<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>23410</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Universität des Saarlandes</publisherName>
    <publisherPlace>Saarbrücken</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-01-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Raman spectroscopic study on the formation of Cu3Si</title>
    <abstract language="eng">The term “direct synthesis” is defined in the literature as the reactions between silicon and methyl chloride, hydrogen chloride and other reagents like chlorobenzene and ethyl chloride to yield various alkyl- or aryl substituted chlorosilanes.[1] These reactions have two features in common: (1) The reactivity of silicon - in terms of reaction start temperature, reaction rate and silane product distribution - is originated and controlled by the interaction with metals. (2) The reaction is fully under kinetic control since the formed silanes are the thermodynamically least stable products in the system Si-H-Cl-C.[2] Several authors consider Cu3Si as the catalytically active phase in the direct synthesis. It is assumed, that CuCl formed under the conditions of the direct synthesis reacts with Si according to Eq. 1 and 2 to yield Cu3Si.[1]&#13;
     (1)    and            (2)&#13;
The present work describes a Raman microscopic study of the reaction of Si with Cu and CuCl with special emphasize given to the identification of the Cu3Si phase and the processes occurring in the surrounding bulk Si. There is one pathway in which a solid state reaction[3] between Si and CuCl leads to a massive nucleation of Cu3Si exactly at the position of the Si/CuCl solid-solid interface. The nucleation of Cu3Si creates such an enormous lattice strain so that several high-pressure modifications of Si can be identified at the reaction site and around. The second reaction pathway is controlled by a gas phase transport of CuCl at low temperatures. This transport pathway leads to a spread of Cu in nearest neighborhood close to the CuCl particles as well to a long range transport leading to a nucleation of microscopic Cu3Si precipitates away from the CuCl particles. Further studies on the reactivity of the Cu3Si containing reaction sites were performed and will be discussed in the presentation.</abstract>
    <parentTitle language="eng">9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>André</firstName>
      <lastName>Meißner</lastName>
    </author>
    <editor>
      <firstName>David</firstName>
      <lastName>Scheschkewitz</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Guido</firstName>
      <lastName>Kickelbick</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper silicide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>direct synthesis</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
  <doc>
    <id>25760</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>47</pageFirst>
    <pageLast>56</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject_ref</type>
    <publisherName>The Norwegian University of Science and Technology</publisherName>
    <publisherPlace>Trondheim</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-06-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice strain and phase transformations in silicon introduced by the precipitation of Cu3Si</title>
    <abstract language="eng">The reaction of Si with CuCl was studied by a combination of Raman microscopy, confocal microscopy and SEM-EDX. Two reaction pathways were observed to proceed at the same time. The first one is a solid state reaction between Si and Cu or CuCl that leads to a massive nucleation of Cu3Si exactly at the interfacial contacts between CuCl and Si. This study shows how the presence of the Cu3Si phase can be clearly identified and distinguished from areas simply covered with copper by means of Raman microscopic measurements. The second reaction pathway identified proceeds via a short-range gas phase transport of CuCl at low temperatures. The immediate reaction of the transported CuCl to the Si surface causes the massive spread of Cu in the close neighborhood around the CuCl source particles, however, without a nucleation of Cu3Si. The nucleation of Cu3Si precipitates and the short-range transport of CuCl have a tremendous impact on the underlying Si matrix. Tensile- and compressive-strained Si are generated in the immediate vicinity of the precipitates and at their interface to the surrounding silicon. Indications of high-pressure modifications of Si were found. Those areas of the Si surface which are affected by the short-range transport of CuCl and covered with low concentrations of copper exhibit a significant tensile strain. As recently shown, tensile and compressive strain in Si have a significant impact on the reactivity of Si. It might be assumed that Cu3Si-induced lattice strain in Si affects the reactivity of Si in the Direct Reactions in a similar matter.</abstract>
    <parentTitle language="eng">Silicon for the Chemical and Solar Industry XV</parentTitle>
    <identifier type="isbn">978-82-997357-9-7</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <author>
      <firstName>André</firstName>
      <lastName>Meißner</lastName>
    </author>
    <editor>
      <firstName>Birger</firstName>
      <lastName>Andresen</lastName>
    </editor>
    <submitter>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </submitter>
    <author>
      <firstName>Tim</firstName>
      <lastName>Sieber</lastName>
    </author>
    <editor>
      <firstName>Harry</firstName>
      <lastName>Rong</lastName>
    </editor>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Acker</lastName>
    </author>
    <editor>
      <firstName>Merete</firstName>
      <lastName>Tangstad</lastName>
    </editor>
    <editor>
      <firstName>Halvard</firstName>
      <lastName>Tveit</lastName>
    </editor>
    <editor>
      <firstName>Ingrid</firstName>
      <lastName>Page</lastName>
    </editor>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>direct synthesis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper silicide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cuprous chloride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lattice strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reactivity</value>
    </subject>
    <collection role="institutes" number="2206">FG Physikalische Chemie</collection>
  </doc>
</export-example>
