<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>9356</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>043506</pageFirst>
    <pageLast>043511</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>112</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Bertaud</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Thiess</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Gloskovski</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Drube</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>9361</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>21</pageFirst>
    <pageLast>26</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>50</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays</title>
    <parentTitle language="eng">ECS transactions</parentTitle>
    <identifier type="issn">1938-6737</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Bertaud</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Damian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <author>
      <firstName>Dirk</firstName>
      <lastName>Wolansky</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Tillack</lastName>
    </author>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Schoof</lastName>
    </author>
    <author>
      <firstName>R.</firstName>
      <lastName>Korolevych</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Thiess</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schroeder</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>9332</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>233509</pageFirst>
    <pageLast>233514</pageLast>
    <pageNumber/>
    <edition/>
    <issue>23</issue>
    <volume>100</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-08-29</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures</title>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="issn">0003-6951</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Borrmann</lastName>
    </submitter>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Bertaud</lastName>
    </author>
    <author>
      <firstName>Damian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Thiess</lastName>
    </author>
    <author>
      <firstName>Markus Andreas</firstName>
      <lastName>Schubert</lastName>
    </author>
    <author>
      <firstName>Mindaugas</firstName>
      <lastName>Lukosius</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Drube</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Walczyk</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <collection role="old_institute" number="01050">LS Halbleitermaterialien</collection>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
  <doc>
    <id>14096</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>3</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>BTU Cottbus-Senftenberg</publisherName>
    <publisherPlace>Senftenberg</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Charakterisierung von TiO2-ALD-Schichten und deren Nutzung für die Passivierung von Si-Photokathoden</title>
    <abstract language="deu">Wir berichten zunächst über den Einfluss der Methode der Atomlagenabscheidung auf die TiO2-Schichteigenschaften. Insbesondere wird der Zusammenhang zwischen Ti3+- sowie Interbandzuständen mit elektrischen Kennlinien und deren Einfluss auf funktionale Schichteigenschaften diskutiert. Anschließend werden Mikrostrukturierung, Grenzflächen-Engineering und konforme Abscheidung einer TiO2-ALD-Schutzschicht effektiv zur Performance-Steigerung von p-Si-Photokathoden angewendet.</abstract>
    <parentTitle language="deu">Tagungsband Photovoltaik-Meeting: Anwendungen-Qualität-Perspektiven, Senftenberg, 15.04.2015</parentTitle>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>B. K.</firstName>
      <lastName>Glück</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <editor>
      <firstName>S.</firstName>
      <lastName>Schmidt</lastName>
    </editor>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <editor>
      <firstName>E.</firstName>
      <lastName>Stein</lastName>
    </editor>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <editor>
      <firstName>Jörg-Uwe</firstName>
      <lastName>Raschke</lastName>
    </editor>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <editor>
      <firstName>H.</firstName>
      <lastName>Richter</lastName>
    </editor>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Arens</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>TiO2</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Korrosion</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Atomlagenabscheidung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Silizium</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Photokathoden</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Linear Scan Voltametry</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Photoelektronenspektroskopie</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>14747</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>01A127-1</pageFirst>
    <pageLast>01A127-9</pageLast>
    <pageNumber/>
    <edition/>
    <issue>34</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-11-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study</title>
    <abstract language="eng">The process parameters’ impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiOxNy) films was studied. Titanium(IV)isopropoxide in combination with NH3 plasma and tetrakis(dimethylamino) titanium by applying N2 plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiOxNy&#13;
films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant&#13;
combination.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="doi">10.1116/1.4936227</identifier>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowińska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Gruska</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>plasma enhanced atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>current-voltage</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance-voltage</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>16476</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>42</pageFirst>
    <pageLast>47</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>381</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-06-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of nitrogen species in titanium oxynitride ALD films</title>
    <abstract language="eng">Titanium oxynitride films  are prepared by plasma enhanced atomic layer deposition method using two  different precursors and  nitrogen sources.  Synchrotron radiation-based  X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are  used to characterize the  nitrogen species incorporated&#13;
within these films depending  on the deposition parameters. &#13;
It is found that nitrogen  atoms in these films are differently bonded. In  particular, it can be  distinguished between Ti-ON  and Ti-N bonding configurations and molecular  nitrogen species caused  by  precursor fragments.</abstract>
