<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>17119</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 150</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Spectroscopic investigation of the nitrogen role in organic-inorganic perovskite films</title>
    <abstract language="eng">Over the past few years, a wide range of device architectures employing organic-inorganic metal halide perovskite absorbers has been reported, with efficiencies exceeding 20%. Despite the tremendous progress, a number of key issues must be resolved before the wide-spread com-&#13;
mercialization will be possible. Some of the primary challenges include lead toxicity, long-term stability, and fast degradation upon exposure to humid atmosphere. Recent computational and experimental studies suggest that hybrid metal-halide perovskites act as an ionic-electronic conductor. The study of vacancy-mediated migration of I−, Pb2+ and CH3NH3− ions and their relative activation energies suggests that migration of halide vacancies, to and from the interfaces in the solar cell during its operation, is the main conduction mechanism. In this work, we are presenting high resolution synchrotron-based spectroscopic study, which indicates that the contribution of nitrogen into the conduction mechanism of methyl ammonium lead iodide-based (CH3NH3PbI3) perovskite films should not be neglected. The N1s core level and resonant X-ray photoelectron spectroscopy at the N1s-egde of the CH3NH3PbI3 films are discussed in detail.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2016/conference/regensburg/part/cpp/session/11/contribution/7?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 51</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Wojciechowski</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nitrogen</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17120</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">CVD and ALD deposited hafnia: an XPS study</title>
    <abstract language="eng">In this work we report on Hafnium oxide deposited on silicon by means of chemical vapour deposition (CVD) and atomic layer deposition (ALD) using tetrakis-di-methyl-amino-Hf (TDMAHf) and water as precursors. We have studied the behavior of ALD and CVD at intermediate temperatures: ALD was performed outside the ALD window (T&gt;300∘C), whereas CVD was performed at low temperatures, approaching the ALD window (T&lt;400∘C). In this way we wanted to elucidate about the possibility of taking advantage of the conformality of ALD films and the high growth rate of CVD at the same time. Comparable sets of samples prepared with the two methods were measured by X-ray photoelectron spectroscopy and atomic force microscopy in order to determine differences between them: growth rate, Hf/O ratio, valence band positions and roughness are discussed and compared as a function of deposition temperature and process parameters.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/30/contribution/1?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>HfO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>chemical vapor deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17121</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic layer deposition of Ga2O3 using Tri-methyl-Gallium and H2O</title>
    <abstract language="eng">Considering numerous applications such as transparent conducting oxides, gas sensors, photovoltaic applications, deep UV photo detectors, field effect transistors and  spintronics gallium oxide  (Ga2O3) has earned quite a lot of focus recently. Various techniques have already been demonstrated to  produce Ga2O3 naming evaporation, sputtering, pulsed laser deposition, chemical vapor deposition and atomic layer deposition (ALD). Among them, ALD gives  the possibility of controlling the thickness at the atomic level, good step coverage and delivers dense and homogeneous films. In this contribution, we report on the growth of ALD Ga2O3 using trimethylgallium (TMG) and H2O as metal and oxygen  precursors, respectively. We deposited thin Ga2O3 films on Si, TiO2, Al2O3 and RuO2 over a temperature range of 150-300°C and characterized  them by X-ray photo emission  spectroscopy and atomic force microscopy. From this study, we are able to discuss the influence of the temperature on the growth dynamics of Ga2O3 and its chemical composition.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/4/contribution/2?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Sakeb Hasan</firstName>
      <lastName>Choudhury</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ga2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si, TiO2 , Al2O3 and RuO2 substrates</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17122</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An efficient Si photo cathode for a wide range of electrolyte pH values</title>
    <abstract language="eng">Hydrogen fuel cells, being environmental friendly to produce energy, are a technology of future. One of the efficient ways to produce hydrogen is solar driven photocatalysis using semiconducting materials as photo electrodes. The choice of electrodes is a crucial factor and is done on the basis of photo corrosion stability, light absorption efficiency, and photocarrier lifetime. P-type Si can be used as photo cathode to produce H2 by direct photocatalysis. Si cathodes can be used in acidic electrolytes to have efficient photo catalytic activity but they are unstable in alkaline electrolytes. Therefore, to use both Si electrodes in the same electrolyte, their chemical stability should be extended over a wide range of pH. To this purpose we modified the surface of a p-type Si photocathode with very thin films of TiO2 grown by atomic layer deposition (ALD). We found that the modified Si cathode shows an increased photoresponse and a lower onset potential with respect to the pristine surface and an increased stability at various pH values.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/4/contribution/3?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Katarzyna</firstName>
