<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>5029</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field effect transistors on graphitized polymer surfaces</title>
    <enrichment key="UBICOIdent">005858</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi : B 248(2011)2, S. 299-308,  0370-1972</enrichment>
    <author>
      <firstName>Yuri</firstName>
      <lastName>Koval</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Friedrich</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>polymer</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5064</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface screening and imprint in pol(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors</title>
    <enrichment key="UBICOIdent">005905</enrichment>
    <enrichment key="UBICOquelle">Journal of Applied Physics 105(2009)5, 054110, 1089-7550</enrichment>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Yuri</firstName>
      <lastName>Koval</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interface</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>screening</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transistors</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5069</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using Poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications</title>
    <enrichment key="UBICOIdent">005910</enrichment>
    <enrichment key="UBICOquelle">Journal of Vacuum Science and Technology B 27(2009)1, S. 504-507</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
    </author>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Yuri</firstName>
      <lastName>Koval</lastName>
    </author>
    <author>
      <firstName>P.</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metal</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>frerroelectric</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>insulator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17952</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 932</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Dechema e.V.</publisherName>
    <publisherPlace>Frankfurt</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-01-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-situ analysis of moving reaction fronts for the bistable CO oxidation reaction on noble metal catalyst</title>
    <abstract language="eng">Experimental data on the reaction kinetics of catalytic processes are prerequisite for modeling of such reactions and their output. We investigate the CO oxidation on&#13;
some noble metal catalysts, like Iridium(111) and Palladium(111) which is a bistable surface reaction. In a specific range of CO content in the feed gas islands of one or the other adsorbate nucleate and grow, which is recorded with photo electron emission microscopy (PEEM). During these transients the coverage on the surface&#13;
changes from predominantly oxygen covered to predominantly CO covered resp. vice versa. But the resolution of PEEM and especially its unknown and nonlinear dependence of coverage of the two adsorbates (oxygen and CO) and image intensity make it impossible to extract the changes in coverage. On the other hand the reaction diffusion model based on the Langmuir-Hinshelwood-mechanism delivers&#13;
the coverage of oxygen and carbon monoxide. The shapeand wall velocity of those islands has been connected perfectly to each other [CPL 423 (2006) 39], but not the&#13;
absolute coverage and their variation during the reaction. Since the domain wall velocity is small on Iridium(111), this has opened the possibility for a detailed&#13;
analysis of the changing coverage inside this domain wallutilizing synchrotron radiation and photo electron spectroscopy at BESSY II. The coverage profile of&#13;
oxygen and CO inside a moving domain wall was measured for both cases using XPS spectra at O1s, C1s and the valence band during thereaction. Comparison with the reaction-diffusion-model and other catalytic surfaces, like Palladium(111) are done.</abstract>
    <parentTitle language="eng">Extended Abstracts Book of First International Conference on Materials for Energy</parentTitle>
    <identifier type="isbn">978-3-89746-117-8</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Wehner</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CO oxidation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ir</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pd</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photo electron emission microscopy (PEEM)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>806</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>BTU Cottbus, Eigenverlag</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Elektronik mit organischen Materialien</title>
    <abstract language="deu">Plastikelektronik, flexible Solarzellen, intelligente Kleidung, neuartige und maßgeschneiderte Transducer für die Gas-, Flüssigkeits- und Biosensorik, all dies sind Anwendungen, die ohne halbleitende Polymere nicht denkbar wären und die Bereiche erschließen, in denen zur Zeit eine regelrechte Goldgräberstimmung herrscht. Mit wichtigen Beiträgen im Grundlagen- und Anwendungsbereich nimmt die BTU Cottbus an dieser Entwicklung teil, u. a. auch durch eine Kooperation mit dem Institut für Mikrobiologie des Carl-Thiem-Klinikums Cottbus.In diesem Artikel werden die Voraussetzungen für die Konstruktion organischer Feldeffekt-Transistoren mit gassensitiver Gate-Elektrode vorgestellt. Untersuchungen zur elektronischen Struktur des organischen Halbleiters Poly(3-Hexylthiophen), die Anwendung dieses Materials als aktive Schicht in organischen Feldeffekt-Transitoren, die Gassensitivität von Polypyrrolelektroden auf Quarz-Mikrowaagen und die Mikrorstukturierung organischer Elektroden werden beschrieben.</abstract>
    <enrichment key="UBICOIdent">001116</enrichment>
    <enrichment key="UBICOquelle">Forum der Forschung, 6(2002)13, S. 117-121, 0947-6989</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>809</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>166</pageFirst>
    <pageLast>169</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>w.e.b. Universitätsverlag</publisherName>
    <publisherPlace>Dresden</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-06-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Low-cost-Plot-Technologie fur die Mikrostrukturierung von Gassensoren</title>
