<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1244</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>597</pageFirst>
    <pageLast>601</pageLast>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>13</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Nanoparticles as the Active Element of High-Temperature Metal-Insulator-Silicon Carbide Gas Sensors</title>
    <parentTitle language="eng">Advanced Materials</parentTitle>
    <identifier type="issn">1521-4095</identifier>
    <identifier type="issn">0935-9648</identifier>
    <enrichment key="UBICOIdent">001574</enrichment>
    <author>
      <firstName>O.</firstName>
      <lastName>Böhme</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <author>
      <firstName>Ingemar</firstName>
      <lastName>Lundström</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1252</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of HF and ozone treated SiC surfaces</title>
    <enrichment key="UBICOIdent">001582</enrichment>
    <enrichment key="UBICOquelle">Materials Science Forum, Vol. 353-356, 219-222 2001</enrichment>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>David R.</firstName>
      <lastName>Batchelor</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <author>
      <firstName>Ingemar</firstName>
      <lastName>Lundström</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>1253</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2003-08-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Oxide growth on SiC (0001) surfaces</title>
    <enrichment key="UBICOIdent">001583</enrichment>
    <enrichment key="UBICOquelle">Applied Surface Science Vol. 184, 342-347.</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Th.</firstName>
      <lastName>Seyller</lastName>
    </author>
    <author>
      <firstName>L.</firstName>
      <lastName>Ley</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6409</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Dipole moment of nanoparticles at interfaces</title>
    <enrichment key="UBICOIdent">007544</enrichment>
    <enrichment key="UBICOquelle">Chemical Physics Letters 313(1999)3-4, S. 411-415, 0009-2614</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>O.</firstName>
      <lastName>Böhme</lastName>
    </author>
    <author>
      <firstName>Alexandros D.</firstName>
      <lastName>Yfantis</lastName>
    </author>
    <author>
      <firstName>Thomas</firstName>
      <lastName>Heller</lastName>
    </author>
    <author>
      <firstName>David R.</firstName>
      <lastName>Batchelor</lastName>
    </author>
    <author>
      <firstName>Ingemar</firstName>
      <lastName>Lundström</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>6422</id>
    <completedYear/>
    <publishedYear>1997</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2011-11-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors</title>
    <enrichment key="UBICOIdent">007581</enrichment>
    <enrichment key="UBICOquelle">Thin Solid Films 299(1997)1-2, S. 183-189, 0040-6090</enrichment>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <submitter>
      <firstName>...</firstName>
      <lastName>Administrator</lastName>
    </submitter>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>A.</firstName>
      <lastName>Baranzahi</lastName>
    </author>
    <author>
      <firstName>B.</firstName>
      <lastName>Wälivaare</lastName>
    </author>
    <author>
      <firstName>W.</firstName>
      <lastName>Göpel</lastName>
    </author>
    <author>
      <firstName>Ingemar</firstName>
      <lastName>Lundström</lastName>
    </author>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17159</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Depth profiling using synchrotron radiation with high energetic resolution as demonstrated for Si-, SiC-, SiGe-, and SiGeC-samples</title>
    <abstract language="eng">Photoelectron spectroscopy utilizing synchrotron radiation of high energetic resolution (more than E/ΔE=3000) was used to record the Si2p emission signal of Si, SiC, SiGe, and SiGeC samples. The spectra exhibit signals of the elemental silicon as well as of fully oxidised silicon. Upon variing the photon energy, and therefore the escape depth of the photoelectrons, we find an oxidic silicon signal which is only half oxidized. This half oxidized silicon is located to be at the interface of the bulk material with the oxide. We determine the thickness of the surface oxide from the total ratio of oxidic and elemental silicon. We find differences between the interface and bulk oxides regarding their elemental composition. The line width of the elemental Si2p-signal exhibits a broadening of approximately 200meV while variing the photoelectron escape depth. This behaviour is interpreted as caused by surface stress.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/2001/conference/hamburg/part/o/session/13/contribution/74?lang=de</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 36</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Ricardo Pablo</firstName>
      <lastName>Mikalo</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <author>
      <firstName>Ingemar</firstName>
      <lastName>Lundström</lastName>
    </author>
    <author>
      <firstName>Herbert</firstName>
      <lastName>Wawra</lastName>
    </author>
    <author>
      <firstName>Klaus</firstName>
      <lastName>Pressel</lastName>
    </author>
    <author>
      <firstName>Abbas</firstName>
      <lastName>Ourmazd</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray photoelectron spectroscopy (XPS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>synchrotron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>depth profiling</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>17168</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft</publisherName>
    <publisherPlace>Bad Honnef</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-09-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Einfluß von Nanopartikeln auf die Funktion von Hochtemperatursensoren</title>
    <abstract language="deu">Es werden Untersuchungen an als Hochtemperatur-Sensoren arbeitenden Schottky-Dioden mit dem Aufbau Metall-Oxidschicht-Siliziumkarbid vorgestellt. Dazu wurden Tiefenprofile mit XPS durch abwechselndes Abtragen durch Sputtern und Messen erstellt. Die Messungen erfolgten an thermisch unterschiedlich vorbehandelten Proben. Dabei konnten dipol-bedingte Verschiebungen der Bindungsenergie von Rumpfniveaus beobachtet werden. Das dazu notwendige Dipol-Moment wird durch das Entstehen von mit einer Oxidschicht überzogenen Nanoteilchen erklärt. Die unterschiedlich ausgeprägten Dipol-Verschiebungen auf den einzelnen Proben erlaubten eine Erklärung der thermischen Vorbehandlung, die bei Weglassen zu „frischen“ und je nach Temperatur zu „aktivierten“ oder „toten“ Sensoren führte.</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft</parentTitle>
    <identifier type="url">http://www.dpg-verhandlungen.de/year/1999/conference/muenster/part/o/session/16/contribution/1?lang=en</identifier>
    <enrichment key="UBICOseries">Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 34</enrichment>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Patrick</firstName>
      <lastName>Hoffmann</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Oliver</firstName>
      <lastName>Böhme</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <author>
      <firstName>Anita</firstName>
      <lastName>Lloyd Spetz</lastName>
    </author>
    <author>
      <firstName>Per</firstName>
      <lastName>Mårtenson</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hochtemperatursensoren</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Röntgen-Photoelektronenspektroskopie (XPS)</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Tiefenprofilierung</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
