<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>9128</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>N23</pageFirst>
    <pageLast>N27</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>2</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2013-07-10</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium</title>
    <abstract language="eng">The atomic layer deposition of titanium oxide TiO2 on ruthenium and oxidized ruthenium with titanium methoxide as metal precursor&#13;
and H2O and O3 as oxidant was investigated by Rutherford backscattering (RBS) and time of flight secondary ion mass spectrometry (TOFSIMS). An ultra-thin layer of TiO2 deposited a priori with H2O plays the role of protection of Ru(Ox) substrates against etching by O3. Information about thin films (∼3 nm) interfacial reactions, thickness and structure was brought by Medium Energy Ion&#13;
Scattering Spectroscopy (MEIS) and X-ray absorption spectroscopy (XAS) measurements. The growth enhancements observed in&#13;
the first stages of the deposition depends on the pre-treatment (pre-oxidation, H2O based interlayer thickness) of the Ru substrate.&#13;
Thick films (∼14 nm) were analyzed by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as deposited TiO2 films are crystalline with rutile structure, as resulted from structural analyzes. However, the presence of small amounts of anatase was detected by soft X-ray absorption spectroscopy (XAS) and is strongly influenced by the surface pre-treatment of the Ru substrate. The electrical properties (equivalent oxide thickness and leakage current density) correlate with a different rutile/anatase&#13;
ratio present in the films.</abstract>
    <parentTitle language="eng">ECS Journal of Solid State Science and Technology</parentTitle>
    <identifier type="doi">10.1149/2.035301jss</identifier>
    <identifier type="issn">2162-8769</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <author>
      <firstName>Mihaela</firstName>
      <lastName>Popovici</lastName>
    </author>
    <submitter>
      <firstName>Karsten</firstName>
      <lastName>Henkel</lastName>
    </submitter>
    <author>
      <firstName>Annelies</firstName>
      <lastName>Delabie</lastName>
    </author>
    <author>
      <firstName>Christoph</firstName>
      <lastName>Adelmann</lastName>
    </author>
    <author>
      <firstName>Johan</firstName>
      <lastName>Meersschaut</lastName>
    </author>
    <author>
      <firstName>Alexis</firstName>
      <lastName>Franquet</lastName>
    </author>
    <author>
      <firstName>Massimo</firstName>
      <lastName>Tallarida</lastName>
    </author>
    <author>
      <firstName>Jaap van den</firstName>
      <lastName>Berg</lastName>
    </author>
    <author>
      <firstName>Olivier</firstName>
      <lastName>Richard</lastName>
    </author>
    <author>
      <firstName>Johan</firstName>
      <lastName>Swerts</lastName>
    </author>
    <author>
      <firstName>Kazuyuki</firstName>
      <lastName>Tomida</lastName>
    </author>
    <author>
      <firstName>Min-Soo</firstName>
      <lastName>Kim</lastName>
    </author>
    <author>
      <firstName>Hilde</firstName>
      <lastName>Tielens</lastName>
    </author>
    <author>
      <firstName>Hugo</firstName>
      <lastName>Bender</lastName>
    </author>
    <author>
      <firstName>Thierry</firstName>
      <lastName>Conard</lastName>
    </author>
    <author>
      <firstName>Malgorzata</firstName>
      <lastName>Jurczak</lastName>
    </author>
    <author>
      <firstName>Sven van</firstName>
      <lastName>Elshocht</lastName>
    </author>
    <author>
      <firstName>Dieter</firstName>
      <lastName>Schmeißer</lastName>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TiO2</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>atomic layer deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>rutile</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RuOx</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Rutherford backscattering (RBS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>time of flight secondary ion mass spectrometry (TOFSIMS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Medium Energy Ion Scattering Spectroscopy (MEIS)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-Ray absorption spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transmission electron microscopy (TEM)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction (XRD)</value>
    </subject>
    <collection role="old_institute" number="01005">LS Angewandte Physik / Sensorik</collection>
    <collection role="institutes" number="1503">FG Angewandte Physik und Halbleiterspektroskopie</collection>
  </doc>
</export-example>
