<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>21889</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>18</pageFirst>
    <pageLast>26</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>Oxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-05-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An (In Situ)² Approach: ALD and resPES Applied to Al₂O₃, HfO₂, and TiO₂ Ultrathin Films</title>
    <abstract language="eng">Oxide surface coatings are of importance in tailoring interface properties with respect to surface passivation, adjustment of surface potentials, or providing active centers for surface reactions. In this contribution, we report about surface coatings prepared by the atomic layer deposition (ALD) method. ALD is known for its conformal growth of ultrathin, dense films which exhibit a low concentration of pinholes.</abstract>
    <parentTitle language="eng">Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, Vol. 3.1</parentTitle>
    <identifier type="isbn">978-0-12-809739-7</identifier>
    <identifier type="isbn">978-0-12-809894-3</identifier>
    <identifier type="doi">10.1016/B978-0-12-409547-2.13852-1</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <editor>
      <firstName>Klaus</firstName>
      <lastName>Wandelt</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Matthias</firstName>
      <lastName>Richter</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Band scheme</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Partial density of states (pDOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic charges</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminum oxide (Al₂O₃)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hafnium oxide (HfO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium oxide(TiO₂)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
  <doc>
    <id>21890</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>162</pageFirst>
    <pageLast>171</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>Oxford</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2018-05-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interface Potentials, Intrinsic Defects, and Passivation Mechanisms in Al₂O₃, HfO₂, and TiO₂ Ultrathin Films</title>
    <abstract language="eng">We study the electronic structure of ultrathin Al₂O₃, HfO₂, and TiO₂ ALD films by resonant photoelectron spectroscopy. We identify intrinsic defects which are responsible for the active sites in interface reactions, for the incorporation of intrinsic charges, and for the formation of local dipole momenta. All of these features determine the surface potentials and the reactivity of the surface of the atomic layer deposition coated systems. We give examples of charges and dipoles in Al₂O₃, on a study of the surface potentials in HfO₂, and relate the intrinsic defects in TiO₂ to their electrochemical relevance.</abstract>
    <parentTitle language="eng">Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, vol. 3.1</parentTitle>
    <identifier type="isbn">978-0-12-809739-7</identifier>
    <identifier type="isbn">978-0-12-814984-3</identifier>
    <identifier type="doi">10.1016/B978-0-12-409547-2.14119-8</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <editor>
      <firstName>Klaus</firstName>
      <lastName>Wandelt</lastName>
    </editor>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Małgorzata</firstName>
      <lastName>Kot</lastName>
    </author>
    <author>
      <firstName>Silma Alberton</firstName>
      <lastName>Corrêa</lastName>
    </author>
    <author>
      <firstName>Chittaranjan</firstName>
      <lastName>Das</lastName>
    </author>
    <author>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Atomic layer deposition (ALD)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resonant photoelectron spectroscopy (resPES)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Band scheme</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Interface potential</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic charges</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Intrinsic defects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Partial density of states (pDOS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Exciton</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Polaron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ligand-to-metal charge transfer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Aluminium oxide (Al₂O₃)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hafnium oxide (HfO₂)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Titanium Oxide (TiO₂)</value>
    </subject>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
