<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>9645</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>034903</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>111</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure</title>
    <abstract language="eng">Na has deliberately been incorporated into Cu(In,Ga)Se2 (“CIGSe”) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 °C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Nasurface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and — for very high Na contents — indications for the formation of a (Cu,Na)–(In,Ga)–Se like compound. With increasing Nasurface content, also a shift of the photoemission lines to lower binding energies could be identified, which we interpret as a reduction of the downward band bending toward the CIGSe surface explained by the Na-induced elimination of InCu defects.</abstract>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="issn">1089-7550</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <submitter>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </submitter>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>X.</firstName>
      <lastName>Song</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Caballero</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Dominic</firstName>
      <lastName>Gerlach</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Kaufmann</lastName>
    </author>
    <author>
      <firstName>Hans-Werner</firstName>
      <lastName>Schock</lastName>
    </author>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <collection role="old_institute" number="01002">JP Photovoltaik</collection>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>9648</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>103908-1</pageFirst>
    <pageLast>103908-4</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>101</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Intergrain variations of the chemical and electronic surface structure of polycrystalline Cu(In,Ga)Se2 thin-film solar cell absorbers</title>
    <abstract language="eng">The μm-scale spatial distribution of the elements of polycrystalline Cu(In1− x Ga x )Se2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x= Ga/(In+ Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <submitter>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </submitter>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <author>
      <firstName>Ingrid</firstName>
      <lastName>Repins</lastName>
    </author>
    <author>
      <firstName>M. A.</firstName>
      <lastName>Contreras</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Herrero-Albillos</lastName>
    </author>
    <author>
      <firstName>L.</firstName>
      <lastName>Tati-Bismaths</lastName>
    </author>
    <author>
      <firstName>F.</firstName>
      <lastName>Kronast</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Noufi</lastName>
    </author>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <collection role="old_institute" number="01002">JP Photovoltaik</collection>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>9652</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>483</pageFirst>
    <pageLast>487</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>3</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study</title>
    <abstract language="eng">The chemical and electronic properties of a-&#13;
Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures&#13;
are studied by hard X-ray photoelectron spectroscopy (HAXPES).&#13;
Using a combination of different X-ray excitation energies&#13;
and deliberate sample design, we were able to select the probed&#13;
volume, i.e., the silicon capping layer only or the silicon and zinc&#13;
oxide layer (including the buried interface). For the a-Si:H(B) material,&#13;
we find a higher deposition rate and a smaller value for the&#13;
modified Auger parameter than for μc-Si:H(B). In addition, we&#13;
find indications of a pronounced band bending limited to the very&#13;
surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more&#13;
distinct in the latter case.</abstract>
    <parentTitle language="eng">IEEE journal of photovoltaics</parentTitle>
    <identifier type="issn">2156-3381</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <submitter>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </submitter>
    <author>
      <firstName>Dominic</firstName>
      <lastName>Gerlach</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Wippler</lastName>
    </author>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <author>
      <firstName>Manuel</firstName>
      <lastName>Wimmer</lastName>
    </author>
    <author>
      <firstName>Mickaël</firstName>
      <lastName>Lozac'h</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Shigenori</firstName>
      <lastName>Ueda</lastName>
    </author>
    <author>
      <firstName>Hideki</firstName>
      <lastName>Yoshikawa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Lips</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Rech</lastName>
    </author>
    <author>
      <firstName>Masatomo</firstName>
      <lastName>Sumiya</lastName>
    </author>
    <author>
      <firstName>Kaoru</firstName>
      <lastName>Kobayashi</lastName>
    </author>
    <author>
      <firstName>Mihaela</firstName>
      <lastName>Gorgoi</lastName>
    </author>
    <author>
      <firstName>Jürgen</firstName>
      <lastName>Hüpkes</lastName>
    </author>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <collection role="old_institute" number="01002">JP Photovoltaik</collection>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>9654</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>828</pageFirst>
    <pageLast>832</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>3</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Surface Off-Stoichiometry of CuInS2 Thin-Film Solar Cell Absorbers</title>
    <abstract language="eng">In this paper, X-ray photoelectron and X-ray-excited&#13;
Auger electron spectroscopy was used to investigate the chemical&#13;
surface structure of CuInS2 thin-film solar cell absorbers.We find&#13;
that the [In]/[Cu] surface composition can vary between 1.6 (±0.4)&#13;
and 3.7 (±0.7), depending on relatively minor variations in the absorber&#13;
formation process and/or whether additional wet-chemical&#13;
treatments are performed. These variations are primarily due to&#13;
differences in the Cu surface concentration. The corresponding&#13;
change of the modified In Auger parameter is interpreted as being&#13;
indicative of a change in the chemical environment of In as a&#13;
function of Cu off-stoichiometry.</abstract>
    <parentTitle language="eng">IEEE Journal of Photovoltaics</parentTitle>
    <identifier type="issn">2156-3381</identifier>
    <identifier type="url">https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6380521</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <submitter>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </submitter>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Klaer</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Nicolas</firstName>
      <lastName>Barreau</lastName>
    </author>
    <author>
      <firstName>Lothar</firstName>
      <lastName>Weinhardt</lastName>
    </author>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <author>
      <firstName>Clemens</firstName>