    <parentTitle language="eng">Applied Surface Science</parentTitle>
    <identifier type="doi">10.1016/j.apsusc.2016.02.096</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Simone</firstName>
      <lastName>Brizzi</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Irina</firstName>
      <lastName>Kärkkänen</lastName>
    </author>
    <author>
      <firstName>Jessica</firstName>
      <lastName>Schneidewind</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Hassan</firstName>
      <lastName>Gargouri</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium  oxynitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray absorption spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ALD process parameters</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17118</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 206</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">XPS study of the ALD growth of Al₂O₃ on the CH₃NH₃PbI₃</title>
    <abstract language="eng">Organic-inorganic lead halide perovskites have emerged as very attractive absorber materials for the fabrication of low cost and high efficiency solar cells, but a delicate nature of these films is one of the main challenges for a successful commercialization. Typically, when exposed to air or moisture, perovskite films degrade within a couple of hours or days. Moreover, the methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite cannot sustain a prolonged annealing at temperatures around 85∘C. In this work, we are investigating stability (upon air and thermal exposure) of a CH₃NH₃PbI₃ perovskite film coated with a thin layer of Al₂O₃ deposited by atomic layer deposition&#13;
(ALD). In particular, the chemical and electronic changes occurred at the Al₂O₃/CH₃NH₃PbI₃ interface during the first 50 ALD cycles were monitored ex-situ by high-resolution and surface-sensitive synchrotron-based X-ray photoelectron spectroscopy (SR-XPS). The advantage of the ALD as a deposition method is that it can produce extremely dense layers with a very precise thickness control at room temperature. Detailed SR-XPS data analysis and a stability test of the perovskite film with alumina will be presented.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2016/conference/regensburg/part/cpp/session/31/contribution/6?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 51</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Wojciechowski</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al₂O₃</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17119</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 150</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Spectroscopic investigation of the nitrogen role in organic-inorganic perovskite films</title>
    <abstract language="eng">Over the past few years, a wide range of device architectures employing organic-inorganic metal halide perovskite absorbers has been reported, with efficiencies exceeding 20%. Despite the tremendous progress, a number of key issues must be resolved before the wide-spread com-&#13;
mercialization will be possible. Some of the primary challenges include lead toxicity, long-term stability, and fast degradation upon exposure to humid atmosphere. Recent computational and experimental studies suggest that hybrid metal-halide perovskites act as an ionic-electronic conductor. The study of vacancy-mediated migration of I−, Pb2+ and CH3NH3− ions and their relative activation energies suggests that migration of halide vacancies, to and from the interfaces in the solar cell during its operation, is the main conduction mechanism. In this work, we are presenting high resolution synchrotron-based spectroscopic study, which indicates that the contribution of nitrogen into the conduction mechanism of methyl ammonium lead iodide-based (CH3NH3PbI3) perovskite films should not be neglected. The N1s core level and resonant X-ray photoelectron spectroscopy at the N1s-egde of the CH3NH3PbI3 films are discussed in detail.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2016/conference/regensburg/part/cpp/session/11/contribution/7?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 51</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Wojciechowski</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite solar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nitrogen</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17109</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 33</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1-2</issue>
    <volume>15</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomic layer deposition of Al2O3 on CH3NH3PbI3 for enhancement of perovskite solar cells stability</title>
    <parentTitle language="eng">Synchrotron Radiation in Natural Science : Bulletin of the Polish Synchrotron Radiation Society</parentTitle>
    <identifier type="issn">1644-7190</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Wojciechowski</lastName>
    </author>
    <author>
      <firstName>Zied</firstName>
      <lastName>Rouissi</lastName>
    </author>
    <author>
      <firstName>Henry J.</firstName>
      <lastName>Snaith</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>perovskite soloar cells</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic foce microscopy (AFM)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>18958</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>Art. 31639</pageFirst>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>6</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Understanding the growth mechanism of graphene on Ge/Si(001) surfaces</title>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="doi">10.1038/srep31639</identifier>
    <identifier type="issn">2045-2322</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Gunther</firstName>
      <lastName>Lippert</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Avila</lastName>
    </author>
    <author>
      <firstName>Jens</firstName>
      <lastName>Baringhaus</lastName>
    </author>
    <author>
      <firstName>I.</firstName>
      <lastName>Colambo</lastName>
    </author>
    <author>
      <firstName>Yu. S.</firstName>
      <lastName>Dedkov</lastName>
    </author>
    <author>
      <firstName>Felix</firstName>
      <lastName>Herziger</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Maultzsch</lastName>
    </author>
    <author>
      <firstName>T.</firstName>
      <lastName>Schaffus</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Schröder</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Sowinska</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Tegenkamp</lastName>
    </author>
    <author>
      <firstName>D.</firstName>
      <lastName>Vignaud</lastName>
    </author>
    <author>
      <firstName>Maria Carmen</firstName>
      <lastName>Asensio</lastName>
    </author>
    <collection role="institutes" number="1521">FG Halbleitermaterialien</collection>
  </doc>
</export-example>
