<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>5035</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>G193</pageFirst>
    <pageLast>G201</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>157</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxid Thin Films</title>
    <parentTitle language="eng">Journal of The Electrochemical Society</parentTitle>
    <enrichment key="UBICOIdent">005864</enrichment>
    <author>
      <firstName>Aile</firstName>
      <lastName>Tamm</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Marianna</firstName>
      <lastName>Kemell</lastName>
    </author>
    <author>
      <firstName>Jekaterina</firstName>
      <lastName>Kozlova</lastName>
    </author>
    <author>
      <firstName>Timo</firstName>
      <lastName>Sajavaara</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Kaupo</firstName>
      <lastName>Kukli</lastName>
    </author>
    <author>
      <firstName>V.</firstName>
      <lastName>Sammelselg</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Ritala</lastName>
    </author>
    <author>
      <firstName>Markku</firstName>
      <lastName>Leskelä</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic Layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Erbium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Zirconium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Oxid-Doped</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5036</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2025</pageFirst>
    <pageLast>2032</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12-13</issue>
    <volume>312</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1´-methyl-ruthenocene</title>
    <parentTitle language="eng">Journal of Crystal Growth</parentTitle>
    <identifier type="doi">10.1016/j.jcrysgro.2010.03.033</identifier>
    <identifier type="issn">0022-0248</identifier>
    <enrichment key="UBICOIdent">005865</enrichment>
    <author>
      <firstName>Kaupo</firstName>
      <lastName>Kukli</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jaan</firstName>
      <lastName>Aarik</lastName>
    </author>
    <author>
      <firstName>Aleks</firstName>
      <lastName>Aidla</lastName>
    </author>
    <author>
      <firstName>Teet</firstName>
      <lastName>Uustare</lastName>
    </author>
    <author>
      <firstName>Indrek</firstName>
      <lastName>Jõgi</lastName>
    </author>
    <author>
      <firstName>Jun</firstName>
      <lastName>Lu</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Marianna</firstName>
      <lastName>Kemell</lastName>
    </author>
    <author>
      <firstName>Alma- Asta</firstName>
      <lastName>Kiisler</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Ritala</lastName>
    </author>
    <author>
      <firstName>Markku</firstName>
      <lastName>Leskelä</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>morphology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6338</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3159</pageFirst>
    <pageLast>3168</pageLast>
    <pageNumber/>
    <edition/>
    <issue>13</issue>
    <volume>23</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium</title>
    <parentTitle language="eng">Chemistry of Materials</parentTitle>
    <identifier type="issn">0897-4756</identifier>
    <enrichment key="UBICOIdent">007283</enrichment>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Kaupo</firstName>
      <lastName>Kukli</lastName>
    </author>
    <author>
      <firstName>Marcel</firstName>
      <lastName>Michling</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Ritala</lastName>
    </author>
    <author>
      <firstName>Markku</firstName>
      <lastName>Leskelä</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>9127</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>N45</pageFirst>
    <pageLast>N54</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-07-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors</title>
    <abstract language="eng">Iron oxide and magnesium-doped iron oxide films were grown by atomic layer deposition in the temperature range of 350–500 ◦C from ferrocene, (dimethylaminomethyl)ferrocene, magnesiumβ-diketonate, and ozone. Phase composition of the films depended on the deposition temperature, as magnetite and/or maghemite tended to form instead of hematite upon lowering the temperature. Iron oxide layers were also mixed with magnesium oxide by alternate deposition of MgO and Fe2O3 which also favored the formation of magnetite or maghemite structure prior to hematite. Scanning electron microscopy implied the smoothening of the films after doping with magnesium oxide. Magnetometry was used to study the effects of temperature and doping levels on the magnetic properties of&#13;
the films.</abstract>
    <parentTitle language="eng">ECS Journal of Solid State Science and Technology</parentTitle>
    <identifier type="doi">10.1149/2.004303jss</identifier>
    <identifier type="issn">2162-8769</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Kaupo</firstName>
      <lastName>Kukli</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Mukesh Chandra</firstName>
      <lastName>Dimri</lastName>
    </author>
    <author>
      <firstName>Aile</firstName>
      <lastName>Tamm</lastName>
    </author>
    <author>
      <firstName>Marianna</firstName>
      <lastName>Kemell</lastName>
    </author>
    <author>
      <firstName>Tanel</firstName>
      <lastName>Käämbre</lastName>
    </author>
    <author>
      <firstName>Marko</firstName>
