<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>794</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Si(001) surface oxidation by N2O</title>
    <abstract language="eng">Ultra-thin homogeneous oxynitride films are prepared on Si(001). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2Oat altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N2O pressure and the Si temperature. This isillustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) andphotoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitridelayers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.</abstract>
    <enrichment key="UBICOIdent">001103</enrichment>
    <enrichment key="UBICOquelle">Journal of Non-Crystalline Solids 303(2002)1, S. 6-11, 0022-3093</enrichment>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>SI(100)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dielectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>SI</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>NO</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>795</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electric contacts on conductive polymers: sodium on poly(3-hexylthiophene-2,5-diyl)</title>
    <abstract language="eng">Sodium as a model contact with low work function on regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) films was investigated. The interface was studied by X-rayand ultraviolet photoelectron spectroscopy in the range of 0.13 up to 1.8 metal atoms per hexylthiophene unit. In the range of 0.13-0.26 sodium atoms per hexylthiophenering we find a change inthe surface potentials which is interpreted as a discharge of positive surface charges. Sodium exposures above 0.5 sodium atoms perhexylthiophene unit exhibit a reduction of the thiophene sulfur due to the formation of sodium sulfide and breaking of the thiophene ring.</abstract>
    <enrichment key="UBICOIdent">001104</enrichment>
    <enrichment key="UBICOquelle">Synthetic Metals 127 (2002) S. 273-277, 0379-6779</enrichment>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>799</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electrochemical interface modification of CuInS2 thin films</title>
    <abstract language="eng">We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes.</abstract>
    <enrichment key="UBICOIdent">001108</enrichment>
    <enrichment key="UBICOquelle">Thin Solid Films 403-404 (2002)S. 57-61, 0040-6090</enrichment>
    <author>
      <firstName>Mohammed</firstName>
      <lastName>Aggour</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ulrich</firstName>
      <lastName>Stoerkel</lastName>
    </author>
    <author>
      <firstName>Chris</firstName>
      <lastName>Murrell</lastName>
    </author>
    <author>
      <firstName>S. A.</firstName>
      <lastName>Campbell</lastName>
    </author>
    <author>
      <firstName>H.</firstName>
      <lastName>Jungblut</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Lewerenz</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin-film solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper indium disulfide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic force microscopy (AFM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron radiation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Solar-Cell</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>802</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">PEEM - a spectromicroscopic tool for mc-Si surface evaluation</title>
    <abstract language="eng">The photo emission electron microscope (PEEM) with its direct imaging of the sample surface is a convenient tool for fast evaluation of large sample areas. It is possibleto handle samples with a size of 30 mm x 30 mm.With PEEM it is possible to visualise grain boundaries and crystal displacements without removing the native oxide. No special sample treatment is needed exceptchemical polishing of the sample surface and a HF-dip to obtain a thin (1 ... 2 nm) oxide layer.The quality of that oxide was proofed by high resolution photo electron spectroscopy (PES) at a synchrotron. The results were compared to native oxide onsingle-crystalline Si and no suboxides (e.g. SiO) were found. Our spectromicroscopic PEEM measurements show no difference in the oxide qualities of different grainsand on grain boundaries or crystal displacements. Furthermore no difference in the binding energy of Si2p core levels were found.In addition to grain boundaries other spot-like features were found on the sample surface. These could be identified in some cases as precipitation of Ca underneath thenative oxide.</abstract>
    <enrichment key="UBICOIdent">001111</enrichment>
    <enrichment key="UBICOquelle">Solar Energy Materials and Solar Cells 72 (2002)1-4, S. 517-523, 0927-0248</enrichment>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multicrystalline silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PEEM</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>806</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>BTU Cottbus, Eigenverlag</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Elektronik mit organischen Materialien</title>
    <abstract language="deu">Plastikelektronik, flexible Solarzellen, intelligente Kleidung, neuartige und maßgeschneiderte Transducer für die Gas-, Flüssigkeits- und Biosensorik, all dies sind Anwendungen, die ohne halbleitende Polymere nicht denkbar wären und die Bereiche erschließen, in denen zur Zeit eine regelrechte Goldgräberstimmung herrscht. Mit wichtigen Beiträgen im Grundlagen- und Anwendungsbereich nimmt die BTU Cottbus an dieser Entwicklung teil, u. a. auch durch eine Kooperation mit dem Institut für Mikrobiologie des Carl-Thiem-Klinikums Cottbus.In diesem Artikel werden die Voraussetzungen für die Konstruktion organischer Feldeffekt-Transistoren mit gassensitiver Gate-Elektrode vorgestellt. Untersuchungen zur elektronischen Struktur des organischen Halbleiters Poly(3-Hexylthiophen), die Anwendung dieses Materials als aktive Schicht in organischen Feldeffekt-Transitoren, die Gassensitivität von Polypyrrolelektroden auf Quarz-Mikrowaagen und die Mikrorstukturierung organischer Elektroden werden beschrieben.</abstract>
