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  <doc>
    <id>27164</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>2021</volume>
    <type>image</type>
    <publisherName>Deutsche Physikalische Gesellschaft e.V.</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
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    <contributingCorporation/>
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    <completedDate>2021-03-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma</title>
    <abstract language="eng">Indium oxide thin films were deposited on Si (100) by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium (TMIn) and oxygen plasma (O2) in a low-temperature range of 80 to 200 °C. The In2O3 layers were characterized by in-situ spectroscopic ellipsometry (SE), ex-situ X-ray photoelectron spectroscopy (XPS) and electrical measurements. The SE data show a growth rate of 0.56 Å/cycle within the ALD window (100 to 150 °C) with a thickness inhomogeneity of ≤1.2%. In addition, the highest refractive index is 2.07 (at 632.8 nm) for the layer grown at 150 °C, and the films exhibit indirect and direct band gaps of 2.8±0.1 eV and 3.3±0.2 eV, respectively. XPS characterization indicates no carbon incorporation and a temperature-dependent off-stoichiometry of the layers. The chemical analysis of the In 3d and O 1s core levels confirms the formation of In-O bonds and suggests the additional presence of hydroxyl groups and defects. With increasing temperature, the contribution of OH groups and defects decreases whereas that of In-O bonds increases. Notably, higher growth temperatures result in an indium rich phase within the layers.</abstract>
    <parentTitle language="eng">Verhandlungen der DPG - SurfaceScience21</parentTitle>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2021/conference/surfacescience/part/o/session/74/contribution/8</identifier>
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    <enrichment key="Artikelnummer">O 74.8</enrichment>
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    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Carlos</firstName>
      <lastName>Morales</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Paul</firstName>
      <lastName>Plate</lastName>
    </author>
    <author>
      <firstName>Robert</firstName>
      <lastName>Meyer</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Indium oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasma enhanced atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Spectroscopic ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>27843</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>39</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-10-28</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma</title>
    <abstract language="eng">Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature range of 80–200 °C. The optical properties, chemical composition, crystallographic structure, and electrical characteristics of these layers were investigated by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), as well as current-voltage and capacitance-voltage measurements. The SE results yielded a nearly constant growth rate of 0.56 Å per cycle and a thickness inhomogeneity of ≤1.2% across 4-in. substrates in the temperature range of 100–150 °C. The refractive index (at 632.8 nm) was found to be 2.07 for the films deposited at 150 °C. The PEALD-InxOy layers exhibit a direct (3.3 ± 0.2 eV) and an indirect (2.8 ± 0.1 eV) bandgap with an uptrend for both with increasing substrate temperature. Based on XPS characterization, all InxOy samples are free of carbon impurities and show a temperature-dependent off-stoichiometry indicating oxygen vacancies. XRD diffraction patterns demonstrate an onset of crystallization at 150 °C. Consistent with the optical, XPS, and XRD data, the films deposited at ≥150 °C possess higher electrical conductivity. Our findings prove that a low-temperature PEALD process of InxOy is feasible and promising for a high-quality thin-film deposition without chemical impurities on thermally fragile substrates.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology A</parentTitle>
    <identifier type="issn">0734-2101</identifier>
    <identifier type="issn">1520-8559</identifier>
    <identifier type="doi">10.1116/6.0001375</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">062406</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Carlos</firstName>
      <lastName>Morales</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Paul</firstName>
      <lastName>Plate</lastName>
    </author>
    <author>
      <firstName>Robert</firstName>
      <lastName>Meyer</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Indium oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasma-enhanced atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrical properties</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>29021</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>9291</pageFirst>
    <pageLast>9301</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>51</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-06-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation</title>
    <abstract language="eng">An Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ. The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by in situ X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of Al2O3 are found to be 1.1 eV below and 2.3 eV above those of ZnO, resulting in a type-I staggered heterojunction. An apparent reduction of ZnO to elemental Zn in the interface region was detected in the Zn 2p core level and Zn L3MM Auger spectra. This suggests an interface formation different from previous models. The reduction of ZnO to Zn in the interface region accompanied by the creation of oxygen vacancies in ZnO results in an upward band bending at the interface. Therefore, this study suggests that interfacial properties such as the band bending as well as the valence and conduction band offsets should be in situ controllable to a certain extent by careful selection of the process parameters.</abstract>
    <parentTitle language="eng">Dalton Transactions</parentTitle>
    <identifier type="issn">1477-9234</identifier>
    <identifier type="issn">1477-9226</identifier>
    <identifier type="doi">10.1039/D1DT04008A</identifier>
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    <enrichment key="opus.source">publish</enrichment>
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    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Ali</firstName>
      <lastName>Mahmoodinezhad</lastName>
    </author>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Carlos</firstName>
      <lastName>Morales</lastName>
    </author>
    <author>
      <firstName>Franziska</firstName>
      <lastName>Naumann</lastName>
    </author>
    <author>
      <firstName>Paul</firstName>
      <lastName>Plate</lastName>
    </author>
    <author>
      <firstName>Marvin Hartwig</firstName>
      <lastName>Zöllner</lastName>
    </author>
    <author>
      <firstName>Florian</firstName>
      <lastName>Bärwolf</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Stolarek</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Jan Ingo</firstName>
      <lastName>Flege</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ALD heterojunction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>band alignement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ZnO</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Al2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interface properties</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>33798</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>12</pageNumber>