    <abstract language="deu">Bei der Herstellung von Mikrosensoren ist die Strukturierung von Elektroden oder elektrischen Zu-leitungen mit einem hohen Miniaturisierungsgrad ein entscheidender Punkt. Dazu müs-sen häufig teure Verfahren (Lithographie, Maskentechniken) herangezogen  werden.Dieser Beitrag beschreibt eine low-cost-Technologie zur Herstellung organischer Mikrostrukturen für elektronische und messtechnische Anwendungen im Bereich der Sensorik. Geplottete Strukturen mit Polypyrrol und Poly(3,4-Ethylen-Dioxy-Thiophen), dotiert mit Polystyrolsulfonat (PEDOT/PSS) wurden als Widerstandssensoren für die Detektion von Luftfeuchte ein-gesetzt. Die prinzipielle Ein-satzmöglichkeit unserer Technik im Bereich der organischen Elektronik konnten wir mit dem Bau organischer Feldeffekttransistoren nachweisen. Mit einem computergesteu-erten Plotter des Typs Rol-land DXY-1150A, Plot-Kapillaren für das Tuschezeichnen, handelsüblichen Folien für wasserlösliche Tinten als Substrat und kolloidalen Graphit als leitendes Material konnten wir Auflösungen, das heißt insbesondere Kanalbreiten bzw. Elektrodenabstände im Bereich von 20+10%B5m (auf 2cm Länge) her-stellen.</abstract>
    <parentTitle language="deu">Sensoren im Fokus neuer Anwendungen, 5. Dresdner Sensor-Symposium, 10. - 12. Dezember 2001, Dresden</parentTitle>
    <identifier type="isbn">3-935712-71-5</identifier>
    <enrichment key="UBICOIdent">001119</enrichment>
    <enrichment key="UBICOseries">Dresdner Beiträge zur Sensorik Band ; 16</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1977</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>119</pageFirst>
    <pageLast>223</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>w.e.b.-Univ.-Verl.</publisherName>
    <publisherPlace>Dresden</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-06-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Organische Feldeffekttransistoren als Transducer in der Biosensorik</title>
    <identifier type="isbn">3-935712-92-8</identifier>
    <enrichment key="UBICOIdent">002398</enrichment>
    <enrichment key="UBICOseries">Dresdner Beiträge zur Sensorik ; 20</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Werner</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Agnes</firstName>
      <lastName>Jahnke</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2620</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 056104</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>98</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2005-09-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A polymer high-k dielectric insulator for organic field effect Transistors</title>
    <parentTitle language="eng">Journal of Applied Physics</parentTitle>
    <identifier type="issn">0021-8979</identifier>
    <enrichment key="UBICOIdent">003147</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>2674</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>49</pageFirst>
    <pageLast>56</pageLast>
    <pageNumber/>
    <edition/>
    <issue>18</issue>
    <volume>9</volume>
    <type>articlenr</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2006-01-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere</title>
    <parentTitle language="deu">Forum der Forschung</parentTitle>
    <identifier type="issn">0947-6989</identifier>
    <enrichment key="UBICOIdent">003239</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>3586</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2007-05-31</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Organic thin film transistors with polymer high-k dielectric insulator</title>
    <enrichment key="UBICOIdent">004284</enrichment>
    <enrichment key="UBICOquelle">Materials Science and Engineering : C 26(2006)5-7, S. 1028 -1031, 0928-4931</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>high-k</value>
    </subject>
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  <doc>
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    <title language="eng">Organic field effect transistors with ferroelectric hysteresis</title>
    <enrichment key="UBICOIdent">004395</enrichment>
    <enrichment key="UBICOquelle">Thin Solid Films 515(2007)19, S. 7683 - 7687, 0040-6090</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
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      <firstName>...</firstName>
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      <firstName>Karsten</firstName>
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    <author>
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  </doc>
  <doc>
    <id>5028</id>
    <completedYear/>
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    <title language="eng">Spin coated organic ferroelectric films for non volatile memories</title>
    <enrichment key="UBICOIdent">005857</enrichment>
    <enrichment key="UBICOquelle">Physica Status Solidi : A 208(2011)2, S. 330-342, 1521-396X</enrichment>
    <author>
      <firstName>Klaus</firstName>
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    <submitter>
      <firstName>...</firstName>
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    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
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    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
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    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
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      <value>organic</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
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  <doc>
    <id>5031</id>
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    <completedDate>2011-02-11</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Band gab determination of P(VDF-TrFE) copolymer film by electron energy loss spectroscopy</title>
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    <enrichment key="UBICOquelle">Bulletin of Materials Science 33(2010)4, S. 457-461, 0973-7669</enrichment>
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      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
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      <firstName>...</firstName>
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    <author>
      <firstName>Karsten</firstName>
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    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
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    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5041</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
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    <language>eng</language>
    <pageFirst>012036</pageFirst>
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    <edition/>
    <issue>1</issue>
    <volume>8</volume>
    <type>articler</type>
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    <publishedDate>--</publishedDate>