      <lastName>Vehkamäki</lastName>
    </author>
    <author>
      <firstName>Manjunath</firstName>
      <lastName>Puttaswamy</lastName>
    </author>
    <author>
      <firstName>Raivo</firstName>
      <lastName>Stern</lastName>
    </author>
    <author>
      <firstName>Ivar</firstName>
      <lastName>Kuusik</lastName>
    </author>
    <author>
      <firstName>Arvo</firstName>
      <lastName>Kikas</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Ritala</lastName>
    </author>
    <author>
      <firstName>Markku</firstName>
      <lastName>Leskelä</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>iron oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>iron magnesium oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GIXRD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray absorption spectroscopy (XAS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning electron microscopy (SEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>magnetization</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>9386</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>D158</pageFirst>
    <pageLast>D165</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>158</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-09-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen</title>
    <abstract language="eng">Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO(2), ZrO(2), and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO(2) promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO(2) with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher.</abstract>
    <parentTitle language="eng">Journal of the Electrochemical Society</parentTitle>
    <identifier type="doi">10.1149/1.3533387</identifier>
    <identifier type="issn">0013-4651</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Kaupo</firstName>
      <lastName>Kukli</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Marianna</firstName>
      <lastName>Kemell</lastName>
    </author>
    <author>
      <firstName>Esa</firstName>
      <lastName>Puukilainen</lastName>
    </author>
    <author>
      <firstName>Jaan</firstName>
      <lastName>Aarik</lastName>
    </author>
    <author>
      <firstName>Aleks</firstName>
      <lastName>Aidla</lastName>
    </author>
    <author>
      <firstName>Timo</firstName>
      <lastName>Sajavaara</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Laitinen</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Jonas</firstName>
      <lastName>Sundqvist</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Ritala</lastName>
    </author>
    <author>
      <firstName>Markku</firstName>
      <lastName>Leskelä</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ruthenium</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>12122</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3582</pageFirst>
    <pageLast>3587</pageLast>
    <pageNumber/>
    <edition/>
    <issue>20</issue>
    <volume>5</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2014-10-17</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Modification of Hematite Electronic Properties with Trimethyl Aluminum to Enhance the Efficiency of Photoelectrodes</title>
    <abstract language="eng">The electronic properties of hematite were investigated by means of synchrotron radiation photoemission (SR-PES) and X-ray absorption spectroscopy (XAS). Hematite samples were exposed to trimethyl aluminum (TMA) pulses, a widely used Al-precursor for the atomic layer deposition (ALD) of Al2O3. SR-PES and XAS showed that the electronic properties of hematite were modified by the interaction with TMA. In particular, the hybridization of O 2p states with Fe 3d and Fe 4s4p changed upon TMA pulses due to electron inclusion as polarons. The change of hybridization correlates with an enhancement of the photocurrent density due to water oxidation for the hematite electrodes. Such an enhancement has been associated with an improvement in charge carrier transport. Our findings open new perspectives for the understanding and utilization of electrode modifications by very thin ALD films and show that the interactions between metal precursors and substrates seem to be important factors in defining their electronic and photoelectrocatalytic properties.</abstract>
    <parentTitle language="eng">The Journal of Physical Chemistry Letters</parentTitle>
    <identifier type="doi">10.1021/jz501751w</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Dejan</firstName>
      <lastName>Cibrev</lastName>
    </author>
    <author>
      <firstName>Kaupo</firstName>
      <lastName>Kukli</lastName>
    </author>
    <author>
      <firstName>Aile</firstName>
      <lastName>Tamm</lastName>
    </author>
    <author>
      <firstName>Mikko</firstName>
      <lastName>Ritala</lastName>
    </author>
    <author>
      <firstName>Teresa</firstName>
      <lastName>Lana-Villarreal</lastName>
    </author>
    <author>
      <firstName>Roberto</firstName>
      <lastName>Gómez</lastName>
    </author>
    <author>
      <firstName>Markku</firstName>
      <lastName>Leskelä</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hematite</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic Layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photoelectrode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electro-catalysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TMA</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>efficiency enhancement</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