    <enrichment key="UBICOIdent">001116</enrichment>
    <enrichment key="UBICOquelle">Forum der Forschung, 6(2002)13, S. 117-121, 0947-6989</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>790</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED</title>
    <abstract language="eng">We have studied the surface chemistry of 6H-SiC(0001) and 6H-SiC (000 (1) over bar) after wet-chemical treatment using photoelectron spectroscopy (PES) andlow-energy electron diffraction (LEED). The origin of chemically shifted components in the Si2p and C1s spectra is discussed in the light of previous studies onwet-chemically prepared surfaces and on silicate adlayer reconstructed surfaces. On 6H-SiC(0001) an ordered silicate adlayer was prepared by etching the surface withsulfuric acid based agents.</abstract>
    <enrichment key="UBICOIdent">001099</enrichment>
    <enrichment key="UBICOquelle">Materials science forum 389-393(2002) pp. 717-720, 0255-5476</enrichment>
    <author>
      <firstName>N.</firstName>
      <lastName>Sieber</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Th.</firstName>
      <lastName>Seyller</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Graupner</lastName>
    </author>
    <author>
      <firstName>L.</firstName>
      <lastName>Ley</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>David R.</firstName>
      <lastName>Batchelor</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Core level</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Synchrotron radiation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Wet-chemical preparation OXIDE</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1245</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>751</pageFirst>
    <pageLast>757</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>5</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Synthesis of dihydroxy silicon phthalocyanine tetrasulfonic acid and poly-µ-oxo silicon phthalocyanine tetrasulfonic acid</title>
    <parentTitle language="eng">Journal of Porphyrins and Phthalocyanines</parentTitle>
    <identifier type="issn">1099-1409</identifier>
    <identifier type="issn">1088-4246</identifier>
    <enrichment key="UBICOIdent">001575</enrichment>
    <author>
      <firstName>A. G.</firstName>
      <lastName>Gürek</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Günter</firstName>
      <lastName>Appel</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1247</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>109</pageFirst>
    <pageLast>113</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3-4</issue>
    <volume>136</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Spectro-Microscopic Approach for Thin Film Analysis Grain Boundaries in mc-Si and Sn/SnO2 Nano Particles</title>
    <parentTitle language="eng">Microchimica Acta</parentTitle>
    <identifier type="issn">1436-5073</identifier>
    <identifier type="issn">0026-3672</identifier>
    <enrichment key="UBICOIdent">001577</enrichment>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Alexandros D.</firstName>
      <lastName>Yfantis</lastName>
    </author>
    <author>
      <firstName>David R.</firstName>
      <lastName>Batchelor</lastName>
    </author>
    <author>
      <firstName>Günter</firstName>
      <lastName>Appel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1250</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Band Bending in Doped Conducting Polypyrrole Interaction with Silver</title>
    <enrichment key="UBICOIdent">001580</enrichment>
    <enrichment key="UBICOquelle">Synthetic Metals, Vol. 122 Iss. 2, 249-261.</enrichment>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Günter</firstName>
      <lastName>Appel</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1251</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Conductivity of Silver exposed Polypyrrole Films</title>
    <enrichment key="UBICOIdent">001581</enrichment>
    <enrichment key="UBICOquelle">Synthetic Metals, Vol. 122 Iss. 1, 91-93 2001</enrichment>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Günter</firstName>
      <lastName>Appel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1252</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of HF and ozone treated SiC surfaces</title>
    <enrichment key="UBICOIdent">001582</enrichment>
    <enrichment key="UBICOquelle">Materials Science Forum, Vol. 353-356, 219-222 2001</enrichment>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>David R.</firstName>
      <lastName>Batchelor</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <author>
      <firstName>Ingemar</firstName>
      <lastName>Lundström</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1253</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Oxide growth on SiC (0001) surfaces</title>
    <enrichment key="UBICOIdent">001583</enrichment>
    <enrichment key="UBICOquelle">Applied Surface Science Vol. 184, 342-347.</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Th.</firstName>
      <lastName>Seyller</lastName>
    </author>
    <author>
      <firstName>L.</firstName>
      <lastName>Ley</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1962</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>177</pageFirst>
    <pageLast>182</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>76</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Orientation studies of Si-Phthalocyanines sulfonic acids cast on SiOx substrates</title>
    <abstract language="eng">Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-7-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines.</abstract>
    <parentTitle language="eng">Applied Physics / A</parentTitle>
    <identifier type="issn">1432-0630</identifier>
    <identifier type="doi">10.1007/s003390201320</identifier>
    <enrichment key="UBICOIdent">002383</enrichment>
    <author>
      <firstName>Günter</firstName>
      <lastName>Appel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>H.</firstName>
      <lastName>Ade</lastName>
    </author>
    <author>
      <firstName>A. G.</firstName>
      <lastName>Gürek</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Stadler</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
