<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>799</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electrochemical interface modification of CuInS2 thin films</title>
    <abstract language="eng">We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes.</abstract>
    <enrichment key="UBICOIdent">001108</enrichment>
    <enrichment key="UBICOquelle">Thin Solid Films 403-404 (2002)S. 57-61, 0040-6090</enrichment>
    <author>
      <firstName>Mohammed</firstName>
      <lastName>Aggour</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ulrich</firstName>
      <lastName>Stoerkel</lastName>
    </author>
    <author>
      <firstName>Chris</firstName>
      <lastName>Murrell</lastName>
    </author>
    <author>
      <firstName>S. A.</firstName>
      <lastName>Campbell</lastName>
    </author>
    <author>
      <firstName>H.</firstName>
      <lastName>Jungblut</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Lewerenz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin-film solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper indium disulfide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic force microscopy (AFM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron radiation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Solar-Cell</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>806</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>BTU Cottbus, Eigenverlag</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Elektronik mit organischen Materialien</title>
    <abstract language="deu">Plastikelektronik, flexible Solarzellen, intelligente Kleidung, neuartige und maßgeschneiderte Transducer für die Gas-, Flüssigkeits- und Biosensorik, all dies sind Anwendungen, die ohne halbleitende Polymere nicht denkbar wären und die Bereiche erschließen, in denen zur Zeit eine regelrechte Goldgräberstimmung herrscht. Mit wichtigen Beiträgen im Grundlagen- und Anwendungsbereich nimmt die BTU Cottbus an dieser Entwicklung teil, u. a. auch durch eine Kooperation mit dem Institut für Mikrobiologie des Carl-Thiem-Klinikums Cottbus.In diesem Artikel werden die Voraussetzungen für die Konstruktion organischer Feldeffekt-Transistoren mit gassensitiver Gate-Elektrode vorgestellt. Untersuchungen zur elektronischen Struktur des organischen Halbleiters Poly(3-Hexylthiophen), die Anwendung dieses Materials als aktive Schicht in organischen Feldeffekt-Transitoren, die Gassensitivität von Polypyrrolelektroden auf Quarz-Mikrowaagen und die Mikrorstukturierung organischer Elektroden werden beschrieben.</abstract>
    <enrichment key="UBICOIdent">001116</enrichment>
    <enrichment key="UBICOquelle">Forum der Forschung, 6(2002)13, S. 117-121, 0947-6989</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>819</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes</title>
    <abstract language="eng">Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using highresolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. Thespectra of the anodic oxide show strong emission of bulk-like Ga2O3 and some As2O3 with the admixture of suboxides and hydroxides. Ga2O3 and As2O3 arecathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.</abstract>
    <enrichment key="UBICOIdent">001129</enrichment>
    <enrichment key="UBICOquelle">Analytical and Bioanalytical Chemistry 374(2002)4, S. 650 - 653, 1618-2642</enrichment>
    <author>
      <firstName>Martin</firstName>
      <lastName>Beerbom</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Mayer</lastName>
    </author>
    <author>
      <firstName>Wolfram</firstName>
      <lastName>Jaegermann</lastName>
    </author>
    <author>
      <firstName>David R.</firstName>
      <lastName>Batchelor</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GAAS(110)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GaAs</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrochemistry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aqueous electrolytes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface engineering</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>792</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface engineering of photoelectrochemically prepared Si surfaces</title>
    <abstract language="eng">The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.</abstract>
    <enrichment key="UBICOIdent">001101</enrichment>
    <enrichment key="UBICOquelle">Journal of Non-Crystalline Solids 303(2002)1, S. 1-5, 0022-3093</enrichment>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Lewerenz</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Mohammed</firstName>
      <lastName>Aggour</lastName>
    </author>
    <author>
      <firstName>Chris</firstName>
      <lastName>Murrell</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Kanis</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>H.</firstName>
      <lastName>Jungblut</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Mean Free Paths</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Range</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1984</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>215</pageFirst>
    <pageLast>220</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4-6</issue>
    <volume>7</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations</title>
    <abstract language="eng">We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.</abstract>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="issn">1369-8001</identifier>
