<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>813</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>171</pageFirst>
    <pageLast>173</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Bessy</publisherName>
    <publisherPlace>Berlin</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The Pr2O3/Si(001) interface: a mixed Si-Proxide</title>
    <parentTitle language="deu">BESSY annual report 2001</parentTitle>
    <enrichment key="UBICOIdent">001123</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1368</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1219</pageFirst>
    <pageLast>1231</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>45</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Formation of atomically smooth, ultrathin oxides on Si(113)</title>
    <parentTitle language="deu">Solid state electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <enrichment key="UBICOIdent">001702</enrichment>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>S.</firstName>
      <lastName>Hinrich</lastName>
    </author>
    <collection role="old_institute" number="01044">LS Systeme</collection>
    <collection role="institutes" number="1222">FG Systeme</collection>
  </doc>
  <doc>
    <id>1973</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1607</pageFirst>
    <pageLast>1611</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>47</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The Pr2O3 / Si (001) interface studied by synchrotron radiation photo-electron spectroscopy</title>
    <abstract language="eng">Pr2O3 is currently under consideration as a potential replacement for SiO2 as the gate-dielectric material for sub-0.1micro m complementary metal-oxide-semiconductor (CMOS) technology. We studied the Pr2O3/Si(0 0 1) interface by a non-destructive depth profiling using synchrotron radiation photoelectron spectroscopy. Our data suggests that there is no silicide formation at the interface. Based on reported results, a chemical reactive interface exists, consisting of a mixed Si-Pr oxide such as (Pr2O3)x(SiO2)1?x, i.e. as a silicate phase with variable silicon content. This pseudo-binary alloy at the interface offers large flexibility toward successful integration of Pr2O3 into future CMOS technologies.</abstract>
    <parentTitle language="eng">Solid State Electronics</parentTitle>
    <identifier type="issn">0038-1101</identifier>
    <enrichment key="UBICOIdent">002394</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k dielectric material</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pr2O3</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicate</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1978</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>153</pageFirst>
    <pageLast>160</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>16</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stability and electronic properties of silicates in the system SiO2 - Pr2O3 - Si(001)</title>
    <abstract language="eng">Pr2O3 is one of the most promising hetero-oxides that are the candidates of choice to replace SiO2 as the gate dielectric material for sub-0.1 micrometer CMOS technology. In order to enable process integration, however, hetero-oxides require substantial characterization. In particular, the basic interaction mechanisms at the interface to the silicon substrate are the key issues. A solid knowledge of these mechanisms is required to address reliability arguments. The challenges in material science are to understand the chemical bonding of the hetero-oxides and Si on a microscopic scale. We report on the specific variations in the electronic structure which are evident in the valence band features around resonant excitation at the Pr 4d threshold. We also determine the valance band discontinuities at the Pr2O3/Si(001) interface and follow the changes in the surface potentials to develop a band scheme, a prerequisite to understanding the properties of charge transport across that interface.</abstract>
    <parentTitle language="eng">Journal of Physics: Condensed Matter</parentTitle>
    <identifier type="issn">1361-648X</identifier>
    <enrichment key="UBICOIdent">002400</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1982</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>88</pageFirst>
    <pageLast>90</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>85</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Silicate Layer Formation at the Pr2O3 / Si(001) Interfaces</title>
    <abstract language="eng">We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1%D710-8  mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="issn">1077-3118</identifier>
    <enrichment key="UBICOIdent">002404</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1984</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>215</pageFirst>
    <pageLast>220</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4-6</issue>
    <volume>7</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations</title>
    <abstract language="eng">We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.</abstract>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="issn">1369-8001</identifier>
    <enrichment key="UBICOIdent">002406</enrichment>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Formanek</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>High-k dielectrics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface reaction</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1998</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>D7.10.</pageNumber>
    <edition/>
    <issue/>
    <volume>811</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2</title>
    <parentTitle language="eng">MRS Proceedings</parentTitle>
    <identifier type="issn">1946-4274</identifier>
    <enrichment key="UBICOIdent">002484</enrichment>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Jarek Marek</firstName>
      <lastName>Dabrowski</lastName>
    </author>
    <author>
      <firstName>Christian</firstName>
      <lastName>Wenger</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Roland</firstName>
      <lastName>Sorge</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Formanek</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1999</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>D6.7</pageNumber>
    <edition/>
    <issue/>
    <volume>811</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Pr4f occupancy and VB/CB band offsets of Pr2O3 at the interface to Si(001) and SiC(0001) surfaces</title>
    <parentTitle language="eng">MRS Proceedings</parentTitle>
    <identifier type="issn">1946-4274</identifier>
    <enrichment key="UBICOIdent">002485</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1993</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>408</pageFirst>
    <pageLast>409</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Bessy</publisherName>
    <publisherPlace>Berlin</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High reactivity of Pr on oxide covered 4H-SiC</title>
    <parentTitle language="eng">Bessy annual report 2003</parentTitle>
    <enrichment key="UBICOIdent">002479</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2615</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>75</pageFirst>
    <pageLast>76</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>AIP, American Inst. of Physics</publisherName>
    <publisherPlace>New York, NY</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Pr-silicate formation on SiO2 covered 3C-SiC(111)</title>
    <parentTitle language="eng">Physics of semiconductors, 27th International Conference on the Physics of Semiconductors</parentTitle>
    <identifier type="isbn">0-7354-0257-4</identifier>
    <enrichment key="UBICOIdent">003142</enrichment>
    <enrichment key="UBICOseries">AIP conference proceedings ; 772</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Hans-Joachim</firstName>
      <lastName>Müssig</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
