical and electrical properties of thin-film coatings based on mixed Hf and Ti oxides for optoelectronic application</title>
    <abstract language="eng">In this work multi-magnetron sputtering stand was used for the deposition of the mixed oxides thin films based on HfO2 and TiO2. In order to obtain various material composition the power released to each magnetron (containing metallic hafnium and titanium targets) was precisely selected. Structural, surface, optical, electrical and mechanical properties of as-deposited coatings were analyzed. Depending on the hafnium content in the deposited thin films various types of the microstructure was obtained, i.e. HfO2-monoclinic, amorphous and TiO2-rutile. Increase of Ti content above 28 at. % in the as-prepared mixed oxides coatings caused their amorphization. It was found that with an increase of Ti content in prepared coatings their surface roughness and simultaneously water contact angle decreased. Performed measurements of electrical properties revealed that the lowest leakage current density in the range of 10−7 – 10−8 A/cm2 was obtained for amorphous coatings. Moreover, the tailoring of the dielectric constant was possible by a proper selection of material composition and microstructure of the deposited thin films. Average transparency in the visible wavelength region was in the range of ca. 79–86%. The influence of material composition and structure on shifting of the fundamental absorption edge and optical bandgap energy was also observed. The refractive index increased with an increase of Ti content, while extinction coefficient was the lowest for amorphous coatings. Additionally, hardness values were dependent on the material composition and optical packing density and were in the range from 7.6 GPa to 10.1 GPa.</abstract>
    <parentTitle language="eng">Materials and Design</parentTitle>
    <identifier type="doi">10.1016/j.matdes.2019.107822</identifier>
    <identifier type="issn">0264-1275</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">107822</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Agata</firstName>
      <lastName>Obstarczyk</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Danuta</firstName>
      <lastName>Kaczmarek</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Wojcieszak</lastName>
    </author>
    <author>
      <firstName>Michał</firstName>
      <lastName>Mazur</lastName>
    </author>
    <author>
      <firstName>Jarosław</firstName>
      <lastName>Domaradzki</lastName>
    </author>
    <author>
      <firstName>Tomasz</firstName>
      <lastName>Kotwica</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Pastuszek</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Piotr</firstName>
      <lastName>Mazur</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Magnetron sputtering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical coatings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrical properties</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Mixed oxides</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TiO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k oxides</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Amorphous thin films</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24196</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>73</pageFirst>
    <pageLast>79</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-07-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Methanation of Coke Oven Gas with Nickel-based catalysts</title>
    <abstract language="eng">For a complete transition from fossil to CO₂ neutral energy supply new energy storage concepts are needed that allow energy supply in times of absence of regenerative power production as during dark doldrums. A promising renewable energy storage approach is the power to gas (to power) technique based on the production of synthetic natural gas (also called e-methane) by methanation of CO₂ with H₂. The latter is usually produced by electrolysis. In any power to gas concept, electrolysis is a very critical part, due to its high costs, stability issues, or limited power of required electrolysers. &#13;
As an alternative source of hydrogen, we investigate the methanation of coke oven gas (COG). COG is a byproduct of the carbon rich coke production from coal for the steel industry, with a high amount of hydrogen (~60vol%). Coke oven gas furthermore contains CH₄(~25vol%), CO (5-8vol%), and CO₂(1-3vol%), making it an attractive feedstock for the production of synthetic energy carriers like methane. In the present study, the authors investigate the direct conversion of CO and CO₂ from COG into e-methane. Compared to stoichiometric conversion, the COG hydrogen content is too high for catalytic methanation of CO₂. In order to achieve a higher methane yield, the addition of CO₂ from air, flue gas, or coal gasification can compensate the surplus of hydrogen in the coke oven gas. The process is evaluated by the conversion of CO and CO₂, the catalyst selectivity towards higher hydrocarbons for varying temperatures, and the CH₄ yield.</abstract>
    <parentTitle language="eng">International Journal of Environmental Science</parentTitle>
    <identifier type="url">https://www.iaras.org/iaras/home/caijes/methanation-of-coke-oven-gas-with-nickel-based-catalysts</identifier>
    <identifier type="issn">2367-8941</identifier>
    <identifier type="url">https://iaras.org/iaras/filedownloads/ijes/2019/008-0009(2019).pdf</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Fabian</firstName>
      <lastName>Rachow</lastName>
    </author>
    <author>
      <firstName>Vivien</firstName>
      <lastName>Günther</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Coke Oven Gas</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CO₂ recycling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power to Gas (PtG)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Synthetic Natural Gas (SNG)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>e-methane</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sabatier-Reaction</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24485</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>23352</pageFirst>
    <pageLast>23360</pageLast>
    <pageNumber/>
    <edition/>
    <issue>38</issue>
    <volume>123</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-10-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Point Defect-Mediated Interface Formation and Appearance of a Cooper Minimum for AlOₓ Atomic-Layer-Deposited Films on CH₃NH₃PbI₃</title>