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    <title language="eng">Buffer layer incestigaions on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene]</title>
    <parentTitle language="eng">IOP conference series : Materials Science and Engineering</parentTitle>
    <identifier type="issn">1757-899X</identifier>
    <enrichment key="UBICOIdent">005870</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
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    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
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    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MFIS capacitors</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
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    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>5058</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
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    <language>eng</language>
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    <completedDate>2011-02-11</completedDate>
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    <title language="eng">Interface Reactions in Ultrathin Functional Dielectric Films</title>
    <enrichment key="UBICOIdent">005897</enrichment>
    <enrichment key="UBICOquelle">Advanced Engineering Materials 11(2009)4, S. 269-274, 1527-2648</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <submitter>
      <firstName>...</firstName>
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    <author>
      <firstName>Karsten</firstName>
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    <author>
      <firstName>Klaus</firstName>
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    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ultrathin</value>
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    <subject>
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      <value>dielectric</value>
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  </doc>
  <doc>
    <id>5060</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
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    <language>eng</language>
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    <completedDate>2011-02-11</completedDate>
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    <title language="eng">Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS</title>
    <enrichment key="UBICOIdent">005899</enrichment>
    <enrichment key="UBICOquelle">Materials Science Poland 27(2009)1, S. 141-157</enrichment>
    <author>
      <firstName>Dieter</firstName>
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    <submitter>
      <firstName>...</firstName>
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    </submitter>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
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    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <author>
      <firstName>Klaus</firstName>
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    <author>
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    <author>
      <firstName>Dmytro</firstName>
      <lastName>Chumakov</lastName>
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    <author>
      <firstName>Ehrenfried</firstName>
      <lastName>Zschech</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxidic</value>
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    <subject>
      <language>eng</language>
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      <value>organic</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>materials</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron radiation</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XPS</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XAS</value>
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  </doc>
  <doc>
    <id>5065</id>
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    <publishedYear>2009</publishedYear>
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    <language>eng</language>
    <pageFirst>445</pageFirst>
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    <publisherName>Wiley-VCH</publisherName>
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    <completedDate>2011-02-11</completedDate>
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    <title language="eng">Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices</title>
    <parentTitle language="eng">Organic Electronics : structural and Electronic Properties of OFETs</parentTitle>
    <identifier type="isbn">978-3-527-40810-8</identifier>
    <enrichment key="UBICOIdent">005906</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
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    <submitter>
      <firstName>...</firstName>
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    <editor>
      <firstName>Christof</firstName>
      <lastName>Wöll</lastName>
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    <author>
      <firstName>Yevgen</firstName>
      <lastName>Burkov</lastName>
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    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
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    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
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    <author>
      <firstName>Andriy</firstName>
      <lastName>Goryachko</lastName>
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    <author>
      <firstName>Dieter</firstName>
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      <language>eng</language>
      <type>uncontrolled</type>
      <value>microscopic</value>
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    <subject>
      <language>eng</language>
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      <value>spectrocsopic</value>
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      <value>dielectric</value>
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  <doc>
    <id>5156</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
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    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
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    <completedDate>2011-02-15</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Ferroelectric properties of spin-coated ultrathin (down to 10nm) copolymer films</title>
    <enrichment key="UBICOIdent">005998</enrichment>
    <enrichment key="UBICOquelle">Applied Physics Letters 93(2008)11, 112901, 1077-3118</enrichment>
    <author>
      <firstName>Klaus</firstName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
