<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>29410</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>134</pageFirst>
    <pageLast>142</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>14</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2022-10-20</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT</title>
    <parentTitle language="eng">International Journal of Microwave and Wireless Technologie</parentTitle>
    <identifier type="doi">10.1017/S1759078721001483</identifier>
    <identifier type="issn">1759-0795</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Petros</firstName>
      <lastName>Beleniotis</lastName>
    </author>
    <submitter>
      <firstName>Alke</firstName>
      <lastName>Hanisch</lastName>
    </submitter>
    <author>
      <firstName>Frank</firstName>
      <lastName>Schnieder</lastName>
    </author>
    <author>
      <firstName>Sascha</firstName>
      <lastName>Krause</lastName>
    </author>
    <author>
      <firstName>Sanaul</firstName>
      <lastName>Haque</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Rudolph</lastName>
    </author>
    <collection role="institutes" number="1121">Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik</collection>
  </doc>
</export-example>
