<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>25042</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>37</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-01-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy</title>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/1.5122777</identifier>
    <identifier type="issn">2166-2754</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">061213</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Elena</firstName>
      <lastName>Martin</lastName>
    </author>
    <author>
      <firstName>Michel</firstName>
      <lastName>Stchakovsky</lastName>
    </author>
    <author>
      <firstName>Alessandro</firstName>
      <lastName>Benedetti</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Stefano</firstName>
      <lastName>Chiussi</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>25044</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>41</pageFirst>
    <pageLast>44</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>93</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-01-14</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Plasmonics-Integrated Ge PIN-Photodetectors</title>
    <parentTitle language="eng">ECS Transactions</parentTitle>
    <identifier type="doi">10.1149/09301.0041ecst</identifier>
    <identifier type="issn">1938-5862</identifier>
    <identifier type="issn">1938-6737</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Lion</firstName>
      <lastName>Augel</lastName>
    </author>
    <author>
      <firstName>Fritz</firstName>
      <lastName>Berkmann</lastName>
    </author>
    <author>
      <firstName>Yuma</firstName>
      <lastName>Kawaguchi</lastName>
    </author>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27292</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-04-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content</title>
    <parentTitle language="eng">Journal of Raman Spectroscopy</parentTitle>
    <identifier type="doi">10.1002/jrs.6098</identifier>
    <identifier type="issn">1097-4555</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Henriette</firstName>
      <lastName>Tetzner</lastName>
    </author>
    <author>
      <firstName>Davide</firstName>
      <lastName>Spirito</lastName>
    </author>
    <author>
      <firstName>Constanza Lucia</firstName>
      <lastName>Manganelli</lastName>
    </author>
    <author>
      <firstName>Giovanni</firstName>
      <lastName>Capellini</lastName>
    </author>
    <author>
      <firstName>Michael R. S.</firstName>
      <lastName>Huang</lastName>
    </author>
    <author>
      <firstName>Christoph T.</firstName>
      <lastName>Koch</lastName>
    </author>
    <author>
      <firstName>Caterina J.</firstName>
      <lastName>Clausen</lastName>
    </author>
    <author>
      <firstName>Ahmed</firstName>
      <lastName>Elsayed</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27293</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue>11</issue>
    <volume/>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-04-13</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes</title>
    <abstract language="deu">Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="doi">10.1038/s41598-021-85012-z</identifier>
    <identifier type="issn">2045-2322</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="Artikelnummer">5723</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Lion</firstName>
      <lastName>Augel</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Sergej</firstName>
      <lastName>Bullert</lastName>
    </author>
    <author>
      <firstName>Sebastian</firstName>
      <lastName>Bürzele</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
  <doc>
    <id>27918</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>44</issue>
    <volume>54</volume>
    <type>articler</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-11-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Plasmonic gratings from highly doped Ge1−ySny films on Si</title>
    <parentTitle language="eng">Journal of Physics D: Applied Physics</parentTitle>
    <identifier type="issn">1361-6463</identifier>
    <enrichment key="BTU">an der BTU erstellt / created at BTU</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="Artikelnummer">445109</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <enrichment key="Fprofil">4 Künstliche Intelligenz und Sensorik / Artificial Intelligence and Sensor Technology</enrichment>
    <author>
      <firstName>Fritz</firstName>
      <lastName>Bergmann</lastName>
    </author>
    <submitter>
      <firstName>Marion</firstName>
      <lastName>Tülling</lastName>
    </submitter>
    <author>
      <firstName>Markus</firstName>
      <lastName>Ayasse</lastName>
    </author>
    <author>
      <firstName>Jon</firstName>
      <lastName>Schlipf</lastName>
    </author>
    <author>
      <firstName>Florian</firstName>
      <lastName>Mörz</lastName>
    </author>
    <author>
      <firstName>David</firstName>
      <lastName>Weißhaupt</lastName>
    </author>
    <author>
      <firstName>Michael</firstName>
      <lastName>Oehme</lastName>
    </author>
    <author>
      <firstName>Slawomir</firstName>
      <lastName>Prucnal</lastName>
    </author>
    <author>
      <firstName>Yuma</firstName>
      <lastName>Kawaguchi</lastName>
    </author>
    <author>
      <firstName>Daniel</firstName>
      <lastName>Schwarz</lastName>
    </author>
    <author>
      <firstName>Inga Anita</firstName>
      <lastName>Fischer</lastName>
    </author>
    <author>
      <firstName>Jörg</firstName>
      <lastName>Schulze</lastName>
    </author>
    <collection role="institutes" number="1504">FG Experimentalphysik und funktionale Materialien</collection>
  </doc>
</export-example>