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    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
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    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spin-coated</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copolymer</value>
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  <doc>
    <id>5174</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
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    <language>eng</language>
    <pageFirst>159</pageFirst>
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    <completedDate>2011-02-15</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Electrical investigations on MFIS structures consisting P[VDF/TrFE] as ferro-electric layer for non-volatile memory applications</title>
    <parentTitle language="eng">Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)</parentTitle>
    <enrichment key="UBICOIdent">006017</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
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    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
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    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>I.</firstName>
      <lastName>Lazareva</lastName>
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    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MFIS, P[VDF/TrFE]</value>
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    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ferroelectric</value>
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    <subject>
      <language>eng</language>
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      <value>non-volatile</value>
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  <doc>
    <id>6351</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
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    <language>eng</language>
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    <completedDate>2011-11-18</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications</title>
    <enrichment key="UBICOIdent">007318</enrichment>
    <enrichment key="UBICOquelle">Materials Science Poland 28(2010)1, S. 117-128, 0137-1339</enrichment>
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      <firstName>Karsten</firstName>
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      <firstName>...</firstName>
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    <author>
      <firstName>Bernd</firstName>
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    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
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    <author>
      <firstName>Klaus</firstName>
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    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
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  <doc>
    <id>6352</id>
    <completedYear/>
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    <completedDate>2011-11-18</completedDate>
    <publishedDate>--</publishedDate>
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    <title language="eng">Buffer layer investigations on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene]</title>
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    <enrichment key="UBICOquelle">IOP conference series: Materials Science and Engineering 8 (2010) 012036</enrichment>
    <author>
      <firstName>Karsten</firstName>
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    <author>
      <firstName>Bernd</firstName>
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      <firstName>Ioanna</firstName>
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    <author>
      <firstName>Klaus</firstName>
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    <author>
      <firstName>Dieter</firstName>
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    <id>9101</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
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    <language>eng</language>
    <pageFirst>209</pageFirst>
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    <pageNumber/>
    <edition/>
    <issue>261</issue>
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    <completedDate>2013-07-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The  effect  of  X-ray  photoelectron  spectroscopy  measurement  on  P(VDF-TrFE) copolymer  thin  films</title>
    <abstract language="eng">The  impact  of  prolonged  X-ray  irradiation  during  X-ray  photoelectron  spectroscopy  (XPS)  measurement was  investigated  on  poly(vinylidene-trifluoroethylene)  (P(VDF-TrFE))  thin  films.  It  was  observed  that&#13;
prolonged  X-ray  irradiation  can  accelerate  the  crosslinking  of  P(VDF-TrFE)  and  diminish  the  ferroelectric phase.  Fourier  transform  infrared  spectroscopy  (FT-IR)  data  indicate  that  the  ferroelectric  phase  diminishes  completely  after  360  kJ  of  X-ray  irradiation  dose  and  it  induces  the  paraelectric  phase.  In  this  work,&#13;
the  main  emphasis  was  given  to  the  optimization  of  the  X-ray  irradiation  dose  during  XPS measurements&#13;
to  maintain  the  ferroelectric  phase  within  the  copolymer  films.</abstract>
    <parentTitle language="eng">Applied  Surface  Science</parentTitle>
    <identifier type="doi">10.1016/j.apsusc.2012.07.144</identifier>
    <identifier type="issn">0169-4332</identifier>
    <identifier type="issn">1873-5584</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF-TrFE)  copolymer  thin  film</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XPS  measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray  irradiation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ferroelectric  to  paraelectric  phase transformation</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13786</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 216</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Buffer layer investigation of MFIS stacks with an organic ferroelectric layer</title>
    <abstract language="eng">Ferroelectric field effect transistors are considered as future non volatile and non destructive readout memory cells. Conventional Perowskite-type ferroelectric materials are shown to work but they need expensive high temperature and high partial pressure processing steps inducing also unintentional and undefined interfacial layers.A possible low cost solution is the use of poly[vinylidene fluoride trifluoroethylene (P[VDF/TrFE]). This is a ferroelectric polymer which can be spin coated at room temperature onto silicon suited with well defined buffer layers. Using P[VDF/TrFE] we focus on metal ferroelectric insulator semi-conductor (MFIS) structures. In MFIS structure a part of the programming voltage drops over the buffering insulator. We report on attempts to minimize this fraction by optimizing the voltage divider&#13;