    <abstract language="eng">We report on the interaction of CH₃NH₃PbI₃ substrates with AlOx films prepared by atomic layer deposition at room temperature. We use synchrotron radiation-based photoemission spectroscopy and study the Pb 4f, I 3d, and Al 2p core levels as well as the corresponding valence band states (Pb 5d and O 2p). A Cooper minimum is observed for both the Pb 5d and O 2p states, and it indicates that the bonding at the interface must be covalent. We focus on the electronic properties of the substrate and its interface and identify a delicate charge balance between polaronic and excitonic states in MAPI and AlOₓ. The perovskite vacancy sites, identified by changes in the core-level intensities, mediate the charge balance and covalent interaction.</abstract>
    <parentTitle language="eng">The Journal of Physical Chemistry. C</parentTitle>
    <identifier type="doi">10.1021/acs.jpcc.9b05282</identifier>
    <identifier type="issn">1932-7447</identifier>
    <identifier type="issn">1932-7455</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Emilia</firstName>
      <lastName>Pożarowska</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃-CH₃NH₃PbI₃ interaction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cooper minimum</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>point defects in CH₃NH₃PbI₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure of CH₃NH₃PbI₃</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24598</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>11</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-11-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Al2O3-Atomic Layer Deposited Films on CH3NH3PbI3 : Intrinsic Defects and Passivation Mechanisms</title>
    <abstract language="eng">The initial interaction of atomic layer deposited films of Al2O3 at room temperature on CH3NH3PbI3 (MAPI) films is studied. Synchrotron radiation–based photoelectron spectroscopy is applied to analyze the initial changes in the Al-derived features by comparing samples with different Al2O3 film thicknesses.&#13;
It is found that polarons and excitons, both intrinsic defects of Al2O3, play a key role in the interface formation. The polaronic states uptake a charge from the MAPI substrate. This charge is transferred to and stabilized in the excitonic state of Al2O3 which is assigned to predominately tetrahedral coordinated Al sites. This charge transfer is initiated by vacancies present in the MAPI substrate and stabilizes a covalent bonding at the Al2O3–MAPI interface but also causes a roughening of the interface which may lead to the formation of grain boundaries.&#13;
On top of the rough interface, 2D Al2O3 clusters with an increasing number of octahedrally coordinated Al—O bonds grow, and with increasing Al2O3 coverage, they introduce self-healing of the structural defects.</abstract>
    <parentTitle language="eng">Energy Technology , The Journal of Physical Chemistry C</parentTitle>
    <identifier type="doi">10.1002/ente.201900975</identifier>
    <identifier type="issn">2194-4288</identifier>
    <identifier type="issn">2194-4296</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1900975</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Steve</firstName>
      <lastName>Albrecht</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Kús</lastName>
    </author>
    <author>
      <firstName>Iva</firstName>
      <lastName>Matolinová</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>charge donation and transfer cycles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>covalent interfaces</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>defect monitoring</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>model of Al2O3–CH3NH3PbI3 interactions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>25280</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2190</pageFirst>
    <pageLast>2201</pageLast>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>1</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-02-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation</title>
    <abstract language="eng">The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance−voltage measurements indicate that a (NH4)2S vapor passivation step prior to atomic layer deposition of the oxide effectively lowers the interface state density. Surface and interface chemistry were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of ex situ surface passivation after native oxide removal in HCl solution was examined. It was observed that surface reoxidation occurred during (NH4)2S vapor exposure, leading to the formation of Inx(HPO4)y. S was present on the surface as a sulfide in both surface and subsurface sites. After atomic layer deposition of GAO, sulfates were detected in addition to Inx(HPO4)y, which was confirmed by near-edge X-ray absorptionfine structure analysis. The S in the stack was quantified using reference-free grazing incidence X-rayfluorescence&#13;
analysis. X-ray absorption spectroscopy showed that Gd was oxidized and present in the 3+ oxidation state, most likely as a phosphate close to the InP interface and possibly mixed with sulfates. Energy-dependent SRPES measurements of Al 2p and Gd 4d core levels, complemented by transmission electron microscopy, further suggest that the dielectric layer was segregated. Valence band measurements confirm the effective passivation of InP, indicating unpinning of the surface Fermi level.</abstract>
    <parentTitle language="eng">ACS Applied Electronic Materials</parentTitle>
    <identifier type="doi">10.1021/acsaelm.9b00388</identifier>
    <identifier type="issn">2637-6113</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Dennis H. von</firstName>
      <lastName>Dorp</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Laura</firstName>
      <lastName>Nyns</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Cuypers</lastName>
    </author>
    <author>
      <firstName>Tsvetan</firstName>
      <lastName>Ivanov</lastName>
    </author>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Claudia</firstName>
      <lastName>Fleischmann</lastName>
    </author>
    <author>
      <firstName>Philipp</firstName>
      <lastName>Hönicke</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Olivier</firstName>
      <lastName>Richard</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>De Gendt</lastName>
    </author>
    <author>
      <firstName>Dennis H. C.</firstName>
      <lastName>Lin</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Adelmann</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>III−V</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>InP</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sulfur passivation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gadolinium aluminate</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>rare earth oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
