<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>14054</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>187</pageFirst>
    <pageLast>189</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>26</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, FZ Jülich</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">GeSn Heterojunction LEDs on Si Substrates</title>
    <parentTitle language="eng">IEEE Photonics Technology Letters</parentTitle>
    <identifier type="doi">10.1109/LPT.2013.2291571</identifier>
    <identifier type="issn">1041-1135</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Gregor</firstName>
      <lastName>Mussler</lastName>
    </author>
    <author>
      <firstName>Kaiheng</firstName>
      <lastName>Ye</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Marc</firstName>
      <lastName>Schmid</lastName>
    </author>
    <author>
      <firstName>Mathias</firstName>
      <lastName>Kaschel</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Dan</firstName>
      <lastName>Buca</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14055</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4711</pageFirst>
    <pageLast>4714</pageLast>
    <pageNumber/>
    <edition/>
    <issue>16</issue>
    <volume>39</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2015-04-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates</title>
    <parentTitle language="eng">Optics Letters</parentTitle>
    <identifier type="doi">10.1364/OL.39.004711</identifier>
    <identifier type="issn">1539-4794</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Widmann</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Peter</firstName>
      <lastName>Zaumseil</lastName>
    </author>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Bechler</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14962</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>articlenr</type>
    <publisherName>International Society for Optics and Photonics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers</title>
    <parentTitle language="eng">Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States</parentTitle>
    <identifier type="doi">10.1117/12.2080816</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="UBICOseries">Proceedings of SPIE ; 9367</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14963</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3209</pageFirst>
    <pageLast>3212</pageLast>
    <pageNumber/>
    <edition/>
    <issue>13</issue>
    <volume>40</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart, HU Berlin, Max-Born-Institut Berlin</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electroluminescence of GeSn/Ge MQW LEDs on Si substrate</title>
    <parentTitle language="eng">Optics Letters</parentTitle>
    <identifier type="doi">10.1364/OL40.003209</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Widmann</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Bechler</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Torsten</firstName>
      <lastName>Wendav</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>14983</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>361</pageFirst>
    <pageLast>367</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>242</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>IHP, Universität Stuttgart</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2016-03-07</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.242.361</identifier>
    <identifier type="issn">1012-0394</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Bernhard</firstName>
      <lastName>Schwartz</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Philipp</firstName>
      <lastName>Saring</lastName>
    </author>
    <author>
      <firstName>Tzanimir V.</firstName>
      <lastName>Arguirov</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Erich</firstName>
      <lastName>Kasper</lastName>
    </author>
    <author>
      <firstName>J.</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <collection role="old_institute" number="01042">LS Schaltkreisentwurf</collection>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
  <doc>
    <id>18054</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>353</pageFirst>
    <pageLast>360</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>242</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>Universität Stuttgart</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2017-01-24</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ge and GeSn Light Emitters on Si</title>
    <parentTitle language="eng">Solid State Phenomena</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/SSP.242.353</identifier>
    <identifier type="issn">1012-0394</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <submitter>
      <firstName>Kerstin</firstName>
      <lastName>Röhl</lastName>
    </submitter>
    <author>
      <firstName>Martin</firstName>
      <lastName>Gollhofer</lastName>
    </author>
    <author>
      <firstName>Konrad</firstName>
      <lastName>Kostecki</lastName>
    </author>
    <author>
      <firstName>Roman</firstName>
      <lastName>Körner</lastName>
    </author>
    <author>
      <firstName>Stefan</firstName>
      <lastName>Bechler</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Widmann</lastName>
    </author>
    <author>
      <firstName>Tzanimir</firstName>
      <lastName>Aguirov</lastName>
    </author>
    <author>
      <firstName>Martin</firstName>
      <lastName>Kittler</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1581">FG Schaltkreisentwurf</collection>
  </doc>
</export-example>