    <edition/>
    <issue/>
    <volume>417</volume>
    <type>articler</type>
    <publisherName>Elsevier BV</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2024-07-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low temperature hydrogen sensor with high sensitivity based on CeOx thin film</title>
    <abstract language="eng">In this work, a 500 nm-thick cerium oxide thin film was prepared by electron beam evaporation. It was found that the deposition of 7 nm thick Pd catalyst was required for obtaining a sensor response to hydrogen. The Pd/CeOx sensing structure has a high response of 5000 towards 25 ppm H2 at a working temperature of 200 °C and exhibits a sensor response of 1.3 at temperatures near ambient. Furthermore, the sensing structure exhibited excellent response/recovery kinetics. The results confirm that the CeOx-based materials are a promising material for the fabrication of room-temperature hydrogen sensors.</abstract>
    <parentTitle language="eng">Sensors and Actuators B: Chemical</parentTitle>
    <identifier type="doi">10.1016/j.snb.2024.136148</identifier>
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    <author>
      <firstName>Paulina</firstName>
      <lastName>Kapuścik</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
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      <firstName>Damian</firstName>
      <lastName>Wojcieszak</lastName>
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      <firstName>Patrycja</firstName>
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      <lastName>Morales</lastName>
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      <firstName>Jan Ingo</firstName>
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      <value>Cerium oxide</value>
    </subject>
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      <value>Thin film</value>
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      <value>Hydrogen sensing</value>
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      <value>Low operating temperature</value>
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    <title language="eng">Bottom-up design of a supercycle recipe for atomic layer deposition of tunable Indium Gallium Zinc Oxide thin films</title>
    <abstract language="eng">We present a successful bottom-up approach to design a generic plasma-enhanced atomic layer deposition (PEALD) supercycle recipe to grow high-quality indium gallium zinc oxide (IGZO) thin films with tunable composition at a relatively low temperature of 150 °C. In situ real-time ellipsometric characterization in combination with ex situ complementary techniques has been used to optimize the deposition process and quality of the films by identifying and solving growth challenges such as degree of oxidation, nucleation delays, or elemental composition. The developed supercycle approach enables facile control of the target composition by adapting the subcycle ratios within the supercycle process. Compared to other low-temperature deposition techniques resulting in amorphous films, our PEALD–IGZO process at 150 °C results in nearly amorphous, nanocrystalline films. The preparation of IGZO films at low temperature by a supercycle PEALD approach allows controlling the thickness, composition, and electrical properties while preventing thermally induced segregation.</abstract>
    <parentTitle language="eng">ACS Applied Electronic Materials</parentTitle>
    <identifier type="doi">10.1021/acsaelm.4c00730</identifier>
    <identifier type="issn">2637-6113</identifier>
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      <value>IGZO</value>
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      <value>XPS depth profiling</value>
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      <value>current density</value>
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    <title language="eng">A super-cycle approach to atomic layer deposition of indium-gallium-zinc oxide at low temperature</title>
    <abstract language="eng">The continuing development of multifunctional devices needs novel multicomponent oxide layers, demanding a high control of both composition and thickness during their preparation. To this end, single metal oxides exhibiting high structural quality and conformity have successfully been grown by atomic layer deposition (ALD). However, the deposition of more complex compounds with specific optical and electrical properties is still challenging. In this work, we follow a bottom-up approach to design an ALD super-cycle to grow mixed indium-gallium-zinc oxide (IGZO) films with a controllable composition. For the formation of the individual indium, gallium, and zinc oxides, we found the use of plasma-enhanced ALD (PEALD) at 150 °C to be favorable when using the organometallic precursors trimethylindium, trimethylgallium, and diethylzinc together with oxygen plasma. The PEALD approach of IGZO films can particularly overcome a nucleation delay within the ZnO sub-cycle known from thermal ALD, achieving a higher growth per cycle and improving the quality and composition homogeneity of the films as shown by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy.</abstract>
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      <firstName>Carlos</firstName>
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      <firstName>Małgorzata</firstName>
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      <firstName>Jan Ingo</firstName>
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      <value>Indium gallium zinc oxide</value>
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      <value>Transparent conducting oxide</value>
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      <value>Plasma-enhanced atomic layer deposition</value>
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      <value>nucleation delay</value>
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    <title language="eng">In situ X‐ray photoelectron spectroscopy study of atomic layer deposited cerium oxide on SiO₂ : substrate influence on the reaction mechanism during the early stages of growth</title>
    <abstract language="eng">Thermal atomic layer deposition (ALD) of cerium oxide using commercial Ce(thd)4 precursor and O3 on SiO2 substrates is studied employing in‐situ X‐ray photoelectron spectroscopy (XPS). The system presents a complex growth behavior determined by the change in the reaction mechanism when the precursor interacts with the substrate or the cerium oxide surface. During the first growth stage, non‐ALD side reactions promoted by the substrate affect the growth per cycle, the amount of carbon residue on the surface, and the oxidation degree of cerium oxide. On the contrary, the second growth stage is characterized by a constant growth per cycle in good agreement with the literature, low carbon residues, and almost fully oxidized cerium oxide films. This distinction between two growth regimes is not unique to the CeOx/SiO2 system but can be generalized to other metal oxide substrates. Furthermore, the film growth deviates from the ideal layer‐by‐layer mode, forming micrometric inhomogeneous and defective flakes that eventually coalesce for deposit thicknesses above 10 nm. The ALD‐cerium oxide films present less order and a higher density of defects than films grown by physical vapor deposition techniques, likely affecting their reactivity in oxidizing and reducing conditions.</abstract>
    <parentTitle language="eng">Advanced materials interfaces</parentTitle>
    <identifier type="doi">10.1002/admi.202400537</identifier>
    <identifier type="issn">2196-7350</identifier>
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