<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>10420</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Operations Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">W-band flip-chip VCO in thin-film environment</title>
    <abstract language="eng">A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme.</abstract>
    <parentTitle language="eng">2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2005.1516837</identifier>
    <identifier type="isbn">0-7803-8845-3</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Franz-Josef</firstName>
      <lastName>Schmückle</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Hutter</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Klein</lastName>
    </author>
    <author>
      <firstName>Hermann</firstName>
      <lastName>Oppermann</lastName>
    </author>
    <author>
      <firstName>Gunter</firstName>
      <lastName>Engelmann</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Töpper</lastName>
    </author>
    <author>
      <firstName>Klaus J.</firstName>
      <lastName>Riepe</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>6023</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2954</pageFirst>
    <pageLast>2961</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>54</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-03-01</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs</title>
    <parentTitle language="eng">IEEE transactions on microwave theory and techniques</parentTitle>
    <identifier type="issn">0018-9480</identifier>
    <enrichment key="UBICOIdent">006916</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Rudolph</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>O.</firstName>
      <lastName>Llopis</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="03045">Ulrich-Rohde-Stiftungsprofessur für Hochfrequenz- und Mikrowellentechnik</collection>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="1121">Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10406</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>897</pageFirst>
    <pageLast>900</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>London</publisherName>
    <publisherPlace>Horizon House Publ.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low phase-noise GaAs-HBT monolithic W-band oscillator</title>
    <parentTitle language="eng">34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October</parentTitle>
    <identifier type="isbn">1-58053-992-0</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10410</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>4</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Microwave Engineering Europe</publisherName>
    <publisherPlace>London</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators</title>
    <abstract language="eng">Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed.</abstract>
    <parentTitle language="eng">31st European Microwave Conference, 2001, 24 - 26 Sept. 2001</parentTitle>
    <identifier type="doi">10.1109/EUMA.2001.339168</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10416</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>839</pageFirst>
    <pageLast>842</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">38 GHz push-push GaAs-HBT MMIC oscillator</title>
    <abstract language="eng">Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.</abstract>
    <parentTitle language="eng">2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention &amp; Trade Center, Seattle, Washington, vol. 2</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2002.1011761</identifier>
    <identifier type="isbn">0-7803-7239-5</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Holger</firstName>
      <lastName>Kuhnert</lastName>
    </author>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10417</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>903</pageFirst>
    <pageLast>906</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz</title>
    <abstract language="eng">Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.</abstract>
    <parentTitle language="eng">2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2003.1212515</identifier>
    <identifier type="isbn">0-7803-7695-1</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Joachim</firstName>
      <lastName>Würfl</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10418</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1341</pageFirst>
    <pageLast>1344</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Service Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimizing MMIC reflection-type oscillators</title>
    <abstract language="eng">In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated.</abstract>
    <parentTitle language="eng">2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2004.1338816</identifier>
    <identifier type="isbn">0-7803-8331-1</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10421</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE Operations Center</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low phase noise X-band push-push oscillator with frequency divider</title>
    <abstract language="eng">A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4%.</abstract>
    <parentTitle language="eng">2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA</parentTitle>
    <identifier type="doi">10.1109/MWSYM.2005.1516986</identifier>
    <identifier type="isbn">0-7803-8845-3</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <author>
      <firstName>Chafik</firstName>
      <lastName>Meliani</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
  <doc>
    <id>10423</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2725</pageFirst>
    <pageLast>2731</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>52</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-03-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A new design approach for low phase-noise reflection-type MMIC oscillators</title>
    <abstract language="eng">In this paper, optimization of the loaded quality factor Q&lt;sub&gt;L&lt;/sub&gt; for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded Q&lt;sub&gt;L&lt;/sub&gt; values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range.</abstract>
    <parentTitle language="eng">IEEE transactions on microwave theory and techniques</parentTitle>
    <identifier type="doi">10.1109/TMTT.2004.837319</identifier>
    <identifier type="issn">0018-9480</identifier>
    <enrichment key="BTU">nicht an der BTU erstellt / not created at BTU</enrichment>
    <author>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </author>
    <submitter>
      <firstName>Friedrich</firstName>
      <lastName>Lenk</lastName>
    </submitter>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Schott</lastName>
    </author>
    <author>
      <firstName>Jochen</firstName>
      <lastName>Hilsenbeck</lastName>
    </author>
    <author>
      <firstName>Wolfgang</firstName>
      <lastName>Heinrich</lastName>
    </author>
    <collection role="old_institute" number="05031">Prof. Nachrichtentechnik</collection>
    <collection role="institutes" number="3182">FG Nachrichtentechnik</collection>
  </doc>
</export-example>