      <lastName>Heske</lastName>
    </author>
    <author>
      <firstName>Hans-Werner</firstName>
      <lastName>Schock</lastName>
    </author>
    <collection role="old_institute" number="01002">JP Photovoltaik</collection>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>9656</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>193709</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>19</issue>
    <volume>113</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lateral inhomogeneity of the Mg/(Zn+Mg) composition at the (Zn,Mg)O/CuIn(S,Se)2 thin-film solar cell interface revealed by photoemission electron microscopy</title>
    <abstract language="eng">Spatial variations in the chemical composition of the (Zn,Mg)O/CuIn(S,Se)2 thin-film solar cell interface were studied by photoemission electron microscopy (PEEM). Energy filtered PEEM&#13;
images indicate significant differences in the magnesium and zinc distribution. Local photoemission measurements reveal a relative difference in the derived Mg/(ZnþMg) composition of the (Zn,Mg)O material of up to (11.460.7)%, which can be expected to induce band gap&#13;
fluctuations of (60630) meV. Furthermore, local areas with significant accumulations of sodium could be observed.</abstract>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="doi">10.1063/1.4804413</identifier>
    <identifier type="issn">1520-8850</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <submitter>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </submitter>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>J.-P.</firstName>
      <lastName>Theisen</lastName>
    </author>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <author>
      <firstName>Felix</firstName>
      <lastName>Erfurth</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Dominic</firstName>
      <lastName>Gerlach</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Haas</lastName>
    </author>
    <author>
      <firstName>L.</firstName>
      <lastName>Tati-Bismaths</lastName>
    </author>
    <author>
      <firstName>F.</firstName>
      <lastName>Reinert</lastName>
    </author>
    <author>
      <firstName>F.</firstName>
      <lastName>Kronast</lastName>
    </author>
    <author>
      <firstName>T. P.</firstName>
      <lastName>Niesen</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Palm</lastName>
    </author>
    <author>
      <firstName>Sven</firstName>
      <lastName>Visbeck</lastName>
    </author>
    <author>
      <firstName>Lothar</firstName>
      <lastName>Weinhardt</lastName>
    </author>
    <collection role="old_institute" number="01002">JP Photovoltaik</collection>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>9658</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>023903</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>103</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-10-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact</title>
    <abstract language="eng">The electronic structure of the interface between the boron-doped oxygenated amorphous silicon “window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (−2.87 ± 0.27) eV and (−3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="issn">1077-3118</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <submitter>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </submitter>
    <author>
      <firstName>Mihaela</firstName>
      <lastName>Gorgoi</lastName>
    </author>
    <author>
      <firstName>Dominic</firstName>
      <lastName>Gerlach</lastName>
    </author>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Wippler</lastName>
    </author>
    <author>
      <firstName>Manuel</firstName>
      <lastName>Wimmer</lastName>
    </author>
    <author>
      <firstName>Mickaël</firstName>
      <lastName>Lozac'h</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Leonie Anna</firstName>
      <lastName>Mück</lastName>
    </author>
    <author>
      <firstName>M.</firstName>
      <lastName>Meier</lastName>
    </author>
    <author>
      <firstName>Shigenori</firstName>
      <lastName>Ueda</lastName>
    </author>
    <author>
      <firstName>Hideki</firstName>
      <lastName>Yoshikawa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Lips</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Rech</lastName>
    </author>
    <author>
      <firstName>Masatomo</firstName>
      <lastName>Sumiya</lastName>
    </author>
    <author>
      <firstName>Jürgen</firstName>
      <lastName>Hüpkes</lastName>
    </author>
    <author>
      <firstName>Kaoru</firstName>
      <lastName>Kobayashi</lastName>
    </author>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <collection role="old_institute" number="01002">JP Photovoltaik</collection>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>18979</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>29628</pageFirst>
    <pageLast>29636</pageLast>
    <pageNumber/>
    <edition/>
    <issue>43</issue>
    <volume>8</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Synthesis of Dispersible Mesoporous Nitrogen-Doped Hollow Carbon Nanoplates with Uniform Hexagonal Morphologies for Supercapacitors</title>
    <parentTitle language="deu">ACS Applied Materials &amp; Interfaces</parentTitle>
    <identifier type="doi">10.1021/acsami.6b08946</identifier>
    <identifier type="issn">1944-8244</identifier>
    <identifier type="issn">1944-8252</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jie</firstName>
      <lastName>Cao</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Charl J.</firstName>
      <lastName>Jafta</lastName>
    </author>
    <author>
      <firstName>Jiang</firstName>
      <lastName>Gong</lastName>
    </author>
    <author>
      <firstName>Qidi</firstName>
      <lastName>Ran</lastName>
    </author>
    <author>
      <firstName>Xianzhong</firstName>
      <lastName>Lin</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Regan G.</firstName>
      <lastName>Wilks</lastName>
    </author>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>Jiayin</firstName>
      <lastName>Yuan</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Ballauff</lastName>
    </author>
    <author>
      <firstName>Yan</firstName>
      <lastName>Lu</lastName>
    </author>
    <collection role="institutes" number="1523">JP Photovoltaik</collection>
  </doc>
  <doc>
    <id>19008</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>857</pageFirst>
    <pageLast>862</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The Heavily Intermixed In2S3/Cu(In,Ga)Se2 Interface as Revealed by Photoelectron and Soft X-ray Emission Spectroscopy</title>
    <parentTitle language="eng">2013 IEEE 39th Photovoltaic Specialists Conference, (PVSC 2013), Tampa, Florida, USA, 16 - 21 June 2013</parentTitle>
    <identifier type="doi">10.1109/PVSC.2013.6744280</identifier>
    <identifier type="isbn">978-1-4799-3300-6</identifier>
    <identifier type="isbn">978-1-4799-3299-3</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Marcus</firstName>
      <lastName>Bär</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>François</firstName>
      <lastName>Couziniè-Devy</lastName>
    </author>
    <author>
      <firstName>Roberto Felix</firstName>
      <lastName>Duarte</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Klaer</lastName>
    </author>
    <author>
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