over the buffer and the ferroelectric layers. CV measurements for different thickness of the buffer (10-235nm) and the ferroelectric layer(100nm-1μm) and for different permittivity values of the buffer layer(SiO2, Al2O3, HfO2) will be presented. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/11-1).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/df/session/11/contribution/1</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13787</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 797</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Study of reactions at the interface P(VDF/TrFE)/Al and P(VDF/TrFE)/PEDOT:PSS</title>
    <abstract language="eng">Due to potential use in non volatile memory application, Poly(vinylidene fluoride/trifluoroethylene) (P(VDF-TrFE)) is a great deal of interest, especially to produce organic field effect transistors (OFET). Right now it was found that Aluminum is one of the cost-effective inorganic electrode candidate. On the other hand, poly(3,4 ethylenedioxythiophene):poly(4-styrenesulfonate)(PEDOT:PSS) shows promising behavior for the application as organic electrode. In part of our investigations we have systematically studied surface interactions of organic ferroelectric thin films (P(VDF-TrFE))with inorganic (Al) and organic layers (PEDOT:PSS). By X-ray photoelectron spectroscopy (XPS) is has been found that there is a interfacial reaction with Al and the copolymer. In contrast, for electrodes, made of PEDOT: PSS, we found not such kind of behavior. In this case, we found no evidence for any surface reaction. Furthermore, we present our results concerning the orientation of permanent dipoles in the co-polymer (formed between hydrogen and fluorine atom). Here, we use Near-edge X-ray absorption fine structure (NEXAFS) analysis at the U 49/2 - PGM2 beam line of the BESSY-II Synchrotron. This work is supported by Deutsche Forschungsgemeinschaft (DFG) within priority program 1157 (DSCH 745/11-1).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/syoe/session/8/contribution/18</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Olaf</firstName>
      <lastName>Seifarth</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffman</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13794</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 828</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">C(V) and C(t) measurements on MFIS structures consisting P[VDF/TrFE] as ferroelectric layer</title>
    <abstract language="eng">Ferroelectric Field Effect Transistors (FeFETs) are considered as a candidate for future non volatile and non destructive readout memory cells. A possible low cost solution is the use of poly[vinylidene fluoride trifluoroethylene (P[VDF/TrFE]). Using P[VDF/TrFE] we focus on metal ferroelectric insulator semiconductor (MFIS) capacitor structures. In this contribution we will summarize our investigations related to capacitance measurements in dependence of applied bias (C(V)) and time (C(t)). The thickness of the ferroelectric layer as well as the thickness and the material of the buffer layer have been investigated for optimization of the write voltage. CV measurements at higher temperatures deliver decreased flatband voltage shifts within one CV loop resulting in lower memory windows. At temperatures around 100∘C the hysteresis totally vanished, pointing out the ferroelectric behavior of the system. C(t) measurements at a constant bias have been performed for retention analysis of the MFIS stack. After applying a writing pulse we could distinguish between a higher and a lower capacitance state for more than 5 days. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (SCHM 745/11-2).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/sysa/session/4/contribution/7</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Bernd</firstName>
      <lastName>Seime</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13797</id>
    <completedYear/>
    <publishedYear>2008</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 830</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface reactions of ferroelectric copolymer layers with different electrode materials</title>
    <abstract language="eng">The ferroelectric copolymer poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) is a possible material for low cost applications as organic nonvolatile memory element. We present an XPS interface investigation of the copolymer/electrode interface. Below 100nm film thickness, interface phenomena becomes important. Possible interface reactions could lead to a reduction of the ferroelectric functionality.We present a comparative study of the two interfaces Al/P(VDF-TrFE) and PEDOT:PSS/P(VDF-TrFE). The result is a clear indication of a surface reaction in between the Aluminum-electrodes. In contrast, for PEDOT:PSS the measurements shows a layer by layer formation of the interface PEDOT:PSS/PVDF without any reaction. Second, we present a study of remanent polarization of ultrathin spincoated films of the copolymer, in a thickness range from 5 to 100mn, with organic electrodes like PEDOT:PSS. The measurements are carried out by using the flatband shift of a capacitance-voltage (CV) characteristic. This shift of flatband voltage is used as value for the electric polarization of the polymer.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 43</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/sysa/session/5/contribution/16</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Dipankar</firstName>
      <lastName>Mandal</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13779</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 127</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Inorganic and organic layers for high-k and organic memory applications</title>
    <abstract language="eng">We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the&#13;
functional layer. Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin&#13;
coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts. For the inorganic stack our attempt is to combine higk-k dielectrics&#13;
with high band gap semiconductors (SiC). Praseodymium oxide layers are&#13;
prepared by electron beam evaporation from Pr6O11&#13;
powder and in situ&#13;
controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin ox-&#13;
ide on top of the semiconductor and following annealing steps or by a&#13;
wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectro-scopic characterisation we investigate the stability of the various inter-faces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/df/session/1/contribution/4</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13780</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 101</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-19</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">P(VDF/TrFE) as ferroelectric insulation layer for organic field effect transistors</title>
    <abstract language="eng">The ferroelectric polymer poly(vinylidene fluoride trifluoroethylene)(P(VDF-TrFE)) is used as insulating material for organic field effect tran-sistors (OFET) and metal-insulator-semiconductor (MIS)-structures. For the MIS-structures, we find the typical hysteresis in the CV charac-teristic upon increasing the voltage scan window. Based on these results, we fabricate OFET with regioregular poly(3-hexlythiophene)(P3HT) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers of spincoated P(VDF-TrFE) as gate&#13;
insulation (100nm). The drain-source current of the OFET is reversible affected by the polarized gate, which gives opportunities for organic&#13;
nonvolatile memory elements. We present characteristic features like the hysteretic drain current response or the data retention. Furthermore,&#13;
we present measurements with Kelvin probe force microscopy, a method which gives informations on the lateral distributions of the surface potential.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/cpp/session/23/contribution/28</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13815</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 671</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Temperature dependence of organic solar cell parameters</title>
    <abstract language="eng">The influence of an annealing step on the parameters of bulk heterojunction organic solar cells is investigated. In order to fabricate the solar cells we use glass coated with ITO (Indiumtinoxide) as a substrate on which the active layer consisting of P3HT and PCBM is spincoated. Al-electrodes are evaporated on top of the active layer. We use PEDOT:PSS as buffer layer. Each sample is annealed at different temperatures for a short time. Between every temperature step the I-V characteristic of the cell is measured. The following parameters are derived afterwards: FF, Isc (density), Voc. Also the efficiency is estimated. The results show a maximum cell efficiency for drying at 100°C for 20sec. A further important step for preparation is the drying procedure of the PEDOT:PSS layer. Here an improvement of about 50% in cell efficiency is measured after drying at 50°C for 5 days under inert gas atmosphere.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 44</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/syop/session/4/contribution/2</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Shine</firstName>
      <lastName>Philip</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>13837</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>S. 483</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-02-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigation of new Catalysts for PEM Fuel Cells</title>
    <abstract language="eng">Increasing green house emissions amplify global warming concerns worldwide. Fuel cells, based on polymer electrolyte membranes (PEM) are part of the solution to this issue. We aim at developing and testing new catalysts for fuel cells. Platinum catalysts perform best in PEM fuel cells to date but they are very expensive. For fuel cells to be perfectly applicable and economically affordable, an alternative catalyst with similar or even greater efficiency should be developed.&#13;
&#13;
Metal phthalocyanines are known to be good oxygen reduction catalysts and are associated with high electron transfer properties. We investigated Cobalt Phthalocyanine in its pure state mixed with Carbon Black (CoPc:Carbon Black=1:9) untreated and also after a treatment in N2 at several temperatures, up to 1000°C for 30 minutes.&#13;
&#13;
Results of XPS and EDX analyses reveal that the treatment at higher temperatures causes a rearrangement in the chemical states of Co, N and C atoms. Furthermore, results of cycling voltammetry (CV) analysis reveal that CoPc treated in N2 at 800°C exhibited a higher current density, in conclusion, a higher catalytic activity than the untreated CoPc.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46</parentTitle>
    <identifier type="issn">0420-0195</identifier>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/o/session/60/contribution/119</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Roy</firstName>
      <lastName>Mbua</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Ulricke</firstName>
      <lastName>Kramm</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17146</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Growth and Characterization of 3C-SiC thin films on Si substrates</title>
    <abstract language="eng">This work reports on the growth and characterization of cubic silicon carbide thin films. A cold wall low pressure chemical vapour deposition (LPCVD) system has been used to grow the cubic silicon carbide. The two step method, carbonization and subsequent growth, has been used to grow good quality 3C-SiC thin films. The composition and structure of deposited thin films have been analysed by Fourier Transform Infrared Spectroscopy (FTIR), XPS and X-Ray Diffractometry (XRD). The structural quality of the films has been optimized as a function of substrate temperature during carbonization and growth. X-rays diffraction measurements shows that the grown layers are highly oriented crystalline cubic silicon carbide.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/hl/session/58/contribution/50?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Rakesh</firstName>
      <lastName>Sohal</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low pressure chemical vapor deposition (LPCVD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3C-SiC</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier Transform Infrared Spectroscopy (FTIR)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray diffraction</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17151</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigations of 3C-SiC growth on Si (001)</title>
    <abstract language="eng">Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate).</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/hl/session/44/contribution/42?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 39</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mohamed</firstName>