      <lastName>Skorupska</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Lewerenz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si photoelectrode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>water splitting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TiO2</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17123</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Sabatier based CO2-Methanation of flue gas in conventional power plants</title>
    <abstract language="eng">Already discovered by Paul Sabatier in 1902 the Hydrogenation according to CO2 + 4H2 -&gt;CH4 + 2H2O nowadays is discussed in the course of the ’Power-to-Gas’ approach to utilize excess energy from renewable electricity generation in times of oversupply of electricity. We&#13;
investigate the behavior of this process in a simulated flue gas atmosphere of conventional base load power plants, which could be used as constant sources of the reactant CO2. Therefore the influence of different flue gas compositions such as varying contents of nitrogen and&#13;
residual oxygen are tested in a laboratory scale. The heterogeneous catalysis process is investigated with regard to conversion rates, yield and selectivity and long-term stability of the Ni-catalyst. Earlier results of stable operating conditions in a 1:1 mixture of nitrogen and reactants, which is a typical ratio for flue gas in conventional power plants, could be confirmed in a first step.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/o/session/36/contribution/70?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 51</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michael</firstName>
      <lastName>Fleige</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>methanation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>flue gas</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>power plant</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sabatier reaction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>power to gas</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17124</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Resonant Photoemission at the O1s threshold to characterize In2O3 single crystals</title>
    <abstract language="eng">We report on spectroscopic  investigations on In2O3 single crystals. We focus on the detailed analysis of the  O1s resonance profile by resonant photoelectron   spectroscopy (resPES). From   these we analyze the electronic structure and assign the O2p- and In5sp state to build the  valence band and the conduction band in different contributions, respectively. This is deduced from constant final state spectra on the O-KLL-Auger along the O K-edge and In M4,5-edge and a comparison to the corresponding  X-ray  absorption spectroscopy data. We also identify several types of defects. A broad band of oxygen derived defects is identified in the valence band and extends throughout the gap. Small polarons are attributed to cause an anti-resonance in the constant initial  states around the O1s threshold. In addition, an Auger decay separated by the O-KLL is present at O-K resonance and indicates the existence of localized charge transfer  states which involves In5sp  states. Finally, we are  able to distinguish two different oxygen species from the  resPES data. One corresponds  to theintrinsic In2O3 structure and the other is a non-corresponding species.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/mm/session/15/contribution/57?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Zbigniew</firstName>
      <lastName>Galazka</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In2O3</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17125</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Reaction kinetics of the Sabatier Reaction in a demonstration plant</title>
    <abstract language="eng">We currently build up a demonstration plant for the direct catalytic conversion of CO2 into methane according to the Sabatier reaction CO2+4H2→CH4+2H2O. We have already reached conversion rates higher than 90% and a&#13;
selectivity close to unity in our laboratory experiments with NiO based catalysts. A good long term stability was obtained with a reactant gas flow density of 0.8 l/min cm2·&#13;
at 350∘C. We will study the process now on a larger scale with a factor 10000. The process is controlled via mass flow controllers with a throughput of 20m3/h H2 and&#13;
5m3/h CO2 at an inlet gas pressure of up to 15 bar, the temperature is regulated by a PID multichannel controller. As water is a by-product we use an efficient cooling trap for its separation form the obtained methane. The reaction products are analyzed by a quadrupole mass spectrometer under reaction conditions. We start our experiments in using clean CO2 and H2. Later experiments will involve industrial quality (oxy-fuel) conditions also. Goal of this project is to determine the performance of the catalytic process under conditions which enable an industrial implementation in energy storage concepts. In this contribution we report of the design of a&#13;
demonstration plant and on first experiments concerning the kinetics within the system.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/o/session/20/contribution/5?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Johannes</firstName>
      <lastName>Israel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Fabian</firstName>
