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    <id>14051</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>383</pageFirst>
    <pageLast>393</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Trans Tech Publ.</publisherName>
    <publisherPlace>Durnten-Zurich [u.a.]</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>IHP, IKZ</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Luminescence from Germanium and Germanium on Silicon</title>
    <parentTitle language="eng">Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.205-206.383</identifier>
    <identifier type="issn">1662-9779</identifier>
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    <enrichment key="UBICOseries">Solid state phenomena ; 205/206</enrichment>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Nikolay V.</firstName>
      <lastName>Abrosimov</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
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  <doc>
    <id>24762</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>1</issue>
    <volume>1190</volume>
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    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-11-26</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon</title>
    <abstract language="eng">Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.</abstract>
    <parentTitle language="eng">Journal of Physics: Conference Series</parentTitle>
    <identifier type="doi">10.1088/1742-6596/1190/1/012005</identifier>
    <identifier type="issn">1742-6596</identifier>
    <identifier type="issn">1742-6588</identifier>
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    <author>
      <firstName>Maxim</firstName>
      <lastName>Trushin</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>A.</firstName>
      <lastName>Varlamov</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Loshachenko</lastName>
    </author>
    <author>
      <firstName>Oleg F.</firstName>
      <lastName>Vyvenko</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
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