      <lastName>Torche</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Grzegorz</firstName>
      <lastName>Lupina</lastName>
    </author>
    <author>
      <firstName>Andrey</firstName>
      <lastName>Goryako</lastName>
    </author>
    <author>
      <firstName>Jürgen</firstName>
      <lastName>Wollweber</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3C-SiC</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>chemical vapor deposition (CVD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17138</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">P(VDF/TrFE) as a ferroelectric dielectric for Organic Field effect Transistors in MFIS structure</title>
    <abstract language="eng">MFIS structures consisting of metal, ferroelectric poly[vinylidene fluoride trifluoroethylene](P[VDF/TrFE]), insulator, semiconductor (Si) are fabricated and the influence of the polarization of the P(VDF/TrFE) on the CV characteristics of these structures is investigated. We find a characteristic ferroelectric hysteresis in the CV curves upon increasing the voltage scan window (e.g.-U...U,U=6...30V, |UP(VDF/TrFE)|≤15V, dP(VDF/TrFE)=300 nm). A writing process with adequate electric fields causes large shifts in the flatband voltage ( Δ UFB&gt;4V for the quoted example before) which are stable over days. We report on our investigations which focus on the switching behavior by varying the parameters like polymer thickness, writing field strength and time, long time stability, reversing voltage and insulating material (SiO2, PMMA (Polymethylmetacrylate)). This material combination is favorable for transfer into our full organic concept of field effect transistors for application as a nondestructive readout memory (NDRO) cell.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/syoo/session/6/contribution/39?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF/TrFE)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Organic ferroelectric field effect transistor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>capacitance voltage measurements</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17140</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Organic Field Effect Transistors with polymer high-k dielectric insulator</title>
    <abstract language="eng">Organic field effect transistors consisting of the copolymer poly(vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and P3HT (poly(3-hexlythiophene)) as active layer have been fabricated. The influence of P(VDF-TrFE) on the transconductance of organic field effect transistors was investigated and enhanced gate effects are observed compared to similar transistors with PMMA (Polymethylmetacrylate) as gate dielectric. Due to the high dielectric constant of P(VDF-TrFE) (DK=12) an operation voltage smaller than for a conventional organic dielectric like PMMA (DK=3.3) was observed. The thickness of the spincoated dielectric layers is in the range of 2microns and in consequence, no significant hysteresis was found, a prerequisite for transistor operation.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/syoo/session/6/contribution/30?lan=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Ioanna</firstName>
      <lastName>Paloumpa</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>organic field effect transistor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>P(VDF/TrFE)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-k organic</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>20422</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>565</pageFirst>
    <pageLast>568</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>70</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-11-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Organische Feldeffekttransistoren als Transducer in der Biosensorik</title>
    <title language="eng">Organic Field Effect Transistors as Biosensors</title>
    <abstract language="deu">In diesem Beitrag wird der Einsatz neuartiger Sensortypen für die medizinische Diagnostik beschrieben. Diese Sensoren sollen komplett organisch sein und auf dem Prinzip des Feldeffekttransistors basieren. Als Modellsystem für die Anwendung in der Biosensorik soll die Einsatzmöglichkeit dieser Sensoren in der nicht-invasiven Diagnostik der Helicobacter-pylori-Infektion überprüft werden.</abstract>
    <abstract language="eng">In this contribution we describe the investigation of new types of sensors in medical diagnosis. These sensors are completely organic and are based on the principle of organic field effect transistors. As model system for application in medical diagnosis we test the usability of this sensors for the diagnosis of helicobacter pylori.</abstract>
    <parentTitle language="deu">Technisches Messen</parentTitle>
    <identifier type="doi">10.1524/teme.70.12.565.20261</identifier>
    <identifier type="issn">0171-8096</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Werner</firstName>
      <lastName>Bär</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Agnes</firstName>
      <lastName>Jahnke</lastName>
    </author>
    <author>
      <firstName>Carola</firstName>
      <lastName>Schwiertz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Feldeffekttransistor</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Biosensorik</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Helicobacter pylori</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field effect transistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>biosensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>helicobacter pylori</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>22356</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>547</pageFirst>
    <pageLast>572</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier, Woodhead Publishing</publisherName>
    <publisherPlace>Duxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-09-25</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Preparation, properties and electronic structure of SnO₂</title>
    <abstract language="eng">This chapter reports about tin oxide (SnO₂), a material which belongs to the transparent conducting oxide family and is best characterized by its high conductivity, high carrier mobility, and the ability to form p-type conductivity. We correlate these properties in terms of localized intrinsic electronic defect states which are resolved by resonant photoelectron spectroscopy measurements. We describe SnO₂ in terms of an inhomogeneous, mixed-ionic-covalent semiconductor in which these intrinsic electronic defects state are stabilized.</abstract>