      <lastName>Rachow</lastName>
    </author>
    <author>
      <firstName>Guido</firstName>
      <lastName>Beuckert</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>methanation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sabatier reaction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reaction kinetics</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17126</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Sabatier based Methanation of carbon dioxide and Catalyst stability against contaminations</title>
    <abstract language="eng">The Sabatier-Reaction [CO2+4H2→CH4+2H2O] represents a possible way for the reduction and utilization of CO2 produced in the oxy-fuel combustion process. While using different ruthenium and nickel based catalysts we studied the catalytic performance with quadrupole mass spectroscopy and IR-spectroscopy in terms of conversion of CO2,yield of CH4, selectivity and stability. Conversions of up to 90% and a selectivity of well above 95% could be achieved. Further studies focus on the long term stability, especially with the influence of contaminations like SOx and NOx as they may occur in oxy-fuel or flue gas and could greatly reduce the life time of a catalyst. We investigate the limits of Ni based catalysts for those additives. However, technical oxy-fuel gas seems to have no particular effect on the activity of a commonly used NiO-catalyst when compared to quasi pure CO2 , showing only a small drop of performance after five days with a constant conversion rate of over 80% at the end.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/o/session/20/contribution/4?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Fabian</firstName>
      <lastName>Rachow</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>methanation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sabatier reaction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>catalyst contaminations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>NOx and SOx</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>long term stability</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17127</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Multiple Auger Decay at resonant photo-excitation in carbon thin films</title>
    <abstract language="eng">We use resonant photoemission at the C1s edge to study the electronic structure of HOPG, graphene flakes and monolayer graphene. We find remarkable differences in the profile of the Auger decay channels, which we attribute to an additional multiple-Auger with a three-hole final&#13;
state. A prerequisite for the appearance of this decay mechanism is the existence of localized excitonic states, which cause the appearance of the multiple Auger decay. Defects (pits, holes, steps and kinks) can act as localized excitonic states. We use those effects to identify the existence and the quantity of such defect states within the pi*-band regime in carbon thin films, because the intensity of the three-hole Auger decay is varying with the defect density of the carbon films.&#13;
The defect-excitonic states can be either localized in the band-gap at the M-point or in case of surface defects like steps, kinks or pits even at the K-point by losing the pure sp2 character of the films. We find that the appearance of the multiple Auger decay is different for multilayer and monolayer graphene. In particular the interaction of impurities leads to broadening of the C1s core levels. The three-hole Auger decay spectroscopy is a new method to detect such contaminations with a high sensitivity.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/hl/session/52/contribution/6?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Städter</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Auger decay</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multiple decay</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>carbon thin films</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17128</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The Co2p spin and oxidation state in Co-PI catalysts</title>
    <abstract language="eng">The electronic structure of cobalt based catalysts used for photocatalytic water splitting in solar cells is analyzed using synchrotron radiation photoelectron spectroscopy. The catalyst films are prepared by electrochemical deposition. We employ a X-ray photoelectron spectroscopy study to analyze the Co2p and O1s core levels, absorption edges and valence bands. We discuss our resonant data in terms of the partial density of states of the valence and conduction band. We find a difference in the Co oxidation state as a function of film thickness (deposited charge). From the relative amount of Co, O, K and P we favor the molecular cobaltate cluster-like structure as the structural motif of the Co-PI catalyst. Further, at resonant PES at the Co2p edge we find the Co2p partial DOS to exhibit no sharp features next to the VBM, instead there is a broad emission at around 6eV below EFerrmi. The former are found in LiCoO2 and other Co-oxide systems with a Co3+ ground state. We attribute such sharp features to the low spin (LS) configuration of Co3+ and deduce that in the Co catalysts there is no evidence for the corresponding LS contributions. Our data prove the Co2+ ground state and demonstrate that it is exclusively in the Co3d7 high spin state in the pristine catalyst films.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/35/contribution/9?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoemission spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cobalt based catalyst</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>water splitting</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