    <enrichment key="UBICOIdent">002406</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Formanek</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k dielectrics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface reaction</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1960</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-01</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">New chrome free, environmentally friendly methods in chemical processes</title>
    <abstract language="eng">It gives an overview of the research work to develop chrom-free methods in different chemical processes. A new class of materials, the conductive polymers, have been studied extensively for their anticorrosion properties.</abstract>
    <enrichment key="UBICOIdent">002381</enrichment>
    <enrichment key="UBICOquelle">Environmental Science &amp; Pollution Research, Special Issue 3 (2002) 121</enrichment>
    <author>
      <firstName>Alexandros D.</firstName>
      <lastName>Yfantis</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>B.</firstName>
      <lastName>Tzalas</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Lambrakopoulos</lastName>
    </author>
    <author>
      <firstName>E.</firstName>
      <lastName>Anagnostaki</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Alloys</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polypyrrole</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polymers</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2001</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>605</pageFirst>
    <pageLast>610</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>Wiley-VCH</publisherName>
    <publisherPlace>Weinheim</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Corrosion Protection by Conductive Polymers for Magnesium Alloys</title>
    <abstract language="eng">In this work, we present the experimental data related to the effect of the polypyrrole concentration and the film thickness on the corrosion inhibition properties of these novel polymer coatings. The relative corrosion resistance properties of the films formed from the matrix solutions, where polypyrrole was in situ polymerized and in cases where polypyrrole is dispersed in a form of powder (pigment) in the polyaclylic polymer, are further examined. The evaluation of the experimental data provides significant evidence regarding the mechanism of corrosion inhibition, as well as the optimization of the synthesis and application conditions.</abstract>
    <parentTitle language="eng">Magnesium, proceedings of the 6th International Conference on Magnesium Alloys and their Applications, November 2003 in Wolfsburg</parentTitle>
    <identifier type="isbn">3-527-30975-6</identifier>
    <enrichment key="UBICOIdent">002487</enrichment>
    <author>
      <firstName>Alexandros D.</firstName>
      <lastName>Yfantis</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <editor>
      <firstName>Karl Ulrich</firstName>
      <lastName>Kainer</lastName>
    </editor>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>corrosion protection</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>conductive polymers for magnesium alloys</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>polypyrrole</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1986</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>229</pageFirst>
    <pageLast>234</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>144</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An FTIR study of the role of H2O and D2O in the aging mechanism of conductive polypyrroles</title>
    <abstract language="eng">In the present work the role of H2O was studied by conductivity measurements and FTIR spectroscopy using the isotopic effect of deuterium in order to elucidate the aging mechanism of conductivity of polypyrroles. Polypyrrole was prepared with PTS as a dopant, by using deuterated water. Conductivity measurements showed changes due to structural water and atmospheric humidity. The FTIR absorption spectra indicated that the most probable structure of polypyrrole is the two-dimensional one. This finding could be attributed to the inhibition of polypyrrole's IR modes. The infrared spectrum analysis show that the gamma -NH bending mode of pyrrole has significantly changed after polymerization of pyrrole and this result is in accordance with XPS measurements.</abstract>
    <parentTitle language="eng">Synthetic Metals</parentTitle>
    <identifier type="issn">0379-6779</identifier>
    <identifier type="doi">10.1016/j.synthmet.2004.03.006</identifier>
    <enrichment key="UBICOIdent">002472</enrichment>
    <author>
      <firstName>Stelios</firstName>
      <lastName>Lamprakopoulos</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Jane</firstName>
      <lastName>Anastassopoulou</lastName>
    </author>
    <author>
      <firstName>Theophile</firstName>
      <lastName>Theophanides</lastName>
    </author>
    <author>
      <firstName>Alexandros D.</firstName>
      <lastName>Yfantis</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polypyrrole</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Conductivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FTIR</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Isotopic effect</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1988</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
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