    <parentTitle language="eng">Single Crystals of Electronic Materials</parentTitle>
    <identifier type="isbn">978-0-08-102096-8</identifier>
    <identifier type="isbn">978-0-08-102097-5</identifier>
    <enrichment key="UBICOseries">Woodhead Publishing Series in Electronic and Optical Materials</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Robert</firstName>
      <lastName>Fornari</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Haeberle</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Janowitz</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electronic structure</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>tin oxide (SnO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>intrinsic defect states</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>24598</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue>11</issue>
    <volume>7</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-11-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Al2O3-Atomic Layer Deposited Films on CH3NH3PbI3 : Intrinsic Defects and Passivation Mechanisms</title>
    <abstract language="eng">The initial interaction of atomic layer deposited films of Al2O3 at room temperature on CH3NH3PbI3 (MAPI) films is studied. Synchrotron radiation–based photoelectron spectroscopy is applied to analyze the initial changes in the Al-derived features by comparing samples with different Al2O3 film thicknesses.&#13;
It is found that polarons and excitons, both intrinsic defects of Al2O3, play a key role in the interface formation. The polaronic states uptake a charge from the MAPI substrate. This charge is transferred to and stabilized in the excitonic state of Al2O3 which is assigned to predominately tetrahedral coordinated Al sites. This charge transfer is initiated by vacancies present in the MAPI substrate and stabilizes a covalent bonding at the Al2O3–MAPI interface but also causes a roughening of the interface which may lead to the formation of grain boundaries.&#13;
On top of the rough interface, 2D Al2O3 clusters with an increasing number of octahedrally coordinated Al—O bonds grow, and with increasing Al2O3 coverage, they introduce self-healing of the structural defects.</abstract>
    <parentTitle language="eng">Energy Technology , The Journal of Physical Chemistry C</parentTitle>
    <identifier type="doi">10.1002/ente.201900975</identifier>
    <identifier type="issn">2194-4288</identifier>
    <identifier type="issn">2194-4296</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">1900975</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Lukas</firstName>
      <lastName>Kegelmann</lastName>
    </author>
    <author>
      <firstName>Steve</firstName>
      <lastName>Albrecht</lastName>
    </author>
    <author>
      <firstName>Nataliya</firstName>
      <lastName>Tsud</lastName>
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      <firstName>Peter</firstName>
      <lastName>Kús</lastName>
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    <author>
      <firstName>Iva</firstName>
      <lastName>Matolinová</lastName>
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      <value>charge donation and transfer cycles</value>
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      <value>covalent interfaces</value>
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      <type>uncontrolled</type>
      <value>defect monitoring</value>
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      <language>eng</language>
      <type>uncontrolled</type>
      <value>model of Al2O3–CH3NH3PbI3 interactions</value>
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      <language>eng</language>
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      <value>resonant photoelectron spectroscopy</value>
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    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
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  <doc>
    <id>32047</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>23077</pageFirst>
    <pageLast>23089</pageLast>
    <pageNumber/>
    <edition/>
    <issue>47</issue>
    <volume>127</volume>
    <type>articler</type>
    <publisherName/>
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    <contributingCorporation/>
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    <completedDate>2023-11-30</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photosensitive and Rectifying Properties of Ga2O3 Described by Polaronic Screened Electrons and Internal Potentials</title>
    <abstract language="eng">The photosensitive and rectifying properties of Ga2O3 are described by (n-type) intrinsic (π-) electrons. These polaronic screened multiatomic carriers populate the intrinsic defect states within the ionic gap; their spectroscopic evidence is based on resonant photoemission spectroscopy data that also provide the ionicity factor of Ga2O3 and the size of the ionic gap. The π-electron density depends on the internal potential and its photo- and field-induced dipole contributions, and it describes the observed combined ohmic-exponential carrier densities and current–voltage dependences. The π-electron dynamics is caused by pairing and dissociation dipoles in the bulk of Ga2O3. The material properties of the electrode contribute via external chemical potentials and define the criteria for ohmic and rectifying contacts. This quantitative and predictive concept not only convinces by perfect agreement with published experimental data but also points toward the achievable performance limits of UV absorbers and rectifying devices.</abstract>
    <parentTitle language="eng">Journal of Physical Chemistry C</parentTitle>
    <identifier type="issn">1932-7447</identifier>
    <identifier type="issn">1932-7455</identifier>
    <identifier type="doi">10.1021/acs.jpcc.3c05785</identifier>
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    <enrichment key="Fprofil">1 Energiewende und Dekarbonisierung / Energy Transition and Decarbonisation</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
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      <lastName>Henkel</lastName>
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    <author>
      <firstName>Klaus</firstName>
      <lastName>Müller</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>quantitative π-electron densities</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multi-atomic quasi-particles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photosensitivity and rectifier devices</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
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